Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors†

Chemical Vapor Deposition Pub Date : 2014-07-24 DOI:10.1002/cvde.201407115

Mikko Kaipio, Timothee Blanquart, Manish Banerjee, Ke Xu, Jaakko Niinistö, Valentino Longo, Kenichiro Mizohata, Anjana Devi, Mikko Ritala, Markku Leskelä

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引用次数: 8

Abstract

In this study the atomic layer deposition (ALD) of TiO₂ and ZrO₂ using two heteroleptic amido-guanidinate precursors, [Ti(NEtMe)₃(guan-NEtMe)] and [Zr(NEtMe)₃(guan-NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self-limiting growth at a deposition temperature of 275°C. The zirconium precursor especially gives high growth rates (0.8/1.0 Å per cycle with H₂O/O₃). The films are also relatively smooth, as determined by atomic force microscopy (AFM). The composition of the films is examined using X-ray photoelectron spectroscopy (XPS) and time of flight elastic recoil detection analysis (TOF-ERDA). When using ozone as the oxygen source the films present very high purity. The results are compared and discussed with respect to earlier studies on guanidinate, as well as homoleptic amido precursors.

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杂疏胍前驱体制备TiO2和ZrO2薄膜的原子层沉积研究

在本研究中，研究了在水或臭氧作为氧源的情况下，用两种杂电性氨基胍前驱体[Ti(NEtMe)3(guan-NEtMe)]和[Zr(NEtMe)3(guan-NEtMe)]制备TiO2和ZrO2的原子层沉积(ALD)。在275°C的沉积温度下，所有的工艺都表现出自限制生长。锆前驱体的生长速率特别高(在H2O/O3条件下每循环生长0.8/1.0 Å)。根据原子力显微镜(AFM)的测定，薄膜也相对光滑。利用x射线光电子能谱(XPS)和飞行时间弹性后坐力检测分析(TOF-ERDA)对膜的组成进行了检测。当使用臭氧作为氧源时，薄膜呈现出非常高的纯度。结果比较和讨论了关于胍的早期研究，以及同眠胺前体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.