Materials Today Electronics最新文献_第9页

Advances in organic transistors for artificial perception applications 用于人工感知的有机晶体管研究进展

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100028

Wei Wang , Zihan He , Chong-an Di , Daoben Zhu

引用次数: 3

Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications 基于Cu0.06-xNi0.03Sn0.03+xS0.12纳米片的光电子和介电应用

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100030

D. Sahoo , S. Senapati , S. Samal , Sagar Bisoyi , R. Naik

{"title":"Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications","authors":"D. Sahoo , S. Senapati , S. Samal , Sagar Bisoyi , R. Naik","doi":"10.1016/j.mtelec.2023.100030","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100030","url":null,"abstract":"<div>The present investigation reports the preparation of Cu0.06-xNi0.03Sn0.03+xS0.12 (CNTS) nanosheets (NS) by hydrothermal method and its dielectric and optical behavior. The as-prepared CNTS samples with different Sn content exhibit polycrystalline nature with primary stannite phase along with several secondary phases. The CNTS samples show nanoflower-like morphology consisting of self-assembled NS of an average thickness of 40–50 nm. The morphology remains invariant, but a variation in the band edge absorption and corresponding bandgap variation is observed for the increase in Sn content. The photoluminescence emission with 532 nm excitation of CNTS nanosheets shows the peaks in orange-red regions. The visible emission is primarily due to the presence of different defect states in the NS. From the frequency and temperature-dependent dielectric study, AC conductivity and the impedance spectroscopy-related parameters were evaluated. In the low-frequency region, the CNTS behaves like an unpolarized material, whereas in the high-frequency region, it facilitates the hopping of charge carriers due to the increased frequency range. The electrical conduction is due to the cumulative result of the hopping of charge carriers across the barrier potential and tunneling of polarons formed due to lattice distortion at high temperatures. The behavior of the complex impedance parameters validates the negative temperature coefficient of resistance and the decrease in bulk resistance with the increase in temperature. The tunable semiconducting properties, along with the excellent optical and dielectric behavior of the CNTS materials, promote its application in various cutting-edge optoelectronic and dielectric devices.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"3 ","pages":"Article 100030"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Recent advances of transition radiation: Fundamentals and applications 跃迁辐射的最新进展:基础与应用

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100025

Ruoxi Chen , Zheng Gong , Jialin Chen , Xinyan Zhang , Xingjian Zhu , Hongsheng Chen , Xiao Lin

引用次数: 7

Enhancing the bandwidth of antennas using polymer composites with high dielectric relaxation 利用高介电弛豫聚合物复合材料增强天线带宽

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100026

Ilkan Calisir , Xiantao Yang , Elliot L. Bennett , Jianliang Xiao , Yi Huang

{"title":"Enhancing the bandwidth of antennas using polymer composites with high dielectric relaxation","authors":"Ilkan Calisir , Xiantao Yang , Elliot L. Bennett , Jianliang Xiao , Yi Huang","doi":"10.1016/j.mtelec.2023.100026","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100026","url":null,"abstract":"<div>We propose a concept using a frequency-dependent property (dielectric relaxation) of dielectric materials to enhance the bandwidth of the antenna widely used in wireless communications. The bandwidth enhancement can be achieved when a loading dielectric material with a relative permittivity that is inversely proportional to the frequency by the power of n. The bandwidth for a selected antenna example could be increased by 135% when the power n = 2. A solid material, composed of plasticized PVDF containing nano-sized silica particles, exhibiting dielectric relaxation of n = 0.52, is developed in order to prove the theoretical concept and used to test the performance of an example mobile phone antenna. The influence of hydrogen bonding on tuning the frequency-dependent power n in the developed composite material is verified. The bandwidth of the antenna was increased by 18% over the operating frequency band using a newly developed dielectrically relaxing material, n = 0.52 compared to the conventional non-relaxing material, n = 0.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"3 ","pages":"Article 100026"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Diffusion limiting layer induced tantalum oxide based memristor as nociceptor 扩散限制层诱导氧化钽基忆阻器作为伤害感受器

Materials Today Electronics Pub Date : 2023-05-01 DOI: 10.1016/j.mtelec.2023.100031

Debashis Panda , Yu-Fong Hui , Tseung-Yuen Tseng

引用次数: 1

Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices 用于无偏置磁体和可重构微波磁性器件的功能性纳米结构

