Materials Today Electronics最新文献

{"title":"Non-linear Hall effects: Mechanisms and materials","authors":"Arka Bandyopadhyay,&nbsp;Nesta Benno Joseph,&nbsp;Awadhesh Narayan","doi":"10.1016/j.mtelec.2024.100101","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100101","url":null,"abstract":"<div><p>This review presents recent breakthroughs in the realm of nonlinear Hall effects, emphasizing central theoretical foundations and recent experimental progress. We elucidate the quantum origin of the second-order Hall response, focusing on the Berry curvature dipole, which may arise in inversion symmetry broken systems. The theoretical framework also reveals the impact of disorder scattering effects on the nonlinear response. We further discuss the possibility of obtaining nonlinear Hall responses beyond the second order. We examine symmetry-based indicators essential for the manifestation of nonlinear Hall effects in time-reversal symmetric crystals, setting the stage for a detailed exploration of theoretical models and candidate materials predicted to exhibit sizable and tunable Berry curvature dipole. We summarize groundbreaking experimental reports on measuring both intrinsic and extrinsic nonlinear Hall effects across diverse material classes. Finally, we highlight some of the other intriguing nonlinear effects, including nonlinear planar Hall, nonlinear anomalous Hall, and nonlinear spin and valley Hall effects. We conclude with an outlook on pivotal open questions and challenges, marking the trajectory of this rapidly evolving field.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100101"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000135/pdfft?md5=c8c428c68d1f302a927171e35235b853&pid=1-s2.0-S2772949424000135-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140901468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bismuth-based ferroelectric memristive device induced by interface barrier for neuromorphic computing","authors":"Zhi-Long Chen,&nbsp;Yang Xiao,&nbsp;Yang-Fan Zheng,&nbsp;Yan-Ping Jiang,&nbsp;Qiu-Xiang Liu,&nbsp;Xin-Gui Tang","doi":"10.1016/j.mtelec.2024.100105","DOIUrl":"10.1016/j.mtelec.2024.100105","url":null,"abstract":"<div><p>The development of the Internet of Things (IoT) not only facilitates our lives but also dramatically grows data. Artificial synaptic devices appear to represent an emerging physical solution compared to the existing computational architectures. Memristive devices are of great interest with their high integration and low power consumption in the field of synaptic devices. In this work, we demonstrate short-term plasticity (STP) and long-term plasticity (LTP) by regulating synaptic weights with different stimulus pulses. Moreover, the application in neuromorphic computing is further exhibited by image recognition with an accuracy of 95.2 % under the modified National Institute of Standards and Technology database. Therefore, Nd-doped Bi₄Ti₃O₁₂ memristors, as emerging artificial synaptic devices, are expected to achieve breakthroughs in artificial intelligence and promote the development of neuromorphic computing and intelligent systems.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000172/pdfft?md5=5ce3ce238e78a5135c0d666469eee2eb&pid=1-s2.0-S2772949424000172-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141229968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cation doping strategy for improved carrier mobility and stability in metal-oxide Heterojunction thin-film transistors","authors":"Boyeon Park ,&nbsp;San Nam ,&nbsp;Youngjin Kang ,&nbsp;Seong-Pil Jeon ,&nbsp;Jeong-Wan Jo ,&nbsp;Sung Kyu Park ,&nbsp;Yong-Hoon Kim","doi":"10.1016/j.mtelec.2024.100090","DOIUrl":"10.1016/j.mtelec.2024.100090","url":null,"abstract":"<div><p>The heterojunction channel architecture has emerged as a viable solution to enhance the performance of metal-oxide thin-film transistors (TFTs), addressing the performance limitations of single-channel counterparts. However, carrier mobility enhancement through a channel thickness design often encounters significant challenges such as the negative threshold voltage (V_th) shift. In this study, we present a cation doping strategy, designed to regulate V_th shift while simultaneously boosting carrier mobility in zinc-tin-oxide (ZTO)-based heterojunction TFTs. A comprehensive investigation of ZTO-based semiconductors was conducted to explore the impact of cation doping on the energy band structure and to find an optimal heterojunction channel structure for high carrier mobility and stability. The resulting ZTO/Ti-doped ZTO (Ti:ZTO) heterojunction TFTs demonstrated a field-effect mobility of 39.7 cm²/Vs, surpassing the performance of ZTO TFTs (16.1 cm²/Vs), with a minimal change in the V_th. Furthermore, the ZTO/Ti:ZTO TFTs exhibited enhanced bias-stress stability compared to the ZTO TFTs. We attribute the improved mobility and stability to the electron accumulation near the oxide channel heterointerface facilitated by band bending and defect passivation effect arising from the Ti:ZTO back-channel layer, respectively.