Chemical Vapor Deposition最新文献_第10页

Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films† 氧化铒薄膜原子层沉积的环戊二烯基前驱体

Chemical Vapor Deposition Pub Date : 2014-07-20 DOI: 10.1002/cvde.201407116

Timothee Blanquart, Mikko Kaipio, Jaakko Niinistö, Marco Gavagnin, Valentino Longo, Laurie Blanquart, Clement Lansalot, W. Noh, Heinz D. Wanzenböck, Mikko Ritala, Markku Leskelä

{"title":"Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films†","authors":"Timothee Blanquart, Mikko Kaipio, Jaakko Niinistö, Marco Gavagnin, Valentino Longo, Laurie Blanquart, Clement Lansalot, W. Noh, Heinz D. Wanzenböck, Mikko Ritala, Markku Leskelä","doi":"10.1002/cvde.201407116","DOIUrl":"10.1002/cvde.201407116","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>In this article, three novel cyclopentadienyl precursors are evaluated for the atomic layer deposition (ALD) of erbium oxide, with either ozone or water as the oxygen source. The erbium precursors evaluated are Er(<sup><i>i</i></sup>PrCp)<sub>3</sub>, Er(MeCp)<sub>2</sub>(<sup><i>i</i></sup>Pr-amd), and Er(<sup><i>n</i></sup>BuCp)<sub>3</sub>. The films are deposited on silicon within the temperature range 200–400°C. Self-limiting growth is achieved with all three precursors, with both ozone and water. It is found that the water processes of all three precursors present significantly higher growth rates when compared to the ozone processes. An up to three-fold increase in the growth rate is observed for the water processes of Er(<sup><i>i</i></sup>PrCp)<sub>3</sub> and Er(MeCp)<sub>2</sub>(<sup><i>i</i></sup>Pr-amd) (amd: amidinate) when compared to their ozone processes. The films are smooth and uniform, as determined by atomic force microscopy (AFM) (rms roughness < 3% of film thickness). The composition of the films is investigated by means of X-ray photoelectron spectroscopy (XPS). It is found that the films contain small amounts of carbon as an impurity, especially in the case of ozone-processed films. Using Er(<sup><i>n</i></sup>BuCp)<sub>3</sub> together with ozone as the oxygen source, a highly conformal Er<sub>2</sub>O<sub>3</sub> thin film is deposited on a 1:60 high-aspect-ratio substrate. This is the first report of the conformal growth of Er<sub>2</sub>O<sub>3</sub> thin films by ALD on a high-aspect-ratio structure.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Catalyst-free Growth Mechanism and Structure of Graphene-like Nanosheets Formed by Hot-Filament CVD† 热丝CVD制备类石墨烯纳米片的无催化剂生长机理和结构

Chemical Vapor Deposition Pub Date : 2014-06-30 DOI: 10.1002/cvde.201407105

Biben Wang, Kun Zheng, Qijin Cheng, Li Wang, Chengcheng Chen, Guobo Dong

引用次数: 7

Chem. Vap. Deposition (4–5–6/2014) Chem.Vap.沉积 (4-5-6/2014)

Chemical Vapor Deposition Pub Date : 2014-06-05 DOI: 10.1002/cvde.201474562

引用次数: 0

Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition† 光学微腔的原子层沉积修饰与共振调谐

Chemical Vapor Deposition Pub Date : 2014-06-05 DOI: 10.1002/cvde.201300054

Jiao Wang, Gaoshan Huang, Yongfeng Mei

{"title":"Modification and Resonance Tuning of Optical Microcavities by Atomic Layer Deposition†","authors":"Jiao Wang, Gaoshan Huang, Yongfeng Mei","doi":"10.1002/cvde.201300054","DOIUrl":"10.1002/cvde.201300054","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>Recently, enormous interest has been focused on the nanofabrication of optical micro- and nanocavities for applications in lab-on-a-chip and quantum optics. At the same time, the atomic layer deposition (ALD) process presents several advantages for the fabrication and modification of micro- and nanostructures because of its atomic level thickness fine-tuning and perfect coating conformability in three-dimensional (3D) structures. Hence, ALD technology has been directed into the field of optical microcavities for the tracking and tuning of their properties. In this short review, we will summarize recent progress in the application of ALD on optical microcavities. Firstly, we will briefly introduce ALD technology and emphasize its distinctive features when applied to optical microcavities. Then, various microcavities such as photonic crystals, opals, and tubular microcavities will be illustrated to demonstrate their development with the assistance of ALD technology. Such an influential manufacturing tool for optical devices could inspire numerous interesting applications, as concluded in the final part.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201300054","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51317943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Chem. Vap. Deposition (4–5–6/2014) Chem.Vap.沉积 (4-5-6/2014)

Chemical Vapor Deposition Pub Date : 2014-06-05 DOI: 10.1002/cvde.201474563

引用次数: 0

Cover image from C. Loho and co-workers (Chem. Vap. Deposition 2014, 20, 152) 封面图片来自C. Loho和同事(化学。Vap。沉积，2014,20,152)

Chemical Vapor Deposition Pub Date : 2014-06-05 DOI: 10.1002/cvde.201474561

引用次数: 0

CO2-Laser Flash Evaporation as Novel CVD Precursor Delivery System for Functional Thin Film Growth† co2 -激光闪蒸作为新型CVD前驱体递送系统用于功能薄膜生长

