Materials Today Electronics最新文献

{"title":"Perovskite white light emitting diodes: A review","authors":"Praveen Chenna,&nbsp;Suman Gandi,&nbsp;Sujith Pookatt,&nbsp;Saidi Reddy Parne","doi":"10.1016/j.mtelec.2023.100057","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100057","url":null,"abstract":"<div><p>Recently, there has been a great deal of interest in the potential of perovskite materials for white light emitting diodes (WLEDs). This is due to the remarkable optical properties of these materials, which make them ideal for the application of WLEDs. In this review article, we discuss the recent progress made in the development of WLEDs based on perovskite materials and their potential for use in future applications. The first generation of WLEDs based on perovskite materials was developed in the early 2000s. These LEDs were based on a single layer of organic-inorganic perovskite material, which was used to generate a single emission peak in the visible spectrum. This single peak emission was then combined with a phosphor coating in order to generate white light. Since then, several improvements have been made to the design and structure of WLEDs, resulting in higher efficiency and increased light output. In the past few years, there have been several advances in the design of WLEDs based on perovskite materials. For example, the use of multi-layer perovskites and the addition of quantum dots have enabled the generation of broader emission spectra, resulting in improved color rendition and higher luminous efficacy. In addition, the use of nanostructured perovskites has enabled the generation of LEDs with higher efficiencies and improved thermal stability. Overall, perovskite materials have shown great potential for use in WLEDs. These materials are relatively easy to manufacture, and their optical properties can be tailored to generate a wide range of colors and emission spectra. Additionally, their low cost and high efficiency make them attractive for use in a wide range of applications. In conclusion, perovskite materials are a promising material for the development of WLED technology. The recent advances in the design and fabrication of these LEDs have enabled them to achieve high efficiencies and improved color rendition. As such, they are an attractive option for applications such as automotive lighting and lighting for homes and businesses.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100057"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress of bio-based smart wearable sensors for healthcare applications","authors":"Seyedeh Nooshin Banitaba ,&nbsp;Sanaz Khademolqorani ,&nbsp;Vijaykumar V. Jadhav ,&nbsp;Elham Chamanehpour ,&nbsp;Yogendra Kumar Mishra ,&nbsp;Ebrahim Mostafavi ,&nbsp;Ajeet Kaushik","doi":"10.1016/j.mtelec.2023.100055","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100055","url":null,"abstract":"<div><p>As personal portable devices, wearable sensors supply a leading-edge pathway to diagnose various diseases through actuating biological, physical, and chemical sensing capabilities. This could be commonly carried out via recording continuous and real-time of the patient's physiological statuses, as well as pathophysiological information. Although wearable sensor technology is in the infancy stage, tremendous attempts have been devoted to approaching flexible polymeric sensors. Among various polymer candidates applicable for synthesizing flexible and wearable sensors, the bio-based ones have piqued more interest due to their biocompatibility, biodegradability, eco-friendly features, and cost-effectiveness. Additionally, several fabrication techniques have been professed to architect efficient frameworks, such as films, hydrogels, aerogels, ferrogels, 3D layers, electrospun mats, and textiles. In this review, different mechanisms declared to engineer wearable sensors are overviewed. Then, regarding the advantages observed for bio-based polymers, the focused studies on the fabrication of natural-based wearable sensors are described. Notably, cellulose, chitosan, silk, gelatin, and alginate's role in sensing functionality is highlighted. Accordingly, this review has opened a new window to ahead opportunities for wearable sensors based on natural polymers. It is hoped that the new generation of sensors will be launched by combining emerging achievements obtained from employing sustainable and green elements and miniaturized sensor structures.