Chemical Vapor Deposition最新文献_第9页

Atomic Layer Deposition of LaPO4 and Ca:LaPO4** LaPO4和Ca:LaPO4的原子层沉积**

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI: 10.1002/cvde.201407112

Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen

{"title":"Atomic Layer Deposition of LaPO4 and Ca:LaPO4**","authors":"Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen","doi":"10.1002/cvde.201407112","DOIUrl":"10.1002/cvde.201407112","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 Thin films of lanthanum phosphate (LaPO4) are produced by atomic layer deposition (ALD) for the first time, using a precursor combination of (CH3)3PO4, La(thd)3 (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), H2O, and O3. The deposition process is studied via an in-situ quartz crystal microbalance (QCM) and found to be a two-step process in which both water and ozone contribute to the growth. The best results are obtained when both water and ozone are pulsed simultaneously. The growth is self-limiting by nature, and a stoichiometric LaPO4 phase can be obtained for a 1:1 pulsed ratio of the two precursors. The resulting LaPO4 films are amorphous as deposited, and crystallize to the monoclinic structure after annealing in air for 10 h at 1350 °C. The LaPO4 thin films can also be doped by calcium during growth by replacing some of the La(thd)3 pulses by Ca(thd)2. Films where 4.4% of the lanthanum in LaPO4 is replaced by calcium are obtained.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"269-273"},"PeriodicalIF":0.0,"publicationDate":"2014-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407112","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide† 透明导电氧化锌的气相沉积研究进展

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI: 10.1002/cvde.201400056

Andrea Illiberi, Paul Poodt, Pieter-Jan Bolt, Fred Roozeboom

引用次数: 28

Full CVD Reel-To-Reel Process to Obtain Perfectly Oriented Silicon Films on Metal Tapes with Oxide Buffer Layers** 全CVD卷到卷工艺，以获得完美的定向硅薄膜与氧化物缓冲层的金属带**

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI: 10.1002/cvde.201407107

Mikhail Moyzykh, Sergey Samoilenkov, Vadim Amelichev, Alexander Vasiliev, Mikhail Pozdnyakov, Alexey Mankevich, Vsevolod Tschepikov, Andrey Kaul

引用次数: 1

Luminescent Properties of Multilayered Eu2O3 and TiO2 Grown by Atomic Layer Deposition** 原子层沉积法制备Eu2O3和TiO2多层材料的发光性能**

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI: 10.1002/cvde.201407113

Per-Anders Hansen, Helmer Fjellvåg, Terje G. Finstad, Ola Nilsen

{"title":"Luminescent Properties of Multilayered Eu2O3 and TiO2 Grown by Atomic Layer Deposition**","authors":"Per-Anders Hansen, Helmer Fjellvåg, Terje G. Finstad, Ola Nilsen","doi":"10.1002/cvde.201407113","DOIUrl":"10.1002/cvde.201407113","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 Atomic layer deposition (ALD) is used to control the interatomic interactions of Eu and Ti in multilayered structures, as measured by characterizing the luminescent properties of the deposited material. Luminescent multilayer structures of Eu2O3 and TiO2 are deposited as thin films by ALD at 300 °C using Eu(thd)3/O3 and TiCl4/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as precursor systems. The individual layer thickness of the multilayered structure is produced from first N ALD cycles Eu2O3 and then N ALD cycles TiO2 (N = 1 to 50), while the total film thickness is kept constant. The thinnest distinct layers are detected for N = 10, where each layer is measured to be less than 0.4 nm thick. The as-deposited films are smooth (root mean square (rms) roughness < 0.4 nm) and amorphous, independent of the layer thickness, N. The refractive index and extinction coefficient are also independent of N, while the luminescence efficiency is constant for N up to 10 cycles, and decreases for thicker superlayers. Annealing deteriorates the layered structures, causing a decrease in luminescence efficiency for thin superlayers, while thick superlayers increase in efficiency upon annealing. The films are characterized by spectroscopic ellipsometry (SE), photoluminescence (PL), X-ray diffraction (XRD), X-ray fluorescence (XRF), X-ray reflectivity (XRR), and atomic force microscopy (AFM).\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"274-281"},"PeriodicalIF":0.0,"publicationDate":"2014-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407113","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

