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Chem. Vap. Deposition (7–8–9/2014) Chem.Vap.沉积 (7-8-9/2014)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477893

引用次数: 0

Chem. Vap. Deposition (7–8–9/2014) Chem.Vap.沉积 (7-8-9/2014)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477892

引用次数: 0

Preface to the CVD Special Issue: Atomic-Scale-Engineered Materials (ASEM) CVD特刊前言:原子尺度工程材料(ASEM)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477896

Anjana Devi, W. M. M. (Erwin) Kessels

引用次数: 0

Chem. Vap. Deposition (7–8–9/2014) Chem.Vap.沉积 (7-8-9/2014)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477894

引用次数: 0

Investigation of Optical, Electrical, and Mechanical Properties of MOCVD-grown ZrO2 Films† mocvd生长ZrO2薄膜的光学、电学和力学性能研究

Chemical Vapor Deposition Pub Date : 2014-09-01 DOI: 10.1002/cvde.201407124

Van-Son Dang, Manish Banerjee, Huaizhi Zhu, Nagendra Babu Srinivasan, Harish Parala, Janine Pfetzing-Micklich, Andreas D. Wieck, Anjana Devi

{"title":"Investigation of Optical, Electrical, and Mechanical Properties of MOCVD-grown ZrO2 Films†","authors":"Van-Son Dang, Manish Banerjee, Huaizhi Zhu, Nagendra Babu Srinivasan, Harish Parala, Janine Pfetzing-Micklich, Andreas D. Wieck, Anjana Devi","doi":"10.1002/cvde.201407124","DOIUrl":"10.1002/cvde.201407124","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 Metal-organic (MO)CVD of ZrO2 thin films is performed using the precursor [Zr(NMe2)2(guan)2] (guan = η2-(iPrN)2CNMe2) as the Zr source, together with oxygen. Film deposition is carried out on both Si(100) and glass substrates at various deposition temperatures. The resulting films are characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) for investigating the crystallinity and morphology, respectively. Optical properties are measured by ellipsometry and UV-vis on Si substrates and glass substrates, respectively, showing a high average refractive index of 2.14 and transmittance of more than 80% in visible light for the film deposited at 500°C. The potential of ZrO2 thin films as gate dielectrics is verified by carrying out capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants are estimated from the accumulation capacitance, and found to be in the range 12 - 19 at an AC frequency of 1 MHz, and a leakage current of the order of 10−6 A cm−2 at the applied field of 1 to 2 MV cm−1 is measured for the films deposited at temperatures from 500 to 700°C. The low leakage current and high dielectric constant implies the good quality of the film, relevant for high-k applications. The hardness of the film ranges from 4.2 to 6.3 GPa for the 400 nm thick film, as determined by nano-indentation measurements. The optimum dielectric and hardness is found for the film deposited at 600°C, while the highest refractive index is found to be 2.14 for the film deposited at 500°C, due to higher density of the layers.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"320-327"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407124","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Focused Electron Beam-Induced CVD of Iron: a Practical Guide for Direct Writing† 聚焦电子束诱导的铁的CVD:直接写入的实用指南†

Chemical Vapor Deposition Pub Date : 2014-08-20 DOI: 10.1002/cvde.201407118

Marco Gavagnin, Heinz D. Wanzenboeck, Mostafa M. Shawrav, Domagoj Belic, Stefan Wachter, Simon Waid, Michael Stoeger–Pollach, Emmerich Bertagnolli

引用次数: 15

Electron Beam-Induced CVD of Nanoalloys for Nanoelectronics† 纳米电子学领域纳米合金的电子束诱导CVD研究

Chemical Vapor Deposition Pub Date : 2014-08-19 DOI: 10.1002/cvde.201407119

Mostafa Moonir Shawrav, Domagoj Belić, Marco Gavagnin, Stefan Wachter, Markus Schinnerl, Heinz D. Wanzenboeck, Emmerich Bertagnolli

引用次数: 16

Plasma-Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma† 等离子体辅助PtOx原子层沉积(MeCp)PtMe3和O2等离子体†

Chemical Vapor Deposition Pub Date : 2014-08-06 DOI: 10.1002/cvde.201407109

Ivo J. M. Erkens, Marcel A. Verheijen, Harm C. M. Knoops, Tatiana F. Landaluce, Fred Roozeboom, Wilhelmus M. M. Kessels

{"title":"Plasma-Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma†","authors":"Ivo J. M. Erkens, Marcel A. Verheijen, Harm C. M. Knoops, Tatiana F. Landaluce, Fred Roozeboom, Wilhelmus M. M. Kessels","doi":"10.1002/cvde.201407109","DOIUrl":"10.1002/cvde.201407109","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 Atomic layer deposition (ALD) using (MeCp)PtMe3 and O2 gas or O2 plasma is a well-established technique for the deposition of thin films of Pt, but the potential of ALD to deposit platinum oxide (PtOx) has not yet been systematically explored. This work demonstrates how PtOx can be deposited by plasma-assisted (PA)-ALD in a temperature window from room temperature (RT) to 300 °C by controlling the O2 plasma and (MeCp)PtMe3 exposure. With increasing substrate temperature, the thermal stability of PtOx decreases and the reducing activity of the precursor ligands increases. Therefore, longer O2 plasma exposures and/or lower (MeCp)PtMe3 exposures are required to obtain PtOx at higher temperatures. Furthermore, it is established that, during the nucleation stage, PtOx ALD starts by the formation of islands that grow and coalesce during the initial ∼40 cycles. Closed-layer thin films of PtOx with an O/Pt ratio of 2.5 can be deposited at 100 °C with a minimal thickness of only ∼2 nm. It is also demonstrated that a conformality of ∼90% can be reached for PtOx films in trenches with an aspect ratio of 9 when using optimized O2 plasma and precursor exposure times.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"258-268"},"PeriodicalIF":0.0,"publicationDate":"2014-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407109","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Atomic Layer Deposition of Transparent VOx Thin Films for Resistive Switching Applications† 用于电阻开关应用的透明VOx薄膜的原子层沉积

Chemical Vapor Deposition Pub Date : 2014-08-04 DOI: 10.1002/cvde.201407122

Trilok Singh, Shuangzhou Wang, Nabeel Aslam, Hehe Zhang, Susanne Hoffmann-Eifert, Sanjay Mathur

{"title":"Atomic Layer Deposition of Transparent VOx Thin Films for Resistive Switching Applications†","authors":"Trilok Singh, Shuangzhou Wang, Nabeel Aslam, Hehe Zhang, Susanne Hoffmann-Eifert, Sanjay Mathur","doi":"10.1002/cvde.201407122","DOIUrl":"10.1002/cvde.201407122","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"291-297"},"PeriodicalIF":0.0,"publicationDate":"2014-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407122","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 27

Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications† 阻性开关存储器中TiOx/Al2O3双层结构的原子层沉积

Chemical Vapor Deposition Pub Date : 2014-07-28 DOI: 10.1002/cvde.201407123

Hehe Zhang, Nabeel Aslam, Marcel Reiners, Rainer Waser, Susanne Hoffmann-Eifert

{"title":"Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications†","authors":"Hehe Zhang, Nabeel Aslam, Marcel Reiners, Rainer Waser, Susanne Hoffmann-Eifert","doi":"10.1002/cvde.201407123","DOIUrl":"10.1002/cvde.201407123","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 7-8-9","pages":"282-290"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407123","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12