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100055"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49870974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlated Topological Electronic States and Surface Magnetic Orderings in Layered MnBi2Te4","authors":"Qi Bian ,&nbsp;Zhibin Shao ,&nbsp;Rui Song ,&nbsp;Yuan Cao ,&nbsp;Yuefei Hou ,&nbsp;Shaojian Li ,&nbsp;Runqing Zhai ,&nbsp;Xin Li ,&nbsp;Fawei Zheng ,&nbsp;Wenliang Zhu ,&nbsp;Yunbo Ou ,&nbsp;Ping Zhang ,&nbsp;Minghu Pan","doi":"10.1016/j.mtelec.2023.100050","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100050","url":null,"abstract":"<div><p>Magnetic van der Waals (vdW) layered materials has inspired enormous interest recently by utilizing the spin degree of freedom for applications in next-generation 2D spintronic devices. Among these materials, MnBi₂Te₄ provides topological bands and the alternating ferromagnetic / antiferromagnetic ordering simultaneously, thus serves as an ideal system promising for 2D spintronics. However, many controversies and discrepancies between theoretical predictions and experimental observations remain unclarified, mainly due to unclarified correlations between electronic bands and surface magnetic ordering. Here, we performed intensive studies of low temperature scanning tunneling microscopy/spectroscopy (STM/S) on high-quality single crystal of MnBi₂Te₄, rationalized with density functional theory (DFT) calculations. Topological surface states (TSSs) and the dispersions are clearly observed by quasiparticle interference (QPI) imaging. The asymmetric QPI patterns at the energies near Dirac point, strongly suggest that the magnetization of the Mn layer in the topmost septuple-layer can be canted into the in-plane direction, which is responsible for the observations of gapless TSSs. Furthermore, various bulk bandgaps observed at the temperatures below and above the Nèel temperature or at the edge of surface terraces, implies a variety of band structures correlated with rich magnetic orders in the surface Mn layer. Our results provide an in-depth understanding of correlations between topological electronic structures and magnetic ordering of surface layer in magnetic topological insulator MnBi₂Te₄, as well as spin-dependent transport properties in spintronic devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100050"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Nb-X ionic bonding on the superconductivity of the two-dimensional Nb2SXC (X=O, S, Se, F, Cl, and Br)","authors":"Yiming Zhang,&nbsp;Meiling Xu,&nbsp;Qingxin Zeng,&nbsp;Jian Hao,&nbsp;Yinwei Li","doi":"10.1016/j.mtelec.2023.100053","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100053","url":null,"abstract":"<div><p>The 2D Janus structure, an important derivative of 2D materials, exhibits distinct properties and significant potential in nanodevices. In this study, we focused on the recently synthesized 2D transition metal carbo-chalcogenide Nb₂S₂C [Adv. Mater. 34, 2200574 (2022)]. Through first-principles calculations, we designed five stable 2D Janus Nb₂SXC (X=O, Se, F, Cl, and Br) structures by substituting the top-layer sulfur atoms with X atoms. Both the intrinsic 2D Nb₂S₂C and the five 2D Janus Nb₂SXC structures display promising superconductivity, with an estimated <em>T</em>_c ranging from 1.35 to 12.66 K. The superconductivity is primarily attributed to the strong coupling between the vibration modes of the transverse acoustic branch and the electrons of Nb atoms. Further analysis reveals the significant role of electronegativity in the superconductivity of X elements. For X elements within the same main group, a larger electronegativity corresponds to stronger ionic Nb-X bonds, resulting in further softening of the transverse acoustic mode and enhanced superconductivity. These findings emphasize the crucial contribution of ionic Nb-X bonding in determining the <em>T</em>_c of the 2D Janus Nb₂SXC system, thus expanding the design possibilities for this wide range of superconducting materials.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100053"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance","authors":"Raquel Rodriguez-Lamas ,&nbsp;Dolors Pla ,&nbsp;Caroline Pirovano ,&nbsp;Odette Chaix-Pluchery ,&nbsp;Carlos Moncasi ,&nbsp;Michel Boudard ,&nbsp;Rose-Noëlle Vannier ,&nbsp;Carmen Jiménez ,&nbsp;Mónica Burriel","doi":"10.1016/j.mtelec.2023.100054","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100054","url":null,"abstract":"<div><p>LaMnO_3+δ (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn⁺³/Mn⁺⁴ equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100054"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bio-based substrate for flexible electronics - application