Materials Today Electronics最新文献_第8页

Revolutionizing photovoltaics: From back-contact silicon to back-contact perovskite solar cells 光伏技术的革命：从背接触硅到背接触包晶体太阳能电池

Materials Today Electronics Pub Date : 2024-09-01 Epub Date: 2024-06-10 DOI: 10.1016/j.mtelec.2024.100106

Waqas Ahmad , Chi Li , Wei Yu , Peng Gao

{"title":"Revolutionizing photovoltaics: From back-contact silicon to back-contact perovskite solar cells","authors":"Waqas Ahmad , Chi Li , Wei Yu , Peng Gao","doi":"10.1016/j.mtelec.2024.100106","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100106","url":null,"abstract":"<div><p>Interdigitated back-contact (IBC) electrode configuration is a novel approach toward highly efficient Photovoltaic (PV) cells. Unlike conventional planar or sandwiched configurations, the IBC architecture positions the cathode and anode contact electrodes on the rear side of the solar cell. This review provides a comprehensive overview of back-contact (BC) solar cells, commencing with the historical context of the inception of the back-contact silicon (BC-Si) solar cells and its progression into various designs such as metallization wrap through, emitter wrap through, and interdigitated configurations. This review emphasizes back-contact perovskite solar cells (BC-PSCs), due to their potential for achieving higher efficiencies and better stability compared to traditional PSC architectures. Herein, we discuss the classification of BC-PSCs based on the position of rear electrodes, including interdigitated and quasi-interdigitated structures. These structures are further analyzed by investigating their implementation via various electrode patterning techniques, such as photolithography, microsphere lithography, cracked film lithography, network-like porous titanium (Ti) electrodes, v-shaped grooves, and lateral-structure perovskite single crystal/shadow masks, used in the development of various types of BC-PSCs. Finally, this review concludes by suggesting potential solutions to the current challenges associated with BC-PSCs to tap into the full potential of this technology. This review aims to provide readers with an in-depth understanding of the latest advancements in BC PV technology, particularly BC-PSCs, and the potential directions for future research and innovation.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000184/pdfft?md5=9c6bb65ce374a79062247a5e86e80822&pid=1-s2.0-S2772949424000184-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141325469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the charge transport behaviour of mxene- polymer nanocomposite-based self-assembled floating films at the air-liquid interface 基于间二甲苯聚合物纳米复合材料的气液界面自组装浮动薄膜的电荷传输行为研究

Materials Today Electronics Pub Date : 2024-09-01 Epub Date: 2024-08-08 DOI: 10.1016/j.mtelec.2024.100112

Radhe Shyam , Shubham Sharma , Shyam S. Pandey , Takaaki Manaka , Rajiv Prakash

{"title":"Study on the charge transport behaviour of mxene- polymer nanocomposite-based self-assembled floating films at the air-liquid interface","authors":"Radhe Shyam , Shubham Sharma , Shyam S. Pandey , Takaaki Manaka , Rajiv Prakash","doi":"10.1016/j.mtelec.2024.100112","DOIUrl":"10.1016/j.mtelec.2024.100112","url":null,"abstract":"<div><p>This study explores the fabrication and charge transport behavior of MXene-polymer nanocomposite-based self-assembled floating films at the air-liquid interface. Utilizing ultrasonic dispersion of MXene nanosheets was integrated into a DPP-TTT polymer matrix, significantly enhancing the alignment and crystallization of the polymer chains. The films were fabricated using a unidirectional floating film transfer method (UFTM), which proved to be both simple and cost-effective. UV–visible and grazing incidence X-ray diffraction (GIXD) analyses confirmed increased π–π stacking and improved structural arrangement within the nanocomposites. Organic field-effect transistors (OFETs) fabricated from these films demonstrated that a 3% MXene inclusion resulted in the highest mobility, measuring 3.1 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> with an on-off ratio in the order of 10<sup>4</sup>, compared to 1.3 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> in pristine DPP-TTT films. However, further increases in MXene content reduced mobility, emphasizing the importance of precise compositional tuning.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100112"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400024X/pdfft?md5=27ac1fc338909c28bb57eed11878f564&pid=1-s2.0-S277294942400024X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics 外延铁电体中具有增强光电性能的多级可切换超域结构

Materials Today Electronics Pub Date : 2024-09-01 Epub Date: 2024-08-23 DOI: 10.1016/j.mtelec.2024.100115

Sheng-Zhu Ho , Yu-Chen Liu , Meng-Xun Xie , Yu-Huai Li , Kai-An Tsai , Chun-Wei Huang , Ying-Chih Pu , Jan-Chi Yang , Yi-Chun Chen

