Zhenghao Long , Yucheng Ding , Swapnadeep Poddar , Leilei Gu , Qianpeng Zhang , Zhiyong Fan
{"title":"Bio-inspired visual systems based on curved image sensors and synaptic devices","authors":"Zhenghao Long , Yucheng Ding , Swapnadeep Poddar , Leilei Gu , Qianpeng Zhang , Zhiyong Fan","doi":"10.1016/j.mtelec.2023.100071","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100071","url":null,"abstract":"<div><p>Vision is our dominant sense and is also highly desired in artificial systems. In this article, we provide an overview of bio-inspired visual systems that utilize curved image sensors and/or photonic synapses. The use of curved detector geometry ensures clear image sensing abilities with fewer optical elements, which has the potential to lead to miniaturization. Additionally, photonic synapses that integrate light sensing and neuromorphic preprocessing can reduce redundant modules and signal communications. This results in decreased device size and energy consumption. In this review, we begin by summarizing the fabrication processes of curved image sensors, followed by a review of typical bionic eye systems. Next, we discuss the materials and device structures of typical photonic synapses and related imaging systems. We also review the combinations of curved image sensors and photonic synapses. Finally, we summarize the key advantages and challenges of current bio-inspired visual systems.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100071"},"PeriodicalIF":0.0,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000475/pdfft?md5=ce9bd30c607ba9ae62d0eb77b147a998&pid=1-s2.0-S2772949423000475-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"92101472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent advances in synthesis of two-dimensional non-van der Waals ferromagnetic materials","authors":"Hongtao Ren , Gang Xiang","doi":"10.1016/j.mtelec.2023.100074","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100074","url":null,"abstract":"<div><p>Due to their strong covalent binding interaction between adjacent layers, it was difficult to exfoliate non-layered materials compared to layered materials. Recently, Balan, et al. (<em>Nat. Nanotechnol.</em> 13, 602–609, 2018) prepared a non-van der Waals (non-vdW) two-dimensional (2D) hematene from hematite (α-Fe<sub>2</sub>O<sub>3</sub>) by liquid exfoliation. Subsequently, various approaches including chemical vapor deposition (CVD), molecular beam epitaxy (MBE), ion layer epitaxy (ILE), pulsed laser deposition (PLD), and polymer assisted deposition (PAD) have been developed. Notably, a general thermodynamics-triggered competitive growth (TTCG) model was proposed to design a new hydrate-assisted CVD (HACVD) of the 2D non-layered materials growth. Although existing methods have achieved some good results, there are still many obstacles to overcome. In this review, we aim to give an overview on the recent advances and challenges in synthesis of 2D non-vdW ferromagnetic materials, and future prospects of 2D non-layered materials.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100074"},"PeriodicalIF":0.0,"publicationDate":"2023-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000505/pdfft?md5=c0b02f107d4ea0e88eac2f7c9bf6bda5&pid=1-s2.0-S2772949423000505-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"92101476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Van der Waals engineering toward designer spintronic heterostructures","authors":"Jizhe Song , Jianing Chen , Mengtao Sun","doi":"10.1016/j.mtelec.2023.100070","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100070","url":null,"abstract":"<div><p>This perspective explores the emerging field of spintronics within the context of two-dimensional van der Waals (vdW) heterostructures. Spintronics has opened exciting possibilities in the realm of two-dimensional (2D) materials. The integration of diverse 2D materials within vdW heterostructures has unveiled a plethora of previously unknown physical phenomena and potential applications related to spin-dependent transport, gate-tunable spin transport, spin filtering effects, and the emergence of ferromagnetism. These advancements have expanded the scope of spintronics beyond traditional bulk materials, offering unique opportunities for efficient spin injection, manipulation, and detection in 2D devices. A deep understanding of how different materials and interfaces are interconnected and how they affect spin properties is essential for improving the effectiveness and control of spin injection and detection. The study of spintronics in vdW heterostructures holds great promise for advancing the frontiers of developing the next generation of spintronic and quantum devices, revolutionizing information technology and nanoelectronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100070"},"PeriodicalIF":0.0,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaochuan Xi , Cenqi Yan , Larry Zhongxin Shen , Yinghan Wang , Pei Cheng
{"title":"Liquid crystal photoalignment technique: Basics, developments, and flexible/stretchable device applications","authors":"Xiaochuan Xi , Cenqi Yan , Larry Zhongxin Shen , Yinghan Wang , Pei Cheng","doi":"10.1016/j.mtelec.2023.100069","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100069","url":null,"abstract":"<div><p>The liquid crystal photoalignment technique is a non-contact approach to establishing liquid crystal alignment using light irradiation, with the advantages of being non-polluting and non-electrostatic, and allowing facile microdomain orientation, compared with the rubbing alignment method. This review covers three categories of photoalignment under polarized light irradiation: photoisomerization, photodegradation, and photo-crosslinking. Photosensitive materials, such as azobenzene, polyimide, and cinnamate, are also introduced. Nonpolarized photoalignment technique is also presented. This review also summarizes the methods of controlling pretilt angle and increasing photosensitivity and several applications of the photoalignment technique. The photoalignment technique has considerable promise and value for liquid crystal displays, spatial filters, and flexible/stretchable devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100069"},"PeriodicalIF":0.0,"publicationDate":"2023-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000451/pdfft?md5=c965a03dc7cb7bd32fd15459e696556a&pid=1-s2.0-S2772949423000451-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"92149046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liwei Liu , Xuan Song , Xinyu Huang , Hongyan Ji , Ziying Hu , Yuan Huang , Hong-Jun Gao , Yeliang Wang
