Materials Today Electronics最新文献

{"title":"Large terahertz nonlinearity in two-dimensional electron gas metasurface","authors":"Kaixin Yu ,&nbsp;Chen Wang ,&nbsp;Yongzheng Wen ,&nbsp;Yong Tan ,&nbsp;Shiqiang Zhao ,&nbsp;Renfei Zhang ,&nbsp;Jingbo Sun ,&nbsp;Ji Zhou","doi":"10.1016/j.mtelec.2025.100157","DOIUrl":"10.1016/j.mtelec.2025.100157","url":null,"abstract":"<div><div>Nonlinear responses in the terahertz (THz) frequency range are essential for advancing THz sources and modulators. However, the development of THz nonlinear materials with efficient second- and third-order nonlinear susceptibilities at room temperature remains challenging. Here, we introduce a THz nonlinear metasurface based on gallium nitride two-dimensional electron gas (2DEG), capable of both second harmonic generation (SHG) and third harmonic generation (THG). By leveraging the magneto-electric coupling mechanism built in the metasurface, we induce anharmonic oscillations of electrons to achieve THz SHG with the effective second-order nonlinear susceptibility reaching 14.3 μm V^-1. Meanwhile, the localized electric field confinements in the same metasurface structure substantially improve the intrinsic third-order nonlinearity of the 2DEG as well, enhancing the THz THG by over two orders of magnitude. By simply scaling the structure of the metasurface, the working frequency of the intense nonlinear responses can be engineered at will. Our results provide a promising route to efficient THz second- and third-order nonlinearities within a single metasurface, which may open new pathways for developing highly integrated, room-temperature THz sources, as well as further advancements in high-speed electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100157"},"PeriodicalIF":0.0,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal transport in magnetic materials: A review","authors":"Shuchen Li ,&nbsp;Shucheng Guo ,&nbsp;Thomas Hoke,&nbsp;Xi Chen","doi":"10.1016/j.mtelec.2025.100156","DOIUrl":"10.1016/j.mtelec.2025.100156","url":null,"abstract":"<div><div>Thermal transport in magnetic materials has become a pivotal research area due to its fundamental importance and potential applications in thermal management, spintronics, and energy conversion technologies. Beyond conventional heat carriers such as phonons and electrons, magnetic excitations—including magnons and spinons—play a substantial role in heat transport within these materials. Their transport behaviors are influenced by factors such as dimensionality, defects, magnetic structures, and external stimuli like magnetic and electric fields. Additionally, the coupling of magnetic excitations with phonons or electrons is critical in modulating the thermal properties of magnetic materials. This review provides a comprehensive overview of thermal transport mechanisms in magnetic materials, with a focus on magnetic excitations. Recent advancements reveal intriguing behaviors, including ballistic magnetic thermal transport, size-dependent thermal transport, and the impact of various scattering processes on thermal conductivity. Furthermore, external magnetic and electric fields have been shown to manipulate thermal conductivity by modifying magnetic dispersion, spin configurations, and scattering processes. These findings open a new pathway for controlling heat flow in magnetic systems. This review highlights the important role of thermal transport studies in advancing our understanding of magnetic materials and offers valuable insights into the development of functional thermal devices utilizing these materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100156"},"PeriodicalIF":0.0,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Harnessing thermoelectric efficiency in Germanium-Based Janus monolayers: A theoretical perspective","authors":"Shivani Saini ,&nbsp;Anup Shrivastava ,&nbsp;Sanjai Singh ,&nbsp;Jost Adam","doi":"10.1016/j.mtelec.2025.100154","DOIUrl":"10.1016/j.mtelec.2025.100154","url":null,"abstract":"<div><div>With rapid industrialization and increasing energy demand, thermoelectric materials emerge as key players in transforming waste heat into clean, renewable energy, offering a sustainable solution to the global energy crisis. Despite several serious attempts in the last few decades, the full potential of thermoelectric technology has not yet been exploited because of menial thermoelectric performances from conventional materials. This study uses a combination of quantum and semi-classical computational approaches to investigate the electronic and thermoelectric behavior of Germanium-based (Ge₂AB (A/B=S, Se, Te)) Janus monolayers. Due to the broken inversion symmetry (compared to the trivial transition metal dichalcogenides), the investigated monolayers comprise unique E-k dispersion and phonon transport characteristics. These characteristics significantly enhance the thermoelectric performance by promoting multi-valleys and staggered band effects in the E-k dispersion and coupling acoustic and optical phonons in the phonon spectra. Phonon dispersion analyses show non-imaginary frequencies, confirming the investigated monolayers’ structural and dynamic stability. The study focuses on critical thermoelectric parameters such as the Seebeck coefficient, electrical/thermal conductivity, thermo-power, and thermoelectric figure of merit for the proposed set of Janus monolayers. It reveals that these Janus monolayers exhibit ultra-low lattice thermal conductivity (due to the combined effect of softening of phonon modes and large-scattering due to heavier atoms) and high power factors (due to the large number of charge carriers available for the transport in the multi-valleys present near the Fermi level). The calculated results estimate the highest thermoelectric figure of merit (up to 3.52) and significantly low-lattice thermal conductivity 0.03<!