Materials Today Electronics最新文献

{"title":"Recent advances in graphene-based flexible tactile sensor","authors":"Wenkai Zhu,&nbsp;Yukai Zhou,&nbsp;YongChang Jiang,&nbsp;Wen Cheng,&nbsp;Lijia Pan,&nbsp;Yi Shi","doi":"10.1016/j.mtelec.2025.100185","DOIUrl":"10.1016/j.mtelec.2025.100185","url":null,"abstract":"<div><div>Flexible tactile sensor is a new type of wearable device that mimics the sensory capabilities of human skin through flexible electronic technology and has broad application prospects in areas such as medical health monitoring, human-computer interaction, and robotics. In recent years, graphene and its derivatives have gradually become important materials for breaking through the performance bottlenecks of sensor due to their unique physical and chemical properties. This paper reviews the recent research of graphene-based flexible tactile sensor: (1) The material characteristics of graphene and its derivatives (GO, RGO) in sensor design; (2) Research of graphene-based flexible sensors based on piezoresistance, piezoelectricity, capacitance, and field effect transistor (FET); (3) The current research directions of graphene-based flexible sensors, including the development of composite materials, bionic structure design, AI-driven functional design, multimodal sensing and structural optimization. While previous reviews have detailed the material and mechanical aspects of graphene sensor, this review provides a unique perspective by focusing on the integration of Artificial Intelligence (AI) throughout the \"material-structure-function\" framework, revealing the role of AI algorithms in enhancing the sensitivity, stability, and functionality. Finally, this paper analyzes the current existing problems of graphene-based flexible tactile sensor and proposes a series of positive outlooks.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100185"},"PeriodicalIF":7.4,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145738838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in Interface-induced photomultiplication-type organic photodetectors: device physics, design strategies and multifunctional applications","authors":"Zitong Zhang ,&nbsp;Zhuming Liu ,&nbsp;Qingzhen Bian","doi":"10.1016/j.mtelec.2026.100196","DOIUrl":"10.1016/j.mtelec.2026.100196","url":null,"abstract":"<div><div>Photomultiplication-type organic photodetector (PM-OPD), which converts the faint photon signals into amplified photocurrents, combines the benefits of intrinsic solution-processability and tailorable spectral response inherited from organic active materials, as well as compact footprint without external pre-amplifiers. Density and distribution of engineered traps within and nearby photoactive layers are keys for efficient PM behaviors in PM-OPDs, which induces trap-induced band bending and facilitates unobstructed carrier injection via the tunneling effect. Hitherto, incorporation of trap states inside photosensitive layer by doping materials or applying a disproportionate electron donor-acceptor ratio within active layer is the widely used method to fabricate PM-OPDs. Despite the great performance enhancements in these PM-OPDs, high bias voltage and slow response speed severely limit their commercial applications. Furthermore, the absence of carrier blocking layers leads to an increase in dark current, which eventually elevates noise level and results in a lower detectivity for weak light signals. To enhance PM device performance, various interface and morphology engineering strategies have been developed, alongside novel multifunctional devices for diverse applications. In this review, we outline recent progress in constructing high-performance PM-OPDs via interface engineering and vertical morphology control of the active layer, focusing on smart structural design and advances in stacking architectures for multifunctional applications. This review not only introduces the latest advances in fabrication strategies and device mechanisms for stacked PM-OPDs, but also provides significant insights into the fabrication of multifunctional applications based on these engineered PM-OPDs, including dual-mode, dual-band devices with distinct spectral range and operation modes, micro-spectrometers, up conversion optical imagers that convert invisible light into visible emission and polarization detectors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"15 ","pages":"Article 100196"},"PeriodicalIF":7.4,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146038114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on the application and flux pinning of practical high-temperature superconductors","authors":"Jiaxin Chang ,&nbsp;Shengnan Zhang ,&nbsp;Wen Zhang ,&nbsp;Jixing Liu ,&nbsp;Qingyang Wang ,&nbsp;Fang Yang ,&nbsp;Chengshan Li ,&nbsp;Jianfeng Li ,&nbsp;Pingxiang Zhang","doi":"10.1016/j.mtelec.2025.100182","DOIUrl":"10.1016/j.mtelec.2025.100182","url":null,"abstract":"<div><div>Superconducting materials exhibit the zero-resistance effect, the Meissner effect, and the quantum tunneling effect (Josephson effect). Therefore, they possess profound practical significance and immense developmental prospects in diverse domains, such as electric power, healthcare, transportation, quantum computing, energy, national defense and scientific experimentation. The critical current density (<em>J</em>_c) serves as the fundamental metric for evaluating the current carrying performance of superconducting materials in practical applications, which is predominantly influenced by three factors, namely the intrinsic physical properties, intergranular connectivity, and flux pinning performance. Among them, the flux pinning performance is the significant parameter of superconducting materials to determine the current carrying capacity under magnetic field. Therefore, the enhancement of flux pinning properties has become a central focus in contemporary superconducting research. This review briefly introduced the theoretical foundations of flux pinning mechanisms in superconducting materials. Furthermore, a comparative analysis was conducted on the introduction technologies of artificial pinning centers, including particle irradiation, elemental doping and second-phase particle embedding, across high-temperature superconducting material of BSCCO, REBCO, MgB₂, and iron-based superconductors. Finally, the prospects for the enhancement strategies of flux pinning in practical high-temperature superconducting materials were discussed.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100182"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145623822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal oxide semiconductor-based negative capacitance field-effect transistors with a sub-threshold swing of below 30 mV/dec","authors":"Ji Hyeon Min ,&nbsp;Seong Cheol Jang ,&nbsp;Kyong Jae Kim ,&nbsp;You Seung Rim ,&nbsp;Hyun-Suk Kim","doi":"10.1016/j.mtelec.2025.100178","DOIUrl":"10.1016/j.mtelec.2025.100178","url":null,"abstract":"<div><div>Effective data processing and low power consumption of electronic devices have been demanded for artificial intelligence technologies. Here, we report IGZO-based negative capacitance field-effect transistors (IGZO NC-FETs) with <em>stacked gate dielectrics</em> composed of ferroelectric Hf_0.5Zr_0.5O₂ and high-<em>k</em> Al₂O_3. The manifestation of negative capacitance behavior was confirmed by the suppression of the thermionic subthreshold swing limit resulted in the improvement of low-power switching performance. The IGZO NC-FET occurs below 30 mV/dec of a steep subthreshold swing (SS), exceptionally across a gate bias range of ±1 V. Furthermore, high-<em>k</em> Al₂O₃ as a stabilizing layer suppresses the hysteresis, effectively coupled with a conventional ferroelectric layer.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100178"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lateral photovoltage in natural pyrite: Mechanism, model, and characteristic","authors":"Xuecong Liu,&nbsp;Kun Zhao,&nbsp;Yalin Zhang,&nbsp;Xiaotong Xu,&nbsp;Xinyang Miao","doi":"10.1016/j.mtelec.2025.100183","DOIUrl":"10.1016/j.mtelec.2025.100183","url":null,"abstract":"<div><div>The organic, inorganic and impurity interactions in natural pyrite significantly affects the motion state of non-equilibrium charge carriers, resulting in differences in its lateral photovoltage (LPV) compared to conventional semiconductors. In this paper, the LPV of natural pyrite was studied to address the issues of incomplete LPV mechanism and unclear external factors. The generation, recombination, and diffusion mechanisms of photo generated carriers in natural pyrite were elucidated, and a theoretical model of LPV variation with irradiation time and position was established by the trap effect and Schottky barrier at the metal-pyrite contact. Under the irradiations of continuous and pulsed lasers, the LPV of natural pyrite is consistent with the fitting curve of the LPV theoretical model. When laser irradiates the surface electrode of natural pyrite, the Schottky barrier formed by the contact between metallic silver and pyrite enhances the LPV. When the laser irradiates the area between two electrodes, there is a linear relationship between LPV and the laser irradiation position, and the position sensitivity decreases with increasing electrode spacing, while the LPV does not change with the laser irradiation position outside of the electrode and the stable LPV value is positively correlated with the electrode spacing. The results of two-dimensional position response shows that LPV exhibits the linearity and saddle shaped dependences on the irradiation position along <em>x</em> and <em>y</em> directions, respectively. Furthermore, the bias current effectively improves the response rate of LPV. This study will enrich the foundation of the photoelectric effect of natural pyrite, and be expected to help reveal its role in geology and the origin of life.