Chemical Vapor Deposition最新文献_第9页

Aluminizing of Nickel Alloys by CVD. The Effect of HCl Flow† 镍合金的CVD渗铝。HCl流量的影响

Chemical Vapor Deposition Pub Date : 2014-02-21 DOI: 10.1002/cvde.201307090

Bartek Wierzba, Katarzyna Tkacz-Śmiech, Andrzej Nowotnik, Kamil Dychtoń

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引用次数: 4

Combinatorial Atmospheric Pressure CVD of a Composite TiO2/SnO2 Thin Film† 复合TiO2/SnO2薄膜的组合常压CVD研究

Chemical Vapor Deposition Pub Date : 2014-02-21 DOI: 10.1002/cvde.201307081

Sanjayan Sathasivam, Andreas Kafizas, Sapna Ponja, Nicholas Chadwick, Davinder S. Bhachu, Salem M. Bawaked, Abdullah Y. Obaid, Shaeel Al-Thabaiti, Sulaiman N. Basahel, Claire J. Carmalt, Ivan P. Parkin

{"title":"Combinatorial Atmospheric Pressure CVD of a Composite TiO2/SnO2 Thin Film†","authors":"Sanjayan Sathasivam, Andreas Kafizas, Sapna Ponja, Nicholas Chadwick, Davinder S. Bhachu, Salem M. Bawaked, Abdullah Y. Obaid, Shaeel Al-Thabaiti, Sulaiman N. Basahel, Claire J. Carmalt, Ivan P. Parkin","doi":"10.1002/cvde.201307081","DOIUrl":"10.1002/cvde.201307081","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>Combinatorial atmospheric pressure (cAP)CVD is used to deposit a film of graded composition from mainly TiO<sub>2</sub> to TiO<sub>2</sub>/SnO<sub>2</sub> to mainly SnO<sub>2</sub>. This is the first cAPCVD study of a TiO<sub>2</sub>/SnO<sub>2</sub> system. The thin film is characterized using a range of techniques such as X-ray diffraction (XRD), wavelength dispersive X-ray (WDX) spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and ultra violet-visible (UV-vis) spectroscopy. It is found that, at various positions on the film, there are intimate compositions of TiO<sub>2</sub> and SnO<sub>2</sub>. The photocatalytic activity is examined via the degradation of a Resazurin-based ‘intelligent ink’ under 365 nm wavelength irradiation. The change in the concentration of the dye can be monitored by digital imaging alone. The results show how TiO<sub>2</sub>-rich regions are photocatalytically active, producing a maximum formal quantum yield of 3.32 × 10<sup>−4</sup> molecules per absorbed photon. The sheet resistance is determined using a four-point probe via the van der Pauw method. The conductivity is highest in the SnO<sub>2</sub>-rich and thicker regions of the film, however some of the intimate composite regions of TiO<sub>2</sub>/SnO<sub>2</sub> show both conductivity and photocatalytic activity.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 1-2-3","pages":"69-79"},"PeriodicalIF":0.0,"publicationDate":"2014-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201307081","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51319567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates† PEN衬底上低温原子层沉积Al2O3薄膜的表征

Chemical Vapor Deposition Pub Date : 2014-02-21 DOI: 10.1002/cvde.201307082

Kyung-Hyun Choi, Kamran Ali, Chang Young Kim, Nauman Malik Muhammad

引用次数: 10

Chem. Vap. Deposition (10–11–12/2013)

Chemical Vapor Deposition Pub Date : 2013-12-11 DOI: 10.1002/cvde.201371013

引用次数: 0

Chem. Vap. Deposition (10–11–12/2013)

Chemical Vapor Deposition Pub Date : 2013-12-11 DOI: 10.1002/cvde.201371012

引用次数: 0

Potential of Hexyl Acrylate Monomer as an Initiator in Photo-initiated CVD† 丙烯酸己酯单体作为光引发CVD引发剂的潜力