Chemical Vapor Deposition Pub Date : 2014-05-16 DOI: 10.1002/cvde.201307089

Christoph Loho, Azad J. Darbandi, Ruzica Djenadic, Oliver Clemens, Horst Hahn

{"title":"CO2-Laser Flash Evaporation as Novel CVD Precursor Delivery System for Functional Thin Film Growth†","authors":"Christoph Loho, Azad J. Darbandi, Ruzica Djenadic, Oliver Clemens, Horst Hahn","doi":"10.1002/cvde.201307089","DOIUrl":"10.1002/cvde.201307089","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>A novel approach for functional thin film deposition using laser flash evaporation as the precursor delivery system is reported. In this newly established CO<sub>2</sub>-laser-assisted (LA)CVD, solid precursors with low volatility are non-selectively sublimated by absorption of infrared laser radiation. Thus, the method allows for the highly controlled growth of multicomponent thin films with desired composition and stoichiometry over the entire growth period. Thin film microstructural features, such as the morphology, density, and thickness of the films can be adjusted by tuning the process parameters. These features, characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy (RS), are discussed for LiCoO<sub>2</sub> thin films. Additional analyses include X-ray photoelectron spectroscopy (XPS), inductively coupled plasma optical emission spectrometry (ICP-OES), cyclic voltammetry (CV), and galvanostatic cycling.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201307089","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51319941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique† 热等离子体增强铜膜沉积的合成-输运复合CVD技术

Chemical Vapor Deposition Pub Date : 2014-05-08 DOI: 10.1002/cvde.201307078

Maxim S. Polyakov, Aram M. Badalyan, Vasiliy V. Kaichev, Igor K. Igumenov

{"title":"Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique†","authors":"Maxim S. Polyakov, Aram M. Badalyan, Vasiliy V. Kaichev, Igor K. Igumenov","doi":"10.1002/cvde.201307078","DOIUrl":"10.1002/cvde.201307078","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Metallic copper thin layers are deposited by means of a modified metal-organic (MO)CVD method via passing formic acid vapor through a finely dispersed powder of a solid metal-containing reactant (Cu/CuO) under thermal and plasma activation. To characterize the copper layers obtained, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) and UV-vis spectroscopy, scanning electron microscopy (SEM), diffraction of synchrotron radiation (DSR) analyses, and laser interferometry, are used. The layers are found to be crystalline with a nanometer-scale grain structure, the parameters of which depend on the experimental conditions and chemical composition, with a predominant content of copper in the metallic state, Cu<sup>0</sup>. It is revealed that the plasma activation causes a decrease in the mean size of copper grains, as well as film thickness. Average growth rates inherent in the films obtained under thermal and plasma conditions are calculated. Based on studying the composition of a gas-phase copper complex synthesized, a schematic diagram of chemical conversion is suggested for the combined synthesis-transport process (CST).</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201307078","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51319510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

CVD of Pt(C5H9)2 to Synthesize Highly Dispersed Pt/SBA-15 Catalysts for Hydrogenation of Chloronitrobenzene† Pt(C5H9)2 CVD合成高分散Pt/SBA-15氯硝基苯加氢催化剂

Chemical Vapor Deposition Pub Date : 2014-05-02 DOI: 10.1002/cvde.201307091

Manman Jiang, Mingming Zhang, Chuang Li, Christopher T. Williams, Changhai Liang

引用次数: 6

Pulsed PECVD for Low-temperature Growth of Vertically Aligned Carbon Nanotubes† 脉冲PECVD低温生长垂直排列碳纳米管†

Chemical Vapor Deposition Pub Date : 2014-04-30 DOI: 10.1002/cvde.201307093

Mahananda Baro, Dolly Gogoi, Arup Ratan Pal, Nirab Chandra Adhikary, Heremba Bailung, Joyanti Chutia

{"title":"Pulsed PECVD for Low-temperature Growth of Vertically Aligned Carbon Nanotubes†","authors":"Mahananda Baro, Dolly Gogoi, Arup Ratan Pal, Nirab Chandra Adhikary, Heremba Bailung, Joyanti Chutia","doi":"10.1002/cvde.201307093","DOIUrl":"10.1002/cvde.201307093","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Pulsed plasma-enhanced (PE)CVD is used for the growth of vertically aligned multiwall carbon nanotubes (CNTs) at a low temperature range of 350–490 °C. A pulsed plasma is generated by the application of a rectangular negative pulse to the substrate electrode with an on time of 4.5 μs, off time of 5.5 μs, duty cycle of 45%, and pulse repetition frequency of 100 kHz. CNTs are synthesized from Ni catalyst film of 20–40 nm thickness deposited on a silicon substrate under pressures of 0.01 and 0.5 Torr by magnetron sputtering. The effect of Ni catalyst film morphology on low temperature growth of CNTs by pulsed PECVD is studied. It is found that CNTs grown from Ni catalyst films depend on the process pressure employed to prepare the film by magnetron sputtering. A comparison with the direct current (DC) discharge-produced CNTs reveals that the growth rate of pulsed plasma-produced CNTs is two times higher. CH species density is studied using optical emission spectroscopy (OES) by an actinometrical approach, which shows that DC discharge plasma has a higher CH concentration, but still has a lower growth rate. Further, it is observed that using pulsed plasma, growth of CNTs is possible at temperatures down to 350 °C, whereas in the case of DC discharge plasma, CNTs growth is possible only at temperatures down to 450 °C in the present experimental set-up. Possible reasons for the better performance of pulsed plasma in respect of growth rate and low temperature growth are discussed.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201307093","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23