Materials Today Electronics最新文献

{"title":"Coherent epitaxy of HfxZr1-xO2 thin films by high-pressure magnetron sputtering","authors":"Tengteng Zhang ,&nbsp;Yuyan Fan ,&nbsp;Zhipeng Xue ,&nbsp;Mengwei Si ,&nbsp;Zhen Wang ,&nbsp;Xiuyan Li ,&nbsp;Yanwei Cao","doi":"10.1016/j.mtelec.2024.100124","DOIUrl":"10.1016/j.mtelec.2024.100124","url":null,"abstract":"<div><div>Due to remarkable high-k and ferroelectric properties in CMOS devices, the study of crystalline Hf_xZr_1-xO₂ (HZO) thin films has attracted tremendous interest recently. However, up to now, the epitaxial growth of HZO films has only been achieved by pulse laser deposition, a technique scarcely utilized in CMOS devices. Therefore, developing appropriate epitaxial methods of HZO films (such as sputtering) is fairly necessary, but a challenge at present. In this work, high-quality single-crystalline HZO films were synthesized by high-pressure magnetron sputtering. The epitaxial growth of HZO films on yttria-stabilized zirconia (YSZ) substrate was demonstrated by a combination of high-resolution X-ray diffraction, atom force microscope, and scanning transmission electron microscope. In addition, good insulating characteristics were obtained by replacing insulating substrates with conductive substrates as electrodes. Our results provide a novel way for the epitaxial growth of the single-crystalline structure of HZO thin films towards the high performance of high-k and ferroelectric devices.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100124"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142699703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semiconductor sensing surfaces via oxygen-injection treatment","authors":"Xiaowu Wang,&nbsp;Zhenggang Xue,&nbsp;Jiaqiang Xu","doi":"10.1016/j.mtelec.2024.100120","DOIUrl":"10.1016/j.mtelec.2024.100120","url":null,"abstract":"","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100120"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanotwinned thermoelectric materials","authors":"Ting-Rui Luo ,&nbsp;Yingchao Wei ,&nbsp;Zheng Ma ,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2024.100128","DOIUrl":"10.1016/j.mtelec.2024.100128","url":null,"abstract":"<div><div>Thermoelectric materials is the key energy conversion unit of thermoelectic module, whose figure of merit <em>ZT</em> determines largely the energy conversion efficiency of thermoelectric modules. Therefore, how to improve the <em>ZT</em> values of thermoelectric materials has become a research focus in thermoelectric community. Recently, nanotwins have attracted great attention in thermoelectric community because of its merits of low carrier scattering, strong phonon scattering, and effective hindering effect on dislocation motion. Theoretical and experimental studies have shown that nanotwins have great potential in improving the thermoelectric properties (i.e., figure of merit <em>ZT</em>) and mechanical properties (e.g., plastic deformation strength, fracture toughness) of thermoeletric materials. Herein, we summary the progress of theoretical and experimental reseach on nanotwinned thermoelectric materials, including bismuth telluride alloys, Cu-Sn-S based semiconductors, InSb semiconductor, constantan based alloys, and high entropy semiconductor, providing feasible reference for nanotwins design of other thermoelectric materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100128"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High responsivity and detectivity β-Ga2O3 solar-blind photodetectors optimized by oxygen vacancy engineering","authors":"Yi Long ,&nbsp;Kun Ba ,&nbsp;Jie Liu ,&nbsp;Xiaolei Deng ,&nbsp;Yunxiang Di ,&nbsp;Ke Xiong ,&nbsp;Yan Chen ,&nbsp;Xudong Wang ,&nbsp;Chang Liu ,&nbsp;Ziqing Li ,&nbsp;Dandan Liu ,&nbsp;Xiaosheng Fang ,&nbsp;Qi Liu ,&nbsp;Jianlu Wang","doi":"10.1016/j.mtelec.2024.100116","DOIUrl":"10.1016/j.mtelec.2024.100116","url":null,"abstract":"<div><p>Solar-blind photodetectors (SBPDs) are core essential components for many critical applications such as precision guidance, fire warning, and space communications. Ultra-wide bandgap semiconductor β-Ga₂O₃ is considered to be an ideal material for the fabrication of SBPDs. However, synthetizing β-Ga₂O₃ with high quality factor while simultaneously in situ modulation of electronic and optoelectronic properties to enhance performance has been challenging. Here, pulsed laser deposition (PLD) technology is used to synthesize high-quality β-Ga₂O₃ thin films on a sapphire substrate. The oxygen vacancy engineered β-Ga₂O₃ films can achieve in situ precise control of their surface morphology, optical parameters, and optoelectronic properties by simply adjusting the oxygen pressure. Meanwhile, the optimal thickness of the β-Ga₂O₃ film for the developing high-performance SBPD is ∼221 nm, determined by fitting and analyzing the optical parameters measured by the ellipsometry. Subsequently, the influence of oxygen pressure on the performance of β-Ga₂O₃ SBPD is thoroughly explored, considering the optimization of electrode size and deposition time. When the oxygen pressure is set to 15 Pa, the β-Ga₂O₃-based SBPD achieves highly competitive responsivity (<em>R</em>) and detectivity (<em>D*</em>) at 250 nm, with values of 1080 A·W⁻¹ and 1.4 × 10¹⁶ cm·W⁻¹·Hz^1/2, respectively. Additionally, the noise component of the β-Ga₂O₃ SBPD is further studied to calibrated the traditional device performance results. This