Materials Today Electronics最新文献

{"title":"Recent advancements and challenges in highly stable all-inorganic perovskite solar cells","authors":"Sunkyu Kim ,&nbsp;Muhammad Adnan ,&nbsp;Zobia Irshad,&nbsp;Wonjong Lee,&nbsp;Siwon Yun,&nbsp;Hyeji Han,&nbsp;Jongchul Lim","doi":"10.1016/j.mtelec.2024.100127","DOIUrl":"10.1016/j.mtelec.2024.100127","url":null,"abstract":"<div><div>Organic–inorganic perovskite solar cells (PSCs) have attracted significant attention because of their outstanding photoelectric conversion efficiency, simple fabrication process, and long exciton diffusion lengths. In particular, the power conversion efficiency of single-junction PSCs is 26.1%, whereas that of multi-junction silicon/perovskite tandem solar cells reaches an impressive 33.9%, indicating good prospects for the solar cell market. However, traditional organic–inorganic PSCs are highly sensitive to moisture, light, and heat, which negatively affect their stability and thereby commercialization. Nowadays, all-inorganic perovskites are attracting considerable attention for application in solar cells because of their potential to attain high resistance to environmental factors. All-inorganic perovskites have been considered an alternative to organic–inorganic perovskites because of their advantages over organic–inorganic perovskites, such as the capability to stabilize the photoactive phase, long-term thermal stability, and the possibility of tailoring the bandgap structure. Herein, we perform a detailed meta-analysis of materials and approaches used for the preparation of all-inorganic perovskite thin films and discuss recent advancements in key performance parameters such as efficiency, stability, and electrical and optoelectronic properties. Finally, we outline directions for future studies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100127"},"PeriodicalIF":0.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coherent epitaxy of HfxZr1-xO2 thin films by high-pressure magnetron sputtering","authors":"Tengteng Zhang ,&nbsp;Yuyan Fan ,&nbsp;Zhipeng Xue ,&nbsp;Mengwei Si ,&nbsp;Zhen Wang ,&nbsp;Xiuyan Li ,&nbsp;Yanwei Cao","doi":"10.1016/j.mtelec.2024.100124","DOIUrl":"10.1016/j.mtelec.2024.100124","url":null,"abstract":"<div><div>Due to remarkable high-k and ferroelectric properties in CMOS devices, the study of crystalline Hf_xZr_1-xO₂ (HZO) thin films has attracted tremendous interest recently. However, up to now, the epitaxial growth of HZO films has only been achieved by pulse laser deposition, a technique scarcely utilized in CMOS devices. Therefore, developing appropriate epitaxial methods of HZO films (such as sputtering) is fairly necessary, but a challenge at present. In this work, high-quality single-crystalline HZO films were synthesized by high-pressure magnetron sputtering. The epitaxial growth of HZO films on yttria-stabilized zirconia (YSZ) substrate was demonstrated by a combination of high-resolution X-ray diffraction, atom force microscope, and scanning transmission electron microscope. In addition, good insulating characteristics were obtained by replacing insulating substrates with conductive substrates as electrodes. Our results provide a novel way for the epitaxial growth of the single-crystalline structure of HZO thin films towards the high performance of high-k and ferroelectric devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100124"},"PeriodicalIF":0.0,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142699703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism","authors":"Anirudh Kumar ,&nbsp;Satendra Pal Singh ,&nbsp;Sejoon Lee ,&nbsp;Sanjeev Kumar Sharma","doi":"10.1016/j.mtelec.2024.100125","DOIUrl":"10.1016/j.mtelec.2024.100125","url":null,"abstract":"<div><div>Two terminal resistive switching memories are emerging candidates for the next generation of non-volatile memory in the upcoming era of artificial intelligence and big data generated globally. Much research is currently focused on developing write-once-read-many-times (WORM) memory devices, which offer the advantages of small size, high speed, improved energy consumption, and large data capacity. Nanostructured organic/inorganic heterojunction composites have garnered significant attention due to their excellent scalability and low-cost fabrication. In the present study, the YZO/PMMA hybrid nanocomposite bilayer ReRAM was fabricated on ITO substrates. The I-V characteristics of the fabricated ITO/YZO/PMMA/Al device exhibited the ternary WORM switching behavior (HRS, LRS1, and LRS2 states). It has been observed that three states of “HRS”, “LRS1” and “LRS2” exhibit a distinct current ratio of