Sub 0.2 /spl mu/m lithography on 300 mm wafer

D. Ganz, A. Charles, S. Hornig, G. Hraschan, Wolfram Koestler, J. Maltabes, T. Schedel, S. Schmidt, K. Mautz, R. Schuster
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Abstract

We study the performance of the current 300mm lithography tool set for sub 0.2 /spl mu/m processes. The results are discussed in terms of process capability and stability. It was determined that the non-linear errors which are much higher on 300 mm wafers than on 200 mm wafers had an influence, and this is discussed in detail. We determine the root causes for the stronger appearance of these effects and propose solutions to improve the overlay performance.
在300mm晶圆片上的光刻速度低于0.2 /spl μ m
我们研究了当前300mm光刻工具组的性能,用于低于0.2 /spl μ m的工艺。从工艺性能和稳定性两个方面对结果进行了讨论。确定了300 mm晶圆上的非线性误差比200 mm晶圆上的大得多,并对其影响进行了详细的讨论。我们确定了这些效果更强的根本原因,并提出了改善覆盖层性能的解决方案。
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