Materials Today Electronics最新文献

{"title":"Graphene metasurfaces: Advances in lens applications, design strategies, and fabrication techniques","authors":"Meisam Esfandiari,&nbsp;Xiaojing Lv,&nbsp;Shaghayegh Chamani,&nbsp;Yang Yang","doi":"10.1016/j.mtelec.2025.100140","DOIUrl":"10.1016/j.mtelec.2025.100140","url":null,"abstract":"<div><div>This review comprehensively examines the recent advancements in graphene-based metasurface lenses, shedding light on their innovative design principles, advanced manufacturing techniques, and superior optical properties. Graphene's exceptional electrical, mechanical, and optical characteristics, combined with the versatile functionality of metamaterials and metasurfaces, have led to the development of highly efficient and dynamic lens systems. These lenses demonstrate remarkable capabilities, including tunable focal lengths, enhanced light modulation, and improved photodetection sensitivity. Such properties render them highly suitable for transformative applications in diverse fields like high-resolution imaging, precision sensing, and next-generation telecommunications. The review provides an in-depth analysis of the state-of-the-art methods used in the fabrication of these lenses, such as chemical vapor deposition, advanced lithography, and nanomanufacturing, to achieve nanoscale precision and functional integration. Moreover, the challenges associated with large-scale production scalability, fabrication techniques' complexity, and graphene's long-term stability under varying environmental conditions are critically examined. In exploring these aspects, the review identifies key directions for future research, emphasizing the need for interdisciplinary collaboration to overcome current limitations. By addressing these challenges and leveraging advancements in material science and nanotechnology, graphene-based metasurface lenses have the potential to revolutionize the future of optical lens systems and photonic technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100140"},"PeriodicalIF":0.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, surface, electrical and UVC sensing properties of high temperature RF sputtered gallium oxide thin films","authors":"Sidhant Sharma ,&nbsp;Hilal Nagib ,&nbsp;Phuong Y. Le ,&nbsp;Martin W. Allen ,&nbsp;Anthony S. Holland ,&nbsp;Jim G. Partridge ,&nbsp;Hiep N. Tran","doi":"10.1016/j.mtelec.2025.100139","DOIUrl":"10.1016/j.mtelec.2025.100139","url":null,"abstract":"<div><div>Gallium oxide thin films have been deposited on a-, c-, r- plane sapphire and amorphous Si₃N₄ at 800 °C by RF sputtering from a 99.99 % purity Ga₂O₃ target then characterised structurally, optically and electrically. A fixed process pressure of 3.0 mTorr was employed with O₂:Ar ratios of 0:1 (0 % O₂), 1:18 (5 % O₂), 1:9 (10 % O₂) and 3:17 (15 % O₂). X-ray diffractograms attributable to β-Ga₂O₃ were collected from the films grown on a- and c- plane sapphire. The highest crystallinity was observed in the films grown on c-plane sapphire. Ga₂O₃ films on r-plane sapphire and Si₃N₄ produced no diffracted peaks and were deemed to be amorphous or nanocrystalline. Ga 3d X-ray photoelectron spectra showed only Ga-O bonding with no evidence of Ga-Ga bonding, even in the films deposited with only Ar introduced to the chamber. Direct optical bandgaps exceeding 5.0 eV were observed in the films on a- and c- plane sapphire. Valence band spectra showed the valence band maxima (VBM) and Fermi level (FL) were separated by ∼3 eV in the Ga₂O₃ films on a- and c- plane sapphire whilst films on r-plane sapphire exhibited VBM - FL gaps of ∼2.5 eV, indicative of low shallow impurity/defect doping density, most likely due to oxygen vacancies. Selected films were incorporated into metal-semiconductor-metal UV-C detectors. Solar-blind detection was confirmed and the maximum measured UV-C /dark current ratios (I_UVC:I_dark) exceeded 10³:1.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100139"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced refractive index sensing through ultra-short pulse compression in hollow core photonic crystal fiber","authors":"Sheikh Montasir Mahbub,&nbsp;Abdullah Al Mahmud Nafiz,&nbsp;Rakibul Hasan Sagor","doi":"10.1016/j.mtelec.2025.100137","DOIUrl":"10.1016/j.mtelec.2025.100137","url":null,"abstract":"<div><div>This manuscript investigates the propagation of ultra-short pulses through hollow-core photonic crystal fibers (HC-PCF) and explores their application as high-sensitivity refractive index sensors. The unique guiding properties of HC-PCFs, combined with the ability to confine light within the hollow core, enable enhanced light-matter interactions. When exposed to intense light, these interactions can demonstrate nonlinear optical phenomena, such as pulse compression, which has been utilized here as a tool for detecting changes in refractive index. The HC-PCF has been designed to allow testing materials with refractive indices ranging from 1.4 to 1.45 to be placed in the core, where ultra-short pulses centered at 1550 nm with a duration of 1 picosecond and an input power of 1 KW, are sent from one end to leverage the nonlinear optical properties. By leveraging these nonlinear phenomena, it has been demonstrated that HC-PCFs exhibit unique attributes when the testing materials inside the core have varying refractive indices. Employing this novel technique, unique compression sensitivity and significant power upsurges have been achieved for the materials under test (MUT) with different refractive indices. Unlike the refractive index