work introduces a simple and straightforward approach to in situ tuning of the optoelectronic properties of β-Ga₂O₃, which is important for advancing β-Ga₂O₃ film growth technology and fabricating high-performance photodetectors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000287/pdfft?md5=9fbc471e969c83d076214df69c5b1132&pid=1-s2.0-S2772949424000287-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142241734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolayer nodal line semimetal AgTe as gate-reconfigurable ‘cold’ Ohmic contact to 2D semiconductors MoSi2N4 and WSi2N4","authors":"Tong Su ,&nbsp;Yueyan Li ,&nbsp;Weiwei Zhao ,&nbsp;Liemao Cao ,&nbsp;Yee Sin Ang","doi":"10.1016/j.mtelec.2024.100123","DOIUrl":"10.1016/j.mtelec.2024.100123","url":null,"abstract":"&lt;div&gt;&lt;div&gt;MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; are air-stable two-dimensional (2D) semiconductors promising for next-generation electronics applications. However, the challenge of forming high-quality Ohmic contacts with these materials must be addressed before their potential can be fully unlocked. In this work, we investigate the role of AgTe, a recently synthesized topological nodal line semimetal, as a high work function (&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;W&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;M&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;) semimetallic contact for MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; using first-principles density functional theory (DFT) simulations. Phonon dispersion and &lt;em&gt;ab initio&lt;/em&gt; molecular dynamics simulations confirm the structural stability of AgTe/MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and AgTe/WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; heterostructures. The high-&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;W&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;M&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; nature of AgTe leads to &lt;span&gt;&lt;math&gt;&lt;mi&gt;p&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type Schottky contacts. We show that electrostatic gate-induced charge doping, which can be introduced using practically achievable gating conditions, can tune the heterostructure between &lt;span&gt;&lt;math&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type and &lt;span&gt;&lt;math&gt;&lt;mi&gt;p&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type Ohmic contacts, thus suggesting the potential of AgTe/MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and AgTe/WSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; as gate-reconfigurable contact useful for CMOS device applications. Notably, the presence of a ‘mini gap’ above the semimetallic bands in AgTe enables the formation of &lt;span&gt;&lt;math&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-type ‘cold’ Ohmic contact which is useful for steep-slope device beyond the &lt;em&gt;Boltzmann’s tyranny&lt;/em&gt;. These findings reveal the potential of AgTe as an electrically tunable Ohmic contacts to MoSi&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;N&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100123"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142533929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution","authors":"Guanzheng Luo,&nbsp;Wang Li,&nbsp;Yingchao Wei,&nbsp;Yao Dai,&nbsp;Wenjie Shu,&nbsp;Linyao Wu,&nbsp;Xin Li,&nbsp;Yubo Luo,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2024.100126","DOIUrl":"10.1016/j.mtelec.2024.100126","url":null,"abstract":"<div><div>Cu₃InSnSe₅ is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe₂ precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe₂ precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak <em>ZT</em> of 1.00 and an average <em>ZT</em> of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu₃InSnSe₅ pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100126"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Material Design and Discovery in Full-Heusler Compounds: A Comprehensive First-Principles Analysis of XMg2Hg, XMgHg2, and X2MgHg (X = Sc, Li)","authors":"Salman Alsaedi ,&nbsp;Zahra Nourbakhsh ,&nbsp;Aminollah Vaez ,&nbsp;Daryoosh Vashaee","doi":"10.1016/j.mtelec.2024.100113","DOIUrl":"10.1016/j.mtelec.2024.100113","url":null,"abstract":"<div><p>This study conducts a comprehensive first-principles analysis of the structural, mechanical, phonon dispersion, and electronic properties of XMg₂Hg, XMgHg₂, and X₂MgHg (X = Sc and Li) compounds. Using energy-volume curves, cohesive and formation energy, and phonon dispersion analyses, we confirm the stability of these compounds. Our calculations reveal that Li₂MgHg and ScMg₂Hg are more stable in the cubic structure with space group <span><math><mrow><mi>F</mi><mover><mn>4</mn><mo>¯</mo></mover><mn>3</mn><mi>m</mi></mrow></math></span> (216), whereas other compounds are stable in the <span><math><mrow><mtext>Fm</mtext><mover><mn>3</mn><mo>¯</mo></mover><mi>m</mi></mrow></math></span> (225) structure. Phonon dispersion calculations indicate dynamical stability for all compounds except Li₂MgHg in the <span><math><mrow><mtext>Fm</mtext><mover><mn>3</mn><mo>¯</mo></mover><mi>m</mi></mrow></math></span> structure and Sc₂MgHg and LiMg₂Hg in the cubic structure with space group <span><math><mrow><mi>F</mi><mover><mn>4</mn><mo>¯</mo></mover><mn>3</mn><mi>m</mi></mrow></math></span> (216). Mechanical stability is confirmed through the calculation of elastic constants, with Sc-based compounds showing higher bulk modulus, shear modulus, and Young's modulus compared to Li-based compounds. Electronic properties, analyzed through density of states and band structure calculations, confirm the metallic nature of these compounds, with significant contributions from Mg atoms at the Fermi energy. The study also identifies distinct electronic features such as flat electron bands and a Dirac point at the Gamma point for ScMgHg₂​. Pressure-dependent studies indicate these materials are normal metals without topological phase transitions.