Materials Today Electronics最新文献

{"title":"A review of common materials for hybrid quantum magnonics","authors":"Xufeng Zhang","doi":"10.1016/j.mtelec.2023.100044","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100044","url":null,"abstract":"<div><p>Hybrid magnonics is an emerging research area focusing on various types of interactions between magnons (quantized collective spin excitations) and other information carriers, which has found broad practical applications ranging from high-precision magnetometry and thermometry to quantum transduction and neuromorphic computing. In this paper we review different types of hybrid magnonic devices, and the materials that are commonly used in each device type. We also discuss recent trends in the exploration of new materials and interaction mechanisms, and future research challenges and opportunities.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100044"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"PEDOT:PSS-based electrochromic materials for flexible and stretchable devices","authors":"Zhiqi Wang ,&nbsp;Ruiyuan Liu","doi":"10.1016/j.mtelec.2023.100036","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100036","url":null,"abstract":"<div><p>PEDOT:PSS-based smart electrochromic materials shows fast, real-time and efficient reversible color change due to redox process under influence of electric field. The color changes can directly carry readable visual information by the naked human eyes, showing promising applications in smart display, health monitoring, and energy storage. In this perspective, we summarize the recent progress of PEDOT:PSS-based electrochromic materials and their applications in wearable devices. We start with the electrochromic mechanism, synthesis and properties of various PEDOT:PSS complexes. Flexible and stretchable electrochromic devices, as well as their typical applications are then explored. Finally, we provide an overview of the current challenges and future perspectives for the development of advanced materials engineering and devices application.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100036"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"0D-2D heterostructure for making very large quantum registers using ‘itinerant’ Bose-Einstein condensate of excitons","authors":"Amit Bhunia ,&nbsp;Mohit Kumar Singh ,&nbsp;Maryam Al Huwayz ,&nbsp;Mohamed Henini ,&nbsp;Shouvik Datta","doi":"10.1016/j.mtelec.2023.100039","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100039","url":null,"abstract":"<div><p>Presence of coherent ‘resonant’ tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure definitely requires momentum space narrowing of charge carriers inside the quantum well and that of associated indirect excitons, which indicates bias dependent ‘itinerant’ Bose-Einstein condensation of excitons. Observation of periodic variations in negative quantum capacitance points to in-plane coulomb correlations mediated by long range spatial ordering of indirect, dipolar excitons. Enhanced contrast of quantum interference beats of excitonic polarization waves even under white light and observed Rabi oscillations over a macroscopically large area also support the presence of density driven excitonic condensation having long range order. Periodic presence (absence) of splitting of excitonic peaks in photocapacitance spectra even demonstrate collective coupling (decoupling) between energy levels of the quantum well and quantum dots with applied biases, which can potentially be used for quantum gate operations. All these observations point to experimental control of macroscopically large, quantum state of a two-component Bose-Einstein condensate of excitons in this quantum dot - quantum well heterostructure. Therefore, in principle, millions of two-level excitonic qubits can be intertwined to fabricate large quantum registers using such hybrid heterostructure by controlling the local electric fields and also by varying photoexcitation intensities of overlapping light spots.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100039"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonequilibrium quantum transport properties of tetragonal zinc chalcogenide monolayers","authors":"Yaoyun Zhu ,&nbsp;Shuang Meng ,&nbsp;Jia Zhou","doi":"10.1016/j.mtelec.2023.100041","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100041","url":null,"abstract":"<div><p>Tetragonal zinc chalcogenide monolayers (TZCM) are emerging as interesting electronic materials with a direct band gap and relatively high carrier mobility. In this work, we report a theoretical investigation of electronic transport properties and photoelectric response properties of TZCM with gold contacts by density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. When there is no gate voltage applied, the current increases nonlinearly as bias voltage increases. Among the four proposed devices, the Au(100)/ZnS/Au(100) device has the best electronic transport performance and is most sensitive to the adjustment of bias voltage and gate voltage. The photocurrent calculation results indicate that the low-frequency oscillatory photocurrent of the Au(100)/ZnSe/Au(100) device in the high photon energy region may have potential applications in ultraviolet light-emitting diodes. The Au(100)/Zn₂SeS/Au(100) device has more stable photoelectric response and polarization sensitivity than the Au(100)/Zn₂SSe/Au(100) device. The Au(100)/TZCM/Au(100) devices exhibit considerable photocurrent and good extinction ratios. This work could pave the way for the future application of TZCM in the field of optoelectronics and so on.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100041"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetization switching in van der Waals systems by spin-orbit torque","authors":"Xin Lin ,&nbsp;Lijun Zhu","doi":"10.1016/j.mtelec.2023.100037","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100037","url":null,"abstract":"<div><p>Electrical switching of magnetization via spin-orbit torque is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate switching of perpendicular magnetization in van der Waals systems that have unique, strong tunability and spin-orbit coupling effect compared to conventional metals. In this review, we first give a brief, generalized introduction to the spin-orbit torque and van der Waals materials. We will then discuss the recent advances in magnetization switching by the spin current generated from van der Waals materials and summary the progress in the switching of van der Waals magnetization by the spin-orbit torque.