热等离子体增强铜膜沉积的合成-输运复合CVD技术

Maxim S. Polyakov, Aram M. Badalyan, Vasiliy V. Kaichev, Igor K. Igumenov
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引用次数: 2

摘要

采用改进的金属-有机(MO)CVD方法,通过甲酸蒸汽在热和等离子体活化下,通过含有固体金属的反应物(Cu/CuO)的精细分散粉末,沉积金属铜薄层。为了表征所获得的铜层,使用了x射线光电子能谱(XPS)、傅里叶变换红外(FTIR)和紫外可见光谱(UV-vis)、扫描电子显微镜(SEM)、同步辐射衍射(DSR)分析和激光干涉测量。发现这些层是具有纳米级晶粒结构的晶体,其参数取决于实验条件和化学成分,金属态铜的主要含量为Cu0。结果表明,等离子体活化使铜晶粒的平均尺寸和膜厚度减小。计算了在热和等离子体条件下获得的薄膜固有的平均生长速率。在研究气相铜配合物组成的基础上,提出了合成-输运联合过程的化学转化示意图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique†

Metallic copper thin layers are deposited by means of a modified metal-organic (MO)CVD method via passing formic acid vapor through a finely dispersed powder of a solid metal-containing reactant (Cu/CuO) under thermal and plasma activation. To characterize the copper layers obtained, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) and UV-vis spectroscopy, scanning electron microscopy (SEM), diffraction of synchrotron radiation (DSR) analyses, and laser interferometry, are used. The layers are found to be crystalline with a nanometer-scale grain structure, the parameters of which depend on the experimental conditions and chemical composition, with a predominant content of copper in the metallic state, Cu0. It is revealed that the plasma activation causes a decrease in the mean size of copper grains, as well as film thickness. Average growth rates inherent in the films obtained under thermal and plasma conditions are calculated. Based on studying the composition of a gas-phase copper complex synthesized, a schematic diagram of chemical conversion is suggested for the combined synthesis-transport process (CST).

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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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