Aerosol-Assisted CVD of Bismuth Vanadate Thin Films and Their Photoelectrochemical Properties†

Chemical Vapor Deposition Pub Date : 2015-01-07 DOI:10.1002/cvde.201407142

Paul Brack, Jagdeep S. Sagu, T. A. Nirmal Peiris, Andrew McInnes, Mauro Senili, K. G. Upul Wijayantha, Frank Marken, Elena Selli

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引用次数: 51

Abstract

Thin film bismuth vanadate (BiVO4) photoelectrodes are prepared by aerosol-assisted (AA)CVD for the first time on fluorine-doped tin oxide (FTO) glass substrates. The BiVO4 photoelectrodes are characterised by X-ray diffraction (XRD), Raman spectroscopy (RS), and energy-dispersive X-ray (EDX) spectroscopy and are found to consist of phase-pure monoclinic BiVO4. Scanning electron microscopy (SEM) analysis shows that the thin film is uniform with a porous structure, and consists of particles approximately 75−125 nm in diameter. The photoelectrochemical (PEC) properties of the BiVO4 photoelectrodes are studied in aqueous 1 M Na2SO4 and show photocurrent densities of 0.4 mA cm−2, and a maximum incident-photon-to-electron conversion efficiency (IPCE) of 19% at 1.23 V vs. the reversible hydrogen electrode (RHE). BiVO4 photoelectrodes prepared by this method are thus highly promising for use in PEC water-splitting cells.

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气溶胶辅助钒酸铋薄膜的CVD及其光电化学性质

首次采用气溶胶辅助(AA)气相沉积(CVD)技术在掺氟氧化锡(FTO)玻璃衬底上制备了钒酸铋(BiVO4)薄膜光电极。通过x射线衍射(XRD)，拉曼光谱(RS)和能量色散x射线(EDX)光谱对BiVO4光电极进行了表征，发现其由相纯单斜BiVO4组成。扫描电镜(SEM)分析表明，该薄膜具有均匀的多孔结构，由直径约75 ~ 125 nm的颗粒组成。在1 M Na2SO4水溶液中研究了BiVO4光电极的光电化学(PEC)性能，其光电流密度为0.4 mA cm−2，与可逆氢电极(RHE)相比，在1.23 V时入射光子到电子的最大转换效率(IPCE)为19%。因此，用这种方法制备的BiVO4光电极在PEC水分解电池中具有很高的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.