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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)最新文献

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Suppression of tungsten irregular growth in W chemical vapor deposition 化学气相沉积中钨不规则生长的抑制
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993641
T. Morita, Y. Harada, F. Oki, H. Onoda
{"title":"Suppression of tungsten irregular growth in W chemical vapor deposition","authors":"T. Morita, Y. Harada, F. Oki, H. Onoda","doi":"10.1109/ISSM.2000.993641","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993641","url":null,"abstract":"W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132190770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New identification system for individual wafer management 新的独立晶圆管理识别系统
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993611
E. Suzuki, H. Matsuda, Teiichirou Chiba, A. Mori
{"title":"New identification system for individual wafer management","authors":"E. Suzuki, H. Matsuda, Teiichirou Chiba, A. Mori","doi":"10.1109/ISSM.2000.993611","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993611","url":null,"abstract":"A conventional identification (ID) has many illegible parts; ID recognition is difficult in approximately 20% of all processes. In contrast, new IDs in the V-shaped notch were clearly recognized up to the final process. The results can be explained in terms of marking dot topography and choice of the marking location. First, for marking the beveled part in a V-shaped notch on a wafer, known as finer marking, the influence of any semiconductor processes in which a conventional ID on the surface has only limited readability is kept to a minimum. Second, a marking dot formed by conventional laser marking has a central depression due to the process of general heat distribution. In contrast, a marking dot formed by finer marking has a central peak protruding from the surface, which is more easily distinguished than a dot which has a central depression. A difference in contrast has a great influence on readability for identification in semiconductor processes.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"305 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114048646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra clean process gas recycling system for plasma process using krypton and xenon 氪氙等离子体超洁净工艺气体回收系统
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993674
I. Ohshima, Y. Ishihara, I. Akutsu, T. Ohmi
{"title":"Ultra clean process gas recycling system for plasma process using krypton and xenon","authors":"I. Ohshima, Y. Ishihara, I. Akutsu, T. Ohmi","doi":"10.1109/ISSM.2000.993674","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993674","url":null,"abstract":"Introduction of rare Kr(Xe) gases into ULSI mass production requires the recycling of exhaust gases. We describe a gas pumping system that enables efficient recycling of Kr and Xe gases. A newly developed screw pump is able to exhaust without involving the atmosphere in its exhaust gases. Moreover, this screw pump needs a smaller volume of purge gases to realize clean pumping than conventional dry pumps. A novel bellows pump can compress recycle gases without involving the atmosphere. These pumping systems enable ultra clean process gas recycling system for the plasma process using krypton and xenon.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122464929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realizing dynamic manufacturing service provisioning mechanism in order commitment service 在订单承诺服务中实现动态制造服务提供机制
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993609
Shi-Chung Chang, R. Guo, Y. Su, Y. Lai
{"title":"Realizing dynamic manufacturing service provisioning mechanism in order commitment service","authors":"Shi-Chung Chang, R. Guo, Y. Su, Y. Lai","doi":"10.1109/ISSM.2000.993609","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993609","url":null,"abstract":"In this paper a dynamic manufacturing service provisioning mechanism (DMSPM) is designed to flexibly create and execute manufacturing services under a virtual fab (VF) enabling framework The DMSPM exploits object-oriented (OO) technology to flexibly bind fab objects into services. It consists of four skeleton steps: name mapping, business process binding, resource reservation binding, and service management binding. To assess the feasibility and potential of DMSPM, the order commitment service (OCS) provided by a foundry serves as a study case. A prototype system is designed and implemented to realize DMSPM in the OCS application. The implementation demonstrated that current OO technology, CASE tools, Jab information infrastructure and data/information availability make DMSPM readily realizable and that DMSPM has a good potential for application to virtual Jab and e-business developments.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128416926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimized process for tungsten chemical-mechanical planarization throughput improvement 提高钨化学-机械刨平产量的优化工艺
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993699
K.W. Chen, Y. Wang, T. Wang, J. Wang
{"title":"Optimized process for tungsten chemical-mechanical planarization throughput improvement","authors":"K.W. Chen, Y. Wang, T. Wang, J. Wang","doi":"10.1109/ISSM.2000.993699","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993699","url":null,"abstract":"Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for the optimization of process throughput and integration. By the advance surface analysis of tungsten film and polishing pad, the influence and deviation of surface roughness of tungsten film during CMP upon different hardness of pads were investigated. From the results of the experiment, this article attempts to address the key point of non-linear tungsten polishing performance, which is different from the linear polishing phenomena of oxide film. In addition, the phenomena provide the hint to fulfilling the optimized procedure to improve the throughput and cost; that is that multiple steps and pads could be required to resolve the redundant process and promote the throughput. Finally, the marathon test would prove the stability and flexibility of the optimized process. There is over 25% throughput improvement compared with vendor's best-known method. The 30% /spl sim/ 50% efficiency of extended pad life and cost of reduced slurry could be enhanced. Details of the developed and optimized theory are demonstrated and appear to be reproducible on tungsten CMP.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Technology transfer at Internet speed 以互联网速度进行技术转让
