Chemical Vapor Deposition最新文献_第7页

Growth and Properties of Amorphous Erbium-doped Aluminum-yttrium Oxide Films Deposited by Aerosol-UV-Assisted MOCVD 气溶胶-紫外辅助MOCVD沉积非晶掺铒铝钇氧化膜的生长和性能

Chemical Vapor Deposition Pub Date : 2014-11-24 DOI: 10.1002/cvde.201407068

Rached Salhi, Carmen Jimenez, Jean-Luc Deschanvres, Ramzi Maâlej, Mohieddine Fourati

{"title":"Growth and Properties of Amorphous Erbium-doped Aluminum-yttrium Oxide Films Deposited by Aerosol-UV-Assisted MOCVD","authors":"Rached Salhi, Carmen Jimenez, Jean-Luc Deschanvres, Ramzi Maâlej, Mohieddine Fourati","doi":"10.1002/cvde.201407068","DOIUrl":"10.1002/cvde.201407068","url":null,"abstract":"Erbium-doped yttrium-aluminum oxide films (Er:Y2O3-Al2O3) are deposited by aerosol-assisted metal-organic (AA-MO)CVD. The effects of the humidity of the carrier gas and UV assistance on their structure and optical properties during the deposition are investigated as a function of the substrate temperature and the aluminum mole fraction (Al2O3 mol.-%) in the liquid solution. The effect of substrate temperature is studied for a constant Al concentration of 33.33 mol.-% of Al-acac in the solution. The maximum deposition rates are reached under lower air humidity and with UV assistance in a surface temperature range between 350 and 460 °C. Nevertheless, as-deposited Er:Al2O3-Y2O3 films show a very low organic contamination when depositions take place under high air humidity and with UV assistance. The film composition is strongly dependent on air humidity, showing a very high aluminum content when working with a high humidity of the carrier gas, and yttrium-rich when working with a low humidity of the carrier gas. The refractive index of Er:Al2O3-Y2O3 films under these conditions is relatively high, reaching 1.76 when deposited at 460 °C. The effect of composition is studied at a substrate temperature of 410 °C. The effect on film composition when varying the aluminum mole fraction in the liquid solution is studied. The most influential parameter is the high air humidity, which induces stronger variation on the layer composition for the same liquid composition.","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407068","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Highly Photocatalytically Active Iron(III) Titanium Oxide Thin films via Aerosol-Assisted CVD† 气溶胶辅助CVD法制备高光催化活性的氧化铁(III)钛薄膜

Chemical Vapor Deposition Pub Date : 2014-11-20 DOI: 10.1002/cvde.201407143

Sanjayan Sathasivam, Davinder S. Bhachu, Yao Lu, Salem M. Bawaked, Abdullah Y. Obaid, Shaeel Al-Thabaiti, Sulaiman N. Basahel, Claire J. Carmalt, Ivan P. Parkin

{"title":"Highly Photocatalytically Active Iron(III) Titanium Oxide Thin films via Aerosol-Assisted CVD†","authors":"Sanjayan Sathasivam, Davinder S. Bhachu, Yao Lu, Salem M. Bawaked, Abdullah Y. Obaid, Shaeel Al-Thabaiti, Sulaiman N. Basahel, Claire J. Carmalt, Ivan P. Parkin","doi":"10.1002/cvde.201407143","DOIUrl":"10.1002/cvde.201407143","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>This paper presents, for the first time, the synthesis, via aerosol-assisted (AA)CVD followed by annealing at 620 °C for 5 h, of pure Fe<sub>2</sub>TiO<sub>5</sub> thin films on glass. The thin film is deposited from a one pot solution containing titanium isopropoxide and tris(acetylacetonato)iron in an ethyl acetate solvent. The film is characterized using a range of techniques including powder X-ray diffraction(XRD), wavelength dispersive X-ray (WDX) spectroscopy, X-ray photoelectron spectroscopy(XPS), scanning electron microscopy (SEM), and UV-vis spectroscopy. The photocatalytic activity of the film under UVA and visible light irradiation is also tested. The results show that Fe<sub>2</sub>TiO<sub>5</sub> is able to degrade resazurin redox dye under UVA illumination at a rate much higher than Pilkington NSG Activ<sup>TM</sup>, with a formal quantum efficiency (FQE) an order of magnitude superior.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407143","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Initiated CVD of Tertiary Amine-Containing Glycidyl Methacrylate Copolymer Thin Films for Low Temperature Aqueous Chemical Functionalization† 含叔胺甲基丙烯酸缩水甘油酯共聚物薄膜的低温水化学功能化引发CVD研究

