Materials Today Electronics最新文献_第10页

Skin-integrated, stretchable triboelectric nanogenerator for energy harvesting and mechanical sensing 皮肤集成、可拉伸的摩擦电纳米发电机，用于能量收集和机械传感

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100012

Ling Zhao , Zihong Lin , King Wai Chiu Lai

{"title":"Skin-integrated, stretchable triboelectric nanogenerator for energy harvesting and mechanical sensing","authors":"Ling Zhao , Zihong Lin , King Wai Chiu Lai","doi":"10.1016/j.mtelec.2022.100012","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100012","url":null,"abstract":"<div><p>Due to the potential application of wearable electronics in human medical treatment and human machine interfaces, extensive investigations and research have been conducted recently. To provide sufficient and continuous power to the state-of-art flexible electronics, many wearable self-powered technologies have been developed. Triboelectric nanogenerators (TENGs) provide a prospective alternative option to efficiently transform mechanical energy during human daily movement into electricity, which can be utilized for motion capturing and energy harvesting. Here, we have developed a thin, skin-integrated stretchable triboelectric nanogenerator based on the contact-separation mode through a low-cost fabrication process. By adopting the serpentine designed Cu electrodes, the device has exhibited excellent flexibility and stretchability. To separate the two triboelectric layers, a flexible pillar array is built in the middle by screening printing, realizing the thin format of the TENG. Due to mechanical design, the TENG exhibits a wide pressure sensing range from ∼ 8.125 kPa to ∼ 43.125 kPa, corresponding to the open-circuit voltages ranging from ∼ 10 V to ∼ 80 V, allowing sensing to various external pressures, such as finger touching, tapping, and punching. At the external pressure of 43.125 kPa, the power output of the TENG could reach up to 300 μW/cm<sup>2</sup>. Under a constant tapping by fingers, the energy yielded by the device could light 40 LEDs. Furthermore, a 4 × 4 arrayed TENG-based pressure sensor was further fabricated and demonstrates its potential applications in human motion monitoring and tactile mapping.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"2 ","pages":"Article 100012"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000122/pdfft?md5=8f9f8662f5cde7decbe27e96e33ee548&pid=1-s2.0-S2772949422000122-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ion-gating analysis on conduction mechanisms in oxide semiconductors 氧化物半导体导电机理的离子门控分析

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100010

Won Hyung Lee , YoungJun Yang , Junwoo Park , Sun Geun Yoon , Huding Jin , Donggun Lee , Junghyup Han , Yong Hyun Cho , Youn Sang Kim

{"title":"Ion-gating analysis on conduction mechanisms in oxide semiconductors","authors":"Won Hyung Lee , YoungJun Yang , Junwoo Park , Sun Geun Yoon , Huding Jin , Donggun Lee , Junghyup Han , Yong Hyun Cho , Youn Sang Kim","doi":"10.1016/j.mtelec.2022.100010","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100010","url":null,"abstract":"<div><p>The electric field-effect is one of the common methods to tune the conductivity of materials in semiconductor devices because it can control the accumulation or depletion of charge carriers. However, to efficaciously dominate the electrical properties of the semiconductor in such a way, the application of an external voltage through the gate is an inevitable condition. Here, we propose an ion-dynamics-driven (ionovoltaic) transducer focusing on a self-gated field-effect by ion adsorption at the solid–liquid interface (an ion-gating effect without applied electric field). Considering an effective resistance derived from the generated signal, we establish an equivalent circuit of the ion-gating field-effect transducer to specifically analyze the conduction behavior of traveling electrons in an amorphous indium tin oxide film. As a result, using water droplet flow, we provide a convenient method to identify inherent conduction mechanisms of amorphous oxide semiconductors. This analysis has great potential as a tool to leap forward into a new interdisciplinary approach covering interface science and solid-state physics from a peculiar concept based on the ion-gating effect.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"2 ","pages":"Article 100010"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000109/pdfft?md5=cb1e3107ddf094c9a5c837417b932586&pid=1-s2.0-S2772949422000109-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3 基于外源Sb2Se3的柔性短波红外光电探测器

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100011

Kanghua Li, Xuke Yang, Feifan Yang, Jungang He, Guangzu Zhang, Shenglin Jiang, Chao Chen, Jiang Tang

引用次数: 8

Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors 基于低维半导体的宽光谱光电探测器的最新进展

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100013

Yali Yu , Yin Hu , Juehan Yang , Zhongming Wei

{"title":"Recent advances in wide-spectrum photodetectors based on low-dimensional semiconductors","authors":"Yali Yu , Yin Hu , Juehan Yang , Zhongming Wei","doi":"10.1016/j.mtelec.2022.100013","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100013","url":null,"abstract":"<div><p>Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors have unique atomic arrangements and excellent optical and electrical characteristics, such as high absorptivity, mechanical flexibility, and absence of dangling bonds on the surface. With these advantages, LD semiconductors are considered as a kind of promising materials in the field of photodetection. However, the applications of LD materials are limited by their dimensional constraint, large dark current, high noise, low quantum efficiency, slow response speed, and other characteristics. In this paper, the recent advances in wide-spectrum photodetectors in the ultraviolet to infrared spectrum are reviewed. The working mechanisms and performance parameters of photodetectors are described. Specific research examples based on wide-spectrum photodetectors are reviewed based on three aspects, namely the structure of photodetectors, their response mechanisms, and important performance indicators. Furthermore, the challenges in improving the performance of wide-spectrum photodetectors are discussed, along with the prospective development trends of wide-spectrum photodetectors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"2 ","pages":"Article 100013"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000134/pdfft?md5=5ccd93c4b41cd1272273dfc75bbcc656&pid=1-s2.0-S2772949422000134-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Recent Advances in Wide-spectrum Photodetectors Based on Low-Dimensional Semiconductors 基于低维半导体的广谱光电探测器研究进展

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100013

Yali Yu, Yin Hu, Juehan Yang, Zhongming Wei

引用次数: 2

Ion-gating analysis on conduction mechanisms in oxide semiconductors 氧化物半导体传导机制的离子门控分析

Materials Today Electronics Pub Date : 2022-09-01 DOI: 10.1016/j.mtelec.2022.100010

Won Hyung Lee, YoungJun Yang, Junwoo Park, Sun Geun Yoon, Huding Jin, Donggun Lee, Junghyup Han, Y. Cho, Youn Sang Kim

引用次数: 1

Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices 无偏磁和可重构微波磁器件的功能纳米结构

Materials Today Electronics Pub Date : 2022-08-01 DOI: 10.1016/j.mtelec.2022.100008

A. Haldar

引用次数: 2

Resistive Switching in Emerging Materials and their Characteristics for Neuromorphic Computing 新兴材料中的电阻开关及其在神经形态计算中的特性

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100004

M. Asif, Ashok Kumar V

引用次数: 9

Broadband Photodetection of Cd3As2: review and perspectives Cd3As2的宽带光探测:综述与展望

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100007

Yunkun Yang, F. Xiu

引用次数: 3

On Functional Boron Nitride: Electronic Structures and Thermal Properties 功能化氮化硼:电子结构和热性能

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100005

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, A. Suwardi, Hongfei Liu

引用次数: 6