基于可寻址故障现场试验结构(AFS-TS)的短回路工艺调整与良率评估

K. Yih-Yuh Doong, S. Hsieh, Sheng-che Lin, Binson Shen, C. Hsu
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引用次数: 6

摘要

本文介绍了一种新型测试结构的实现,称为可寻址故障点测试结构(AFS-TS),用于通孔工艺优化,包括衬垫层和W-CVD填充过程。它体现了可寻址故障现场试验结构的设计、缺陷检测和良率分析。基于互连测试结构在2000/spl次/2200 /spl亩/m/sup 2/内的高空间缺陷检测分辨率,采用新型测试结构对良率损失问题进行判别。采用0.25 /spl mu/m线制程逻辑后端,实现了一个4.0/spl次/6.6 mm/sup / /、包含9种测试结构的测试芯片。采用这种简单有效的工艺步骤杀手缺陷识别方法作为良率提高策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The short-loop process tuning & yield evaluation by using the addressable failure site test structures (AFS-TS)
This work describes the implementation of a novel test structure called addressable failure site test structure (AFS-TS) for via process optimization including the liner layer and W-CVD filling process. It manifests the design, defect detection and yield analysis of addressable failure site test structures. The novel test structures are used to discriminate the yield loss issues based on the high spatial defect detection resolution within 2000/spl times/2200 /spl mu/m/sup 2/ of interconnect test structures. A test chip of 4.0/spl times/6.6 mm/sup 2/ containing nine types of test structures was implemented using 0.25 /spl mu/m logic backend of line process. This simple and efficient killer defect identification of process steps is employed as yield enhancement strategy.
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