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993608
Douglas Rettke
{"title":"Technology transfer at Internet speed","authors":"Douglas Rettke","doi":"10.1109/ISSM.2000.993608","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993608","url":null,"abstract":"You are the factory manager with two processes running, a third scheduled to ramp down and a fourth scheduled to startup. Then the new loadings forecast comes out and you discover that the process your factory was going to ramp down is ramping up and the new process startup has been pulled in. Is your factory flexible enough to commit to the new loadings forecast and still meet the startup schedule? There is only one way to find out, you go to the Internet and consult the Route and Tool Readiness (RTR) System. The Route and Tool Readiness system is a spreadsheet-based system accessible from the Intel Intranet, which links information from several different sources to give an integrated view of a startup project. These include tool schedules, route information, throughput time data and engineering contact names. As the time between process development and process transfer into manufacturing continues to decrease, the RTR system becomes more critical. It enables factory management to successfully deal with last-minute technology changes during transfer as well as sudden shifts in market demand between multiple technologies. At the same time, it makes technology transfer projects more productive, accurate, and faster.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115770717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability versus yield and die location in deep sub-micron VLSI 深亚微米超大规模集成电路的可靠性与良率和模具位置
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993650
W. Riordan, R. Miller, J. Hicks
{"title":"Reliability versus yield and die location in deep sub-micron VLSI","authors":"W. Riordan, R. Miller, J. Hicks","doi":"10.1109/ISSM.2000.993650","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993650","url":null,"abstract":"The results of multiple correlations between reliability and yield on a die level basis are presented for an advanced microprocessor fabricated using a 0.25 /spl mu/m, five layer metal CMOS logic process. Traceability information was programmed into each unit; investigated were infant mortality of edge die versus center die, effects of unusual sort yield signatures on infant mortality, alternating column effects, and the sources of variability of burn-in failures. The model that latent defect density is proportional to yield defect density was found to be in excellent agreement with experimental data over a wide range of yield values. The x-y die position yield was found to be an excellent predictor of infant mortality. The variation in infant mortality from wafer to wafer was found to be twice the lot to lot variation, consistent with the large number of single wafer processing tools used on advanced fabrication processes. Because the traceability information was part of the standard manufacturing flow this analysis was performed using very large, 1 million unit sample sizes.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114877394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nanometer-scale material analysis using Fourier transform mapping 利用傅里叶变换映射的纳米尺度材料分析
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993664
T. Ide, H. Tamegai
{"title":"Nanometer-scale material analysis using Fourier transform mapping","authors":"T. Ide, H. Tamegai","doi":"10.1109/ISSM.2000.993664","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993664","url":null,"abstract":"This paper presents a new technique for imaging material distribution based on a transmission electron micrograph. This technique, Fourier transform mapping, provides structural information of crystal with nanometer-scale resolution. This technique provides complimentary information to TEM-EDX technique, which provides microscopic information of chemical element. This technique is demonstrated by material analysis of LSI contacts. This demonstration shows the potential for Fourier transform mapping to be used as a microanalysis tool for LSI devices.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120937691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of hydrogenated water to future cooling system 氢化水在未来冷却系统中的应用
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993672
I. Yokoi, Y. Yamazaki, T. Abe, T. Ohmi
{"title":"Application of hydrogenated water to future cooling system","authors":"I. Yokoi, Y. Yamazaki, T. Abe, T. Ohmi","doi":"10.1109/ISSM.2000.993672","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993672","url":null,"abstract":"This study was carried on to contribute the application of hydrogenated water to a future cooling water system. In order to much improve cost of ownership (CoO) of cooling water, we firstly introduced hydrogenated city water to the cooling water system. Compared to a hydrogenated ultrapure water (H/sub 2/-UPW), it has a high pH value, resulting in it having a low oxidation-reduction potential (ORP) value so that it has the characteristics of flowing out suppression on even the surface of an iron pipeline. This application, based on control of pH and ORP value in water, is a candidate for future cooling water system to achieve initial and running cost reduction as well as ESH (environment, safety and health) promotion.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133865231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of a new ultrasonic liquid flowmeter for very low flow rate applicable to a thin pipe 一种适用于细管的超低流量超声液体流量计的研制
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993693
H. Ishikawa, M. Takamoto, K. Shimizu, H. Monji, G. Matsui
{"title":"Development of a new ultrasonic liquid flowmeter for very low flow rate applicable to a thin pipe","authors":"H. Ishikawa, M. Takamoto, K. Shimizu, H. Monji, G. Matsui","doi":"10.1109/ISSM.2000.993693","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993693","url":null,"abstract":"A new ultrasonic liquid flowmeter has been developed to measure very low flow rate. This flow meter consists of small disk ultrasonic transducers and measuring pipe whose diameter is less than 1 mm. The measuring pipe passed through the ultrasonic transducer two times making the loop feature. A very low flow rate less than 1ml/min can be measured accurately and stably.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129438483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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