{"title":"Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics","authors":"Sheng-Zhu Ho , Yu-Chen Liu , Meng-Xun Xie , Yu-Huai Li , Kai-An Tsai , Chun-Wei Huang , Ying-Chih Pu , Jan-Chi Yang , Yi-Chun Chen","doi":"10.1016/j.mtelec.2024.100115","DOIUrl":"10.1016/j.mtelec.2024.100115","url":null,"abstract":"<div><p>Ferroic domains and relevant topological defects, such as domain walls and vortices, have gained significant attention as functional units for potential advancements in nanoelectronics. Pb(Zr<sub>x</sub>Ti<sub>1-x</sub>)O<sub>3</sub> (PZT) is a tetragonal ferroelectric material at room-temperature, exhibiting remarkable piezoelectricity and intricate domain structures. In this work, we explore the ferroelectric properties, photoelectric reactions, and efficient manipulation pathways of the unconventional superstructures in epitaxial (101)-oriented PZT thin films. Employing piezoresponse force microscopy (PFM) and conductive atomic force microscopy (cAFM), we unveil the three-dimensional polarization configurations of the superdomain structures inherently featuring conductive charged domain walls. Our findings reveal an increase in photoactivity at the head-side charged domain walls, attributed to the band-bending mechanism. Additionally, we discover the enhanced photoelectrochemical (PEC) performance in the superdomain structures compared to the (101)-oriented PZT films with conventional c/a domains. Furthermore, time-dependent pulse voltages are utilized to dynamically assess local currents and realize direct conductivity modulation by manipulating distinct polarization states. The elucidation of the photoelectrical mechanism and delineation of diverse pathways for intermediate state control underscore the potential of ferroelectric superdomains in constructing functional photoelectronic nanodevices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100115"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000275/pdfft?md5=655c50b1b2c1f8aa88f867ce1cae25f6&pid=1-s2.0-S2772949424000275-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142095981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-dimensional halide perovskites for advanced electronics 用于先进电子器件的低维卤化物过氧化物

Materials Today Electronics Pub Date : 2024-09-01 Epub Date: 2024-08-04 DOI: 10.1016/j.mtelec.2024.100111

Seung Ju Kim , Sungwoo Park , Hyo Min Cho , Ho Won Jang

{"title":"Low-dimensional halide perovskites for advanced electronics","authors":"Seung Ju Kim , Sungwoo Park , Hyo Min Cho , Ho Won Jang","doi":"10.1016/j.mtelec.2024.100111","DOIUrl":"10.1016/j.mtelec.2024.100111","url":null,"abstract":"<div><p>Halide perovskites are gaining prominence as promising materials for future electronic applications, primarily due to their unique properties including long carrier diffusion lengths, tunable bandgap, facile synthesis, and cost efficiency. However, polycrystalline halide perovskite thin films, which have been widely studied to date, have significant drawbacks including uncontrollable grain boundaries and instability issues. Recently, low-dimensional halide perovskites (LD HPs) offer enhanced stability and adaptable morphologies, making them attractive candidates for next-generation electronics beyond optoelectronics. This review comprehensively explores recent advancements in LD HP-based electronics, covering structural characteristics, synthesis methods tailored to different dimensions, and diverse applications. Furthermore, the impressive performance demonstrated by LD HPs in electronic applications including resistive random-access memory, advanced transistors, and neuromorphic computing hardware is discussed. Finally, the review outlines the challenges and perspectives required to scale up LD HP-based advanced electronics for commercial production, offering valuable insights for researchers venturing into the realm of new materials for advanced electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100111"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000238/pdfft?md5=855942b1b823e11c24449a86d4a728d3&pid=1-s2.0-S2772949424000238-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141979480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si 基于远程外延的大气稳定混合石墨烯模板，用于将复杂的铁电氧化物快速、多用途地转移到硅上

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-03-15 DOI: 10.1016/j.mtelec.2024.100091

Asraful Haque, Suman Kumar Mandal, Antony Jeyaseelan, Sandeep Vura, Pavan Nukala, Srinivasan Raghavan

{"title":"Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si","authors":"Asraful Haque, Suman Kumar Mandal, Antony Jeyaseelan, Sandeep Vura, Pavan Nukala, Srinivasan Raghavan","doi":"10.1016/j.mtelec.2024.100091","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100091","url":null,"abstract":"<div><p>Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> (SAO), at the interface and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO<sub>3</sub> (SVO) as a sacrificial buffer layer. We then exploit the well-known enhancement of liquid diffusivities by monolayer graphene to enhance the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid- graphene-SVO- template by growing ferroelectric BaTiO<sub>3</sub> (BTO) via PLD and Pb(Zr, Ti)O<sub>3</sub> (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100091"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000032/pdfft?md5=c2a1c2f28f881120c69c5cb5f4cde82c&pid=1-s2.0-S2772949424000032-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140180499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understand two-dimensional perovskite nanosheets from individual and collective perspectives 从个人和集体角度了解二维过氧化物纳米片