to a 2.45 GHz wearable patch antenna","authors":"Abdelghafour Sid ,&nbsp;Pierre-Yves Cresson ,&nbsp;Nicolas Joly ,&nbsp;Flavie Braud ,&nbsp;Tuami Lasri","doi":"10.1016/j.mtelec.2023.100049","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100049","url":null,"abstract":"<div><p>In this paper, a bio-based and biocompatible polymer, Cellulose Laurate (CL), is proposed for flexible radio-frequency (RF) electronics. The synthesis of CL films together with their characterizations (chemical, thermal, mechanical and dielectric) are presented. The results obtained allow considering this material for RF flexible applications as a possible alternative to petrosourced substrates. Therefore, CL has been used to fabricate a flexible patch antenna that operates in an industrial, scientific and medical (ISM) frequency band. The central frequency selected is 2.45 GHz. The antenna fabrication process is based on the combination of laser structuring and the use of copper adhesive tape. Measurements of the antenna reflection coefficient and radiation patterns show that CL is a good candidate as a RF substrate. Furthermore, it is demonstrated that the antenna performance is only slightly impacted under bending conditions.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100049"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The trend of synthesized 2D materials toward artificial intelligence: Memory technology and neuromorphic computing","authors":"Muhammad Naqi,&nbsp;Yongin Cho,&nbsp;Arindam Bala,&nbsp;Sunkook Kim","doi":"10.1016/j.mtelec.2023.100052","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100052","url":null,"abstract":"<div><p>2D materials, specifically transition metal dichalcogenides (TMDs), have gained massive attention for their potential use in high-integration memory technologies due to their exceptional carrier transport, atomically thin structure, and superior physical and electronic properties. High-density memory processors and complex hardware neural architectures based on TMDs have been developed and shown to have exceptional memory properties, making them a potential competitor to conventional Si technology. However, TMDs are still facing challenges with achieving high yields at high-density levels when compared to Si-based semiconductor technology. This review article covers the synthesis methods, memory device structures, high-volume circuits, and neuromorphic computing of TMD materials. We briefly discuss a plethora of synthesis methods that are utilized to achieve large-area uniform distribution in the fabrication of memory arrays. Various memory device architectures based on two-terminal and three-terminal designs are introduced, offering comprehensive prospects for utilizing TMDs in neuromorphic computing and developing energy-efficient and low-power neural networks for complex computational tasks beyond conventional Si-based architecture. Finally, the potential and challenges of utilizing TMDs in neuromorphic circuits are briefly discussed, including perspectives on system architecture and performance, synaptic functionalities, implementing ANN algorithms, and applications to artificial intelligence at high-density levels.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100052"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anisotropic mass transport enables distinct synaptic behaviors on 2D material surface","authors":"Zhe Yang ,&nbsp;Ziyan Yang ,&nbsp;Long Liu ,&nbsp;Xin Li ,&nbsp;Junze Li ,&nbsp;Changying Xiong ,&nbsp;Xianliang Mai ,&nbsp;Hao Tong ,&nbsp;Yi Li ,&nbsp;Kan-Hao Xue ,&nbsp;Xiaoyong Xue ,&nbsp;Ming Xu ,&nbsp;Dehui Li ,&nbsp;Peng Zhou ,&nbsp;Xiangshui Miao","doi":"10.1016/j.mtelec.2023.100047","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100047","url":null,"abstract":"<div><p>Anisotropy is an intrinsic property in crystals with low structural symmetry, and such well-textured materials usually show distinct electronic transport and optical properties along different lattice orientations, offering wide applications in electronic and photonic devices. As a typical low-symmetry materials, crystalline GeSe with orthorhombic structure shows large electric and optical anisotropies. In this work, we take advantage of the anisotropic mass transport and filamentary growth of Ag ions on the GeSe surface to fabricate planar memristive devices which show directional memory and transient switching phenomena. The anisotropic switching behaviors stem from the distinct morphology of metallic filaments that are directionally dependent on the mobility of ions, e.g., ions diffusing along the low-barrier direction tend to form stark conductive channels while those with low mobility only entail slim and weak dendrites, which have been clearly observed under electronic microscopy. The functionality could be utilized to mimic various synaptic events, such as long-term memory enabled by stable conductive channels and short-term memory by the spontaneous rupture of weak filaments, all implemented in one physical device. Two integration schemes based on the anisotropic devices are designed and demonstrated for different application scenarios, paving the way for its applications in multifunctional brain-inspired computing systems.