Materials Today Electronics最新文献_第9页

Recent advances of transition radiation: Fundamentals and applications 跃迁辐射的最新进展:基础与应用

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100025

Ruoxi Chen , Zheng Gong , Jialin Chen , Xinyan Zhang , Xingjian Zhu , Hongsheng Chen , Xiao Lin

引用次数: 7

Enhancing the bandwidth of antennas using polymer composites with high dielectric relaxation 利用高介电弛豫聚合物复合材料增强天线带宽

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100026

Ilkan Calisir , Xiantao Yang , Elliot L. Bennett , Jianliang Xiao , Yi Huang

{"title":"Enhancing the bandwidth of antennas using polymer composites with high dielectric relaxation","authors":"Ilkan Calisir , Xiantao Yang , Elliot L. Bennett , Jianliang Xiao , Yi Huang","doi":"10.1016/j.mtelec.2023.100026","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100026","url":null,"abstract":"<div>We propose a concept using a frequency-dependent property (dielectric relaxation) of dielectric materials to enhance the bandwidth of the antenna widely used in wireless communications. The bandwidth enhancement can be achieved when a loading dielectric material with a relative permittivity that is inversely proportional to the frequency by the power of n. The bandwidth for a selected antenna example could be increased by 135% when the power n = 2. A solid material, composed of plasticized PVDF containing nano-sized silica particles, exhibiting dielectric relaxation of n = 0.52, is developed in order to prove the theoretical concept and used to test the performance of an example mobile phone antenna. The influence of hydrogen bonding on tuning the frequency-dependent power n in the developed composite material is verified. The bandwidth of the antenna was increased by 18% over the operating frequency band using a newly developed dielectrically relaxing material, n = 0.52 compared to the conventional non-relaxing material, n = 0.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Diffusion limiting layer induced tantalum oxide based memristor as nociceptor 扩散限制层诱导氧化钽基忆阻器作为伤害感受器

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100031

Debashis Panda , Yu-Fong Hui , Tseung-Yuen Tseng

引用次数: 1

Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices 用于无偏置磁体和可重构微波磁性器件的功能性纳米结构

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100008

Arabinda Haldar

{"title":"Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices","authors":"Arabinda Haldar","doi":"10.1016/j.mtelec.2022.100008","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100008","url":null,"abstract":"<div>Recent demonstrations of the reconfigurable microwave properties based on patterned magnetic nanostructures without any external bias magnetic field have been reviewed. Two main design strategies for the nanostructures have been discussed. Firstly, self-biased nanomagnetic networks and multilayer structures that possess two different remanent magnetic states are exploited. Different remanent states are associated with distinct microwave properties and they are within a nanosecond time scale by using a simple field initialization scheme. The dipolar coupling field and the demagnetization field variations have been attributed to the origin of the tunable microwave responses. Secondly, magnetic skyrmions have been explored for tunable microwave properties. In this regard, skyrmion size which is directly related to its resonant modes has been controlled by placing it at different positions in an engineered nanostructure with varying edge repulsions. Finally, an outlook on the future directions and scopes of bias-free microwave devices have been discussed. It is also outlined that such devices have potential implications for the logic and magnonic technologies beyond their applications for microwave magnetic devices.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000080/pdfft?md5=186e9e9e3e4678564e823ad89e014869&pid=1-s2.0-S2772949422000080-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Broadband Photodetection of Cd3As2: Review and Perspectives Cd3As2的宽带光探测：回顾与展望

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100007

Yunkun Yang , Faxian Xiu

引用次数: 3

Skin-Integrated, Stretchable Triboelectric Nanogenerator for Energy Harvesting and Mechanical Sensing 用于能量收集和机械传感的皮肤集成、可拉伸摩擦电纳米发电机

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100012

Ling Zhao, Zihong Lin, K. Lai

引用次数: 3

On functional boron nitride: Electronic structures and thermal properties 功能氮化硼的电子结构与热性能

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100005

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu

引用次数: 6

Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3 基于Sb2Se3的柔性短波红外光电探测器

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100011

Kanghua Li , Xuke Yang , Feifan Yang , Jungang He , Guangzu Zhang , Shenglin Jiang , Chao Chen , Jiang Tang

