Materials Today Electronics最新文献

{"title":"Lead-free perovskites for flexible optoelectronics","authors":"Chien Cheng Li,&nbsp;Tzu Yu Huang,&nbsp;Yu Hsuan Lai,&nbsp;Yu Chuan Huang,&nbsp;Chih Shan Tan","doi":"10.1016/j.mtelec.2024.100095","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100095","url":null,"abstract":"<div><p>In modern technology, optoelectronics plays a pivotal role, finding applications in diverse areas like solar cells, light-emitting diodes (LEDs), and photodetectors. Perovskite materials, known for their exceptional optical properties, are gaining attraction due to their light weight, flexibility, and ease of production. The expanding markets of wearable electronics and flexible displays have underscored the importance of developing flexible perovskite optoelectronic devices. However, the prevalent use of lead in high-performance perovskite devices poses significant environmental and health risks, casting doubt on their commercial future. This review commences with examining lead hazards, followed by a discussion on how first-principles calculations aid in designing lead-free perovskites. We survey the synthesized lead-free perovskites and explore their properties. The focus then shifts to the latest advancements in flexible optoelectronic devices utilizing lead-free perovskites, including solar cells, LEDs, and near-infrared photodetectors. Additionally, we explore the role of TCAD (Technology Computer-Aided Design) in simulating and optimizing these devices, highlighting its impact on device design and efficiency.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400007X/pdfft?md5=9e5df612d9062465802c7722fe047cc5&pid=1-s2.0-S277294942400007X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140296453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cation doping strategy for improved carrier mobility and stability in metal-oxide Heterojunction thin-film transistors","authors":"Boyeon Park ,&nbsp;San Nam ,&nbsp;Youngjin Kang ,&nbsp;Seong-Pil Jeon ,&nbsp;Jeong-Wan Jo ,&nbsp;Sung Kyu Park ,&nbsp;Yong-Hoon Kim","doi":"10.1016/j.mtelec.2024.100090","DOIUrl":"10.1016/j.mtelec.2024.100090","url":null,"abstract":"<div><p>The heterojunction channel architecture has emerged as a viable solution to enhance the performance of metal-oxide thin-film transistors (TFTs), addressing the performance limitations of single-channel counterparts. However, carrier mobility enhancement through a channel thickness design often encounters significant challenges such as the negative threshold voltage (V_th) shift. In this study, we present a cation doping strategy, designed to regulate V_th shift while simultaneously boosting carrier mobility in zinc-tin-oxide (ZTO)-based heterojunction TFTs. A comprehensive investigation of ZTO-based semiconductors was conducted to explore the impact of cation doping on the energy band structure and to find an optimal heterojunction channel structure for high carrier mobility and stability. The resulting ZTO/Ti-doped ZTO (Ti:ZTO) heterojunction TFTs demonstrated a field-effect mobility of 39.7 cm²/Vs, surpassing the performance of ZTO TFTs (16.1 cm²/Vs), with a minimal change in the V_th. Furthermore, the ZTO/Ti:ZTO TFTs exhibited enhanced bias-stress stability compared to the ZTO TFTs. We attribute the improved mobility and stability to the electron accumulation near the oxide channel heterointerface facilitated by band bending and defect passivation effect arising from the Ti:ZTO back-channel layer, respectively.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000020/pdfft?md5=15f60ff0a0662214a0774d76a56e938b&pid=1-s2.0-S2772949424000020-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140271302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si","authors":"Asraful Haque,&nbsp;Suman Kumar Mandal,&nbsp;Antony Jeyaseelan,&nbsp;Sandeep Vura,&nbsp;Pavan Nukala,&nbsp;Srinivasan Raghavan","doi":"10.1016/j.mtelec.2024.100091","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100091","url":null,"abstract":"<div><p>Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr₃Al₂O₆ (SAO), at the interface and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO₃ (SVO) as a sacrificial buffer layer. We then exploit the well-known enhancement of liquid diffusivities by monolayer graphene to enhance the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid- graphene-SVO- template by growing ferroelectric BaTiO₃ (BTO) via PLD and Pb(Zr, Ti)O₃ (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000032/pdfft?md5=c2a1c2f28f881120c69c5cb5f4cde82c&pid=1-s2.0-S2772949424000032-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140180499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review on recent advances in anode materials in lithium ion batteries","authors":"Ashish Kumar Mishra,&nbsp;Monika,&nbsp;Balbir Singh Patial","doi":"10.1016/j.mtelec.2024.100089","DOIUrl":"10.1016/j.mtelec.2024.100089","url":null,"abstract":"<div><p>The