Materials Today Electronics最新文献_第10页

Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices 无偏磁和可重构微波磁器件的功能纳米结构

Materials Today Electronics Pub Date : 2022-08-01 DOI: 10.1016/j.mtelec.2022.100008

A. Haldar

引用次数: 2

Resistive Switching in Emerging Materials and their Characteristics for Neuromorphic Computing 新兴材料中的电阻开关及其在神经形态计算中的特性

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100004

M. Asif, Ashok Kumar V

引用次数: 9

Broadband Photodetection of Cd3As2: review and perspectives Cd3As2的宽带光探测:综述与展望

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100007

Yunkun Yang, F. Xiu

引用次数: 3

On Functional Boron Nitride: Electronic Structures and Thermal Properties 功能化氮化硼:电子结构和热性能

Materials Today Electronics Pub Date : 2022-07-01 DOI: 10.1016/j.mtelec.2022.100005

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, A. Suwardi, Hongfei Liu

引用次数: 6

Dielectric interface passivation of polyelectrolyte-gated organic field-effect transistors for ultrasensitive low-voltage pressure sensors in wearable applications 用于可穿戴超灵敏低压传感器的聚电解质门控有机场效应晶体管的介电界面钝化

Materials Today Electronics Pub Date : 2022-06-01 DOI: 10.1016/j.mtelec.2022.100001

Ziyang Liu, Z. Yin, Yue Jiang, Q. Zheng

引用次数: 11

Self-healing sensorized soft robots 自我修复的传感软体机器人

Materials Today Electronics Pub Date : 2022-05-01 DOI: 10.1016/j.mtelec.2022.100003

Ellen Roels, Seppe Terryn, J. Brancart, Fatemeh Sahraeeazartamar, F. Clemens, G. Van Assche, B. Vanderborght

引用次数: 8

Resistive switching in emerging materials and their characteristics for neuromorphic computing 新兴材料中的电阻转换及其在神经形态计算中的特性

Materials Today Electronics Pub Date : 2022-05-01 DOI: 10.1016/j.mtelec.2022.100004

Mohd Asif , Ashok Kumar

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引用次数: 11

Dielectric interface passivation of polyelectrolyte-gated organic field-effect transistors for ultrasensitive low-voltage pressure sensors in wearable applications 可穿戴应用中超灵敏低压压力传感器用聚电解质门控有机场效应晶体管的介电界面钝化

Materials Today Electronics Pub Date : 2022-05-01 DOI: 10.1016/j.mtelec.2022.100001

Ziyang Liu , Zhigang Yin , Yue Jiang , Qingdong Zheng

{"title":"Dielectric interface passivation of polyelectrolyte-gated organic field-effect transistors for ultrasensitive low-voltage pressure sensors in wearable applications","authors":"Ziyang Liu , Zhigang Yin , Yue Jiang , Qingdong Zheng","doi":"10.1016/j.mtelec.2022.100001","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100001","url":null,"abstract":"<div><p>Polyelectrolyte-gated organic field-effect transistors (OFETs) are promising electronic devices for advanced sensing. However, real applications of polyelectrolyte-gated wearable OFET sensors are greatly limited by their severe hysteresis, poor stability, and low sensitivity. Here, a facile dielectric interface passivation strategy is developed for improving the performance of flexible OFETs with polyelectrolyte dielectrics towards ultrasensitive pressure sensors in wearable applications. Impressively, low-voltage polyelectrolyte-gated OFETs with negligible hysteresis and high mobility are achieved with beneficial effects of efficient leakage suppression, fine interfacial compatibility, and good resistance to moisture/ion migration induced by a nanoscale thin passivation layer of polystyrene at the polyelectrolyte/semiconductor interface. The OFETs with this novel composite dielectric of polystyrene/polyelectrolyte are further designed into flexible ultrasensitive pressure sensors with an exceptionally high sensitivity of 897.9 kPa<sup>−1</sup> at a low-operating voltage of -2 V. The flexible low-power OFET pressure sensors have good operational stability and can serve as wearable devices to monitor human arm movement. By integrating the OFET sensors as a wearable array, it can effectively detect pressure distribution and achieve high-resolution mapping and tactile imaging, demonstrating their good potentials for electronic skins, wearable technologies and multi-touch applications.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000018/pdfft?md5=48e3986d31c9895421ea685ad50cbd57&pid=1-s2.0-S2772949422000018-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72115703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

How to analyse a density of states 如何分析态密度

Materials Today Electronics Pub Date : 2022-05-01 DOI: 10.1016/j.mtelec.2022.100002

Michael Y. Toriyama, A. Ganose, M. Dylla, Shashwat Anand, Junsoo Park, M. Brod, Jason M. Munro, K. Persson, Anubhav Jain, G. J. Snyder

引用次数: 22

How to analyse a density of states 如何分析态密度

Materials Today Electronics Pub Date : 2022-05-01 DOI: 10.1016/j.mtelec.2022.100002

Michael Y. Toriyama , Alex M. Ganose , Maxwell Dylla , Shashwat Anand , Junsoo Park , Madison K. Brod , Jason M. Munro , Kristin A. Persson , Anubhav Jain , G. Jeffrey Snyder

引用次数: 26