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100090"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000020/pdfft?md5=15f60ff0a0662214a0774d76a56e938b&pid=1-s2.0-S2772949424000020-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140271302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aromatic spacer engineering for 2D halide perovskites and their application in solar cells","authors":"Yi Shen ,&nbsp;Siliang Hu ,&nbsp;You Meng ,&nbsp;SenPo Yip ,&nbsp;Johnny C. Ho","doi":"10.1016/j.mtelec.2024.100100","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100100","url":null,"abstract":"<div><p>Perovskites have emerged as a promising new generation of photovoltaic conversion materials, gradually surpassing traditional silicon-based materials in solar cell research. This development is primarily due to their superior power-conversion efficiency (PCE), simple fabrication process, and cost-effective production. However, the low stability of perovskite ionic crystals poses a significant challenge to their stability, hindering the progress of perovskite materials and devices. Although two-dimensional (2D) perovskites offer improved stability, adding organic amine ions results in a quantum confinement effect that reduces the optoelectronic performance of devices. To counter this issue, the strategic design of suitable spacer cations offers a potential solution. Aromatic amine ions possess greater polarity and structural adjustability compared to aliphatic amine ions, making them advantageous in mitigating the quantum confinement effect. This review focuses on phenylethylammonium (PEA) as a representative aromatic spacer cation. It categorizes the evolution of these cations into four trajectories: alkyl chain modification, substitution of hydrogen atoms on the aromatic ring with specific substituents, replacement of benzene rings with aromatic heterocycles, and utilization of multiple aromatic rings instead of a monoaromatic ring. The structure, properties, and corresponding device performance of aromatic spacer cations utilized in reported 2D perovskites are discussed, followed by the presentation of a series of factors for selecting and designing aromatic amine ions for future development.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100100"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000123/pdfft?md5=22114eb238124e126c59fed5a00159cd&pid=1-s2.0-S2772949424000123-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140878682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lead-free perovskites for flexible optoelectronics","authors":"Chien Cheng Li,&nbsp;Tzu Yu Huang,&nbsp;Yu Hsuan Lai,&nbsp;Yu Chuan Huang,&nbsp;Chih Shan Tan","doi":"10.1016/j.mtelec.2024.100095","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100095","url":null,"abstract":"<div><p>In modern technology, optoelectronics plays a pivotal role, finding applications in diverse areas like solar cells, light-emitting diodes (LEDs), and photodetectors. Perovskite materials, known for their exceptional optical properties, are gaining attraction due to their light weight, flexibility, and ease of production. The expanding markets of wearable electronics and flexible displays have underscored the importance of developing flexible perovskite optoelectronic devices. However, the prevalent use of lead in high-performance perovskite devices poses significant environmental and health risks, casting doubt on their commercial future. This review commences with examining lead hazards, followed by a discussion on how first-principles calculations aid in designing lead-free perovskites. We survey the synthesized lead-free perovskites and explore their properties. The focus then shifts to the latest advancements in flexible optoelectronic devices utilizing lead-free perovskites, including solar cells, LEDs, and near-infrared photodetectors. Additionally, we explore the role of TCAD (Technology Computer-Aided Design) in simulating and optimizing these devices, highlighting its impact on device design and efficiency.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100095"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400007X/pdfft?md5=9e5df612d9062465802c7722fe047cc5&pid=1-s2.0-S277294942400007X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140296453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparative study on 2D materials with native high-κ oxides for sub-10 nm transistors","authors":"Mayuri Sritharan,&nbsp;Robert K.A. Bennett ,&nbsp;Manasa Kaniselvan,&nbsp;Youngki Yoon","doi":"10.1016/j.mtelec.2024.100096","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100096","url":null,"abstract":"<div><p>Two-dimensional (2D) transition metal dichalcogenides (TMDs) with native high-<span><math><mi>κ</mi></math></span> oxides have presented a new avenue towards the development of next-generation ultra-scaled field-effect transistors (FETs). These materials have been experimentally shown to form a natively compatible oxide layer with a high dielectric constant, which can help scale down both the transistor size and the supply voltage. We present a material and device performance study into the use of several of these materials – namely HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, HfSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, ZrS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, ZrSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> – as channels in sub-10 nm FETs. All four materials exhibit isotropic transport at 10 nm channel length with ON currents over 1000 <span><math><mi>μ</mi></math></span>A/<span><math><mi>μ</mi></math></span>m but show anisotropic transport and degraded ON currents at 5 nm channel length. In general, the sulfide family excels in terms of subthreshold characteristics at sub-10 nm channel lengths. HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, in particular, surpasses all the other materials in terms of ON currents and subthreshold swing (SS), allowing it to also achieve excellent intrinsic performance. We have identified HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> as a superior material within this TMD family for sub-10 nm FETs.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100096"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000081/pdfft?md5=a979c6ee2c56af0519ac1f51f526e30a&pid=1-s2.0-S2772949424000081-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140351877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly flexible and transparent amorphous indium doped tin oxide on bio-compatible polymers for transparent wearable sensors","authors":"Yu-Kyung Oh ,&nbsp;Minchul Sung ,&nbsp;Jin Woong Kim ,&nbsp;Han-Ki Kim","doi":"10.1016/j.mtelec.2024.100104","DOIUrl":"10.1016/j.mtelec.2024.100104","url":null,"abstract":"<div><p>Highly transparent and flexible amorphous Sn-doped In₂O₃ (a-ITO) films deposited on flexible and bio-compatible cyclic olefin polymer (COP) substrate using a direct-current magnetron sputtering at room temperature were used as flexible and transparent electrodes for transparent wearable sensors. The figure of merits (FoM) value was calculated to determine the optimal sputtering process for the a-ITO electrodes by varying the direct current power, working pressure, oxygen flow rate, and a-ITO thickness. The optimized a-ITO/COP with a high FoM value of 8.9 exhibited a low sheet resistance of 36 Ohm/square, average transmittances of 89.5 % in the visible wavelength region, and a small critical bending radius of 7 mm, which are acceptable transparent electrodes for fabrication of wearable and transparent wearable sensors. To demonstrate the feasibility of the a-ITO/COP substrate as a promising wearable sensor, we examined the performance of wearable temperature sensors, wearable heaters, and wearable glucose sensors. The successful operation of a-ITO/COP-based temperature sensors with high sensitivity, transparent heaters with a saturation temperature of 87.8 °C at 6 V, and glucose sensors with high sensitivity indicates that a-ITO/COP is a promising bio-compatible electrode for next-generation wearable bionic electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000160/pdfft?md5=7493bf2f6029daacbd15d00c60fe31b9&pid=1-s2.0-S2772949424000160-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141045254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in perovskite/Cu(In,Ga)Se2 tandem solar cells","authors":"Yuchen Xiong ,&nbsp;Zijun Yi ,&nbsp;Wenguang Zhang ,&nbsp;Yihuai Huang ,&nbsp;Zhihong Zhang ,&nbsp;Qinghui Jiang ,&nbsp;Xin Ren Ng ,&nbsp;Guibin Shen ,&nbsp;Yubo Luo ,&nbsp;Xin Li ,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2023.100086","DOIUrl":"10.1016/j.mtelec.2023.100086","url":null,"abstract":"<div><p>Tandem solar cells (TSCs) are poised to revolutionize photovoltaic (PV) technology as they hold the promise of a significantly higher power conversion efficiency (PCE) compared to the current dominant single-junction solar cells. TSCs are composed of two different absorbing materials, strategically utilizing the shared incident solar spectrum to achieve a synergistic boost in PCE. The perovskite/Cu(In,Ga)Se₂ (CIGS) TSCs, as a cutting-edge and prospective solar energy conversion device, have sparked widespread research interest by synergistically combining the unique advantages of perovskite and CIGS materials. This comprehensive review presents a thorough investigation of the latest research advancements in perovskite/CIGS TSCs, with a specific focus on the intricacies of device structure design and state-of-the-art fabrication methods. Significant attention is devoted to elucidating the pivotal role of interface engineering, material composition optimization, and precise control of processing parameters in determining the PV performance of the devices. By optimizing the stacked architecture and enhancing material interfaces, the review demonstrates how substantial improvements have been achieved in terms of high-efficiency PV conversion and superior carrier transport, consequently elevating the performance and long-term device stability. Finally, the review provides a compelling outlook on the future development of perovskite/CIGS TSCs, aiming to drive further advancements and practical applications of this advanced technology.