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100047"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inkjet-printed flexible piezoelectric sensor for self-powered biomedical monitoring","authors":"Hamed Abdolmaleki ,&nbsp;Astri Bjørnetun Haugen ,&nbsp;Youssif Merhi ,&nbsp;Jens Vinge Nygaard ,&nbsp;Shweta Agarwala","doi":"10.1016/j.mtelec.2023.100056","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100056","url":null,"abstract":"<div><p>Printed electronics has enabled fabrication of electronic components and devices with low cost and more manufacturing and design freedom. This manufacturing technique has been successfully employed as a complementary fabrication approach to conventional nanolithography and microfabrication processes to create flexible and stretchable electronics. Fluoropolymers are crucial components in electronic devices and components, owing to their piezoelectric, triboelectric, pyroelectric, ferroelectric, and dielectric properties. In this research, we report fabrication of an inkjet-printed piezoelectric sensor based on poly (vinylidenefluoride trifluoroethylene) (PVDF-TrFE) and amine functionalized graphene oxide (AGO) for biomedical monitoring. The piezoelectric inkjet ink was obtained by optimizing the fluid mechanic properties based on Reynold and Weber numbers. The inkjet-printed freestanding film was characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), wide-angle X-Ray scattering (WAXS), and differential scanning calorimetry (DSC). The piezoelectric sensor was fabricated by deposition of silver electrodes on each side of the piezoelectric film, followed by wiring and encapsulation. The sensor was subjected to an electric field of 1500 kV/cm to align the internal dipoles and induce net polarization. The fabricated flexible piezoelectric sensor was employed for monitoring biomedical signals such as finger tapping, joint bending, and swallowing. The sensor demonstrated outstanding sensitivity of 0.1 V/kPa and excellent repeatability and stability over 1000 cycles.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100056"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible, active P-typed copper(I) thiocyanate (p-CuSCN) films as self-powered photodetectors for large-scale optoelectronic systems","authors":"Sancan Han ,&nbsp;Qingqiang Zhao ,&nbsp;Qing Hou ,&nbsp;Yuanpeng Ding ,&nbsp;Jiale Quan ,&nbsp;Yixin Zhang ,&nbsp;Fangyu Wu ,&nbsp;Yifei Lu ,&nbsp;Hehua Zhang ,&nbsp;Huijun Li ,&nbsp;Ding Wang ,&nbsp;Enming Song","doi":"10.1016/j.mtelec.2023.100048","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100048","url":null,"abstract":"<div><p>P-type copper(I) thiocyanate (p-CuSCN) semiconductor materials have attracted a great deal of attention in the application for microsystems and optoelectronic engineering. Major challenge is in the development of advanced fabrication/growth techniques and resultant high-efficiency devices. Herein, <em>in situ</em> grown p-CuSCN film with different morphology are successfully achieved on flexible Cu foil by the simple solid-liquid interface reaction, which displays excellent UV photoresponse due to effective charge transport, thereby contributing to the large-area fabrication technique and the high-performance operation. The self-powered, highly sensitive and flexible NGQDs/CuSCN heterojunction device shows the ultrahigh photoresponsivity of 1.6 A/W and detectivity of 0.8 × 10¹² Jones at 3 V bias under 360 nm illumination, and the ultrafast photoresponse speed (T_r= 10 µs, T_d=0.6 ms), with relatively stable performance under bending cycles. The results provides an easy-processing and promising route to fabricate large-area p-CuSCN with remarkable optoelectronic performance, which opens up a new avenue on more novel works for the material design in practical photodetection.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"5 ","pages":"Article 100048"},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}