Materials Today Electronics最新文献_第9页

Inkjet-printed flexible piezoelectric sensor for self-powered biomedical monitoring 用于自供电生物医学监测的喷墨打印柔性压电传感器

Materials Today Electronics Pub Date : 2023-09-01 DOI: 10.1016/j.mtelec.2023.100056

Hamed Abdolmaleki , Astri Bjørnetun Haugen , Youssif Merhi , Jens Vinge Nygaard , Shweta Agarwala

{"title":"Inkjet-printed flexible piezoelectric sensor for self-powered biomedical monitoring","authors":"Hamed Abdolmaleki , Astri Bjørnetun Haugen , Youssif Merhi , Jens Vinge Nygaard , Shweta Agarwala","doi":"10.1016/j.mtelec.2023.100056","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100056","url":null,"abstract":"<div><p>Printed electronics has enabled fabrication of electronic components and devices with low cost and more manufacturing and design freedom. This manufacturing technique has been successfully employed as a complementary fabrication approach to conventional nanolithography and microfabrication processes to create flexible and stretchable electronics. Fluoropolymers are crucial components in electronic devices and components, owing to their piezoelectric, triboelectric, pyroelectric, ferroelectric, and dielectric properties. In this research, we report fabrication of an inkjet-printed piezoelectric sensor based on poly (vinylidenefluoride trifluoroethylene) (PVDF-TrFE) and amine functionalized graphene oxide (AGO) for biomedical monitoring. The piezoelectric inkjet ink was obtained by optimizing the fluid mechanic properties based on Reynold and Weber numbers. The inkjet-printed freestanding film was characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), wide-angle X-Ray scattering (WAXS), and differential scanning calorimetry (DSC). The piezoelectric sensor was fabricated by deposition of silver electrodes on each side of the piezoelectric film, followed by wiring and encapsulation. The sensor was subjected to an electric field of 1500 kV/cm to align the internal dipoles and induce net polarization. The fabricated flexible piezoelectric sensor was employed for monitoring biomedical signals such as finger tapping, joint bending, and swallowing. The sensor demonstrated outstanding sensitivity of 0.1 V/kPa and excellent repeatability and stability over 1000 cycles.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100056"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Flexible, active P-typed copper(I) thiocyanate (p-CuSCN) films as self-powered photodetectors for large-scale optoelectronic systems 柔性、活性p型硫氰酸铜(p-CuSCN)薄膜作为大规模光电系统的自供电光电探测器

Materials Today Electronics Pub Date : 2023-09-01 DOI: 10.1016/j.mtelec.2023.100048

Sancan Han , Qingqiang Zhao , Qing Hou , Yuanpeng Ding , Jiale Quan , Yixin Zhang , Fangyu Wu , Yifei Lu , Hehua Zhang , Huijun Li , Ding Wang , Enming Song

{"title":"Flexible, active P-typed copper(I) thiocyanate (p-CuSCN) films as self-powered photodetectors for large-scale optoelectronic systems","authors":"Sancan Han , Qingqiang Zhao , Qing Hou , Yuanpeng Ding , Jiale Quan , Yixin Zhang , Fangyu Wu , Yifei Lu , Hehua Zhang , Huijun Li , Ding Wang , Enming Song","doi":"10.1016/j.mtelec.2023.100048","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100048","url":null,"abstract":"<div><p>P-type copper(I) thiocyanate (p-CuSCN) semiconductor materials have attracted a great deal of attention in the application for microsystems and optoelectronic engineering. Major challenge is in the development of advanced fabrication/growth techniques and resultant high-efficiency devices. Herein, <em>in situ</em> grown p-CuSCN film with different morphology are successfully achieved on flexible Cu foil by the simple solid-liquid interface reaction, which displays excellent UV photoresponse due to effective charge transport, thereby contributing to the large-area fabrication technique and the high-performance operation. The self-powered, highly sensitive and flexible NGQDs/CuSCN heterojunction device shows the ultrahigh photoresponsivity of 1.6 A/W and detectivity of 0.8 × 10<sup>12</sup> Jones at 3 V bias under 360 nm illumination, and the ultrafast photoresponse speed (T<sub>r</sub>= 10 µs, T<sub>d</sub>=0.6 ms), with relatively stable performance under bending cycles. The results provides an easy-processing and promising route to fabricate large-area p-CuSCN with remarkable optoelectronic performance, which opens up a new avenue on more novel works for the material design in practical photodetection.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100048"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A review of common materials for hybrid quantum magnonics 杂化量子磁振学常用材料综述

