Roll-to-Roll Atmospheric Atomic Layer Deposition of Al2O3 Thin Films on PET Substrates†

Kamran Ali, Kyung-Hyun Choi, Nauman Malik Muhammad
{"title":"Roll-to-Roll Atmospheric Atomic Layer Deposition of Al2O3 Thin Films on PET Substrates†","authors":"Kamran Ali,&nbsp;Kyung-Hyun Choi,&nbsp;Nauman Malik Muhammad","doi":"10.1002/cvde.201407126","DOIUrl":null,"url":null,"abstract":"<div>\n \n \n <section>\n \n <p>The conventional atomic layer deposition (ALD) technologies are capable of fabricating supreme quality thin films of a wide variety of materials, but sequential introduction and purging of precursors and inert gases prevent its application in the mass production of thin films under atmospheric conditions. In this study, we introduce a novel technique of roll-to-roll atmospheric (R2R-A)ALD using a multiple-slit gas source head. Thin films of Al<sub>2</sub>O<sub>3</sub> are developed on a movable web of polyethylene terephthalate (PET) substrate at 50 °C. The Al<sub>2</sub>O<sub>3</sub> deposition is carried out under a working pressure of 740 Torr, which is very near to atmospheric pressure (760 Torr). An appreciable growth rate of 0.98 Å per cycle is observed at a carefully optimized web velocity of 7 mm s<sup>−1</sup>. Good morphological, chemical, electrical, and optical characteristics are shown by the Al<sub>2</sub>O<sub>3</sub> films produced at a large scale. Low root mean square roughness (<i>R</i><sub>q</sub>) values of 1.85 nm and 1.75 nm are recorded for the Al<sub>2</sub>O<sub>3</sub> films deposited at 50 °C over 75 and 125 ALD cycles, respectively. The appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, respectively, in the X-ray photoelectron spectroscopy (XPS) analysis confirms the fabrication of Al<sub>2</sub>O<sub>3</sub> films, which is also supported by Fourier transform infrared spectroscopy (FTIR). The films show excellent insulating properties, and optical transmittance of more than 85% is recorded in the visible region.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 10-11-12","pages":"380-387"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407126","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

Abstract

The conventional atomic layer deposition (ALD) technologies are capable of fabricating supreme quality thin films of a wide variety of materials, but sequential introduction and purging of precursors and inert gases prevent its application in the mass production of thin films under atmospheric conditions. In this study, we introduce a novel technique of roll-to-roll atmospheric (R2R-A)ALD using a multiple-slit gas source head. Thin films of Al2O3 are developed on a movable web of polyethylene terephthalate (PET) substrate at 50 °C. The Al2O3 deposition is carried out under a working pressure of 740 Torr, which is very near to atmospheric pressure (760 Torr). An appreciable growth rate of 0.98 Å per cycle is observed at a carefully optimized web velocity of 7 mm s−1. Good morphological, chemical, electrical, and optical characteristics are shown by the Al2O3 films produced at a large scale. Low root mean square roughness (Rq) values of 1.85 nm and 1.75 nm are recorded for the Al2O3 films deposited at 50 °C over 75 and 125 ALD cycles, respectively. The appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, respectively, in the X-ray photoelectron spectroscopy (XPS) analysis confirms the fabrication of Al2O3 films, which is also supported by Fourier transform infrared spectroscopy (FTIR). The films show excellent insulating properties, and optical transmittance of more than 85% is recorded in the visible region.

PET衬底上Al2O3薄膜的卷对卷大气原子层沉积
传统的原子层沉积(ALD)技术能够制造各种材料的高质量薄膜,但前驱体和惰性气体的连续引入和净化阻碍了其在大气条件下大规模生产薄膜的应用。在这项研究中,我们介绍了一种使用多缝气源头的卷对卷大气(R2R-A)ALD的新技术。在50°C下,在聚对苯二甲酸乙二醇酯(PET)衬底的可移动网上形成了Al2O3薄膜。Al2O3沉积是在740 Torr的工作压力下进行的,该工作压力非常接近大气压(760 Torr)。在精心优化的7 mm s−1的腹板速度下,观察到每周期0.98 Å的明显生长速率。大规模制备的氧化铝薄膜具有良好的形态、化学、电学和光学特性。在50°C条件下,经过75次和125次ALD循环沉积的Al2O3薄膜的Rq值分别为1.85 nm和1.75 nm。在x射线光电子能谱(XPS)分析中,Al 2p, Al 2s和O 1s分别在74 eV, 119 eV和531 eV的结合能处出现,证实了Al2O3薄膜的制备,傅里叶变换红外光谱(FTIR)也证实了这一点。该薄膜具有优异的绝缘性能,在可见光区域的透光率超过85%。
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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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