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100183"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145623823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors","authors":"Che-Yi Lin ,&nbsp;Yu-Ching Kuo ,&nbsp;I-Chen Liu ,&nbsp;Feng-Shou Yang ,&nbsp;Yuan-Ming Chang ,&nbsp;Po-Wen Chiu ,&nbsp;Toshihide Nabatame ,&nbsp;Mengjiao Li ,&nbsp;Kazuhito Tsukagoshi ,&nbsp;Yen-Fu Lin","doi":"10.1016/j.mtelec.2025.100171","DOIUrl":"10.1016/j.mtelec.2025.100171","url":null,"abstract":"<div><div>Oxygen vacancies (<em>V</em>_O) critically influence the electronic properties and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Here, we investigate the impact of oxygen partial pressure during film deposition on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO) TFTs. By adjusting the Ar:O₂ ratio (11:1, 8:4, and 6:6), we observe a shift from interface-limited to bulk-scattering-dominated transport. Higher O₂ pressure leads to increased subthreshold swing (SS), positive threshold voltage (<em>V</em>_th) shifts, and larger current fluctuations, suggesting greater charge trapping and mobility degradation. Low-frequency noise (LFN) analysis further reveals a shift in the dominant noise mechanism: interface charge trapping dominates at low O₂ pressure, while bulk carrier scattering prevails at high O₂ pressure. The extracted trap density (<em>N</em>_it) increases by nearly two orders of magnitude, confirming the role of fully oxidized indium atoms in the conducting channel as charge-scattering centers. These findings establish oxygen pressure as a key parameter for balancing interface and bulk effects in AOS TFTs and provide a pathway for optimizing device performance and stability in next-generation oxide electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100171"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of an analytical tool to design photovoltaic solar cells: Analysis in outer space conditions","authors":"Miguel Eduardo Pereira Gonçalves ,&nbsp;P. Mendonça dos Santos ,&nbsp;António Baptista ,&nbsp;Marcelino dos Santos ,&nbsp;João Paulo N. Torres ,&nbsp;Ricardo A. Marques Lameirinhas","doi":"10.1016/j.mtelec.2025.100176","DOIUrl":"10.1016/j.mtelec.2025.100176","url":null,"abstract":"<div><div>Various well established solar cell simulation software are presently available; however, they are often closed source, requiring costly licenses, or general-purpose simulation software. The main objective of this work is the development of an analytical tool to model and simulate solar cells, with particular emphasis in space applications. The software was constructed in Python using object-oriented programming by applying the equivalent two-diode electrical model, semiconductor physics, and optical modeling. It was designed to simulate both single- and multi-junction solar cells with additional non-textured anti-reflective coatings and protective layers. A method was also implemented to simulate the effects of ionizing radiation. The program was validated by data comparison with established software and commercially available space solar cells. In both cases, the tool developed was found to have obtained similar results, which seem to indicate that the program is reasonably accurate. Furthermore, three studies were carried out on: Anti-reflection coatings and protective layers, Ionizing-radiation effects and Multi-junction solar cells. In the anti-reflection coatings and protective layers study, it was possible to verify how differences in the type and number of layers affect performance. With the ionizing radiation effects study, the accuracy of the model was tested against research article data. The multi-junction study has shown how important the appropriate selection of semiconductor material, doping, and thickness is to mitigate losses and improve cell performance.