A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy†

Riikka L. Puurunen
{"title":"A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy†","authors":"Riikka L. Puurunen","doi":"10.1002/cvde.201402012","DOIUrl":null,"url":null,"abstract":"<div>\n \n \n <section>\n \n <p>Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas-solid reactions. The principle of ALD has been discovered twice; in the 1960s under the name “molecular layering” in the Soviet Union, and in the 1970s under the name “atomic layer epitaxy” (ALE) in Finland. In 2014, it is forty years since the filing of the worldwide patent on ALE as a method for the growth of compound thin films. This essay celebrates the fortieth anniversary of ALE-ALD, briefly telling the story of ALE as shared by its Finnish inventor, Dr. Tuomo Suntola. Initially, ALE was aimed at the growth of high-quality polycrystalline ZnS thin films for electroluminescent (EL) display panels. Gradually, the material selection of ALE increased, and the application areas were extended to photovoltaics, catalysis, semiconductor devices, and beyond. Fast, production-worthy ALE reactors were imperative for industrial success. The unprejudiced creation of new technologies and products with ALE, initiated by Dr. Tuomo Suntola and led by him until early 1998, are an integral part of the Finnish industrial history, the fruits of which are seen today in numerous applications worldwide.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201402012","citationCount":"163","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201402012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 163

Abstract

Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas-solid reactions. The principle of ALD has been discovered twice; in the 1960s under the name “molecular layering” in the Soviet Union, and in the 1970s under the name “atomic layer epitaxy” (ALE) in Finland. In 2014, it is forty years since the filing of the worldwide patent on ALE as a method for the growth of compound thin films. This essay celebrates the fortieth anniversary of ALE-ALD, briefly telling the story of ALE as shared by its Finnish inventor, Dr. Tuomo Suntola. Initially, ALE was aimed at the growth of high-quality polycrystalline ZnS thin films for electroluminescent (EL) display panels. Gradually, the material selection of ALE increased, and the application areas were extended to photovoltaics, catalysis, semiconductor devices, and beyond. Fast, production-worthy ALE reactors were imperative for industrial success. The unprejudiced creation of new technologies and products with ALE, initiated by Dr. Tuomo Suntola and led by him until early 1998, are an integral part of the Finnish industrial history, the fruits of which are seen today in numerous applications worldwide.

Abstract Image

原子层沉积简史:Tuomo Suntola的原子层外延
原子层沉积(ALD)是一种基于重复使用分离的饱和气固反应的薄膜生长技术。ALD的原理已被发现两次;20世纪60年代在苏联以“分子分层”命名,70年代在芬兰以“原子层外延”(ALE)命名。2014年,ALE作为复合薄膜生长方法的全球专利申请已经过去了40年。这篇文章庆祝ALE- ald四十周年,简要地讲述ALE的故事,作为它的芬兰发明者,托莫·孙托拉博士分享。最初,ALE旨在为电致发光(EL)显示面板生长高质量的多晶ZnS薄膜。逐渐地,ALE的材料选择增加,应用领域扩展到光伏、催化、半导体器件等。快速、具有生产价值的ALE反应器是工业成功的必要条件。由Tuomo Suntola博士发起并由他领导直到1998年初的ALE无偏见地创造新技术和产品是芬兰工业历史的一个组成部分,其成果今天在世界各地的许多应用中都可以看到。
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来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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