--> <!-->W<!--> <!-->m⁻¹ <!-->K⁻¹ for Janus monolayer Ge₂SeTe. The significant findings demonstrate the potential of Ge₂AB (A/B=S, Se, Te) monolayers in highly efficient energy harvesting technologies. They emphasize their potential in next-generation thermoelectric devices, which significantly affect energy conversion technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100154"},"PeriodicalIF":0.0,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multicomponent soft magnetic alloys for soft magnetic composites: A review","authors":"Min Nie ,&nbsp;Chunyun Jiang ,&nbsp;Yiting Yang ,&nbsp;Bang Zhou ,&nbsp;Zhiyong Chen ,&nbsp;Guangping Jia ,&nbsp;Zhicheng Li ,&nbsp;Chunlei Dai ,&nbsp;Jiayi He ,&nbsp;Hai Guo","doi":"10.1016/j.mtelec.2025.100153","DOIUrl":"10.1016/j.mtelec.2025.100153","url":null,"abstract":"<div><div>Soft magnetic multicomponent alloys (MCAs) are emerging materials, including amorphous, nanocrystalline, and high-entropy alloys, exhibit not only excellent soft magnetic properties but also high service performances such as high temperature stability, high corrosion resistance and high mechanical properties. They are promising candidates for the key materials of the components for power devices with high power density and high energy conversion efficiency at high frequency. However, despite the attractive properties of bulk soft magnetic MCAs, the soft magnetic composites (SMCs) based on the MCAs have not exhibited significant advantage in comparison to those based on the traditional alloys, which limits their wide applications. With urgent requirement in developing high-performance power inductors, understanding the fundamental behavior and underlying physics of soft magnetic MCAs is very important. In this review, the current status of soft magnetic MCAs and the SMCs based on MCAs is summarized. Novel preparation processes different from the conventional ones are discussed. The relationship among the preparation, properties and microstructure of the MCAs are also emphasized. The current status and existing challenges for the fabrication of SMCs based on soft magnetic MCAs are critically discussed. The potential solutions such as novel powdering techniques, forming methods, magnetic-thermal coupling processes and insulation coating approaches are proposed for future development.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100153"},"PeriodicalIF":0.0,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143830081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in stimuli-responsive materials for intelligent electronics","authors":"Siyao Chen ,&nbsp;Hongqiu Wei ,&nbsp;Cheng Lin ,&nbsp;Hanxing Zhao ,&nbsp;Chaoqun Dong ,&nbsp;Xue Wan","doi":"10.1016/j.mtelec.2025.100152","DOIUrl":"10.1016/j.mtelec.2025.100152","url":null,"abstract":"<div><div>Stimuli-responsive materials, which undergo variations in their physical or chemical properties in response to external stimuli, have recently drawn increasing attention for their integration into next-generation intelligent electronics. Their capabilities to adjust shapes and properties, combined with advanced manufacturing technologies, are paving the way toward innovative electronic devices with unprecedented levels of adaptability and multifunctionality. In this review, we summarize recent progress in stimuli-responsive materials for intelligent electronic devices. We highlight various material design strategies, their corresponding stimuli-triggered responses, and applications in sensors, actuators, and energy systems. Finally, we discuss current challenges focusing on multi-functional, integrated, and reconfigurable electronics and outline future trends that inspire the next-generation devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100152"},"PeriodicalIF":0.0,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143848657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Porous semiconductor-based transistors and their applications","authors":"Yimin Sun ,&nbsp;Ting Wang ,&nbsp;Jiali Luo ,&nbsp;Jianhua Chen ,&nbsp;Wei Huang ,&nbsp;Junqiao Ding","doi":"10.1016/j.mtelec.2025.100151","DOIUrl":"10.1016/j.mtelec.2025.100151","url":null,"abstract":"<div><div>Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100151"},"PeriodicalIF":0.0,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143850534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance CuI-based ultraviolet phototransistors","authors":"Mingyang Wang ,&nbsp;Huihui Zhu ,&nbsp;Ao Liu","doi":"10.1016/j.mtelec.2025.100149","DOIUrl":"10.1016/j.mtelec.2025.100149","url":null,"abstract":"<div><div>Transparent copper iodide (CuI) holds significant promise as an emerging semiconductor for high-performance ultraviolet (UV) photodetectors, owing to its high mobility and suitable band gap, which enables efficient UV absorption while suppressing visible light. However, its intrinsic high hole concentration results in extremely high dark current, leading to low signal-to-noise ratio and detectivity. To address this issue, we deposited a Zn-doped CuI channel and fabricated phototransistors using a low-cost solution process at low temperatures. By modulating the hole concentration and involving gate bias modulation, we achieved superior figures of merit for 365 nm UV detection. These include a high responsivity of 1.9 × 10³ A/W, a detectivity of up to 2.8 × 10¹⁴ Jones, and an impressive external quantum efficiency of 6.4 × 10⁵ %. To the best of our knowledge, these values represent the highest performance among all reported CuI-based photodetectors. Our results demonstrate the significant potential of CuI phototransistors for future large-area, low-cost ultraviolet detection systems.