Materials Today Electronics最新文献

{"title":"Stable Hybrid Perovskite Materials for Photovoltaics Under Real-World Conditions","authors":"","doi":"10.1016/j.mtelec.2023.100038","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100038","url":null,"abstract":"","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cross-shape reconfigurable field effect transistor for flexible signal routing","authors":"Cigdem Cakirlar ,&nbsp;Maik Simon ,&nbsp;Giulio Galderisi ,&nbsp;Ian O'Connor ,&nbsp;Thomas Mikolajick ,&nbsp;Jens Trommer","doi":"10.1016/j.mtelec.2023.100040","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100040","url":null,"abstract":"<div><p>Reconfigurable field effect transistors are one of the most promising emerging device concepts for future computing systems, due to their dynamic p- and n-channel behavior. Over the past decade, there have been significant advances on electrical characteristics and circuit designs, but there are still many additional options to explore. In this letter, a disruptive common-channel reconfigurable filed effect transistor concept is presented experimentally for the first time. A cross-shape integrated nanowire structure is fabricated on a silicon-on-insulator wafer using top-down methods for higher reproducibility. The fabricated cross-shape reconfigurable field effect transistor is composed of a doping-free common channel with four independent silicided source and drain junctions, a silicon dioxide dielectric layer and four independent gates aligned on top of the silicide junctions. By assembling this unique common-channel structure, device level current routing was provided. A detailed comprehensive study of the cross-shape reconfigurable field effect transistor electrical characteristics are presented. The fabricated device demonstrates nearly equal transistor characteristics for each branch, which enables new complementary circuit designs to be introduced. We demonstrated an inverter and a multiplexer circuit both built from the same two transistors with enhanced functionality when compared to a single source configuration.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tactile perception in hydrogel-based robotic skins using data-driven electrical impedance tomography","authors":"David Hardman ,&nbsp;Thomas George Thuruthel ,&nbsp;Fumiya Iida","doi":"10.1016/j.mtelec.2023.100032","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100032","url":null,"abstract":"<div><p>Combining functional soft materials with electrical impedance tomography is a promising method for developing continuum sensorized soft robotic skins with high resolutions. However, reconstructing the tactile stimuli from surface electrode measurements is a challenging ill-posed modelling problem, with FEM and analytic models facing a reality gap. To counter this, we propose and demonstrate a model-free superposition method which uses small amounts of real-world data to develop deformation maps of a soft robotic skin made from a self-healing ionically conductive hydrogel, the properties of which are affected by temperature, humidity, and damage. We demonstrate how this method outperforms a traditional neural network for small datasets, obtaining an average resolution of 12.1 mm over a 170 mm circular skin. Additionally, we explore how this resolution varies over a series of 15,000 consecutive presses, during which damages are continuously propagated. Finally, we demonstrate applications for functional robotic skins: damage detection/localization, environmental monitoring, and multi-touch recognition - all using the same sensing material.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49885000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes","authors":"Abdulaziz Almalki ,&nbsp;Labed Madani ,&nbsp;Nouredine Sengouga ,&nbsp;Sultan Alhassan ,&nbsp;Saud Alotaibi ,&nbsp;Amra Alhassni ,&nbsp;Amjad Almunyif ,&nbsp;Jasbinder S. Chauhan ,&nbsp;Mohamed Henini ,&nbsp;Helder Vinicius Avanço Galeti ,&nbsp;Yara Galvão Gobato ,&nbsp;Marcio Peron Franco de Godoy ,&nbsp;Marcelo B. Andrade ,&nbsp;Sérgio Souto ,&nbsp;Hong Zhou ,&nbsp;Boyan Wang ,&nbsp;Ming Xiao ,&nbsp;Yuan Qin ,&nbsp;Yuhao Zhang","doi":"10.1016/j.mtelec.2023.100042","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100042","url":null,"abstract":"<div><p>In this study, the effect of rapid thermal annealing (RTA) on the electrical and optical properties of NiO/ β-Ga₂O₃ heterojunction diodes was investigated using capacitance-voltage, current-voltage, Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, photoluminescence and micro-Raman spectroscopy techniques, and SILVACO-TCAD numerical simulator. The NiO is designed to be lowly-doped, allowing for the NiO full depletion at zero bias and the study of properties of β-Ga₂O₃ and its interface with NiO. Micro-Raman results revealed good agreement with the theoretical and experimental results reported in the literature. The photoluminescence intensity of the sample after RTA is five times higher than the fresh sample due to a rise in the density of gallium and oxygen vacancies (V_Ga + V_O) in the annealed β-Ga₂O₃ samples. The current-voltage characteristics showed that annealed devices exhibited a lower ideality factor at room temperature and higher barrier height compared with fresh samples. The DLTS measurements demonstrated that the number of electrically active traps were different for the two samples. In particular, three and one electron traps were detected in fresh samples and annealed samples, respectively. SILVACO-TCAD was used