Chemical Vapor Deposition Pub Date : 2013-11-20 DOI: 10.1002/cvde.201304322

Aravind Suresh, Daniel Anastasio, Daniel D. Burkey

引用次数: 11

Design Strategies for Reduced-scale Surface Composition Gradients via CVD Copolymerization† 基于CVD共聚的小尺度表面组成梯度的设计策略

Chemical Vapor Deposition Pub Date : 2013-11-18 DOI: 10.1002/cvde.201307057

Yaseen Elkasabi, Aftin M. Ross, Jonathan Oh, Michael P. Hoepfner, H. Scott Fogler, Joerg Lahann, Paul H. Krebsbach

引用次数: 2

Facile and Fast Deposition of Amorphous TiO2 Film under Atmospheric Pressure and at Room Temperature, and its High Photocatalytic Activity under UV-C Light† 常压和室温下易快速沉积非晶TiO2薄膜及其UV-C光催化活性

Chemical Vapor Deposition Pub Date : 2013-11-18 DOI: 10.1002/cvde.201307088

Zhi-Guang Sun, Xiao-Song Li, Xiaobing Zhu, Xiao-Qing Deng, Da-Lei Chang, Ai-Min Zhu

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引用次数: 23

Growth-rate Enhancement of High-quality, Low-loss CVD-produced Diamond Disks Grown for Microwave Windows Application† 用于微波窗口应用的高质量、低损耗cvd生产的金刚石磁盘的生长速率增强

Chemical Vapor Deposition Pub Date : 2013-11-12 DOI: 10.1002/cvde.201307058

Sergey Bogdanov, Anatoly Vikharev, Aleksei Gorbachev, Anatoly Muchnikov, Dmitry Radishev, Nikolai Ovechkin, Vladimir Parshin

{"title":"Growth-rate Enhancement of High-quality, Low-loss CVD-produced Diamond Disks Grown for Microwave Windows Application†","authors":"Sergey Bogdanov, Anatoly Vikharev, Aleksei Gorbachev, Anatoly Muchnikov, Dmitry Radishev, Nikolai Ovechkin, Vladimir Parshin","doi":"10.1002/cvde.201307058","DOIUrl":"10.1002/cvde.201307058","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>The effect of nitrogen addition on the growth rate, quality, and properties of polycrystalline diamond grown by microwave plasma assisted (MPA)CVD is investigated. Two series of experiments are performed at two different microwave power densities (40 and 110 W cm<sup>-3</sup>) using a 2.45 GHz cylindrical microwave reactor. The results show that the beneficial effect of nitrogen is more distinct at higher microwave power densities. To investigate the properties of polycrystalline diamond grown with nitrogen addition, a thick diamond disk of 50 mm diameter is grown with an addition of 50 ppm nitrogen using a 2.45 GHz ellipsoidal microwave reactor. The grown diamond disk has a thermal conductivity of 17.3 W cm<sup>-1</sup> K<sup>-1</sup> and dielectric loss tangent of 3.7 × 10<sup>-5</sup> at a frequency of 170 GHz, and its parameters are suitable for application in microwave windows (e.g., gyrotron windows). Our results indicate that it is possible to achieve the increased (by a factor of 2.5) growth rates by nitrogen addition without significant degradation of diamond quality, and properties such as thermal conductivity and dielectric loss tangent.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 1-2-3","pages":"32-38"},"PeriodicalIF":0.0,"publicationDate":"2013-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201307058","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51318924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

Low-Temperature MOCVD of Crystalline Ga2O3 Nanowires using tBu3Ga† 用tBu3Ga†制备Ga2O3纳米线的低温MOCVD

Chemical Vapor Deposition Pub Date : 2013-11-06 DOI: 10.1002/cvde.201307060

Stephan Schulz, Georg Bendt, Wilfried Assenmacher, Daniel Sager, Gerd Bacher

引用次数: 14