{"title":"High-performance CuI-based ultraviolet phototransistors","authors":"Mingyang Wang , Huihui Zhu , Ao Liu","doi":"10.1016/j.mtelec.2025.100149","DOIUrl":"10.1016/j.mtelec.2025.100149","url":null,"abstract":"<div><div>Transparent copper iodide (CuI) holds significant promise as an emerging semiconductor for high-performance ultraviolet (UV) photodetectors, owing to its high mobility and suitable band gap, which enables efficient UV absorption while suppressing visible light. However, its intrinsic high hole concentration results in extremely high dark current, leading to low signal-to-noise ratio and detectivity. To address this issue, we deposited a Zn-doped CuI channel and fabricated phototransistors using a low-cost solution process at low temperatures. By modulating the hole concentration and involving gate bias modulation, we achieved superior figures of merit for 365 nm UV detection. These include a high responsivity of 1.9 × 10<sup>3</sup> A/W, a detectivity of up to 2.8 × 10<sup>14</sup> Jones, and an impressive external quantum efficiency of 6.4 × 10<sup>5</sup> %. To the best of our knowledge, these values represent the highest performance among all reported CuI-based photodetectors. Our results demonstrate the significant potential of CuI phototransistors for future large-area, low-cost ultraviolet detection systems.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100149"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143738571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zeqi Zang, Zixu Sa, Pengsheng Li, Guangcan Wang, Mingxu Wang, Yanxue Yin, Feng Chen, Zai-xing Yang
{"title":"Diameter dependent synaptic behaviors of III-V nanowires for neuromorphic image denoising","authors":"Zeqi Zang, Zixu Sa, Pengsheng Li, Guangcan Wang, Mingxu Wang, Yanxue Yin, Feng Chen, Zai-xing Yang","doi":"10.1016/j.mtelec.2025.100148","DOIUrl":"10.1016/j.mtelec.2025.100148","url":null,"abstract":"<div><div>Diameter is an important geometry parameter for III-V nanowires (NWs) in electronics, optoelectronics and neuromorphic computing. In this work, the electrical stability and synaptic behaviors of thin and thick GaSb NWs are studied in detailed. With the higher surface-to-volume ratio and much more Sb-O bonds on the surface, the thin NWs possess heavier surface states than thick NWs. As a result, the thin NW filed-effect-transistors (NWFETs) display worse electrical stability and more obvious synaptic behaviors. These impressive phenomena result from the surface states related carrier trapping and detrapping processes. By taking use of the thin and thick NWFETs together for neuromorphic image, the recognition accuracy can reach to 93.9 %, which is much higher than that of individual thin (92.1 %) or thick (84.4 %) NWFETs. This work offers new insight into the modulation of surface states for the coming neuromorphic computing by using the global NWFETs.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100148"},"PeriodicalIF":0.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143734927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Rapid fabrication of flexible copper-plated circuit boards on cotton fabrics and conductive threads for textile materials using pencil-drawn technique","authors":"Vinit Srivastava , Shivam Dubey , Rahul Vaish , Bharat Singh Rajpurohit","doi":"10.1016/j.mtelec.2025.100141","DOIUrl":"10.1016/j.mtelec.2025.100141","url":null,"abstract":"<div><div>This study presents an approach for fabricating flexible and stable electroplated circuits directly onto fabric and thread. We achieve this through a simple method. Pencil-drawn patterns on cotton fabric are followed by copper electroplating in a copper sulfate solution. This method eliminates the need for complex pre-treatment and lithography techniques, thus enabling rapid and on-site circuit development. This research investigated the influence of different pencil grades, drawing frequency, and plating time on the overall conductivity and flexibility of the fabric-based circuits. The electroplated copper demonstrated exceptional bending and thermal stability, maintaining consistent conductivity over a wide bending range (-180° to 180°), with minimal linear