MOCVD of TiO2 Thin Films using a Heteroleptic Titanium Complex: Precursor Evaluation and Investigation of Optical, Photoelectrochemical and Electrical Properties† 钛络合物制备TiO2薄膜的MOCVD研究:前驱体评价及光学、光电化学和电学性能研究

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI: 10.1002/cvde.201407125

Manish Banerjee, Van-Son Dang, Michal Bledowski, Radim Beranek, Hans-Werner Becker, Detlef Rogalla, Eugen Edengeiser, Martina Havenith, Andreas D. Wieck, Anjana Devi

{"title":"MOCVD of TiO2 Thin Films using a Heteroleptic Titanium Complex: Precursor Evaluation and Investigation of Optical, Photoelectrochemical and Electrical Properties†","authors":"Manish Banerjee, Van-Son Dang, Michal Bledowski, Radim Beranek, Hans-Werner Becker, Detlef Rogalla, Eugen Edengeiser, Martina Havenith, Andreas D. Wieck, Anjana Devi","doi":"10.1002/cvde.201407125","DOIUrl":"10.1002/cvde.201407125","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 A new heteroleptic titanium precursor with a mixed oxygen/nitrogen coordination sphere [Ti(dmap)2(NMe2)2] (Hdmap = 1–dimethylamino–2–propanol) is synthesized by a simple elimination reaction on tetrakis–dimethylaminotitanium(IV) [Ti(NMe2)4]. The compound shows encouraging results in terms of chemical and thermal stability compared to the parent alkyl amide [Ti(NMe2)4], and is therefore more suitable for MOCVD applications. TiO2 thin films are grown on Si(100) and ITO-coated borosilicate glass substrates via MOCVD in the temperature range 500–800°C. The deposition temperature has a significant effect on the phase and microstructure of the TiO2 films obtained, which influences the functional properties. The optical bandgaps of the films are in the range 2.92–3.36 eV. The best photocurrent response (1.5 mA cm−2 under AM 1.5G conditions) in aqueous electrolytes is observed for films grown at 700°C having improved crystallinity and porous columnar structure.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"224-233"},"PeriodicalIF":0.0,"publicationDate":"2014-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407125","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors† 杂疏胍前驱体制备TiO2和ZrO2薄膜的原子层沉积研究

Chemical Vapor Deposition Pub Date : 2014-07-24 DOI: 10.1002/cvde.201407115

Mikko Kaipio, Timothee Blanquart, Manish Banerjee, Ke Xu, Jaakko Niinistö, Valentino Longo, Kenichiro Mizohata, Anjana Devi, Mikko Ritala, Markku Leskelä

{"title":"Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors†","authors":"Mikko Kaipio, Timothee Blanquart, Manish Banerjee, Ke Xu, Jaakko Niinistö, Valentino Longo, Kenichiro Mizohata, Anjana Devi, Mikko Ritala, Markku Leskelä","doi":"10.1002/cvde.201407115","DOIUrl":"10.1002/cvde.201407115","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 In this study the atomic layer deposition (ALD) of TiO2 and ZrO2 using two heteroleptic amido-guanidinate precursors, [Ti(NEtMe)3(guan-NEtMe)] and [Zr(NEtMe)3(guan-NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self-limiting growth at a deposition temperature of 275°C. The zirconium precursor especially gives high growth rates (0.8/1.0 Å per cycle with H2O/O3). The films are also relatively smooth, as determined by atomic force microscopy (AFM). The composition of the films is examined using X-ray photoelectron spectroscopy (XPS) and time of flight elastic recoil detection analysis (TOF-ERDA). When using ozone as the oxygen source the films present very high purity. The results are compared and discussed with respect to earlier studies on guanidinate, as well as homoleptic amido precursors.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"209-216"},"PeriodicalIF":0.0,"publicationDate":"2014-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407115","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase 氧化钒化合物:结构、性质和气相生长

