Exploring amorphous Ge-As-Se-Te as an active layer candidate in memristive devices

The implementation of resistive switches in neuromorphic computing and long-term data storage has been delayed by inherent difficulties in their fabrication process, their stability and reproducibility. Low operating voltages, high-density integration and low energy consumption are common challenges in resistive switch design. Here, we report the implementation of a resistive switch based on the amorphous semiconductor Ge${}_{15}$As${}_{25}$Se${}_{15}$Te${}_{45}$ (GAST) between an inert (W) and an active (Ag) electrode. The device was built using contact photolithography and standard microfabrication techniques, allowing the integration with traditional manufacturing processes. The device is able to switch at voltages as low as 0.15 V and 0.6 V, when operating in DC and pulsed conditions, respectively. Our results suggest that the adoption of mixed conductors such as GAST may yield devices that operate at low voltages and low energy for neuromorphic applications.