Chemical Vapor Deposition Pub Date : 2014-10-24 DOI: 10.1002/cvde.201407129

Fatma Sarıipek, Mustafa Karaman

引用次数: 12

Coating of Alumina Fibres With Aluminium Phosphate by a Continuous Chemical Vapour Deposition Process† 连续化学气相沉积法在氧化铝纤维上涂覆磷酸铝

Chemical Vapor Deposition Pub Date : 2014-10-20 DOI: 10.1002/cvde.201407099

Sabine Stöckel, Susann Ebert, Maike Böttcher, Andreas Seifert, Thomas Wamser, Walter Krenkel, Steffen Schulze, Michael Hietschold, Helmut Gnaegi, Werner A. Goedel

引用次数: 4

A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy† 原子层沉积简史:Tuomo Suntola的原子层外延

Chemical Vapor Deposition Pub Date : 2014-10-15 DOI: 10.1002/cvde.201402012

Riikka L. Puurunen

{"title":"A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy†","authors":"Riikka L. Puurunen","doi":"10.1002/cvde.201402012","DOIUrl":"10.1002/cvde.201402012","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas-solid reactions. The principle of ALD has been discovered twice; in the 1960s under the name “molecular layering” in the Soviet Union, and in the 1970s under the name “atomic layer epitaxy” (ALE) in Finland. In 2014, it is forty years since the filing of the worldwide patent on ALE as a method for the growth of compound thin films. This essay celebrates the fortieth anniversary of ALE-ALD, briefly telling the story of ALE as shared by its Finnish inventor, Dr. Tuomo Suntola. Initially, ALE was aimed at the growth of high-quality polycrystalline ZnS thin films for electroluminescent (EL) display panels. Gradually, the material selection of ALE increased, and the application areas were extended to photovoltaics, catalysis, semiconductor devices, and beyond. Fast, production-worthy ALE reactors were imperative for industrial success. The unprejudiced creation of new technologies and products with ALE, initiated by Dr. Tuomo Suntola and led by him until early 1998, are an integral part of the Finnish industrial history, the fruits of which are seen today in numerous applications worldwide.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201402012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 163

Roll-to-Roll Atmospheric Atomic Layer Deposition of Al2O3 Thin Films on PET Substrates† PET衬底上Al2O3薄膜的卷对卷大气原子层沉积