sensing methods in practice, this novel technique works based on lesser detection parameters and offers improved sensitivity and selectivity. The proposed method has achieved a minimum sensitivity of 11.6 %, which means the pulse is compressed by a factor of nine, and the maximum power surge recorded is 2313.918 W. This innovative approach opens new avenues for developing advanced sensing systems using HC-PCFs in fields such as environmental monitoring, bio-sensing, and chemical detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100137"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Roadmap on metal-halide perovskite semiconductors and devices","authors":"Ao Liu ,&nbsp;Jun Xi ,&nbsp;Hanlin Cen ,&nbsp;Jinfei Dai ,&nbsp;Yi Yang ,&nbsp;Cheng Liu ,&nbsp;Shuai Guo ,&nbsp;Xiaofang Li ,&nbsp;Xiaotian Guo ,&nbsp;Feng Yang ,&nbsp;Meng Li ,&nbsp;Haoxuan Liu ,&nbsp;Fei Zhang ,&nbsp;Huagui Lai ,&nbsp;Fan Fu ,&nbsp;Shuaifeng Hu ,&nbsp;Junke Wang ,&nbsp;Seongrok Seo ,&nbsp;Henry J. Snaith ,&nbsp;Jinghui Li ,&nbsp;Yong-Young Noh","doi":"10.1016/j.mtelec.2025.100138","DOIUrl":"10.1016/j.mtelec.2025.100138","url":null,"abstract":"<div><div>Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100138"},"PeriodicalIF":0.0,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143211787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Overview of emerging electronics technologies for artificial intelligence: A review","authors":"Peng Gao ,&nbsp;Muhammad Adnan","doi":"10.1016/j.mtelec.2025.100136","DOIUrl":"10.1016/j.mtelec.2025.100136","url":null,"abstract":"<div><div>This paper shows the short- and long-term electronics technologies emerging as the enablers of next-generation AI systems and focuses on rapidly developing technologies with promise toward enabling the new AI revolution, such as neuromorphic, quantum computing and edge AI processors. These technologies are key to improving the computational power, energy efficiency, and scalability required in AI solutions across healthcare, autonomous systems, and better endeavours. Neuromorphic computing works similarly to the brain's neural configuration to build a more energy-efficient AI system by simulating biological functionality, while quantum computing is ubiquitous as the next stage of problem-solving systems in AI and exponentially increases computational speed and functionality. Finally, Edge AI processors play an important role in real-time AI decision-making, especially in environments with limited power and space, as they allow data to be processed at the original point of generation. Of course, although these technologies demonstrate great potential, there are still obstacles to overcome for subtle hardware-software integration, architecture scalability and high energy consumption. This study highlights sustainable hardware design as an essential solution to these challenges, discussing low-power chips, AI accelerators and energy-efficient designs that allow devices to run at scale without performance liabilities. The paper also highlights quantum and neuromorphic computing—which mimics the structure and function of biological brains—as an important focus for overcoming limitations regarding scalability, allowing for novel architectures equipped to deal with the extremely large amounts of data required for future, more advanced AI models. We also discuss how these progressions can facilitate the creation of effective and scalable AI systems that support AI in addressing global challenges like environmental deterioration and resource limitations. Lastly, the paper highlights the importance of ongoing research and innovation in such areas to promote the evolution of AI systems that are resilient, scalable and energy-efficient in a way that ensures the long-term sustainability of AI and its implementation in various domains.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100136"},"PeriodicalIF":0.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-compact magnetoelectric sensor for femto-Tesla VLF signal reception","authors":"Cunzheng Dong ,&nbsp;Changxing Sun ,&nbsp;Lei Chen ,&nbsp;Yifan He ,&nbsp;Yisi Liu ,&nbsp;Bin Luo ,&nbsp;Nian X. Sun","doi":"10.1016/j.mtelec.2025.100135","DOIUrl":"10.1016/j.mtelec.2025.100135","url":null,"abstract":"<div><div>Very low-frequency (VLF) electromagnetic waves can penetrate dense, conductive media such as earth and saltwater, with minimal attenuation, enabling long-distance signal transmission via ionospheric reflection. These characteristics make VLF ideal for applications in submarine navigation, subterranean mapping, underground communication, and ionospheric remote sensing. Conventional VLF signal reception has relied on magnetic loop antennas due to their low noise performance; however, their large size and reduced sensitivity due to low quality factors (Q) limit their use in portable and compact applications, particularly in underwater and underground environments. To address these challenges, we propose an ultra-compact room-temperature extremely sensitive femto-tesla magnetic sensor based on a strain-mediated high-Q Metglas/Quartz magnetoelectric (ME) resonator operating at its electromechanical resonance (EMR) at 24.55 kHz for VLF signal reception. The Metglas/Quartz ME sensor demonstrates sensitivity and magnetic noise performance enhancement by an order of magnitude compared to conventional Metglas/PZT ME sensors, achieving an ultra-low equivalent magnetic noise level of 5 fT/Hz^1/2, owing to high magnetic permeability and magnetostriction of Metglas and the high quality factor of Quartz at EMR. Moreover, the Metglas/Quartz ME VLF receiver exhibits overwhelming near-field and far-field VLF signal reception capability, realizing a successful reception of a VLF signal ∼400 km away from the NAA VLF Transmitter Cutler, with a 55 dB signal-to-noise (SNR) ratio. The demonstrated ultra-compact high-Q Metglas/Quartz ME sensor capable of femto-tesla VLF signal reception shows significant improvements in magnetic sensing capability, size, power consumption, and cost compared to traditional magnetic loop antennas, making it a promising solution for portable VLF signal reception in challenging environments.