to understand the distribution of the detected electron E₂ trap (E_c-0.15 eV) in the fresh sample and the dominant transport mechanisms. A fairly good agreement between simulation and measurements was achieved considering a surface NiO acceptor density of about 1 × 10¹⁹ cm⁻³ and E₂ trap depth into the surface of β-Ga₂O₃ layer of about 0.220 µm and the effect of the most observed E_c-0.75 eV trap level in β-Ga₂O₃. These results unveil comprehensive physics in NiO/β-<span><math><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub><mspace></mspace></mrow></math></span>heterojunction and suggest that RTA is an essential process for realizing high-performance NiO/β-<span><math><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub><mspace></mspace></mrow></math></span>devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From fundamentals to applications: The development of magnetoplasmonics for next-generation technologies","authors":"Rahulkumar Sunil Singh,&nbsp;Prashant K Sarswat","doi":"10.1016/j.mtelec.2023.100033","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100033","url":null,"abstract":"<div><p>Magnetoplasmonics is an emerging interdisciplinary field that studies the interaction between magnetism and plasmonics, and has great promise for the development of novel optical, magnetic, and spintronic devices. The goal of this review is to provide a comprehensive overview of the current state-of-the-art in magnetoplasmonics, including the fundamentals, materials, and applications. The review first presents an introduction to the basic concepts of magnetoplasmonics, magneto-optical and plasmonic materials, and the various ways in which they can be combined to create novel hybrid systems. The review then examines the influence of surface plasmon resonances on the magneto-optical properties of a system as well as the achievement of balance of magneto-optical and surface plasmon properties to maximize the overall magnetoplasmonic properties. Selected major applications in biomedicine, biomedical technologies, optoelectronics and telecommunications are then discussed. Finally, it concludes with key challenges in the use of magnetoplasmonics in these applications, the need for new materials, new fabrication approaches, and further understanding to control the complex interactions between magnetism and plasmonics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bistable Resistive Memory Switches fabricated by Floating Thin Films of Conjugated Polymers","authors":"Shubham Sharma ,&nbsp;Nikita Kumari ,&nbsp;Shuichi Nagamatsu ,&nbsp;Masakazu Nakamura ,&nbsp;Shyam S. Pandey","doi":"10.1016/j.mtelec.2023.100043","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100043","url":null,"abstract":"<div><p>The layer-by-layer (LBL) fabrication of conjugated polymer (CPs) thin films while preserving their microstructural features by solution processing is highly desired for compact and flexible electronic circuits. However, it is cumbersome and challenging owing to the unavoidable damage to the underlying layers. To circumvent this issue, the unidirectional floating-film transfer method (UFTM) was utilized for the LBL fabrication of oriented CP thin films on the orthogonal liquid surfaces. Further, resistive bistable memory switches were fabricated by sandwiching a layer of metal nanostructures between the LBL-fabricated oriented CP thin films. The resistive switching phenomena were realized by utilizing the applied bias-dependent charge trapping, holding, and recombination on the available states at vacuum-deposited aluminum nanostructures. The effect of CP backbone conformation on the vertical charge transport was also analyzed via a comparative study of three thiophene-based polymers namely RR-P3HT, PBTTT, and PTB-7. It was revealed that CPs with relatively fewer hydrophobic side chains was more favorable for the facile vertical charge transport due to its preferred face-on conformation on the hydrophilic liquid substrate used in UFTM. It was demonstrated that a non-volatile bistable resistive memory switch fabricated using UFTM-processed oriented thin films of PTB-7 exhibited a remarkably high on-off ratio of 1.5 × 10⁶ with high durability.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49884397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural network approach for ferroelectric hafnium oxide phase identification at the atomistic scale","authors":"Zhiheng Cheng,&nbsp;Xingran Xie,&nbsp;Yimin Yang,&nbsp;Chaolun Wang,&nbsp;Chen Luo,&nbsp;Hengchang Bi,&nbsp;Yan Wang,&nbsp;Junhao Chu,&nbsp;Xing Wu","doi":"10.1016/j.mtelec.2023.100027","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100027","url":null,"abstract":"<div><p>The hafnia-based ferroelectric oxides with excellent negative-capacitance properties offer a great opportunity to develop high-performance integrated circuits. The nanosized multiphase distribution of Hf_0.5Zr_0.5O₂ (HZO) has a significant influence on its ferroelectric properties. Transmission electron microscope (TEM) with an atomistic resolution could establish the structure-property relationship and guide the performance improvement of HZO by identifying its phase structures. However, the high throughput TEM data and its complexity of interpretation make the quantitatively extracting the physical and chemical information from the TEM images challenging and low-efficiency. Here, we develop an automatic work flow for the TEM data analysis, which greatly enhances the efficiency of TEM data processing. By extracting the interest area and training the neural network with ResNet18, the accuracy of phase determination reaches 95.82% with low computational cost. Theoretical analysis is conducted to unveil the advantages of the ResNet18 network. The approach provided in this work could promote the quantitative analysis of the high-throughput TEM images and pave the way for future on-line analysis of the TEM image stream in real-time.