{"title":"Review: Exploring spin properties in van der Waals materials with star-of-David pattern","authors":"Liwei Liu , Xuan Song , Xinyu Huang , Hongyan Ji , Ziying Hu , Yuan Huang , Hong-Jun Gao , Yeliang Wang","doi":"10.1016/j.mtelec.2023.100068","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100068","url":null,"abstract":"<div><p>The spin properties in van der Waals (vdW) low-dimensional materials have attracted increasing research interest due to their potential application in future nano-spintronic devices. Among the vast members of vdW materials, those with star-of-David (SOD) charge density wave (CDW) patterns are emergent. Here, we give a review of the recent experimental and theoretical progress achieved on this kind of material. First, the features and advantages of exploring spin properties in SOD materials are briefly introduced. Second, the influences of different stacking on the spin properties of SOD systems are discussed, from single-layer to bilayer and then to bulk with different phase combinations by taking advantage of the vdW nature, manifesting various spin phenomena such as the 120° in-plane antiferromagnetism, quantum spin liquid, and the Kondo effect. Then we give some examples of manipulation methods such as doping, strain, and electric field, which can induce the change of spin features. Finally, the current challenges and opportunities at the frontier in this research field are discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100068"},"PeriodicalIF":0.0,"publicationDate":"2023-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Di Wang , Ziwei Wang , Sheng Jiang , Long Liu , Huai Lin , Yifan Zhang , Ruifeng Tang , Xi Luo , Guozhong Xing
{"title":"Field-free domain wall spin torque nano-oscillators with multimodal real-time modulation and high-quality factor","authors":"Di Wang , Ziwei Wang , Sheng Jiang , Long Liu , Huai Lin , Yifan Zhang , Ruifeng Tang , Xi Luo , Guozhong Xing","doi":"10.1016/j.mtelec.2023.100065","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100065","url":null,"abstract":"<div><p>We report on a magnetic domain wall (DW)-based spin torque nano-oscillator (STNO) with real-time multimodal frequency modulation characteristics by engineering the synergistic effect of shape anisotropy, Dzyaloshinskii-Moriya interaction (DMI), and spin-transfer torque. The achieved manageable oscillation and precession of magnetic DW motivate us to implement such attributes into the developed STNO under a low current density of ∼10<sup>7</sup> A/cm<sup>2</sup>, which demonstrates outstanding functionality of multimodal real-time modulation ranging from few GHz and sub-THz with corresponding few tens and >10<sup>4</sup> quality factor (<em>f</em><sub>STNO</sub>/Δ<em>f<!--> </em>) in absence of external magnetic field. Furthermore, the dynamic process of DW motion and magnetic moment precession under different modes has been revealed systematically, and the frequency dependence of various physical parameters including damping constant, uniaxial anisotropy constant, saturation magnetization, exchange stiffness, and DMI constant has also been summarized in detail. Such a DW-based device enriches the STNO family and promises great potential with a broad spectrum of applications in microwave generators and neuromorphic computing.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100065"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Exploring amorphous Ge-As-Se-Te as an active layer candidate in memristive devices","authors":"Wagner Correr, Corinne Chouinard, Sandra Messaddeq, Younes Messaddeq","doi":"10.1016/j.mtelec.2023.100064","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100064","url":null,"abstract":"<div><p>The implementation of resistive switches in neuromorphic computing and long-term data storage has been delayed by inherent difficulties in their fabrication process, their stability and reproducibility. Low operating voltages, high-density integration and low energy consumption are common challenges in resistive switch design. Here, we report the implementation of a resistive switch based on the amorphous semiconductor Ge<span><math><msub><mrow></mrow><mrow><mn>15</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>25</mn></mrow></msub></math></span>Se<span><math><msub><mrow></mrow><mrow><mn>15</mn></mrow></msub></math></span>Te<span><math><msub><mrow></mrow><mrow><mn>45</mn></mrow></msub></math></span> (GAST) between an inert (W) and an active (Ag) electrode. The device was built using contact photolithography and standard microfabrication techniques, allowing the integration with traditional manufacturing processes. The device is able to switch at voltages as low as 0.15<!--> <!-->V and 0.6<!--> <!-->V, when operating in DC and pulsed conditions, respectively. Our results suggest that the adoption of mixed conductors such as GAST may yield devices that operate at low voltages and low energy for neuromorphic applications.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100064"},"PeriodicalIF":0.0,"publicationDate":"2023-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiayi He , Han Yuan , Min Nie , Hai Guo , Hongya Yu , Zhongwu Liu , Rong Sun
