Correlated Topological Electronic States and Surface Magnetic Orderings in Layered MnBi2Te4

Qi Bian , Zhibin Shao , Rui Song , Yuan Cao , Yuefei Hou , Shaojian Li , Runqing Zhai , Xin Li , Fawei Zheng , Wenliang Zhu , Yunbo Ou , Ping Zhang , Minghu Pan
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Abstract

Magnetic van der Waals (vdW) layered materials has inspired enormous interest recently by utilizing the spin degree of freedom for applications in next-generation 2D spintronic devices. Among these materials, MnBi2Te4 provides topological bands and the alternating ferromagnetic / antiferromagnetic ordering simultaneously, thus serves as an ideal system promising for 2D spintronics. However, many controversies and discrepancies between theoretical predictions and experimental observations remain unclarified, mainly due to unclarified correlations between electronic bands and surface magnetic ordering. Here, we performed intensive studies of low temperature scanning tunneling microscopy/spectroscopy (STM/S) on high-quality single crystal of MnBi2Te4, rationalized with density functional theory (DFT) calculations. Topological surface states (TSSs) and the dispersions are clearly observed by quasiparticle interference (QPI) imaging. The asymmetric QPI patterns at the energies near Dirac point, strongly suggest that the magnetization of the Mn layer in the topmost septuple-layer can be canted into the in-plane direction, which is responsible for the observations of gapless TSSs. Furthermore, various bulk bandgaps observed at the temperatures below and above the Nèel temperature or at the edge of surface terraces, implies a variety of band structures correlated with rich magnetic orders in the surface Mn layer. Our results provide an in-depth understanding of correlations between topological electronic structures and magnetic ordering of surface layer in magnetic topological insulator MnBi2Te4, as well as spin-dependent transport properties in spintronic devices.

层状MnBi2Te4的相关拓扑电子态和表面磁序
磁性范德华(vdW)层状材料最近通过利用自旋自由度在下一代2D自旋电子器件中的应用而引起了人们的极大兴趣。在这些材料中,MnBi2Te4同时提供了拓扑带和交替的铁磁/反铁磁有序,因此是一个有希望用于2D自旋电子学的理想系统。然而,理论预测和实验观测之间的许多争议和差异仍未得到证实,主要是由于电子能带和表面磁有序之间的相关性尚未得到证实。在这里,我们对高质量的MnBi2Te4单晶进行了深入的低温扫描隧道显微镜/光谱(STM/S)研究,并通过密度泛函理论(DFT)计算进行了合理化。准粒子干涉(QPI)成像可以清楚地观察到拓扑表面态(TSSs)和色散。在狄拉克点附近的能量处的不对称QPI图案强烈地表明,最上面的七重层中的Mn层的磁化可以倾斜到平面内方向,这是观察到无隙TSS的原因。此外,在低于和高于Nèel温度的温度下或在表面阶地的边缘观察到的各种体带隙,意味着与表面Mn层中丰富的磁序相关的各种能带结构。我们的结果深入了解了磁性拓扑绝缘体MnBi2Te4中拓扑电子结构与表面层磁有序之间的相关性,以及自旋电子器件中与自旋相关的输运性质。
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