immediate compelling demand of eco-friendly and portable energy sources for various applications is increasing day by day as the world is moving towards faster technological advancements and industrial revolution. We are surrounded by many gadgets of daily usage which are either needed energy to run them continuously or something to store the energy to make it portable for later use. The invention of battery and continuous research in this field to enhance the electrochemical performance of the existing battery chemistries are hot topics for researchers. Li-ion batteries stood out as the most reliable and suitable device for storing energy. These have applications from small scale such as mobile phone to bigger applications like electric vehicles. Highest theoretical capacity, lightweight, high energy density and many other parameters of Li metal anodes make them attractive choice for the applications which shows lowest electrochemical potential of <span><math><mrow><mo>−</mo><mn>3</mn><mo>.</mo><mn>04</mn><mspace></mspace><mi>V</mi></mrow></math></span> versus standard hydrogen electrode. Storage of more energy, occupying less space and able to deliver better cyclic and rate capability are some prerequisites for the advanced batteries before their usage in bigger applications. Researchers are now trying to find the alternate materials for cathode and anode. The different structural cathode materials are being tested and various anode chemistries have been tried. Silicon additive anodes have the potential to replace the regular graphite anode material because of 10 times larger specific capacity. This paper reviews the anode materials which are currently under research to enhance the performance of Li-ion battery in comparison with the currently commercialized graphite anode. The anode materials reviewed in this paper are categorized based on Li-insertion mechanism as intercalation, alloys, conversion and MOF. The synthesis methods and electrochemical performance are reported and discussed. A comparative study with other metal-ions and metal-air battery is also put forward to make an idea about the efficiency of the material along with the various challenges and future perspective in the development of the anode materials in Li-ion batteries.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000019/pdfft?md5=f1e00bf265fb44757878fa005a4aa7e3&pid=1-s2.0-S2772949424000019-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139631748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable bioelectronics fabrication through photo-induced swelling of green hydrogels","authors":"Sachin Agate,&nbsp;Lucian Lucia,&nbsp;Lokendra Pal","doi":"10.1016/j.mtelec.2023.100088","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100088","url":null,"abstract":"<div><p>Electrical circuit manufacture for flexible electronics is a very specialized printing process in which electrically functional inks are printed onto a substrate. In almost all cases, the substrate assumes a passive role in ink distribution, which has been the conventional methodology used up until now. Herein we have discovered that a sodium carboxymethyl cellulose (CMC<img>Na) hydrogel substrate demonstrates heightened susceptibility to UV photo-irradiating and because of molecular-level bond lability that leads to a macroscopic improved swelling (“writing” action). The localized photo-activated events lead to temporary 3D contours on the hydrogel substrate where conductive ink is held in valleys to allow the formation of conductive traces. A self-distribution of ink in the valleys is achieved which, moreover, is a type of mask-based photolithography or digital image generation. The process can be employed for polymeric inks such as PEDOT:PSS to obtain ink patterns without need of complex inkjet printers or other conventional printers. The drying causes recession of the temporary swollen hydrogel contours and returns the surface to flattened format. The process works at lower ink solids of 0.125 % and has shown that 1.15 J/mm² of UV energy is capable of creating an electrically isolated conductive pattern. Initial water content of the system plays an important role in which 20 g/g of absorbed water/substrate is sufficient for acceptable pattern generation.