Atomic Layer Deposition of LaPO4 and Ca:LaPO4**

Chemical Vapor Deposition Pub Date : 2014-07-25 DOI:10.1002/cvde.201407112

Henrik Hovde Sønsteby, Erik Østreng, Helmer Fjellvåg, Ola Nilsen

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引用次数: 9

Abstract

Thin films of lanthanum phosphate (LaPO₄) are produced by atomic layer deposition (ALD) for the first time, using a precursor combination of (CH₃)₃PO₄, La(thd)₃ (Hthd = 2,2,6,6-tetramethylhepta-3,5-dione), H₂O, and O₃. The deposition process is studied via an in-situ quartz crystal microbalance (QCM) and found to be a two-step process in which both water and ozone contribute to the growth. The best results are obtained when both water and ozone are pulsed simultaneously. The growth is self-limiting by nature, and a stoichiometric LaPO₄ phase can be obtained for a 1:1 pulsed ratio of the two precursors. The resulting LaPO₄ films are amorphous as deposited, and crystallize to the monoclinic structure after annealing in air for 10 h at 1350 °C. The LaPO₄ thin films can also be doped by calcium during growth by replacing some of the La(thd)₃ pulses by Ca(thd)₂. Films where 4.4% of the lanthanum in LaPO₄ is replaced by calcium are obtained.

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LaPO4和Ca:LaPO4的原子层沉积**

以(CH3)3PO4、La(thd)3 (Hthd = 2,2,6,6-四甲基庚-3,5-二酮)、H2O和O3为前驱体，首次采用原子层沉积(ALD)法制备了磷酸镧(LaPO4)薄膜。通过原位石英晶体微天平(QCM)研究了沉积过程，发现这是一个两步过程，其中水和臭氧都有助于生长。当水和臭氧同时脉冲时，效果最好。生长具有自限性，当两种前驱体的脉冲比为1:1时，可以得到化学计量的LaPO4相。所得的LaPO4薄膜在沉积时为无定形，在1350℃空气中退火10 h后结晶为单斜晶结构。在生长过程中，通过用Ca(thd)2代替La(thd)3脉冲，可以对LaPO4薄膜进行钙掺杂。得到的薄膜中，LaPO4中4.4%的镧被钙取代。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.