Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)最新文献_第7页

Evaluation of particles on a Si wafer before and after cleaning using a new laser particle counter 用新型激光粒子计数器对清洁前后硅晶片上的粒子进行评价

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993677

S. Sasaki, H. An, Y. Mori, T. Kataoka, K. Endo, H. Inoue, K. Yamauchi, S. Mizuhara

{"title":"Evaluation of particles on a Si wafer before and after cleaning using a new laser particle counter","authors":"S. Sasaki, H. An, Y. Mori, T. Kataoka, K. Endo, H. Inoue, K. Yamauchi, S. Mizuhara","doi":"10.1109/ISSM.2000.993677","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993677","url":null,"abstract":"A new method has been developed to measure particle sizes of nanometer (nm) order on raw Si wafers by using a light-scattering method. Heretofore, we proposed a new measuring method that can theoretically detect a particle diameter of about 6 nm for particles on a raw Si wafer. A new apparatus measuring particle sizes was constructed according to the developed method. Then, it was verified that this measuring system could measure the particle size with a detection sensitivity of about 24nm. Particle detection on the surface of raw Si wafers was carried out with this measuring system; therefore it could detect a signal corresponding to a particle diameter of about 24/spl sim/34 nm. Moreover washing of the Si wafer by the wet cleaning method was attempted to verify the measured signal as a particle. Consequently, it was verified that detected particles on the raw Si wafer are almost particles adhering on the Si wafer. Then it could be verified that the wet cleaning method is an effective method to remove particles of less than 0.1 /spl mu/m diameter on a Si wafer surface.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124157171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Block cross processing: an innovative approach to constraint management 块交叉处理:约束管理的一种创新方法

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993654

S. DeBoo

{"title":"Block cross processing: an innovative approach to constraint management","authors":"S. DeBoo","doi":"10.1109/ISSM.2000.993654","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993654","url":null,"abstract":"Block cross processing (BXP) is an innovative system developed to provide manufacturing operations with a means for managing constrained areas of a process line using intra-site or inter-site material movement. This system is a proactive process that improves flexibility and increases capacity. The BXP system can be applied to any factories running a common process; it segments the fab process into several \"blocks\" that are identified as \"technically safe\" with respect to queue times, integrated yield issues, equipment and/or recipe matching, and capacity concerns. Blocks are a group of operation steps that range in size from 1 to about 10 operation steps depending on the technology and capacity issues within the block. Lots exercising BXP are processed through an entire block on a single manufacturing floor. BXP significantly reduced the amount of transferring between the two New Mexico 6\" fab floors. In addition BXP data was used as a diagnostic tool for improving yield by identifying and closing unmatched \"gaps\" between different factories at a block level. This paper depicts the process used to develop and qualify BXP. It records key learning within the process and notes suggestions for possible improvements.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125444840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

In-situ gas cleaning technology of hot-wall batch-type reactor for (Ba,Sr)TiO/sub 3/ 热壁间歇式反应器(Ba,Sr)TiO/sub 3/的原位气体净化技术

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993629

H. Yamamoto, P. Spaull, K. Nishimura, K. Hasebe, T. Asano, K. Nakao, M. Kiyotoshi, K. Eguchi, T. Arikado, K. Okumura

引用次数: 0

Energy saving in semiconductor fabs by out-air handling unit performance improvement 改进外风处理装置在半导体晶圆厂的节能效果

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993671

H. Suzuki, H. Hanaoka, Y. Ohkubo, Y. Yamazaki, Y. Shirai, T. Ohmi

引用次数: 10

The short-loop process tuning & yield evaluation by using the addressable failure site test structures (AFS-TS) 基于可寻址故障现场试验结构(AFS-TS)的短回路工艺调整与良率评估

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993647

K. Yih-Yuh Doong, S. Hsieh, Sheng-che Lin, Binson Shen, C. Hsu

引用次数: 6

An effective SPC approach to monitoring semiconductor manufacturing processes with multiple variation sources 一个有效的SPC方法来监控半导体制造过程与多个变化源

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993710

A. Chen, R. Guo, P.-J. Yeh

引用次数: 5

Environmental management activities by NEC electron devices NEC电子设备的环境管理活动

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993633

T. Nozaki

引用次数: 0

Evolution and demands of SoC in ITS and mobile communication systems SoC在ITS和移动通信系统中的发展与需求

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993605

R. Kohno

引用次数: 0

High reliability interconnect technology with tungsten-barrier metal in next generation 新一代钨障金属高可靠性互连技术

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993640

R. Shohji

引用次数: 4

Run-to-run process control of oxide CMP using integrated metrology 用集成计量法控制氧化物CMP的运行过程

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993700

S.S.P. Rao, J. Stefani, S. Comstock, J. Larsen, B. Paquette, M. Wang

引用次数: 5