LRS1/HRS and LRS2/HRS of 10^1.6 and 10^2.4_, respectively, with good data retention (up to 500 h). It was demonstrated that Y-dopant concentration into ZnO significantly transits the switching behavior of ITO/ZnO/PMMA/Al memory from binary to ternary WORM switching characteristics. Ohmic conduction and space charge-limited current (SCLC) were observed in the HRS. In LRS1, the Schottky emission mechanism was observed, while in LRS2, Ohmic conduction was observed. The physical model of the formation of permanent conducting filaments (CFs) consisting of oxygen vacancies in the device's active layer is proposed to explain the RS behavior. These findings reveal the low-cost development of high-density, non-volatile memory devices operated with very low power consumption that can be used to protect data against unauthorized software/hardware and hackers.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution","authors":"Guanzheng Luo,&nbsp;Wang Li,&nbsp;Yingchao Wei,&nbsp;Yao Dai,&nbsp;Wenjie Shu,&nbsp;Linyao Wu,&nbsp;Xin Li,&nbsp;Yubo Luo,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2024.100126","DOIUrl":"10.1016/j.mtelec.2024.100126","url":null,"abstract":"<div><div>Cu₃InSnSe₅ is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe₂ precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe₂ precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak <em>ZT</em> of 1.00 and an average <em>ZT</em> of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu₃InSnSe₅ pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100126"},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolayer nodal line semimetal AgTe as gate-reconfigurable ‘cold’ Ohmic contact to 2D semiconductors MoSi2N4 and WSi2N4","authors":"Tong Su ,&nbsp;Yueyan Li ,&nbsp;Weiwei Zhao ,&nbsp;Liemao Cao ,&nbsp;Yee Sin Ang","doi":"10.1016/j.mtelec.2024.100123","DOIUrl":"10.1016/j.mtelec.2024.100123","url":null,"abstract":"&lt;div&gt;&lt;div&gt;MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; are air-stable two-dimensional (2D) semiconductors promising for next-generation electronics applications. However, the challenge of forming high-quality Ohmic contacts with these materials must be addressed before their potential can be fully unlocked. In this work, we investigate the role of AgTe, a recently synthesized topological nodal line semimetal, as a high work function (&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;W&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;M&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;) semimetallic contact for MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; using first-principles density functional theory (DFT) simulations. Phonon dispersion and &lt;em&gt;ab initio&lt;/em&gt; molecular dynamics simulations confirm the structural stability of AgTe/MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and AgTe/WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; heterostructures. The high-&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;W&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;M&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; nature of AgTe leads to &lt;span&gt;&lt;math&gt;&lt;mi&gt;p&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type Schottky contacts. We show that electrostatic gate-induced charge doping, which can be introduced using practically achievable gating conditions, can tune the heterostructure between &lt;span&gt;&lt;math&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type and &lt;span&gt;&lt;math&gt;&lt;mi&gt;p&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type Ohmic contacts, thus suggesting the potential of AgTe/MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and AgTe/WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; as gate-reconfigurable contact useful for CMOS device applications. Notably, the presence of a ‘mini gap’ above the semimetallic bands in AgTe enables the formation of &lt;span&gt;&lt;math&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type ‘cold’ Ohmic contact which is useful for steep-slope device beyond the &lt;em&gt;Boltzmann’s tyranny&lt;/em&gt;. These findings reveal the potential of AgTe as an electrically tunable Ohmic contacts to MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100123"},"PeriodicalIF":0.0,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142533929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in the development of metal halide perovskite electronics for sensing applications","authors":"Albert Buertey Buer ,&nbsp;Nana Yaw Asare Boateng ,&nbsp;Benjamin Asafo-Adjei ,&nbsp;Sooncheol Kwon,&nbsp;Jea Woong