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100176"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlled growth of Mn1-xZnxFe2O4 ferrite films and opto-electromagnetic properties of two-dimensional graphene/ferrite heterojunction devices","authors":"Dainan Zhang,&nbsp;Xinkai Xu,&nbsp;Yida Lei,&nbsp;Jie Li,&nbsp;Tianlong Wen,&nbsp;Zhongyuan Zhang,&nbsp;Huaiwu Zhang","doi":"10.1016/j.mtelec.2025.100181","DOIUrl":"10.1016/j.mtelec.2025.100181","url":null,"abstract":"<div><div>Spinel ferrite thin films have attracted the attention of a new generation of opto-electromagnetic multifunctional integrated devices due to their excellent magnetic semiconductor properties and tunable wide bandgap. In this paper, a novel [graphene/Mn_1-xZn_xFe₂O₄/SiO₂/p-Si] heterojunction field-effect transistor (<em>x</em> = 0.45—0.65) is designed, an n-type spinel Mn_1-xZn_xFe₂O₄ (MnZn) magnetic semiconductor film is grown on a SiO₂/p-Si substrate, and the saturation magnetization and conductivity of the ferrite film are controlled by doping amount x and annealing temperature, and then a monolayer of graphene film is transplanted on its surface through a wet transfer process. The experimental results show that the negative gate voltage exerts a significant modulation effect on both the source-drain current and the photocurrent in the device. This is mainly due to the change in the probability of interband electronic transitions in the graphene film due to the magnetic moment distribution of the MnZn film, resulting in an abrupt change in the drain resistance. The infrared optoelectronic performance test further verified the migration and transformation mechanisms of electrons and photoelectrons under electrical, magnetic and optical fields in graphene/MnZn heterojunction. In addition, terahertz phase shift testing proves that the valence and conduction bands of graphene form multiple secondary energy levels, which can regulate the band gap of the heterojunction. These results will pave the way for field-effect transistors to be modulated not only in optical fields, but also as multifunctional devices in electric and magnetic fields.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100181"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145623589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Artificial intelligence for post-moore field-effect transistors: a review and perspective","authors":"Xiang Li,&nbsp;Nan Jiang,&nbsp;Wenhan Zhou,&nbsp;Xiaoyi Zhang,&nbsp;Yang Hu,&nbsp;Shuo Wang,&nbsp;Huipu Wang,&nbsp;Hengze Qu,&nbsp;Haibo Zeng,&nbsp;Shengli Zhang","doi":"10.1016/j.mtelec.2025.100172","DOIUrl":"10.1016/j.mtelec.2025.100172","url":null,"abstract":"<div><div>As Moore’s Law approaches its fundamental physical limits, the development of post-Moore field-effect transistors (FETs) has emerged as a critical pathway to sustain the advancement of semiconductor technology. Artificial intelligence (AI), with its unparalleled capabilities in data-driven modeling, optimization, and predictive analytics, is revolutionizing the design, simulation, and fabrication of next-generation FETs. This review systematically examines the methodological frameworks, algorithmic strategies, and multidimensional applications of AI in FETs research, with particular emphasis on high-throughput screening and performance prediction of channel materials, gate dielectrics, and electrode materials, alongside device architecture optimization. Furthermore, we highlight future opportunities at the intersection of AI to redefine the frontiers of post-Moore electronics. This review aims to inspire multidisciplinary efforts toward AI-empowered FET innovation, bridging the gap between computational intelligence and semiconductor engineering for sustainable technological progress.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100172"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Angle-sensitive metamaterial based on one-dimensional electrostatic scanning micro-mirror","authors":"Xuyang Gao ,&nbsp;Zonghong Wu ,&nbsp;Xi Li ,&nbsp;Yuxin Liu ,&nbsp;Yu-Sheng Lin","doi":"10.1016/j.mtelec.2025.100180","DOIUrl":"10.1016/j.mtelec.2025.100180","url":null,"abstract":"<div><div>Dynamic control of terahertz (THz) waves is crucial for next-generation communication and sensing systems, yet achieving this through angular tuning often requires bulky and complex mechanical setups. A design of angle-sensitive metamaterial (ASM), employing the one-dimensional electrostatic scanning micro-mirror (1D-ESMM) as a tunable platform, which is proposed with dual-resonance at 0.5 THz and 2.26 THz. This integrated platform offers a novel solution for high-speed, dynamic control over the incident angle of the THz wave, achieving a maximum tilt angle of ±26.90°. This angular control enables significant modulation of the ASM's optical response. The reflection can be tuned from 81.9% down to 3.5% by varying the incident angle. Furthermore, the device exhibits polarization-dependent characteristics, allowing it to change between single- and dual-resonance states. These results indicate the potential applications of the proposed design in optical imaging, sensing, detecting and communication systems.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"14 ","pages":"Article 100180"},"PeriodicalIF":7.4,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145363415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}