Manish Banerjee, Van-Son Dang, Michal Bledowski, Radim Beranek, Hans-Werner Becker, Detlef Rogalla, Eugen Edengeiser, Martina Havenith, Andreas D. Wieck, Anjana Devi
{"title":"钛络合物制备TiO2薄膜的MOCVD研究:前驱体评价及光学、光电化学和电学性能研究","authors":"Manish Banerjee, Van-Son Dang, Michal Bledowski, Radim Beranek, Hans-Werner Becker, Detlef Rogalla, Eugen Edengeiser, Martina Havenith, Andreas D. Wieck, Anjana Devi","doi":"10.1002/cvde.201407125","DOIUrl":null,"url":null,"abstract":"<div>\n \n <section>\n \n <p>A new heteroleptic titanium precursor with a mixed oxygen/nitrogen coordination sphere [Ti(dmap)<sub>2</sub>(NMe<sub>2</sub>)<sub>2</sub>] (Hdmap = 1–dimethylamino–2–propanol) is synthesized by a simple elimination reaction on tetrakis–dimethylaminotitanium(IV) [Ti(NMe<sub>2</sub>)<sub>4</sub>]. The compound shows encouraging results in terms of chemical and thermal stability compared to the parent alkyl amide [Ti(NMe<sub>2</sub>)<sub>4</sub>], and is therefore more suitable for MOCVD applications. TiO<sub>2</sub> thin films are grown on Si(100) and ITO-coated borosilicate glass substrates via MOCVD in the temperature range 500–800°C. The deposition temperature has a significant effect on the phase and microstructure of the TiO<sub>2</sub> films obtained, which influences the functional properties. The optical bandgaps of the films are in the range 2.92–3.36 eV. The best photocurrent response (1.5 mA cm<sup>−2</sup> under AM 1.5G conditions) in aqueous electrolytes is observed for films grown at 700°C having improved crystallinity and porous columnar structure.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"224-233"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407125","citationCount":"4","resultStr":"{\"title\":\"MOCVD of TiO2 Thin Films using a Heteroleptic Titanium Complex: Precursor Evaluation and Investigation of Optical, Photoelectrochemical and Electrical Properties†\",\"authors\":\"Manish Banerjee, Van-Son Dang, Michal Bledowski, Radim Beranek, Hans-Werner Becker, Detlef Rogalla, Eugen Edengeiser, Martina Havenith, Andreas D. Wieck, Anjana Devi\",\"doi\":\"10.1002/cvde.201407125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <section>\\n \\n <p>A new heteroleptic titanium precursor with a mixed oxygen/nitrogen coordination sphere [Ti(dmap)<sub>2</sub>(NMe<sub>2</sub>)<sub>2</sub>] (Hdmap = 1–dimethylamino–2–propanol) is synthesized by a simple elimination reaction on tetrakis–dimethylaminotitanium(IV) [Ti(NMe<sub>2</sub>)<sub>4</sub>]. The compound shows encouraging results in terms of chemical and thermal stability compared to the parent alkyl amide [Ti(NMe<sub>2</sub>)<sub>4</sub>], and is therefore more suitable for MOCVD applications. TiO<sub>2</sub> thin films are grown on Si(100) and ITO-coated borosilicate glass substrates via MOCVD in the temperature range 500–800°C. The deposition temperature has a significant effect on the phase and microstructure of the TiO<sub>2</sub> films obtained, which influences the functional properties. The optical bandgaps of the films are in the range 2.92–3.36 eV. The best photocurrent response (1.5 mA cm<sup>−2</sup> under AM 1.5G conditions) in aqueous electrolytes is observed for films grown at 700°C having improved crystallinity and porous columnar structure.</p>\\n </section>\\n </div>\",\"PeriodicalId\":10093,\"journal\":{\"name\":\"Chemical Vapor Deposition\",\"volume\":\"20 7-8-9\",\"pages\":\"224-233\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1002/cvde.201407125\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chemical Vapor Deposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOCVD of TiO2 Thin Films using a Heteroleptic Titanium Complex: Precursor Evaluation and Investigation of Optical, Photoelectrochemical and Electrical Properties†
A new heteroleptic titanium precursor with a mixed oxygen/nitrogen coordination sphere [Ti(dmap)2(NMe2)2] (Hdmap = 1–dimethylamino–2–propanol) is synthesized by a simple elimination reaction on tetrakis–dimethylaminotitanium(IV) [Ti(NMe2)4]. The compound shows encouraging results in terms of chemical and thermal stability compared to the parent alkyl amide [Ti(NMe2)4], and is therefore more suitable for MOCVD applications. TiO2 thin films are grown on Si(100) and ITO-coated borosilicate glass substrates via MOCVD in the temperature range 500–800°C. The deposition temperature has a significant effect on the phase and microstructure of the TiO2 films obtained, which influences the functional properties. The optical bandgaps of the films are in the range 2.92–3.36 eV. The best photocurrent response (1.5 mA cm−2 under AM 1.5G conditions) in aqueous electrolytes is observed for films grown at 700°C having improved crystallinity and porous columnar structure.
期刊介绍：
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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