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100008

Arabinda Haldar

{"title":"Functional nanostructures for bias-magnet-free and reconfigurable microwave magnetic devices","authors":"Arabinda Haldar","doi":"10.1016/j.mtelec.2022.100008","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100008","url":null,"abstract":"<div>Recent demonstrations of the reconfigurable microwave properties based on patterned magnetic nanostructures without any external bias magnetic field have been reviewed. Two main design strategies for the nanostructures have been discussed. Firstly, self-biased nanomagnetic networks and multilayer structures that possess two different remanent magnetic states are exploited. Different remanent states are associated with distinct microwave properties and they are within a nanosecond time scale by using a simple field initialization scheme. The dipolar coupling field and the demagnetization field variations have been attributed to the origin of the tunable microwave responses. Secondly, magnetic skyrmions have been explored for tunable microwave properties. In this regard, skyrmion size which is directly related to its resonant modes has been controlled by placing it at different positions in an engineered nanostructure with varying edge repulsions. Finally, an outlook on the future directions and scopes of bias-free microwave devices have been discussed. It is also outlined that such devices have potential implications for the logic and magnonic technologies beyond their applications for microwave magnetic devices.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"2 ","pages":"Article 100008"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000080/pdfft?md5=186e9e9e3e4678564e823ad89e014869&pid=1-s2.0-S2772949422000080-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Broadband Photodetection of Cd3As2: Review and Perspectives Cd3As2的宽带光探测：回顾与展望

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100007

Yunkun Yang , Faxian Xiu

引用次数: 3

Skin-Integrated, Stretchable Triboelectric Nanogenerator for Energy Harvesting and Mechanical Sensing 用于能量收集和机械传感的皮肤集成、可拉伸摩擦电纳米发电机

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100012

Ling Zhao, Zihong Lin, K. Lai

引用次数: 3

On functional boron nitride: Electronic structures and thermal properties 功能氮化硼的电子结构与热性能

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100005

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu

引用次数: 6

Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3 基于Sb2Se3的柔性短波红外光电探测器

Materials Today Electronics Pub Date : 2022-10-01 DOI: 10.1016/j.mtelec.2022.100011

Kanghua Li , Xuke Yang , Feifan Yang , Jungang He , Guangzu Zhang , Shenglin Jiang , Chao Chen , Jiang Tang

{"title":"Flexible short-wavelength infrared photodetector based on extrinsic Sb2Se3","authors":"Kanghua Li , Xuke Yang , Feifan Yang , Jungang He , Guangzu Zhang , Shenglin Jiang , Chao Chen , Jiang Tang","doi":"10.1016/j.mtelec.2022.100011","DOIUrl":"https://doi.org/10.1016/j.mtelec.2022.100011","url":null,"abstract":"<div>One-dimensional antimony selenide (Sb2Se3), enjoying intriguing optoelectronic properties, has drawn extensive attention in solar cells and broadband photodetection. Limited by the bandgap, the reported Sb2Se3 photodetectors always focus on the detection of visible and near-infrared (<1050 nm). Extending the detection waveband can greatly enrich the applications of Sb2Se3 photodetectors. Extrinsic photoconduction is an attractive strategy for extending the detection waveband, for example, the extrinsic Si detector for short-wavelength or long-wavelength infrared detection. However, Sb2Se3 extrinsic photoconduction has not been reported yet. Herein, the extrinsic photoconduction, attributed to the intrinsic point defects, is observed in Sb2Se3 for the first time, which induced a broadened short-wavelength infrared detection of 1650 nm at room temperature. Furthermore, the Sb2Se3 photodetector is fabricated on a flexible polyimide substrate. Meanwhile, the Sb2Se3 photodetectors also demonstrate a fast response speed (rise of 9 µs and fall of 11 µs), a high linear dynamic range of 98 dB, and wide -3dB bandwidth of 163 kHz at 1300 nm. This extrinsic-photoconduction provides feasible design strategies to broaden the detection waveband of the Sb2Se3 photodetectors and can be extended to other chalcogenides.</div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"2 ","pages":"Article 100011"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949422000110/pdfft?md5=116391beadfdd9f4d9edce53df7dfd92&pid=1-s2.0-S2772949422000110-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72110643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9