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The structural, optical and electrical properties of sodium titanate nanotubes sensitized with nitrogen/sulfur co-doped graphene quantum dots as potential materials for quantum dots sensitized solar cells","authors":"Martin Esteves ,&nbsp;Dominique Mombrú ,&nbsp;Mariano Romero ,&nbsp;Luciana Fernández-Werner ,&nbsp;Ricardo Faccio ,&nbsp;Alvaro W. Mombrú","doi":"10.1016/j.mtelec.2023.100029","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100029","url":null,"abstract":"<div><p>In this work, we present the synthesis of nanoscale heterostructures of sodium titanate nanotubes Na₂Ti₂O₅.H₂O (NaNT) decorated with N- and S- co-doped graphene quantum dots (NS-GQD) for quantum dots sensitized solar cells (QDSSC). The study was mainly focused on the structural, microstructural, electrical and optical characterization of these nanoscale heterostructures by means of X ray diffraction, transmission electron microscopy, atomic force microscopy, Raman, UV–vis and impedance spectroscopies. Our nanoscale heterostructures yielded a significant enhancement in the electric conductivity interpreted in terms of favorable interactions between the NS-GQD and the NaNT acting as proper connectors. Finally, our QDSSC prototype exhibits promising values for diffusion coefficient and recombination times as evidenced by means of impedance modulated photocurrent and photovoltage spectroscopies. Also, we consider that these materials could be further explored for electron transport layers applications in order to exploit the advantages regarding electron transport properties.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in organic transistors for artificial perception applications","authors":"Wei Wang ,&nbsp;Zihan He ,&nbsp;Chong-an Di ,&nbsp;Daoben Zhu","doi":"10.1016/j.mtelec.2023.100028","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100028","url":null,"abstract":"<div><p>The rise of intelligent matter and bioelectronics enables the booming development of perception-functionalized devices to serve as a cutting-edge area. Organic field-effect transistors (OFETs) are considered to be attractive candidates for artificial perception applications not only because of their intrinsic flexibility, biocompatibility and solution processability, but also owning to their unique features in efficient molecule design and diverse interface engineering. In this review, we summarized the recent advances and perspectives for organic transistors toward various artificial perception applications. We first introduce the fundamentals of perception-functionalized OFETs. Thereafter, the recent progress in sensors, synaptic transistors and adaptive devices are overviewed. Moreover, we summarized six strategies towards perception-functionalized OFETs, and finally proposed challenges and opportunities of organic transistors in this flourishing field.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile hydrothermally synthesized nanosheets-based Cu0.06-xNi0.03Sn0.03+xS0.12 flower for optoelectronic and dielectric applications","authors":"D. Sahoo ,&nbsp;S. Senapati ,&nbsp;S. Samal ,&nbsp;Sagar Bisoyi ,&nbsp;R. Naik","doi":"10.1016/j.mtelec.2023.100030","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100030","url":null,"abstract":"<div><p>The present investigation reports the preparation of Cu_0.06-xNi_0.03Sn_0.03+xS_0.12 (CNTS) nanosheets (NS) by hydrothermal method and its dielectric and optical behavior. The as-prepared CNTS samples with different Sn content exhibit polycrystalline nature with primary stannite phase along with several secondary phases. The CNTS samples show nanoflower-like morphology consisting of self-assembled NS of an average thickness of 40–50 nm. The morphology remains invariant, but a variation in the band edge absorption and corresponding bandgap variation is observed for the increase in Sn content. The photoluminescence emission with 532 nm excitation of CNTS nanosheets shows the peaks in orange-red regions. The visible emission is primarily due to the presence of different defect states in the NS. From the frequency and temperature-dependent dielectric study, AC conductivity and the impedance spectroscopy-related parameters were evaluated. In the low-frequency region, the CNTS behaves like an unpolarized material, whereas in the high-frequency region, it facilitates the hopping of charge carriers due to the increased frequency range. The electrical conduction is due to the cumulative result of the hopping of charge carriers across the barrier potential and tunneling of polarons formed due to lattice distortion at high temperatures. The behavior of the complex impedance parameters validates the negative temperature coefficient of resistance and the decrease in bulk resistance with the increase in temperature. The tunable semiconducting properties, along with the excellent optical and dielectric behavior of the CNTS materials, promote its application in various cutting-edge optoelectronic and dielectric devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49892256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}