resistance change after extreme twisting. Furthermore, the fabricated circuits functioned effectively as Light Dependent Resistor (LDR) based Plated Circuit Boards (PCB), demonstrating robustness and practical potential. The fabrication of conductive threads has also been explored by electroplating graphite threads. These threads displayed remarkable flexibility, maintaining consistent conductivity (0.5 Ω/cm) even under tight knots. The copper-plated textile exhibited stable resistance: 0.6 Ω across 22 °C to 55 °C and 0.5 Ω/cm under bending angles from -180° to +180°. It endured 1000 folding cycles, with resistance increasing slightly to 1.3 Ω. Furthermore, this work shows that the flexible PCBs are resistant to folding stress, environmentally friendly, and disposable, which is a significant step toward sustainable electronics. The results of this study hold significant potential applications in textile-based electrical systems, wearable electronics, and sensors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100141"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md. Zahid Hasan , Rezaur Raihan , Nur Kutubul Alam , Md. Rejvi Kaysir , Md. Shaharuf Islam , M. A. Parvez Mahmud
{"title":"Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection","authors":"Md. Zahid Hasan , Rezaur Raihan , Nur Kutubul Alam , Md. Rejvi Kaysir , Md. Shaharuf Islam , M. A. Parvez Mahmud","doi":"10.1016/j.mtelec.2025.100144","DOIUrl":"10.1016/j.mtelec.2025.100144","url":null,"abstract":"<div><div>The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for <em>k</em> = 1 to <em>k</em> = 15) compared to the p-type (-101 mV for <em>k</em> = 1 to <em>k</em> = 4, and 74.59 mV for <em>k</em> = 4 to <em>k</em> = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant <em>k</em> = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher I<sub>on</sub>/I<sub>off</sub> ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100144"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiangming Wu , Zhengping Zhang , Zhenfei Li , Jin Zhang , Xiong Wang , Weiren Zhu
{"title":"Dynamic multimode OAM generation implemented by mechanically reconfigurable metasurfaces","authors":"Xiangming Wu , Zhengping Zhang , Zhenfei Li , Jin Zhang , Xiong Wang , Weiren Zhu","doi":"10.1016/j.mtelec.2025.100142","DOIUrl":"10.1016/j.mtelec.2025.100142","url":null,"abstract":"<div><div>Electromagnetic waves carrying orbital angular momentum (OAM) hold promising applications in enhanced communications by exploiting their multiple and orthogonal modes. While programmable metasurfaces offer the capability to generate OAM waves with varying modes, they come with complexities in design and elevated costs due to the heavy reliance on active devices. In this paper, we present an innovative approach for dynamic OAM generation utilizing a pair of mechanically reconfigurable metasurfaces. The phase distributions of the two metasurfaces are carefully crafted to exhibit reconfigurable characteristics upon superimposition by adjusting their relative displacement. Specifically, the designed metasurfaces feature full phase modulation and high transmittance above -3 dB within 21–24 GHz. With these metasurfaces, OAM waves with six distinct modes (topological charge <span><math><mrow><mi>l</mi><mo>=</mo><mo>±</mo><mn>1</mn><mo>,</mo><mo>±</mo><mn>2</mn><mo>,</mo><mo>±</mo><mn>3</mn></mrow></math></span>) have been dynamically achieved, with each mode being generated under a specific displacement. The proposed design is rigorously validated through numerical simulations and experimental measurements.