Optimized process for tungsten chemical-mechanical planarization throughput improvement

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993699

K.W. Chen, Y. Wang, T. Wang, J. Wang

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引用次数: 2

Abstract

Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for the optimization of process throughput and integration. By the advance surface analysis of tungsten film and polishing pad, the influence and deviation of surface roughness of tungsten film during CMP upon different hardness of pads were investigated. From the results of the experiment, this article attempts to address the key point of non-linear tungsten polishing performance, which is different from the linear polishing phenomena of oxide film. In addition, the phenomena provide the hint to fulfilling the optimized procedure to improve the throughput and cost; that is that multiple steps and pads could be required to resolve the redundant process and promote the throughput. Finally, the marathon test would prove the stability and flexibility of the optimized process. There is over 25% throughput improvement compared with vendor's best-known method. The 30% /spl sim/ 50% efficiency of extended pad life and cost of reduced slurry could be enhanced. Details of the developed and optimized theory are demonstrated and appear to be reproducible on tungsten CMP.

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提高钨化学-机械刨平产量的优化工艺

系统研究了钨(W)化学机械平面化(CMP)工艺特性，以优化工艺吞吐量和集成。通过对钨膜和抛光垫的前期表面分析，研究了抛光过程中钨膜表面粗糙度对抛光垫硬度的影响及其偏差。本文从实验结果出发，试图解决不同于氧化膜线性抛光现象的非线性抛光性能的关键点。此外，这些现象还为实现优化流程提供了提示，以提高生产效率和成本;也就是说，可能需要多个步骤和垫来解决冗余流程并提高吞吐量。最后，通过马拉松试验验证了优化过程的稳定性和灵活性。与供应商最知名的方法相比，吞吐量提高了25%以上。可以提高30% /spl sim/ 50%的延长垫层寿命的效率和降低浆液的成本。详细的开发和优化理论证明，似乎是可重复的钨CMP。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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