{"title":"Soft magnetic materials for power inductors: State of art and future development","authors":"Jiayi He , Han Yuan , Min Nie , Hai Guo , Hongya Yu , Zhongwu Liu , Rong Sun","doi":"10.1016/j.mtelec.2023.100066","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100066","url":null,"abstract":"<div><p>Soft magnetic materials play important roles in both power generation and conversion devices. One of their important applications is power inductor, which acts as an energy transfer station, transferring the direct current energy and blocking the high-frequency alternating current. With the rapid development of circuit topologies and power semiconductors, the power inductors with higher inductance performance, smaller size and higher energy efficiency are required. Based on the world-wide progress, this review gives a comprehensive and critical description on the fundamentals and development of the soft magnetic materials for the power inductors. The relationship between the properties of soft magnetic materials and the inductance performance of device is discussed in detail. The industry status of the power inductors based on both soft ferrites and soft magnetic composites (SMCs) is analyzed. The material selection, fabrication process and microstructure-properties relationships for ferrites and SMC materials are summarized. In particular, this review emphatically compares the difference between the conventional magnetic cores and the multilayer/molding inductors in processing and material selection. The challenges and opportunities of the soft magnetic materials are also highlighted for future development.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100066"},"PeriodicalIF":0.0,"publicationDate":"2023-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Smart nanomaterials to support quantum-sensing electronics","authors":"Vibhas Chugh , Adreeja Basu , Nagendra Kumar Kaushik , Ajeet Kaushik , Yogendra Kumar Mishra , Aviru Kumar Basu","doi":"10.1016/j.mtelec.2023.100067","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100067","url":null,"abstract":"<div><p>Quantum sensing electronic sensing is opening up new cutting-edge possibilities to take advantage of complex quantum mechanical variables to make incredibly sensitive assessments of an array of parameters. Concurrently, there are new prospects for quantum sensing electronics to be used to enhance the processes involved in creating, distributing, and utilizing energy. To use this technology efficiently, it is necessary to handle issues related to sensing material such as stability and operation, reliable monitoring, and precision in sensing and assessment. In this direction, the present is an overview of existing and new quantum sensing materials and methods, along with the related sensing frameworks that have been created to support their advanced translational applications. Regarding next-generation sensing technologies specifically, the realization of a previously unheard degree of sensitivity is made possible using quantum methods and materials. More specifically, this article addresses how quantum sensing materials may lead to greater efficiency while highlighting established and developing quantum sensing methods, materials, and sensing platforms. The discussion of potential chances to implement quantum technologies follows a summary of the remaining obstacles and difficulties for quantum sensor deployment.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100067"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anil Bastola , Yinfeng He , Jisun Im, Geoffrey Rivers, Feiran Wang, Robyn Worsley, Jonathan S. Austin, Oliver Nelson-Dummett, Ricky D. Wildman, Richard Hague, Christopher J. Tuck, Lyudmila Turyanska
{"title":"Formulation of functional materials for inkjet printing: A pathway towards fully 3D printed electronics","authors":"Anil Bastola , Yinfeng He , Jisun Im, Geoffrey Rivers, Feiran Wang, Robyn Worsley, Jonathan S. Austin, Oliver Nelson-Dummett, Ricky D. Wildman, Richard Hague, Christopher J. Tuck, Lyudmila Turyanska","doi":"10.1016/j.mtelec.2023.100058","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100058","url":null,"abstract":"<div><p>Inkjet printing offers a facile route for manufacturing the next generation of electronic devices, by combining the design freedom of additive manufacturing technologies with tuneable properties of functional materials and opportunities for their integration into heterostructures. However, to fully realise this potential, the library of functional materials available for additive manufacturing technologies needs to be expanded. In this review, we summarise current developments in ink formulation strategies, approaches for tailoring the functional properties of inks, and multi-material processing. Material – process – property relationships are reviewed for emerging functional materials, such as polymers, nanomaterials, and composites, with examples of current state-of-the-art devices. The flexibility of combining inkjet deposition with other existing technologies and a variety of substrates is also discussed reviewing current trends in electronics and optoelectronics, including wearable electronics, sensing, and energy applications. The review offers a comprehensive and systematic overview of ink formulations for inkjet deposition of electronic devices, summarising the challenges and perspectives in the advancement of 3D and multi-functional electronic devices and smart electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100058"},"PeriodicalIF":0.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}