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100142"},"PeriodicalIF":0.0,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Accelerating ionic liquid research in perovskite solar cells through machine learning:Opportunities and challenges","authors":"Jiazheng Wang, Qiang Lou, Zhengjie Xu, Yufeng Jin, Guibo Luo, Hang Zhou","doi":"10.1016/j.mtelec.2025.100143","DOIUrl":"10.1016/j.mtelec.2025.100143","url":null,"abstract":"<div><div>In recent years, there have been continuous and remarkable efforts from both academic and industry to improve the efficiency and stability of perovskite solar cells (PSCs). Among all the efforts, Ionic liquids (IL), a class of compounds with asymmetric organic cations and various anions, stand out as one of the most promising additives and interface modification layer for realizing high performance PSCs due to their unique physicochemical properties. Nonetheless, due to the variety of ionic liquids, searching an effective and optimum IL passivation materials for PSCs requires a huge amount of time and efforts in conventional trial-and-error experiments. In this context, machine learning (ML) offers powerful capabilities to handle complex, nonlinear problems, potentially accelerating the discovery and optimization of IL for PSCs applications. This review provides a comprehensive overview of the current applications of IL in PSCs, and summarizes the opportunities and key challenges in combining ML methods for IL research in PSCs. With the proposed ML frameworks, it is expected that a more predictive ML piloted research process would accelerate the discovery and optimization of IL in PSCs.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100143"},"PeriodicalIF":0.0,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang
{"title":"Graphene metasurfaces: Advances in lens applications, design strategies, and fabrication techniques","authors":"Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang","doi":"10.1016/j.mtelec.2025.100140","DOIUrl":"10.1016/j.mtelec.2025.100140","url":null,"abstract":"<div><div>This review comprehensively examines the recent advancements in graphene-based metasurface lenses, shedding light on their innovative design principles, advanced manufacturing techniques, and superior optical properties. Graphene's exceptional electrical, mechanical, and optical characteristics, combined with the versatile functionality of metamaterials and metasurfaces, have led to the development of highly efficient and dynamic lens systems. These lenses demonstrate remarkable capabilities, including tunable focal lengths, enhanced light modulation, and improved photodetection sensitivity. Such properties render them highly suitable for transformative applications in diverse fields like high-resolution imaging, precision sensing, and next-generation telecommunications. The review provides an in-depth analysis of the state-of-the-art methods used in the fabrication of these lenses, such as chemical vapor deposition, advanced lithography, and nanomanufacturing, to achieve nanoscale precision and functional integration. Moreover, the challenges associated with large-scale production scalability, fabrication techniques' complexity, and graphene's long-term stability under varying environmental conditions are critically examined. In exploring these aspects, the review identifies key directions for future research, emphasizing the need for interdisciplinary collaboration to overcome current limitations. By addressing these challenges and leveraging advancements in material science and nanotechnology, graphene-based metasurface lenses have the potential to revolutionize the future of optical lens systems and photonic technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100140"},"PeriodicalIF":0.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran
{"title":"Structural, surface, electrical and UVC sensing properties of high temperature RF sputtered gallium oxide thin films","authors":"Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran","doi":"10.1016/j.mtelec.2025.100139","DOIUrl":"10.1016/j.mtelec.2025.100139","url":null,"abstract":"<div><div>Gallium oxide thin films have been deposited on a-, c-, r- plane sapphire and amorphous Si<sub>3</sub>N<sub>4</sub> at 800 °C by RF sputtering from a 99.99 % purity Ga<sub>2</sub>O<sub>3</sub> target then characterised structurally, optically and electrically. A fixed process pressure of 3.0 mTorr was employed with O<sub>2</sub>:Ar ratios of 0:1 (0 % O<sub>2</sub>), 1:18 (5 % O<sub>2</sub>), 1:9 (10 % O<sub>2</sub>) and 3:17 (15 % O<sub>2</sub>). X-ray diffractograms attributable to β-Ga<sub>2</sub>O<sub>3</sub> were collected from the films grown on a- and c- plane sapphire. The highest crystallinity was observed in the films grown on c-plane sapphire. Ga<sub>2</sub>O<sub>3</sub> films