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-04-04 DOI: 10.1016/j.mtelec.2024.100097

Jianing Duan, Hanlin Cen, Jinfei Dai, Zhaoxin Wu, Jun Xi

{"title":"Understand two-dimensional perovskite nanosheets from individual and collective perspectives","authors":"Jianing Duan, Hanlin Cen, Jinfei Dai, Zhaoxin Wu, Jun Xi","doi":"10.1016/j.mtelec.2024.100097","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100097","url":null,"abstract":"<div><p>Two-dimensional (2D) perovskite nanosheets have attracted great attention in recent years due to their unique morphological advantages and high qualifications in constructing miniature optoelectronic devices. However, there remains unexplored aspects regarding the structural evolution during spacer decoupling in nanosheet formation and the recoupling process in heterostructure assembly, which limits the understanding of the nanosheet structure-property relationship. Here, based on the advances and limitations of nanosheet preparations, we recommend further optimization of the synthesis method to achieve quality and prosperity for the whole family (including quasi-2D and Dion-Jacobson phases). Due to structural relaxation stem from extreme reduction of thickness, we propose to explore the microstructural evolution of 2D perovskite nanosheets, e.g. through high-resolution microscopy and spring-mass modeling to understand the different lattice arrangements and vibrational modes of nanosheets compared to bulk materials. Finally, we discuss the preparation and application of heterostructures based on 2D perovskite nanosheets and emphasize the structural rearrangement during van der Waals interface assembly in heterostructures. We hope this work will improve researcher's understanding of structure-property relationship of 2D perovskite nanosheets and accelerate research progress in this field.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100097"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000093/pdfft?md5=c25d5143ddbad73dbca76153c83c40b7&pid=1-s2.0-S2772949424000093-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140536899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanocellulose/zero, one- and two-dimensional inorganic additive based electrodes for advanced supercapacitors 基于纳米纤维素/零、一维和二维无机添加剂的先进超级电容器电极

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-05-15 DOI: 10.1016/j.mtelec.2024.100103

Ashvinder K. Rana , Phil Hart , Vijay Kumar Thakur

{"title":"Nanocellulose/zero, one- and two-dimensional inorganic additive based electrodes for advanced supercapacitors","authors":"Ashvinder K. Rana , Phil Hart , Vijay Kumar Thakur","doi":"10.1016/j.mtelec.2024.100103","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100103","url":null,"abstract":"<div><p>Nowadays, the growing threat of environmental pollution and the energy crisis have accelerated the advancement of sustainable energy sources and highly efficient energy storage technologies. Supercapacitors' outstanding efficiency and accessibility have attracted much interest in portable electronics. However, compared to other energy storage devices, commercially available supercapacitors offer minimal advantages, and it is also very difficult to balance their electrochemical performance, such as cyclability, energy density, and capacitance. Fabricating high-performance supercapacitors with attractive electrical parameters and flexibility depends on the composition of the electrodes.</p><p>Nanocellulose, which is derived from waste biomass because of its high mechanical strength, strong chemical reactivity, and biodegradability, has been used to integrate 2D, 1D, and zero-dimensional inorganic additive materials to develop a promising material for supercapacitor electrodes. The present review summarises recent advancements in the progress of nanocellulose/2D-, 1D-, and zero-dimensional inorganic material-based composite electrodes for their application in supercapacitors. Different strategies for developing nanocellulose/inorganic additive-based composite electrodes are reviewed, and subsequently, the potential of nanocellulose/multidimensional inorganic additive-based electrodes in supercapacitors is fully elaborated. In the end, current challenges and future directions for the development finally, current challenges and future directions for developing nano cellulose-based nanocomposite electrodes in supercapacitors were also discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100103"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000159/pdfft?md5=0aeb3aa2a09d04cb7cb3a9ac7b49a975&pid=1-s2.0-S2772949424000159-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140947279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamical self-rectifying memristors based on halide perovskite nanocrystals 基于卤化物过氧化物纳米晶体的动态自校正忆阻器

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-04-16 DOI: 10.1016/j.mtelec.2024.100098