Chemical Vapor Deposition Pub Date : 2014-07-22 DOI: 10.1002/cvde.201400057

Naoufal Bahlawane, Damien Lenoble

引用次数: 128

Surface Decoration of ϵ-Fe2O3 Nanorods by CuO Via a Two-Step CVD/Sputtering Approach** 两步CVD/溅射法制备ϵ-Fe2O3纳米棒表面的CuO修饰**

Chemical Vapor Deposition Pub Date : 2014-07-22 DOI: 10.1002/cvde.201407108

Davide Barreca, Giorgio Carraro, Daniel Peeters, Alberto Gasparotto, Chiara Maccato, Wilhelmus M. M. Kessels, Valentino Longo, Francesca Rossi, Elza Bontempi, Cinzia Sada, Anjana Devi

{"title":"Surface Decoration of ϵ-Fe2O3 Nanorods by CuO Via a Two-Step CVD/Sputtering Approach**","authors":"Davide Barreca, Giorgio Carraro, Daniel Peeters, Alberto Gasparotto, Chiara Maccato, Wilhelmus M. M. Kessels, Valentino Longo, Francesca Rossi, Elza Bontempi, Cinzia Sada, Anjana Devi","doi":"10.1002/cvde.201407108","DOIUrl":"10.1002/cvde.201407108","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 In this paper we report on the first example of Fe2O3/CuO composites fabricated by a two-step vapor-phase synthetic strategy. The target route is based on the CVD of Fe2O3 nanorod arrays on Si(100) at 400 °C starting from Fe(hfa)2TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′,N′-tetramethylethylenediamine), followed by radio frequency (RF) copper sputtering for various process durations, and final ex-situ annealing in air. The combined use of complementary structural, morphological, and chemical analyses give evidence of the formation of pure nanocomposite systems, characterized by the presence of the sole ϵ-Fe2O3 and CuO phases. The unique features of the adopted approach enable an efficient surface decoration of ϵ-Fe2O3 rods by CuO nanoparticles a few nm in diameter, resulting in an intimate contact between the two oxides, and a CuO content tunable through variations of the sole sputtering time.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"313-319"},"PeriodicalIF":0.0,"publicationDate":"2014-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407108","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD† 用APCVD法研究衬底相对源位置对纯纳米氧化锡光电性能和结构性能的影响

Chemical Vapor Deposition Pub Date : 2014-07-22 DOI: 10.1002/cvde.201407103

Masoudeh Maleki, Seyed Mohammad Rozati

引用次数: 3

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors† 4族和5族过渡金属氧化物薄膜的原子层沉积:杂电前驱体的研究

Chemical Vapor Deposition Pub Date : 2014-07-20 DOI: 10.1002/cvde.201400055

Timothee Blanquart, Jaakko Niinistö, Mikko Ritala, Markku Leskelä

{"title":"Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors†","authors":"Timothee Blanquart, Jaakko Niinistö, Mikko Ritala, Markku Leskelä","doi":"10.1002/cvde.201400055","DOIUrl":"10.1002/cvde.201400055","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated for its unique advantages such as excellent repeatability, conformity, and thickness control at the atomic level. ALD precursor chemistry has mainly been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides, and alkoxides, however these precursors have drawbacks such as possible halide contamination and low thermal stabilities in the case of the alkylamides and alkoxides. Consequently, heteroleptic precursors have been investigated as alternatives to the existing homoleptic counterparts, leading to the development of several advantageous processes. Nevertheless, there is no thematic review dedicated to the heteroleptic precursors and their properties, and it seems that no coherent strategy has been adopted for the development of heteroleptic precursors. This review gives a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review on the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is provided. Trends in the properties of heteroleptic ALD precursors, based on the literature review and recent experimental data, are discussed.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"189-208"},"PeriodicalIF":0.0,"publicationDate":"2014-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201400055","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27