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000645/pdfft?md5=09370beb9886da766ca94586c7946db1&pid=1-s2.0-S2772949423000645-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139100355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The outlook of flexible DBD-plasma devices: Applications in food science and wound care solutions","authors":"Thu Minh Nguyen ,&nbsp;Neha Kaushik ,&nbsp;Tung Thanh Nguyen ,&nbsp;Eun Ha Choi ,&nbsp;Linh Nhat Nguyen ,&nbsp;Nagendra Kumar Kaushik","doi":"10.1016/j.mtelec.2023.100087","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100087","url":null,"abstract":"<div><p>Flexible dielectric barrier discharge (FXDBD) plasma devices have received extensive attention for the surface treatment of larger areas, nonflat surfaces, or curved objects. The rapid development of flexible electronics technology allows unrestricted versatility for designing and manufacturing FXDBD devices. The flexible structure of FXDBD plasma opens new possibilities that cannot be effectively achieved by conventional rigid-body plasma systems, particularly in treating complex surface structures in biological targets. Over the last decade, FXDBD plasma devices have been broadly utilized for surface sterilization, wound solutions, and food processing applications. This review provides a comprehensive overview of current advances in FXDBD plasma, considering important aspects of manufacturing processes and critical application accomplishments. The challenges and perspectives for the future development of FXDBD plasma are also discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000633/pdfft?md5=b44bccc62808a4e142a81e38467b7f7d&pid=1-s2.0-S2772949423000633-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139100356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in perovskite/Cu(In,Ga)Se2 tandem solar cells","authors":"Yuchen Xiong ,&nbsp;Zijun Yi ,&nbsp;Wenguang Zhang ,&nbsp;Yihuai Huang ,&nbsp;Zhihong Zhang ,&nbsp;Qinghui Jiang ,&nbsp;Xin Ren Ng ,&nbsp;Guibin Shen ,&nbsp;Yubo Luo ,&nbsp;Xin Li ,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2023.100086","DOIUrl":"10.1016/j.mtelec.2023.100086","url":null,"abstract":"<div><p>Tandem solar cells (TSCs) are poised to revolutionize photovoltaic (PV) technology as they hold the promise of a significantly higher power conversion efficiency (PCE) compared to the current dominant single-junction solar cells. TSCs are composed of two different absorbing materials, strategically utilizing the shared incident solar spectrum to achieve a synergistic boost in PCE. The perovskite/Cu(In,Ga)Se₂ (CIGS) TSCs, as a cutting-edge and prospective solar energy conversion device, have sparked widespread research interest by synergistically combining the unique advantages of perovskite and CIGS materials. This comprehensive review presents a thorough investigation of the latest research advancements in perovskite/CIGS TSCs, with a specific focus on the intricacies of device structure design and state-of-the-art fabrication methods. Significant attention is devoted to elucidating the pivotal role of interface engineering, material composition optimization, and precise control of processing parameters in determining the PV performance of the devices. By optimizing the stacked architecture and enhancing material interfaces, the review demonstrates how substantial improvements have been achieved in terms of high-efficiency PV conversion and superior carrier transport, consequently elevating the performance and long-term device stability. Finally, the review provides a compelling outlook on the future development of perovskite/CIGS TSCs, aiming to drive further advancements and practical applications of this advanced technology.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000621/pdfft?md5=2b0d2601130da2733c90d67d6692a157&pid=1-s2.0-S2772949423000621-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139018165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2D ferroelectric materials: Emerging paradigms for next-generation ferroelectronics","authors":"Weijun Wang ,&nbsp;You Meng ,&nbsp;Wei Wang ,&nbsp;Yuxuan Zhang ,&nbsp;Bowen Li ,&nbsp;Yan Yan ,&nbsp;Boxiang Gao ,&nbsp;Johnny C. Ho","doi":"10.1016/j.mtelec.2023.100080","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100080","url":null,"abstract":"<div><p>Ferroelectric materials with electrically switchable spontaneous polarization are technologically important for developing next-generation low-power nanoelectronics and ferroelectronics. Regardless of significant challenges for rich functionalities owing to the insulating nature of conventional thin-film ferroelectrics, ferroelectricity instability or disappearance below a critical thickness limit generally exists. Therefore, exploring emerging two-dimensional (2D) ferroelectric materials with nanoscale dimensions and moderate bandgaps is crucial for developing high-integration functional nanoelectronics. This review offers a comprehensive analysis of the historical background and progression in both thin-film ferroelectrics and novel 2D ferroelectrics. Special attention is given to the device applications based on the emerging 2D ferroelectrics, in which the polarization switching process occurs within the channel material itself. Leveraging the switchable polarization in nanoscale 2D ferroelectrics, rationally designed device configurations with intriguing working mechanisms have been rapidly developed in various application scenarios, such as gate-tunable memristors, non-volatile memories, biological synapses, in-memory computing, etc. This review also sheds light on the potential opportunities and challenges in the future advancement of integrating novel 2D ferroelectric materials into devices within commercial electronic circuits.