Materials Today Electronics Pub Date : 2023-09-01 DOI: 10.1016/j.mtelec.2023.100044

Xufeng Zhang

引用次数: 1

PEDOT:PSS-based electrochromic materials for flexible and stretchable devices PEDOT:用于柔性和可拉伸器件的基于pss的电致变色材料

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100036

Zhiqi Wang , Ruiyuan Liu

引用次数: 3

0D-2D heterostructure for making very large quantum registers using ‘itinerant’ Bose-Einstein condensate of excitons 利用激子的“流动”玻色-爱因斯坦凝聚体制造超大量子寄存器的0D-2D异质结构

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100039

Amit Bhunia , Mohit Kumar Singh , Maryam Al Huwayz , Mohamed Henini , Shouvik Datta

{"title":"0D-2D heterostructure for making very large quantum registers using ‘itinerant’ Bose-Einstein condensate of excitons","authors":"Amit Bhunia , Mohit Kumar Singh , Maryam Al Huwayz , Mohamed Henini , Shouvik Datta","doi":"10.1016/j.mtelec.2023.100039","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100039","url":null,"abstract":"<div><p>Presence of coherent ‘resonant’ tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure definitely requires momentum space narrowing of charge carriers inside the quantum well and that of associated indirect excitons, which indicates bias dependent ‘itinerant’ Bose-Einstein condensation of excitons. Observation of periodic variations in negative quantum capacitance points to in-plane coulomb correlations mediated by long range spatial ordering of indirect, dipolar excitons. Enhanced contrast of quantum interference beats of excitonic polarization waves even under white light and observed Rabi oscillations over a macroscopically large area also support the presence of density driven excitonic condensation having long range order. Periodic presence (absence) of splitting of excitonic peaks in photocapacitance spectra even demonstrate collective coupling (decoupling) between energy levels of the quantum well and quantum dots with applied biases, which can potentially be used for quantum gate operations. All these observations point to experimental control of macroscopically large, quantum state of a two-component Bose-Einstein condensate of excitons in this quantum dot - quantum well heterostructure. Therefore, in principle, millions of two-level excitonic qubits can be intertwined to fabricate large quantum registers using such hybrid heterostructure by controlling the local electric fields and also by varying photoexcitation intensities of overlapping light spots.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100039"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Nonequilibrium quantum transport properties of tetragonal zinc chalcogenide monolayers 四方硫系锌单分子层的非平衡量子输运性质

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100041

Yaoyun Zhu , Shuang Meng , Jia Zhou

{"title":"Nonequilibrium quantum transport properties of tetragonal zinc chalcogenide monolayers","authors":"Yaoyun Zhu , Shuang Meng , Jia Zhou","doi":"10.1016/j.mtelec.2023.100041","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100041","url":null,"abstract":"<div><p>Tetragonal zinc chalcogenide monolayers (TZCM) are emerging as interesting electronic materials with a direct band gap and relatively high carrier mobility. In this work, we report a theoretical investigation of electronic transport properties and photoelectric response properties of TZCM with gold contacts by density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. When there is no gate voltage applied, the current increases nonlinearly as bias voltage increases. Among the four proposed devices, the Au(100)/ZnS/Au(100) device has the best electronic transport performance and is most sensitive to the adjustment of bias voltage and gate voltage. The photocurrent calculation results indicate that the low-frequency oscillatory photocurrent of the Au(100)/ZnSe/Au(100) device in the high photon energy region may have potential applications in ultraviolet light-emitting diodes. The Au(100)/Zn<sub>2</sub>SeS/Au(100) device has more stable photoelectric response and polarization sensitivity than the Au(100)/Zn<sub>2</sub>SSe/Au(100) device. The Au(100)/TZCM/Au(100) devices exhibit considerable photocurrent and good extinction ratios. This work could pave the way for the future application of TZCM in the field of optoelectronics and so on.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100041"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetization switching in van der Waals systems by spin-orbit torque 基于自旋轨道转矩的范德华体系磁化开关