{"title":"Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3","authors":"Kanghua Li , Xuke Yang , Feifan Yang , Jungang He , Guangzu Zhang , Shenglin Jiang , Chao Chen , Jiang Tang","doi":"10.1016/j.mtelec.2022.100011","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100011","url":null,"abstract":"<div>One-dimensional antimony selenide (Sb2Se3), enjoying intriguing optoelectronic properties, has drawn extensive attention in solar cells and broadband photodetection. Limited by the bandgap, the reported Sb2Se3 photodetectors always focus on the detection of visible and near-infrared (<1050 nm). Extending the detection waveband can greatly enrich the applications of Sb2Se3 photodetectors. Extrinsic photoconduction is an attractive strategy for extending the detection waveband, for example, the extrinsic Si detector for short-wavelength or long-wavelength infrared detection. However, Sb2Se3 extrinsic photoconduction has not been reported yet. Herein, the extrinsic photoconduction, attributed to the intrinsic point defects, is observed in Sb2Se3 for the first time, which induced a broadened short-wavelength infrared detection of 1650 nm at room temperature. Furthermore, the Sb2Se3 photodetector is fabricated on a flexible polyimide substrate. Meanwhile, the Sb2Se3 photodetectors also demonstrate a fast response speed (rise of 9 µs and fall of 11 µs), a high linear dynamic range of 98 dB, and wide -3dB bandwidth of 163 kHz at 1300 nm. This extrinsic-photoconduction provides feasible design strategies to broaden the detection waveband of the Sb2Se3 photodetectors and can be extended to other chalcogenides.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000110/pdfft?md5=116391beadfdd9f4d9edce53df7dfd92&pid=1-s2.0-S2772949422000110-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Skin-integrated, stretchable triboelectric nanogenerator for energy harvesting and mechanical sensing 皮肤集成、可拉伸的摩擦电纳米发电机，用于能量收集和机械传感

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100012

Ling Zhao , Zihong Lin , King Wai Chiu Lai

{"title":"Skin-integrated, stretchable triboelectric nanogenerator for energy harvesting and mechanical sensing","authors":"Ling Zhao , Zihong Lin , King Wai Chiu Lai","doi":"10.1016/j.mtelec.2022.100012","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100012","url":null,"abstract":"<div>Due to the potential application of wearable electronics in human medical treatment and human machine interfaces, extensive investigations and research have been conducted recently. To provide sufficient and continuous power to the state-of-art flexible electronics, many wearable self-powered technologies have been developed. Triboelectric nanogenerators (TENGs) provide a prospective alternative option to efficiently transform mechanical energy during human daily movement into electricity, which can be utilized for motion capturing and energy harvesting. Here, we have developed a thin, skin-integrated stretchable triboelectric nanogenerator based on the contact-separation mode through a low-cost fabrication process. By adopting the serpentine designed Cu electrodes, the device has exhibited excellent flexibility and stretchability. To separate the two triboelectric layers, a flexible pillar array is built in the middle by screening printing, realizing the thin format of the TENG. Due to mechanical design, the TENG exhibits a wide pressure sensing range from ∼ 8.125 kPa to ∼ 43.125 kPa, corresponding to the open-circuit voltages ranging from ∼ 10 V to ∼ 80 V, allowing sensing to various external pressures, such as finger touching, tapping, and punching. At the external pressure of 43.125 kPa, the power output of the TENG could reach up to 300 μW/cm2. Under a constant tapping by fingers, the energy yielded by the device could light 40 LEDs. Furthermore, a 4 × 4 arrayed TENG-based pressure sensor was further fabricated and demonstrates its potential applications in human motion monitoring and tactile mapping.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000122/pdfft?md5=8f9f8662f5cde7decbe27e96e33ee548&pid=1-s2.0-S2772949422000122-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Ion-gating analysis on conduction mechanisms in oxide semiconductors 氧化物半导体导电机理的离子门控分析

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100010

Won Hyung Lee , YoungJun Yang , Junwoo Park , Sun Geun Yoon , Huding Jin , Donggun Lee , Junghyup Han , Yong Hyun Cho , Youn Sang Kim

{"title":"Ion-gating analysis on conduction mechanisms in oxide semiconductors","authors":"Won Hyung Lee , YoungJun Yang , Junwoo Park , Sun Geun Yoon , Huding Jin , Donggun Lee , Junghyup Han , Yong Hyun Cho , Youn Sang Kim","doi":"10.1016/j.mtelec.2022.100010","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100010","url":null,"abstract":"<div>The electric field-effect is one of the common methods to tune the conductivity of materials in semiconductor devices because it can control the accumulation or depletion of charge carriers. However, to efficaciously dominate the electrical properties of the semiconductor in such a way, the application of an external voltage through the gate is an inevitable condition. Here, we propose an ion-dynamics-driven (ionovoltaic) transducer focusing on a self-gated field-effect by ion adsorption at the solid–liquid interface (an ion-gating effect without applied electric field). Considering an effective resistance derived from the generated signal, we establish an equivalent circuit of the ion-gating field-effect transducer to specifically analyze the conduction behavior of traveling electrons in an amorphous indium tin oxide film. As a result, using water droplet flow, we provide a convenient method to identify inherent conduction mechanisms of amorphous oxide semiconductors. This analysis has great potential as a tool to leap forward into a new interdisciplinary approach covering interface science and solid-state physics from a peculiar concept based on the ion-gating effect.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000109/pdfft?md5=cb1e3107ddf094c9a5c837417b932586&pid=1-s2.0-S2772949422000109-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1