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000566/pdfft?md5=b737cea17bfb1c015ad8b359a95eeddc&pid=1-s2.0-S2772949423000566-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138466414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bendable & twistable oxide-polymer based hybrid electrochromic device: Flexible and multi-wavelength color modulation","authors":"Bhumika Sahu ,&nbsp;Love Bansal ,&nbsp;Deb Kumar Rath ,&nbsp;Suchita Kandpal ,&nbsp;Tanushree Ghosh ,&nbsp;Nikita Ahlawat ,&nbsp;Chanchal Rani ,&nbsp;Maxim Yu Maximov ,&nbsp;Rajesh Kumar","doi":"10.1016/j.mtelec.2023.100082","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100082","url":null,"abstract":"<div><p>Flexible electrochromic (EC) technology has made huge progress in electronic industry for their applications in flexible displays, e-papers, e-curtains etc. The performance of device is the main concern while fabricating a flexible electrochromic device. In this paper, a solid state flexible electrochromic device (flex-ECD) has been demonstrated by combining the excellent EC performance of organic polymer and excellent stability of metal oxides which exhibits fast color switching and excellent stability after bending and twisting it for several times. For the fabrication of device, first Co₃O₄ and WO₃ powders have been synthesised and utilised as dopants in the two electrochromic active materials namely polythiophene (P3HT) and ethyl viologen (EV), respectively. Due to the doping of these nanomaterials the performance of the flex-ECD has been enhanced as measured in terms of coloration efficiency, switching time and stability. Additionally, the device shows color switching in their different wavelength regions between visible and NIR. The flex-ECD shows high stability with a few seconds of switching time and high coloration efficiency of 420 cm²/C. The device was first bent and subsequently twisted for several more times. After bending, the performance has been checked, exhibiting minimal change in switching time at 515 nm and 665 nm without compromising the coloration efficiency much. The device shows excellent stability after bending and twisting moments making it a good design for future wearable electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942300058X/pdfft?md5=08326e62a4acf288a441e6e23282c29b&pid=1-s2.0-S277294942300058X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138548980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compositional engineering of magnetic anisotropy in Cr2SixGe2-xTe6","authors":"Ti Xie ,&nbsp;Shanchuan Liang ,&nbsp;Samuel Deitemyer ,&nbsp;Qinqin Wang ,&nbsp;Tong Zhou ,&nbsp;Igor Žutić ,&nbsp;Xixiang Zhang ,&nbsp;Dongsheng Yuan ,&nbsp;Xiang Zhang ,&nbsp;Cheng Gong","doi":"10.1016/j.mtelec.2023.100081","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100081","url":null,"abstract":"<div><p>Magnetic van der Waals (vdW) materials are highly sensitive to their chemical compositions and atomic structures, which presents rich opportunities for synthetic control of vdW ferromagnets. Here, we synthesized the quaternary alloys Cr₂Si<em>_x</em>Ge_2-<em>_x</em>Te₆ using the flux method and discovered that the Ge:Si source ratio should be designed deliberately higher than the expected in resultant crystals due to the stronger affinity of Si than Ge to be involved in Cr₂Si<em>_x</em>Ge_2-<em>_x</em>Te₆ reactions. Temperature-dependent magnetization and magnetic hysteresis measurements revealed that as the Si content increases, the Curie temperature decreases while the out-of-plane anisotropy increases monotonically. When <em>x</em> increases from 0 to 2 in Cr₂Si<em>_x</em>Ge_2-<em>_x</em>Te₆, the out-of-plane saturation fields remain approximately unchanged at ∼0.2 T, while the in-plane saturation fields increase monotonically from 0.5 T to 1.2 T. The distinct behaviors between out-of-plane and in-plane saturation fields arise from the different mechanisms underpinning the two fields – the out-of-plane saturation field is determined by the competition of exchange interaction, magnetic anisotropy, and dipolar interaction, whereas the in-plane saturation field by magnetic anisotropy. Our compositional engineering provides a fundamental understanding of the layered magnetic materials and insightful guidance for the future design of vdW magnets.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000578/pdfft?md5=9916b5c3d26e737c4d314ddfa3e91aa0&pid=1-s2.0-S2772949423000578-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138839238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}