on r-plane sapphire and Si<sub>3</sub>N<sub>4</sub> produced no diffracted peaks and were deemed to be amorphous or nanocrystalline. Ga 3d X-ray photoelectron spectra showed only Ga-O bonding with no evidence of Ga-Ga bonding, even in the films deposited with only Ar introduced to the chamber. Direct optical bandgaps exceeding 5.0 eV were observed in the films on a- and c- plane sapphire. Valence band spectra showed the valence band maxima (VBM) and Fermi level (FL) were separated by ∼3 eV in the Ga<sub>2</sub>O<sub>3</sub> films on a- and c- plane sapphire whilst films on r-plane sapphire exhibited VBM - FL gaps of ∼2.5 eV, indicative of low shallow impurity/defect doping density, most likely due to oxygen vacancies. Selected films were incorporated into metal-semiconductor-metal UV-C detectors. Solar-blind detection was confirmed and the maximum measured UV-C /dark current ratios (I<sub>UVC</sub>:I<sub>dark</sub>) exceeded 10<sup>3</sup>:1.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100139"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sheikh Montasir Mahbub, Abdullah Al Mahmud Nafiz, Rakibul Hasan Sagor
{"title":"Advanced refractive index sensing through ultra-short pulse compression in hollow core photonic crystal fiber","authors":"Sheikh Montasir Mahbub, Abdullah Al Mahmud Nafiz, Rakibul Hasan Sagor","doi":"10.1016/j.mtelec.2025.100137","DOIUrl":"10.1016/j.mtelec.2025.100137","url":null,"abstract":"<div><div>This manuscript investigates the propagation of ultra-short pulses through hollow-core photonic crystal fibers (HC-PCF) and explores their application as high-sensitivity refractive index sensors. The unique guiding properties of HC-PCFs, combined with the ability to confine light within the hollow core, enable enhanced light-matter interactions. When exposed to intense light, these interactions can demonstrate nonlinear optical phenomena, such as pulse compression, which has been utilized here as a tool for detecting changes in refractive index. The HC-PCF has been designed to allow testing materials with refractive indices ranging from 1.4 to 1.45 to be placed in the core, where ultra-short pulses centered at 1550 nm with a duration of 1 picosecond and an input power of 1 KW, are sent from one end to leverage the nonlinear optical properties. By leveraging these nonlinear phenomena, it has been demonstrated that HC-PCFs exhibit unique attributes when the testing materials inside the core have varying refractive indices. Employing this novel technique, unique compression sensitivity and significant power upsurges have been achieved for the materials under test (MUT) with different refractive indices. Unlike the refractive index sensing methods in practice, this novel technique works based on lesser detection parameters and offers improved sensitivity and selectivity. The proposed method has achieved a minimum sensitivity of 11.6 %, which means the pulse is compressed by a factor of nine, and the maximum power surge recorded is 2313.918 W. This innovative approach opens new avenues for developing advanced sensing systems using HC-PCFs in fields such as environmental monitoring, bio-sensing, and chemical detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100137"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ao Liu , Jun Xi , Hanlin Cen , Jinfei Dai , Yi Yang , Cheng Liu , Shuai Guo , Xiaofang Li , Xiaotian Guo , Feng Yang , Meng Li , Haoxuan Liu , Fei Zhang , Huagui Lai , Fan Fu , Shuaifeng Hu , Junke Wang , Seongrok Seo , Henry J. Snaith , Jinghui Li , Yong-Young Noh
{"title":"Roadmap on metal-halide perovskite semiconductors and devices","authors":"Ao Liu , Jun Xi , Hanlin Cen , Jinfei Dai , Yi Yang , Cheng Liu , Shuai Guo , Xiaofang Li , Xiaotian Guo , Feng Yang , Meng Li , Haoxuan Liu , Fei Zhang , Huagui Lai , Fan Fu , Shuaifeng Hu , Junke Wang , Seongrok Seo , Henry J. Snaith , Jinghui Li , Yong-Young Noh","doi":"10.1016/j.mtelec.2025.100138","DOIUrl":"10.1016/j.mtelec.2025.100138","url":null,"abstract":"<div><div>Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100138"},"PeriodicalIF":0.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143211787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}