热壁间歇式反应器(Ba,Sr)TiO/sub 3/的原位气体净化技术

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993629

H. Yamamoto, P. Spaull, K. Nishimura, K. Hasebe, T. Asano, K. Nakao, M. Kiyotoshi, K. Eguchi, T. Arikado, K. Okumura

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引用次数: 0

摘要

提出了一种新的Ba/sub x/Sr/sub (1-x)/TiO/sub 2/ (BST)残余涂层气体净化技术。它由两步连续过程组成。在第一步中，我们使用Cl/sub / 2/气体在800℃去除Ba和Sr，它们的蒸气压较低。第二步是在相对较低的温度下使用ClF/sub - 3/ gas去除Ti。Ba和Sr的氯化合物的蒸气压比它们现有的其他化合物的蒸气压要高得多，因此通过氯化作用，Ba和Sr易挥发，容易被腐蚀掉。

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In-situ gas cleaning technology of hot-wall batch-type reactor for (Ba,Sr)TiO/sub 3/

We present a novel approach to gas cleaning technology for Ba/sub x/Sr/sub (1-x)/TiO/sub 2/ (BST) residual coating in hot wall CVD reactors. It consists of two step continuous process. In the first step we use Cl/sub 2/ gas at 800 deg. C to remove Ba and Sr which have low vapor pressure. Second step consists of using ClF/sub 3/ gas to remove Ti at relatively low temperature. Vapor pressures of the chlorine compounds of Ba and Sr are considerably higher than those of their other existing compounds, thus by chlorination, Ba and Sr turn volatile and are easily etched off.

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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