Jo","doi":"10.1016/j.mtelec.2024.100122","DOIUrl":"10.1016/j.mtelec.2024.100122","url":null,"abstract":"<div><div>Metal–halide perovskites have attracted significant attention recently owing to their exceptional optoelectronic performance. Their unique optical and electronic properties, combined with their ease of fabrication and high sensitivity to varied stimuli, render them promising candidates for next-generation efficient sensors. These materials have demonstrated outstanding sensing performance, with record-breaking sensitivities, rapid response times, and superior selectivity. This review comprehensively evaluates the recent progress in the applications of metal-halide perovskite-based sensors. Furthermore, this study addresses the remaining challenges and future perspectives crucial for the advancement of metal–halide perovskites in sensing technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2024-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insight into the origins of mobility deterioration in indium phosphide-based epitaxial layer","authors":"Si Li ,&nbsp;Yongkang Jiang ,&nbsp;Hua Wei ,&nbsp;Hanbao Liu ,&nbsp;Xiaoda Ye ,&nbsp;Xingkai Zhao ,&nbsp;Feihong Chen ,&nbsp;Jiayun Deng ,&nbsp;Jie Yang ,&nbsp;Chong Wang ,&nbsp;Tingfang Liu ,&nbsp;Tinglong Liu ,&nbsp;Gang Tang ,&nbsp;Shikun Pu ,&nbsp;Qingju Liu ,&nbsp;Feng Hui ,&nbsp;Feng Qiu","doi":"10.1016/j.mtelec.2024.100121","DOIUrl":"10.1016/j.mtelec.2024.100121","url":null,"abstract":"<div><p>Ultra-high mobility speciality is a critical figure of merit for ultrapure materials and high-speed optoelectronic devices. However, unintentional doping-inducing various scattering frequently deteriorates mobility capacity. Therefore, how to elucidate the origin of mobility deterioration is still an open and technically challenging issue. Here we report that unintentional-doping silicon ion would be propagated into the indium phosphide (InP)’s epitaxial layer via analysis of time-of-flight and dynamic secondary ion mass spectrometry. The unintentional silicon ion in the InP wafer surface is responsible for the subsequent InGaAs epitaxial layer's mobility attenuation. The first-principles calculations and Boltzmann transport theory prove that polar optical phonon scattering (Fröhlich scattering) in non-doping InGaAs is the dominant scattering mechanism at high temperatures over 100 K. In contrast, the low-temperature scattering process is dominated by ionized impurities scattering. The unintentional silicon ion improves the Fröhlich scattering-dominated critical temperature. Our findings provide insight into the mobility degeneration originating from unintentional pollution and underlying scattering mechanisms, which lay a solid foundation for developing high-grade, super-speed, and low-power photoelectronic devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2024-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000330/pdfft?md5=4ebd38ea3fa42fd920892c7af97a0674&pid=1-s2.0-S2772949424000330-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142272427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High responsivity and detectivity β-Ga2O3 solar-blind photodetectors optimized by oxygen vacancy engineering","authors":"Yi Long ,&nbsp;Kun Ba ,&nbsp;Jie Liu ,&nbsp;Xiaolei Deng ,&nbsp;Yunxiang Di ,&nbsp;Ke Xiong ,&nbsp;Yan Chen ,&nbsp;Xudong Wang ,&nbsp;Chang Liu ,&nbsp;Ziqing Li ,&nbsp;Dandan Liu ,&nbsp;Xiaosheng Fang ,&nbsp;Qi Liu ,&nbsp;Jianlu Wang","doi":"10.1016/j.mtelec.2024.100116","DOIUrl":"10.1016/j.mtelec.2024.100116","url":null,"abstract":"<div><p>Solar-blind photodetectors (SBPDs) are core essential components for many critical applications such as precision guidance, fire warning, and space communications. Ultra-wide bandgap semiconductor β-Ga₂O₃ is considered to be an ideal material for the fabrication of SBPDs. However, synthetizing β-Ga₂O₃ with high quality factor while simultaneously in situ modulation of electronic and optoelectronic properties to enhance performance has been challenging. Here, pulsed laser deposition (PLD) technology is used to synthesize high-quality β-Ga₂O₃ thin films on a sapphire substrate. The oxygen vacancy engineered β-Ga₂O₃ films can achieve in situ precise control of their surface morphology, optical parameters, and optoelectronic properties by simply adjusting the oxygen pressure. Meanwhile, the optimal thickness of the β-Ga₂O₃ film for the developing high-performance SBPD is ∼221 nm, determined by fitting and analyzing the optical parameters measured by the ellipsometry. Subsequently, the influence of oxygen pressure on the performance of β-Ga₂O₃ SBPD is thoroughly explored, considering the