Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection

Md. Zahid Hasan , Rezaur Raihan , Nur Kutubul Alam , Md. Rejvi Kaysir , Md. Shaharuf Islam , M. A. Parvez Mahmud
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Abstract

The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (> 539 mV for k = 1 to k = 15) compared to the p-type (-101 mV for k = 1 to k = 4, and 74.59 mV for k = 4 to k = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant k = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher Ion/Ioff ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.

Abstract Image

用于无标记DNA检测的无结介质调制双栅GaNFET生物传感器的设计与分析
DNA杂交的研究跨越了各个科学领域,提供了从基因组学到诊断学和药理学的见解。传统的方法包括标记DNA,但创新的FET器件使用无标记技术。与传统方法相比,纳米级生物传感器具有更高的速度、灵敏度、成本效益和通用性。克服短通道效应(SCE)等挑战对于合成符合这些标准的生物传感器至关重要。以前的研究主要集中在无结双栅晶体管上,以减轻SCE和GaN作为高速,低功耗应用的通道材料。然而,由于介电常数和界面电荷效应的冲突,处理带负电荷的生物分子(如DNA)面临挑战。为了解决这些挑战,提出的纳米级生物传感器采用无结介质调制双栅GaN场效应晶体管(JL-DM-DG GaNFET)。该器件以氮化镓作为通道材料,有效地协同了相互冲突的介电常数和电荷效应。仿真结果表明,n型JL-DM-DG GaNFET对带负电荷的DNA具有显著的敏感性,阈值电压(>;k = 1至k = 15时为539 mV),而p型(k = 1至k = 4时为-101 mV, k = 4至k = 15时为74.59 mV)。具体来说,对于电荷密度,n型器件显示出更高的灵敏度(1.05 vs. 0.509),对于p型和介电常数k = 16 (n型灵敏度0.8 vs. p型灵敏度0.4)。此外,该器件显示出低亚阈值斜率(~ 60 mV/衰减)和更高的离子/ off比,表明更快的开关和更低的功耗。综上所述,所提出的n型JL-DM-DG GaNFET在高效可靠的DNA检测方面具有相当大的潜力。
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