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100149"},"PeriodicalIF":0.0,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143738571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Diameter dependent synaptic behaviors of III-V nanowires for neuromorphic image denoising","authors":"Zeqi Zang,&nbsp;Zixu Sa,&nbsp;Pengsheng Li,&nbsp;Guangcan Wang,&nbsp;Mingxu Wang,&nbsp;Yanxue Yin,&nbsp;Feng Chen,&nbsp;Zai-xing Yang","doi":"10.1016/j.mtelec.2025.100148","DOIUrl":"10.1016/j.mtelec.2025.100148","url":null,"abstract":"<div><div>Diameter is an important geometry parameter for III-V nanowires (NWs) in electronics, optoelectronics and neuromorphic computing. In this work, the electrical stability and synaptic behaviors of thin and thick GaSb NWs are studied in detailed. With the higher surface-to-volume ratio and much more Sb-O bonds on the surface, the thin NWs possess heavier surface states than thick NWs. As a result, the thin NW filed-effect-transistors (NWFETs) display worse electrical stability and more obvious synaptic behaviors. These impressive phenomena result from the surface states related carrier trapping and detrapping processes. By taking use of the thin and thick NWFETs together for neuromorphic image, the recognition accuracy can reach to 93.9 %, which is much higher than that of individual thin (92.1 %) or thick (84.4 %) NWFETs. This work offers new insight into the modulation of surface states for the coming neuromorphic computing by using the global NWFETs.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100148"},"PeriodicalIF":0.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143734927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid fabrication of flexible copper-plated circuit boards on cotton fabrics and conductive threads for textile materials using pencil-drawn technique","authors":"Vinit Srivastava ,&nbsp;Shivam Dubey ,&nbsp;Rahul Vaish ,&nbsp;Bharat Singh Rajpurohit","doi":"10.1016/j.mtelec.2025.100141","DOIUrl":"10.1016/j.mtelec.2025.100141","url":null,"abstract":"<div><div>This study presents an approach for fabricating flexible and stable electroplated circuits directly onto fabric and thread. We achieve this through a simple method. Pencil-drawn patterns on cotton fabric are followed by copper electroplating in a copper sulfate solution. This method eliminates the need for complex pre-treatment and lithography techniques, thus enabling rapid and on-site circuit development. This research investigated the influence of different pencil grades, drawing frequency, and plating time on the overall conductivity and flexibility of the fabric-based circuits. The electroplated copper demonstrated exceptional bending and thermal stability, maintaining consistent conductivity over a wide bending range (-180° to 180°), with minimal linear resistance change after extreme twisting. Furthermore, the fabricated circuits functioned effectively as Light Dependent Resistor (LDR) based Plated Circuit Boards (PCB), demonstrating robustness and practical potential. The fabrication of conductive threads has also been explored by electroplating graphite threads. These threads displayed remarkable flexibility, maintaining consistent conductivity (0.5 Ω/cm) even under tight knots. The copper-plated textile exhibited stable resistance: 0.6 Ω across 22 °C to 55 °C and 0.5 Ω/cm under bending angles from -180° to +180°. It endured 1000 folding cycles, with resistance increasing slightly to 1.3 Ω. Furthermore, this work shows that the flexible PCBs are resistant to folding stress, environmentally friendly, and disposable, which is a significant step toward sustainable electronics. The results of this study hold significant potential applications in textile-based electrical systems, wearable electronics, and sensors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100141"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection","authors":"Md. Zahid Hasan ,&nbsp;Rezaur Raihan ,&nbsp;Nur Kutubul Alam ,&nbsp;Md. Rejvi Kaysir ,&nbsp;Md. Shaharuf Islam ,&nbsp;M. A. Parvez Mahmud","doi":"10.1016/j.mtelec.2025.100144","DOIUrl":"10.1016/j.mtelec.2025.100144","url":null,"abstract":"<div><div>The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (&gt; 539 mV for <em>k</em> = 1 to <em>k</em> = 15) compared to the p-type (-101 mV for <em>k</em> = 1 to <em>k</em> = 4, and 74.59 mV for <em>k</em> = 4 to <em>k</em> = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant <em>k</em> = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher I_on/I_off ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100144"},"PeriodicalIF":0.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}