Chemical Vapor Deposition最新文献_第6页

Aerosol-Assisted CVD of Bismuth Vanadate Thin Films and Their Photoelectrochemical Properties† 气溶胶辅助钒酸铋薄膜的CVD及其光电化学性质

Chemical Vapor Deposition Pub Date : 2015-01-07 DOI: 10.1002/cvde.201407142

Paul Brack, Jagdeep S. Sagu, T. A. Nirmal Peiris, Andrew McInnes, Mauro Senili, K. G. Upul Wijayantha, Frank Marken, Elena Selli

引用次数: 51

3D CFD Simulations: Effect of Operation Parameters on the Deposition of Photocatalytic TiO2 Nanoparticles by MOCVD 三维CFD模拟:操作参数对MOCVD沉积光催化TiO2纳米粒子的影响

Chemical Vapor Deposition Pub Date : 2015-01-07 DOI: 10.1002/cvde.201407127

Siti Hajar Othman, Suraya Abdul Rashid, Tinia Idaty Mohd. Ghazi, Norhafizah Abdullah

引用次数: 1

An Investigation into, and Improvement of, the Non-uniformity of the Flow Field caused by the Pumping Effect in a Stagnation Flow CVD Reactor 滞流CVD反应器中泵送效应引起的流场不均匀性的研究与改进

Chemical Vapor Deposition Pub Date : 2015-01-02 DOI: 10.1002/cvde.201407141

Mei-Jiau Huang, Chien-Chou Weng

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引用次数: 2

Growth of a Carbon Micro- and Nanocoils Mixture using NiSO4 as the Catalyst Precursor 以NiSO4为催化剂前驱体生长碳微纳米线圈混合物

Chemical Vapor Deposition Pub Date : 2015-01-02 DOI: 10.1002/cvde.201407144

Ruixue Cui, Dawei Li, Xin Fu, Muhammad Asif, Lujun Pan

引用次数: 5

Deposition of Iridium Thin Films on Three-Dimensional Structures With PE-MOCVD 用PE-MOCVD在三维结构上沉积铱薄膜

Chemical Vapor Deposition Pub Date : 2015-01-02 DOI: 10.1002/cvde.201407133

Chia-Pin Yeh, Marco Lisker, Jürgen Bläsing, Oleksandr Khorkhordin, Bodo Kalkofen, Edmund P. Burte

引用次数: 5

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane** 三氯硅烷在玻璃上沉积掺杂多晶硅薄膜**

Chemical Vapor Deposition Pub Date : 2015-01-02 DOI: 10.1002/cvde.201407139

Ariel G. Benvenuto, Román H. Buitrago, Javier A. Schmidt

{"title":"Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**","authors":"Ariel G. Benvenuto, Román H. Buitrago, Javier A. Schmidt","doi":"10.1002/cvde.201407139","DOIUrl":"10.1002/cvde.201407139","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Atmospheric pressure (AP) thermal CVD is used to deposit thin poly-Si films on glass substrates. Also produced are heterojunction solar cells carrying out the deposition on c-Si wafers. A batch-type hot-wall reactor, employing SiHCl<sub>3</sub> as a precursor, H<sub>2</sub> as a carrier and reaction gas, BBr<sub>3</sub> as a <i>p</i>-type doping agent, and PCl<sub>3</sub> as a <i>n</i>-type doping agent, is used. The films obtained are homogeneous and well-adhered to the substrate. Samples are structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), reflectance spectroscopy in the UV-vis region, X-ray diffraction (XRD), and Raman spectroscopy (RS). The electrical characterization includes conductivity measurements as a function of temperature, and Hall effect measurements. For the <i>p</i>-doped samples, XRD reveals a strong (220) preferential orientation of the films, while the <i>n</i>-doped samples lack columnar structure or preferential orientation. RS and UV-reflectance confirm a high crystalline fraction. Dark conductivity measurements as a function of temperature show that the films can be grown intrinsic, <i>p</i>-type or <i>n</i>-type. Activation energies between 0.61 and ∼0 eV are obtained, with reasonable values for the carrier mobilities. For the solar cells, relatively high values of <i>V</i><sub>OC</sub>(∼507 mV) and <i>J</i><sub>SC</sub> (∼29.6 mA cm<sup>−2</sup>) are measured. In conclusion, these results demonstrate the feasibility of directly depositing doped poly-Si thin films on glass and c-Si substrates at intermediate temperatures, with interesting characteristics for photovoltaic applications.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 1-2-3","pages":"54-62"},"PeriodicalIF":0.0,"publicationDate":"2015-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407139","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51321851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors** 氮化镓/氮化镓高电子迁移率晶体管的势垒应变和碳掺入工程性能改进**

Chemical Vapor Deposition Pub Date : 2014-12-18 DOI: 10.1002/cvde.201407100

Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong, Edward Yi Chang

{"title":"Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**","authors":"Tien Tung Luong, Yen Teng Ho, Binh Tinh Tran, Yuen Yee Woong, Edward Yi Chang","doi":"10.1002/cvde.201407100","DOIUrl":"10.1002/cvde.201407100","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>The improvements in electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) grown using metal-organic (MO)CVD by engineering structure, barrier strain, and unintentional carbon incorporation, are demonstrated in this work. Both normal HEMT structure (with a high temperature (HT) AlN buffer) and advanced HEMT structure (with a high-low-high temperature (HLHT) AlN buffer, and a HT AlN interlayer (IL)) present a breakdown voltage higher than 200 V, while a much smaller breakdown voltage of 17 V is measured on the conventional structure using a low-temperature GaN buffer. The HT AlN IL inserted in the middle of the conventional HEMT structure introduces a reduction in the tension of the AlGaN barrier, which results in an improvement of the surface morphology (0.46 nm). As a consequence, the two-dimensional electron gas (2DEG) mobility increases by remarkable 46% (1900 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>). The HLHT AlN buffer, substituting for the HT AlN buffer, leads to the enhancement of GaN crystalline quality, which contributes to the performance improvement for HEMTs. The advanced HEMT, using both an AlN IL and an HLHT AlN buffer, produces increases in the DC maximum drain current by 35.5% (∼680 A mm<sup>−1</sup>), and in the transconductance by 15% (114 mS mm<sup>−1</sup>) in comparison with the normal HEMT with an AlN buffer. The very low leakage current in the advanced HEMTs is caused by optimizing the design of the buffer and modifying growth parameters. Lastly, the reduction of AlGaN barrier tensile strain by inserting the HT AlN IL is promising for an improvement in AlGaN/GaN HEMT reliability.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 1-2-3","pages":"33-40"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407100","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51320656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Chem. Vap. Deposition (10–11–12/2014) Chem.Vap.沉积 (10-11-12/2014)

Chemical Vapor Deposition Pub Date : 2014-12-11 DOI: 10.1002/cvde.201471013

引用次数: 0

Chem. Vap. Deposition (10–11–12/2014) Chem.Vap.沉积 (10-11-12/2014)

Chemical Vapor Deposition Pub Date : 2014-12-11 DOI: 10.1002/cvde.201471012

引用次数: 0

Cover image from Jones and co-workers (Chem. Vap. Deposition 2010, 16, 257) 封面图片来自 Jones 及其合作者（Chem.）

Chemical Vapor Deposition Pub Date : 2014-12-11 DOI: 10.1002/cvde.201471011

引用次数: 0