Chemical Vapor Deposition Pub Date : 2014-10-13 DOI: 10.1002/cvde.201407126

Kamran Ali, Kyung-Hyun Choi, Nauman Malik Muhammad

{"title":"Roll-to-Roll Atmospheric Atomic Layer Deposition of Al2O3 Thin Films on PET Substrates†","authors":"Kamran Ali, Kyung-Hyun Choi, Nauman Malik Muhammad","doi":"10.1002/cvde.201407126","DOIUrl":"10.1002/cvde.201407126","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>The conventional atomic layer deposition (ALD) technologies are capable of fabricating supreme quality thin films of a wide variety of materials, but sequential introduction and purging of precursors and inert gases prevent its application in the mass production of thin films under atmospheric conditions. In this study, we introduce a novel technique of roll-to-roll atmospheric (R2R-A)ALD using a multiple-slit gas source head. Thin films of Al<sub>2</sub>O<sub>3</sub> are developed on a movable web of polyethylene terephthalate (PET) substrate at 50 °C. The Al<sub>2</sub>O<sub>3</sub> deposition is carried out under a working pressure of 740 Torr, which is very near to atmospheric pressure (760 Torr). An appreciable growth rate of 0.98 Å per cycle is observed at a carefully optimized web velocity of 7 mm s<sup>−1</sup>. Good morphological, chemical, electrical, and optical characteristics are shown by the Al<sub>2</sub>O<sub>3</sub> films produced at a large scale. Low root mean square roughness (<i>R</i><sub>q</sub>) values of 1.85 nm and 1.75 nm are recorded for the Al<sub>2</sub>O<sub>3</sub> films deposited at 50 °C over 75 and 125 ALD cycles, respectively. The appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, respectively, in the X-ray photoelectron spectroscopy (XPS) analysis confirms the fabrication of Al<sub>2</sub>O<sub>3</sub> films, which is also supported by Fourier transform infrared spectroscopy (FTIR). The films show excellent insulating properties, and optical transmittance of more than 85% is recorded in the visible region.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Designing Non-uniform Wafer Micro-topography for Macroscopic Uniformity in Multi-scale CVD Processes† 为实现多尺度CVD工艺的宏观均匀性而设计非均匀晶圆微形貌

Chemical Vapor Deposition Pub Date : 2014-10-13 DOI: 10.1002/cvde.201407087

Nikolaos Kallikounis, George Kokkoris, Nikolaos Cheimarios, Andreas G. Boudouvis

{"title":"Designing Non-uniform Wafer Micro-topography for Macroscopic Uniformity in Multi-scale CVD Processes†","authors":"Nikolaos Kallikounis, George Kokkoris, Nikolaos Cheimarios, Andreas G. Boudouvis","doi":"10.1002/cvde.201407087","DOIUrl":"10.1002/cvde.201407087","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>The potential of an additional degree of freedom (DOF) in the effort to meet film or deposition rate uniformity along the wafer in CVD processes is investigated. The investigation applies to cases of deposition on a wafer with micro-topography where the common practice is a uniform density of patterns or features (e.g., trenches or holes), with the additional DOF as the feature density along the wafer. A non-uniform density is designed with the objective of improving the uniformity; as a consequence, the differences in the profiles of the deposited films in all the features on the wafer will be compensated. A multi-scale modeling framework is utilized for the design. The case study is aluminum metal-organic (MO)CVD from dimethylethylamine alane under conditions of low macroscopic uniformity. Compared to a uniform density of the same number of trenches, the multi-scale computations predict that the designed density of features, namely trenches, induces a remarkable improvement of both the macroscopic uniformity and the number of trenches on the wafer where the uniformity exceeds 0.95. The methodology is applied to features, i.e., the simplest unit cell of topography on a wafer, even if practical implementation of the variation of feature density is difficult. The same methodology can be applied to design the density of a cluster of features comprising a single device, or a die on the wafer.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

CVD on Optical Fibers: Tilted Fiber Bragg Gratings as Real-time Sensing Platforms 光纤的CVD:倾斜光纤Bragg光栅作为实时传感平台

Chemical Vapor Deposition Pub Date : 2014-10-08 DOI: 10.1002/cvde.201400059

David J. Mandia, Wenjun Zhou, Jacques Albert, Seán T. Barry

引用次数: 7

Chem. Vap. Deposition (7–8–9/2014) Chem.Vap.沉积 (7-8-9/2014)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477895

引用次数: 0

Cover image from M. M. Shawrav, H. D. Wanzenboeck, and co-workers (Chem. Vap. Deposition 2014, 20, 251) 封面图片来自M. M. Shawrav, H. D. Wanzenboeck及其同事。Vap。沉积学报，2014,20,251)

Chemical Vapor Deposition Pub Date : 2014-09-10 DOI: 10.1002/cvde.201477891

引用次数: 0