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100037"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stable Hybrid Perovskite Materials for Photovoltaics Under Real-World Conditions","authors":"","doi":"10.1016/j.mtelec.2023.100038","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100038","url":null,"abstract":"","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100038"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cross-shape reconfigurable field effect transistor for flexible signal routing","authors":"Cigdem Cakirlar ,&nbsp;Maik Simon ,&nbsp;Giulio Galderisi ,&nbsp;Ian O'Connor ,&nbsp;Thomas Mikolajick ,&nbsp;Jens Trommer","doi":"10.1016/j.mtelec.2023.100040","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100040","url":null,"abstract":"<div><p>Reconfigurable field effect transistors are one of the most promising emerging device concepts for future computing systems, due to their dynamic p- and n-channel behavior. Over the past decade, there have been significant advances on electrical characteristics and circuit designs, but there are still many additional options to explore. In this letter, a disruptive common-channel reconfigurable filed effect transistor concept is presented experimentally for the first time. A cross-shape integrated nanowire structure is fabricated on a silicon-on-insulator wafer using top-down methods for higher reproducibility. The fabricated cross-shape reconfigurable field effect transistor is composed of a doping-free common channel with four independent silicided source and drain junctions, a silicon dioxide dielectric layer and four independent gates aligned on top of the silicide junctions. By assembling this unique common-channel structure, device level current routing was provided. A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor characteristics for each branch, which enables new complementary circuit designs to be introduced. We demonstrated an inverter and a multiplexer circuit both built from the same two transistors with enhanced functionality when compared to a single source configuration.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100040"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tactile perception in hydrogel-based robotic skins using data-driven electrical impedance tomography","authors":"David Hardman ,&nbsp;Thomas George Thuruthel ,&nbsp;Fumiya Iida","doi":"10.1016/j.mtelec.2023.100032","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100032","url":null,"abstract":"<div><p>Combining functional soft materials with electrical impedance tomography is a promising method for developing continuum sensorized soft robotic skins with high resolutions. However, reconstructing the tactile stimuli from surface electrode measurements is a challenging ill-posed modelling problem, with FEM and analytic models facing a reality gap. To counter this, we propose and demonstrate a model-free superposition method which uses small amounts of real-world data to develop deformation maps of a soft robotic skin made from a self-healing ionically conductive hydrogel, the properties of which are affected by temperature, humidity, and damage. We demonstrate how this method outperforms a traditional neural network for small datasets, obtaining an average resolution of 12.1 mm over a 170 mm circular skin. Additionally, we explore how this resolution varies over a series of 15,000 consecutive presses, during which damages are continuously propagated. Finally, we demonstrate applications for functional robotic skins: damage detection/localization, environmental monitoring, and multi-touch recognition - all using the same sensing material.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100032"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes","authors":"Abdulaziz Almalki ,&nbsp;Labed Madani ,&nbsp;Nouredine Sengouga ,&nbsp;Sultan Alhassan ,&nbsp;Saud Alotaibi ,&nbsp;Amra Alhassni ,&nbsp;Amjad Almunyif ,&nbsp;Jasbinder S. Chauhan ,&nbsp;Mohamed Henini ,&nbsp;Helder Vinicius Avanço Galeti ,&nbsp;Yara Galvão Gobato ,&nbsp;Marcio Peron Franco de Godoy ,&nbsp;Marcelo B. Andrade ,&nbsp;Sérgio Souto ,&nbsp;Hong Zhou ,&nbsp;Boyan Wang ,&nbsp;Ming Xiao ,&nbsp;Yuan Qin ,&nbsp;Yuhao Zhang","doi":"10.1016/j.mtelec.2023.100042","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100042","url":null,"abstract":"<div><p>In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga₂O₃ heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga₂O₃ and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (V_Ga + V_O) in the annealed β-Ga₂O₃ samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E₂ trap (E_c-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 10¹⁹ cm⁻³ and E₂ trap depth into the surface of β-Ga₂O₃ layer of about 0.220 µm and the effect of the most observed E_c-0.75 eV trap level in β-Ga₂O₃. These results unveil comprehensive physics in NiO/β-<span><math><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub><mspace></mspace></mrow></math></span>heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-<span><math><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub><mspace></mspace></mrow></math></span>devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100042"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From fundamentals to applications: The development of magnetoplasmonics for next-generation technologies","authors":"Rahulkumar Sunil Singh,&nbsp;Prashant K Sarswat","doi":"10.1016/j.mtelec.2023.100033","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100033","url":null,"abstract":"<div><p>Magnetoplasmonics is an emerging interdisciplinary field that studies the interaction between magnetism and plasmonics, and has great promise for the development of novel optical, magnetic, and spintronic devices. The goal of this review is to provide a comprehensive overview of the current state-of-the-art in magnetoplasmonics, including the fundamentals, materials, and applications. The review first presents an introduction to the basic concepts of magnetoplasmonics, magneto-optical and plasmonic materials, and the various ways in which they can be combined to create novel hybrid systems. The review then examines the influence of surface plasmon resonances on the magneto-optical properties of a system as well as the achievement of balance of magneto-optical and surface plasmon properties to maximize the overall magnetoplasmonic properties. Selected major applications in biomedicine, biomedical technologies, optoelectronics and telecommunications are then discussed. Finally, it concludes with key challenges in the use of magnetoplasmonics in these applications, the need for new materials, new fabrication approaches, and further understanding to control the complex interactions between magnetism and plasmonics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100033"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}