optimization of electrode size and deposition time. When the oxygen pressure is set to 15 Pa, the β-Ga₂O₃-based SBPD achieves highly competitive responsivity (<em>R</em>) and detectivity (<em>D*</em>) at 250 nm, with values of 1080 A·W⁻¹ and 1.4 × 10¹⁶ cm·W⁻¹·Hz^1/2, respectively. Additionally, the noise component of the β-Ga₂O₃ SBPD is further studied to calibrated the traditional device performance results. This work introduces a simple and straightforward approach to in situ tuning of the optoelectronic properties of β-Ga₂O₃, which is important for advancing β-Ga₂O₃ film growth technology and fabricating high-performance photodetectors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000287/pdfft?md5=9fbc471e969c83d076214df69c5b1132&pid=1-s2.0-S2772949424000287-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142241734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics","authors":"Sheng-Zhu Ho ,&nbsp;Yu-Chen Liu ,&nbsp;Meng-Xun Xie ,&nbsp;Yu-Huai Li ,&nbsp;Kai-An Tsai ,&nbsp;Chun-Wei Huang ,&nbsp;Ying-Chih Pu ,&nbsp;Jan-Chi Yang ,&nbsp;Yi-Chun Chen","doi":"10.1016/j.mtelec.2024.100115","DOIUrl":"10.1016/j.mtelec.2024.100115","url":null,"abstract":"<div><p>Ferroic domains and relevant topological defects, such as domain walls and vortices, have gained significant attention as functional units for potential advancements in nanoelectronics. Pb(Zr_xTi_1-x)O₃ (PZT) is a tetragonal ferroelectric material at room-temperature, exhibiting remarkable piezoelectricity and intricate domain structures. In this work, we explore the ferroelectric properties, photoelectric reactions, and efficient manipulation pathways of the unconventional superstructures in epitaxial (101)-oriented PZT thin films. Employing piezoresponse force microscopy (PFM) and conductive atomic force microscopy (cAFM), we unveil the three-dimensional polarization configurations of the superdomain structures inherently featuring conductive charged domain walls. Our findings reveal an increase in photoactivity at the head-side charged domain walls, attributed to the band-bending mechanism. Additionally, we discover the enhanced photoelectrochemical (PEC) performance in the superdomain structures compared to the (101)-oriented PZT films with conventional c/a domains. Furthermore, time-dependent pulse voltages are utilized to dynamically assess local currents and realize direct conductivity modulation by manipulating distinct polarization states. The elucidation of the photoelectrical mechanism and delineation of diverse pathways for intermediate state control underscore the potential of ferroelectric superdomains in constructing functional photoelectronic nanodevices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000275/pdfft?md5=655c50b1b2c1f8aa88f867ce1cae25f6&pid=1-s2.0-S2772949424000275-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142095981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion dynamics in metal halide perovskites for resistive-switching memory and neuromorphic memristors","authors":"Sumin Lee ,&nbsp;Jeonghyeon Son ,&nbsp;Beomjin Jeong","doi":"10.1016/j.mtelec.2024.100114","DOIUrl":"10.1016/j.mtelec.2024.100114","url":null,"abstract":"<div><p>Resistive-switching (RS) memory devices, or memristors, necessitate active materials of which electronic resistance is tunable by an external electric field. Metal halide perovskites (MHP) are representative RS materials wherein the electronic resistance is modulated by migration of intrinsic native or extrinsic impurity mobile ions. Since the first demonstration of MHP-based RS memory nearly a decade ago, MHPs have proven their great potential for energy-efficient nonvolatile memory devices. Dynamic transport of the mobile ions further allows MHPs to exhibit multistate resistance tunability at multiple timescale, which can be harnessed for neuromorphic memristors. Herein, we provide a comprehensive review on progress in RS memory devices with MHPs and their applications for neuromorphic memristors. We discuss how the electronic resistance of the MHPs is modulated by dynamic mobile ions, and focus on the ionic-electronic correlation that involves doping phenomena in MHPs on account of previous theoretical predictions and experimental verifications. Finally, we provide our perspective on major hurdles of MHPs for real-world applications of emerging nonvolatile memory and neuromorphic memristor technology.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000263/pdfft?md5=af7a40812f1bfd05514d2995b4027ddc&pid=1-s2.0-S2772949424000263-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142087098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}