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100135"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in organic semiconductor crystalline microwire field-effect transistors","authors":"Dao Duy Thanh ,&nbsp;Chia-Hsun Nieh ,&nbsp;Ting-Yu Wang ,&nbsp;Qun-Gao Chen ,&nbsp;Wen-Ya Lee ,&nbsp;Chu-Chen Chueh","doi":"10.1016/j.mtelec.2024.100134","DOIUrl":"10.1016/j.mtelec.2024.100134","url":null,"abstract":"<div><div>Organic crystal microwires (OCMs) have attracted much attention in the last decade due to their great potential for fabricating high-performance organic field-effect transistors (OFETs) and related applications including circuits, displays, sensors, as well as flexible and wearable devices. OCMs offer a number of advantages, such as long-range ordering, the absence of grain boundaries, low defect density, and flexibility. However, the preparation of tiny-sized, highly crystalline and homogeneous ribbons faces considerable challenges. Therefore, efforts have been made to develop new processing methods to produce high-quality OCMs. This perspective describes recent simple and widely used techniques for the preparation of OCMs, including both dry and wet processes. The advantages and limitations of these different techniques are discussed. In addition, we summarize recent advances in the performance of OCMs-based OFETs, comparing the charge-transporting properties of different preparation methods, including OCMs and thin films. Finally, the potential and future prospects of utilizing crystal microwires in perovskite FETs are also discussed.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100134"},"PeriodicalIF":0.0,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ferroelectric memristors based on double perovskite Bi2FeCoO6 for synaptic performance and human expression recognition storage","authors":"Dong-Ping Yang ,&nbsp;Wen-Min Zhong ,&nbsp;Jun Li ,&nbsp;Xin-Gui Tang ,&nbsp;Qi-Jun Sun ,&nbsp;Qiu-Xiang Liu ,&nbsp;Yan-Ping Jiang","doi":"10.1016/j.mtelec.2024.100133","DOIUrl":"10.1016/j.mtelec.2024.100133","url":null,"abstract":"<div><div>This study reports for the first time the application of double perovskite thin-film devices based on the Bi₂FeCoO₆ (BFCO) compound in non-volatile ferroelectric memristors. By spin-coating BFCO onto an N-type silicon (N-Si) substrate, a P-N junction was formed, yielding a thin-film device with ferroelectric properties. The device demonstrated a maximum polarization value of 46.09 μC/cm² and a high switching ratio of 293, along with excellent long-term stability (over 7 days) and high repeatability (1000 cycles). Furthermore, we investigated the synaptic characteristics of the device, including short-term plasticity, paired-pulse facilitation, and long-term potentiation/inhibition behaviors. By designing a confusion matrix recognition scenario with a binary neural network, we validated the potential of double perovskite ferroelectric memristors in intelligent learning applications. Additionally, leveraging the synaptic plasticity of the device, we developed a modal storage memory and recognition system for human emotions. This work not only provides new insights into the development of high-performance double perovskite ferroelectric memristors but also lays the foundation for optimizing synaptic performance in intelligent learning applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100133"},"PeriodicalIF":0.0,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Contact engineering for two-dimensional van der Waals semiconductors","authors":"Jiachen Tang,&nbsp;Shuaixing Li,&nbsp;Li Zhan,&nbsp;Songlin Li","doi":"10.1016/j.mtelec.2024.100132","DOIUrl":"10.1016/j.mtelec.2024.100132","url":null,"abstract":"<div><div>Two-dimensional (2D) semiconductors represent the most promising post-silicon channel materials for ultimate electronics. However, the unique atomic thickness renders them incompatible with traditional atomic doping technique through ion implantation and thermal activation, which poses a key challenge for constructing ohmic contacts with 2D semiconductors. In the last decade, constant efforts have been devoted to address this critical challenge. In this article, by casting light on the origins of contact resistance between electrodes and 2D semiconductors, we review various strategies of contact engineering for 2D van der Waals semiconductors and the steady progress achieved in this specific issue, in order to provide guidance for device design and integration of 2D semiconductors for next-generation electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100132"},"PeriodicalIF":0.0,"publicationDate":"2024-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semiconductor sensing surfaces via oxygen-injection treatment","authors":"Xiaowu Wang,&nbsp;Zhenggang Xue,&nbsp;Jiaqiang Xu","doi":"10.1016/j.mtelec.2024.100120","DOIUrl":"10.1016/j.mtelec.2024.100120","url":null,"abstract":"","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}