Ziyu He, Yuncheng Mu, Shu Zhou

{"title":"Dynamical self-rectifying memristors based on halide perovskite nanocrystals","authors":"Ziyu He, Yuncheng Mu, Shu Zhou","doi":"10.1016/j.mtelec.2024.100098","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100098","url":null,"abstract":"<div><p>The integration of rectifying effects with resistance switching in a self-rectifying memristor offers the opportunity to suppress the sneak current in high-density crossbar arrays for energy-efficient neuromorphic computing. Here, we report a new type of two-terminal self-rectifying memristor that gets rid of asymmetric complex structures by using CsPbBr<sub>3</sub> perovskite nanocrystals (NCs). The simple metal-insulator-metal (Au/CsPbBr<sub>3</sub> NCs/Au) configuration that eases integration exhibits multiple resistance states that can be precisely controlled by the stimulus properties and dynamical rectifying characteristics dependent on both the bias voltage and bias time. We have extended an earlier proposed theory that predicts electric-potential-distribution-controlled rectification to rationalize all the observed rectifying behavior that are regulated by mobile-ion-induced interfacial electrochemical reactions and found excellent agreement between theory and experiments. Our study thus demonstrates the possibility of constructing controllable self-rectifying memristors without involving asymmetric complex structures, paving a new way for resolving the sneak current issue in crossbar arrays of memristors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400010X/pdfft?md5=389eb94bd59a27eadeebbfe9e80195d6&pid=1-s2.0-S277294942400010X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140637886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transport studies in piezo-semiconductive ZnO nanotetrapod based electronic devices 基于压电半导体的氧化锌纳米四极管电子器件的传输研究

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-04-30 DOI: 10.1016/j.mtelec.2024.100102

Zhiwei Zhang , Morten Willatzen , Yogendra Kumar Mishra , Zhong Lin Wang

{"title":"Transport studies in piezo-semiconductive ZnO nanotetrapod based electronic devices","authors":"Zhiwei Zhang , Morten Willatzen , Yogendra Kumar Mishra , Zhong Lin Wang","doi":"10.1016/j.mtelec.2024.100102","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100102","url":null,"abstract":"<div><p>ZnO nanotetrapods (ZnO NTs) with a non-centrosymmetric crystal structure consisting of four 1-D arms interconnected together through a central crystalline core, introduce interesting piezoelectric semiconducting responses in nanorods in the bent state. Considering the widespread applications of nanotetrapods in semiconductor devices, it becomes very crucial to establish a coupled model based on piezoelectric and piezotronic effects to investigate the carrier transport mechanism, which is being reported here in detail for the first time. In this work, we established a multiphysics coupled model of stress-regulated charge carrier transport by the finite element method (FEM), which considers the full account of the wurtzite (WZ) and zinc blende (ZB) regions as well as the spontaneous polarization dependence and the dependence of the material properties on the arm orientation. It is discovered that the forward gain of ZnO NT in the lateral force working mode is almost 50 % higher than that in the nanorod or in the normal force working mode while the reverse current is reduced to negligible. Through the simulation calculations and corresponding analysis, it is confirmed that the developed piezoelectric polarization charges are able to regulate the transport and distribution of carriers in ZnO crystal, which lays a theoretical foundation for the application of piezo-semiconductive ZnO NT devices in advanced technologies.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100102"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000147/pdfft?md5=2ebedd9e481331e9ead5e93947b711e5&pid=1-s2.0-S2772949424000147-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140878683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neuromorphic optoelectronic devices based on metal halide perovskite 基于金属卤化物包晶的神经形态光电设备

Materials Today Electronics Pub Date : 2024-06-01 Epub Date: 2024-04-22 DOI: 10.1016/j.mtelec.2024.100099

Qiang Liu , Yiming Yuan , Junchi Liu , Wenbo Wang , Jiaxin Chen , Wentao Xu

{"title":"Neuromorphic optoelectronic devices based on metal halide perovskite","authors":"Qiang Liu , Yiming Yuan , Junchi Liu , Wenbo Wang , Jiaxin Chen , Wentao Xu","doi":"10.1016/j.mtelec.2024.100099","DOIUrl":"10.1016/j.mtelec.2024.100099","url":null,"abstract":"<div><p>Neuromorphic electronics has received increased attention for their application in brain-inspired computing and artificial sensorimotor nerves. Metal halide perovskite (MHP) has been proved to be a candidate material for use in optoelectronic neuromorphic devices. Herein, we review on the recent research progress of MHP materials, with the focus on their applications in neuromorphic optoelectronics. First, we review on the MHP materials that are used for optoelectronic devices especially for neuromorphic applications, in the sequence of all-inorganic, organic-inorganic hybrid and lead-free MHP materials. Then, we summarize the design and fabrication of two-terminal (2-T) and three-terminal (3-T) synaptic devices, including working mechanisms as operated by electrical and light inputs, and the relationship between electrical properties with material composition and structure of functional layers. Finally, we review on the applications of these devices on pattern recognition, bionic vision, neuromorphic sensing and modulation, experience and associative learning, logic computing and high-pass filtering. This review aims could potentially inspire future research in the field of neuromorphic optoelectronic electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100099"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000111/pdfft?md5=af0465cbab37d185fe7f89f726c66208&pid=1-s2.0-S2772949424000111-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140792636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0