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100037

Xin Lin , Lijun Zhu

引用次数: 2

Stable Hybrid Perovskite Materials for Photovoltaics Under Real-World Conditions 实际条件下用于光伏发电的稳定杂化钙钛矿材料

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100038

引用次数: 1

Cross-shape reconfigurable field effect transistor for flexible signal routing 用于灵活信号路由的十字形状可重构场效应晶体管

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100040

Cigdem Cakirlar , Maik Simon , Giulio Galderisi , Ian O'Connor , Thomas Mikolajick , Jens Trommer

{"title":"Cross-shape reconfigurable field effect transistor for flexible signal routing","authors":"Cigdem Cakirlar , Maik Simon , Giulio Galderisi , Ian O'Connor , Thomas Mikolajick , Jens Trommer","doi":"10.1016/j.mtelec.2023.100040","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100040","url":null,"abstract":"<div><p>Reconfigurable field effect transistors are one of the most promising emerging device concepts for future computing systems, due to their dynamic p- and n-channel behavior. Over the past decade, there have been significant advances on electrical characteristics and circuit designs, but there are still many additional options to explore. In this letter, a disruptive common-channel reconfigurable filed effect transistor concept is presented experimentally for the first time. A cross-shape integrated nanowire structure is fabricated on a silicon-on-insulator wafer using top-down methods for higher reproducibility. The fabricated cross-shape reconfigurable field effect transistor is composed of a doping-free common channel with four independent silicided source and drain junctions, a silicon dioxide dielectric layer and four independent gates aligned on top of the silicide junctions. By assembling this unique common-channel structure, device level current routing was provided. A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor characteristics for each branch, which enables new complementary circuit designs to be introduced. We demonstrated an inverter and a multiplexer circuit both built from the same two transistors with enhanced functionality when compared to a single source configuration.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100040"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Tactile perception in hydrogel-based robotic skins using data-driven electrical impedance tomography 基于数据驱动的电阻抗断层扫描的基于水凝胶的机器人皮肤的触觉感知

Materials Today Electronics Pub Date : 2023-06-01 DOI: 10.1016/j.mtelec.2023.100032

David Hardman , Thomas George Thuruthel , Fumiya Iida

{"title":"Tactile perception in hydrogel-based robotic skins using data-driven electrical impedance tomography","authors":"David Hardman , Thomas George Thuruthel , Fumiya Iida","doi":"10.1016/j.mtelec.2023.100032","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100032","url":null,"abstract":"<div><p>Combining functional soft materials with electrical impedance tomography is a promising method for developing continuum sensorized soft robotic skins with high resolutions. However, reconstructing the tactile stimuli from surface electrode measurements is a challenging ill-posed modelling problem, with FEM and analytic models facing a reality gap. To counter this, we propose and demonstrate a model-free superposition method which uses small amounts of real-world data to develop deformation maps of a soft robotic skin made from a self-healing ionically conductive hydrogel, the properties of which are affected by temperature, humidity, and damage. We demonstrate how this method outperforms a traditional neural network for small datasets, obtaining an average resolution of 12.1 mm over a 170 mm circular skin. Additionally, we explore how this resolution varies over a series of 15,000 consecutive presses, during which damages are continuously propagated. Finally, we demonstrate applications for functional robotic skins: damage detection/localization, environmental monitoring, and multi-touch recognition - all using the same sensing material.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"4 ","pages":"Article 100032"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2