化学气相沉积中钨不规则生长的抑制

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993641

T. Morita, Y. Harada, F. Oki, H. Onoda

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引用次数: 0

摘要

低温W- cvd工艺中W的不规则生长是一个重要的问题。通过调节SiH/sub - 4//WF/sub - 6/流量比、改变W沉积顺序和在常温下还原气体中对附着层进行退火，成功地控制了W的不规则生长。介绍了低温W- cvd工艺中W不规则生长的控制及W不规则生长的机理。

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Suppression of tungsten irregular growth in W chemical vapor deposition

W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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