用于高k (Ba,Sr)TiO/sub /电容器的热壁批量CVD工具

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993628

M. Kiyotoshi, S. Yamazaki, J. Nakahira, K. Eguchi, K. Hieda, H. Yamamoto, T. Umehara, K. Hasebe, T. Asano, K. Nakao, T. Arikado, K. Okumura

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引用次数: 1

摘要

为了均匀沉积BST，研制了一种热壁间歇式BST- cvd工具，该工具采用快速热加工(FTP)炉和单独汽化液源供应系统(ILSS)。我们还采用了原位多步骤(IMS)工艺，即在同一反应器中连续重复薄无定形BST沉积及其结晶，以协调保形BST沉积和良好的电气性能。通过我们的热壁CVD沉积的BST显示出轻微的衬底依赖性(金属涂层与否)，因此热壁CVD优于单片工具，以减少测试晶圆的运行。IMS沉积的BST在SRO和Ru电极上都显示出几乎100%的台阶覆盖率，碳杂质浓度低于单步沉积的BST，并且具有足够的电特性(漏电流<10/sup -7/ A/cm/sup 2/， Teq<0.5 nm)。

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Hot-wall batch-type CVD tool for high-k (Ba,Sr)TiO/sub 3/ capacitors

A hot-wall batch type BST-CVD tool with fast thermal processing (FTP) furnace and individual vaporizing liquid source supply system (ILSS) was developed for uniform deposition of BST. We also employed an in-situ multi-step (IMS) process that is sequential repetition of thin amorphous BST deposition and its crystallization in the same reactor to reconcile conformal BST deposition and good electrical performances. BST deposited by our hot-wall CVD shows slight substrate dependence (metal coated or not), therefore hotwall CVD is superior to a single slice tool for reduction of test wafer running. IMS deposited BST shows almost 100% step coverage, lower carbon impurity concentration than single step deposited BST and sufficient electrical characteristics (leakage current <10/sup -7/ A/cm/sup 2/, Teq<0.5 nm) for both SRO and Ru electrodes.

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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