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100086"},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000621/pdfft?md5=2b0d2601130da2733c90d67d6692a157&pid=1-s2.0-S2772949423000621-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139018165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review on recent advances in anode materials in lithium ion batteries","authors":"Ashish Kumar Mishra,&nbsp;Monika,&nbsp;Balbir Singh Patial","doi":"10.1016/j.mtelec.2024.100089","DOIUrl":"10.1016/j.mtelec.2024.100089","url":null,"abstract":"<div><p>The immediate compelling demand of eco-friendly and portable energy sources for various applications is increasing day by day as the world is moving towards faster technological advancements and industrial revolution. We are surrounded by many gadgets of daily usage which are either needed energy to run them continuously or something to store the energy to make it portable for later use. The invention of battery and continuous research in this field to enhance the electrochemical performance of the existing battery chemistries are hot topics for researchers. Li-ion batteries stood out as the most reliable and suitable device for storing energy. These have applications from small scale such as mobile phone to bigger applications like electric vehicles. Highest theoretical capacity, lightweight, high energy density and many other parameters of Li metal anodes make them attractive choice for the applications which shows lowest electrochemical potential of <span><math><mrow><mo>−</mo><mn>3</mn><mo>.</mo><mn>04</mn><mspace></mspace><mi>V</mi></mrow></math></span> versus standard hydrogen electrode. Storage of more energy, occupying less space and able to deliver better cyclic and rate capability are some prerequisites for the advanced batteries before their usage in bigger applications. Researchers are now trying to find the alternate materials for cathode and anode. The different structural cathode materials are being tested and various anode chemistries have been tried. Silicon additive anodes have the potential to replace the regular graphite anode material because of 10 times larger specific capacity. This paper reviews the anode materials which are currently under research to enhance the performance of Li-ion battery in comparison with the currently commercialized graphite anode. The anode materials reviewed in this paper are categorized based on Li-insertion mechanism as intercalation, alloys, conversion and MOF. The synthesis methods and electrochemical performance are reported and discussed. A comparative study with other metal-ions and metal-air battery is also put forward to make an idea about the efficiency of the material along with the various challenges and future perspective in the development of the anode materials in Li-ion batteries.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100089"},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000019/pdfft?md5=f1e00bf265fb44757878fa005a4aa7e3&pid=1-s2.0-S2772949424000019-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139631748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bendable & twistable oxide-polymer based hybrid electrochromic device: Flexible and multi-wavelength color modulation","authors":"Bhumika Sahu ,&nbsp;Love Bansal ,&nbsp;Deb Kumar Rath ,&nbsp;Suchita Kandpal ,&nbsp;Tanushree Ghosh ,&nbsp;Nikita Ahlawat ,&nbsp;Chanchal Rani ,&nbsp;Maxim Yu Maximov ,&nbsp;Rajesh Kumar","doi":"10.1016/j.mtelec.2023.100082","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100082","url":null,"abstract":"<div><p>Flexible electrochromic (EC) technology has made huge progress in electronic industry for their applications in flexible displays, e-papers, e-curtains etc. The performance of device is the main concern while fabricating a flexible electrochromic device. In this paper, a solid state flexible electrochromic device (flex-ECD) has been demonstrated by combining the excellent EC performance of organic polymer and excellent stability of metal oxides which exhibits fast color switching and excellent stability after bending and twisting it for several times. For the fabrication of device, first Co₃O₄ and WO₃ powders have been synthesised and utilised as dopants in the two electrochromic active materials namely polythiophene (P3HT) and ethyl viologen (EV), respectively. Due to the doping of these nanomaterials the performance of the flex-ECD has been enhanced as measured in terms of coloration efficiency, switching time and stability. Additionally, the device shows color switching in their different wavelength regions between visible and NIR. The flex-ECD shows high stability with a few seconds of switching time and high coloration efficiency of 420 cm²/C. The device was first bent and subsequently twisted for several more times. After bending, the performance has been checked, exhibiting minimal change in switching time at 515 nm and 665 nm without compromising the coloration efficiency much. The device shows excellent stability after bending and twisting moments making it a good design for future wearable electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100082"},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942300058X/pdfft?md5=08326e62a4acf288a441e6e23282c29b&pid=1-s2.0-S277294942300058X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138548980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}