Suppression of tungsten irregular growth in W chemical vapor deposition

Abstract

W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.