Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD†

Masoudeh Maleki, Seyed Mohammad Rozati
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引用次数: 3

Abstract

Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 Ω/□. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.

用APCVD法研究衬底相对源位置对纯纳米氧化锡光电性能和结构性能的影响
采用简单而廉价的常压CVD方法,将纯氧化锡(TO)薄膜以相对于源位置的不同衬底角度沉积在玻璃衬底上。沉积温度恒定在500℃左右,以流量为100 sccm的氧气作为载气和氧化剂。对薄片电阻的研究表明,电阻率在106和。241Ω/□。x射线衍射(XRD)也表明,在不同的衬底角度沉积的所有薄膜都是多晶结构,优选取向为(110)。扫描电子显微镜(SEM)图像也显示了所有薄膜表面均匀的冲击结构。光学性质显示出明显的变化,作为基板位置相对于源的结果。
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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
自引率
0.00%
发文量
0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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