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100113"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000251/pdfft?md5=382ff6ec11578a3cf1e8a0f35286816a&pid=1-s2.0-S2772949424000251-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141991370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermodynamic modeling of Bi2Te3 in the defect energy formalism","authors":"Adetoye H. Adekoya,&nbsp;G. Jeffrey Snyder","doi":"10.1016/j.mtelec.2024.100109","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100109","url":null,"abstract":"<div><p>Bi₂Te₃ is a promising thermoelectric material that is often touted as one of the best-performing low-temperature thermoelectric materials. As a result, it has been widely used commercially, both for clean energy generation and in cooling devices. Like many other thermoelectric materials, defects play a key role in the performance of Bi₂Te₃. As a result, numerous studies have attempted to experimentally and computationally map out the dominant defects in the phase, these include efforts to determine the dominant defect, estimate defect energies, and predict their concentration. The computer coupling of phase diagrams and thermochemistry (CALPHAD) is one of many tools under the auspices of the materials genome initiative (MGI) that enables the rapid design of new functional materials with improved properties. The Defect energy formalism (DEF) with a charged sublattice, an offshoot of the Compound energy formalism (CEF), provides a way to directly include first-principle defect energy calculations into CALPHAD descriptions of solid phases. The introduction of the charge sublattice enables the estimation of the free carrier concentrations in the phase. Here we apply the DEF to the Bi₂Te₃ system, emphasizing the robustness of the DEF in describing meaningful endmembers and the elimination of fitting parameters. Unlike previous assessments using the Wagner–Schottky defect model, we include the description of the charged defects in our assessment. The DEF with a charged sublattice provides a good prediction of the non-stoichiometry of the phase when compared with experimental data and also predicts a thermodynamic defect concentration at low temperature that is physically reasonable.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000214/pdfft?md5=00431a08ddbaf489816d0452b157c7af&pid=1-s2.0-S2772949424000214-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141596413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Piezo-phototronic and pyro-phototronic effects enabled advanced high-performance metal halide perovskite optoelectronics","authors":"Wanli Xie ,&nbsp;Yitong Wang ,&nbsp;Fangpei Li ,&nbsp;Wenbo Peng ,&nbsp;Yongning He","doi":"10.1016/j.mtelec.2024.100110","DOIUrl":"10.1016/j.mtelec.2024.100110","url":null,"abstract":"<div><p>In recent years, metal halide perovskite materials have been successfully adopted in various optoelectronic applications, owing to their remarkable material properties. Notably, the piezo-phototronic effect (a coining effect of piezoelectric, semiconducting and photoexcitation properties) in metal halide perovskite can be expected to further enhance device performances. In this review, we provide a comprehensive overview of metal halide perovskite materials and their recent advancements through the utilization of the piezo-phototronic effect and the pyro-phototronic effect. Firstly, the molecular structure, growing methods, optical and piezoelectric properties of perovskite are discussed. Subsequently, this review delves into the fundamental principles and practical applications of the piezo-phototronic effect, emphasizing its significance in diverse fields such as. Thirdly, recent studies on the pyro-phototronic effect, spintronics, and light emission are surveyed. Last but not least, challenges that may hinder the development of the piezo-phototronic effect and pyro-phototronic effect in perovskites are summarized. This review emphasizes the advances in the application of the piezo-/pyro-phototronic effect in perovskite-based optoelectronic devices. It aims to provide a comprehensive understanding of the piezo-/pyro-phototronic effect as an effective tool to enhance device performances as well as to inspire potential design for high-performance perovskite-based optoelectronic devices in the future.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100110"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000226/pdfft?md5=9f158482c779c4e00ad3636f78add295&pid=1-s2.0-S2772949424000226-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion dynamics in metal halide perovskites for resistive-switching memory and neuromorphic memristors","authors":"Sumin Lee ,&nbsp;Jeonghyeon Son ,&nbsp;Beomjin Jeong","doi":"10.1016/j.mtelec.2024.100114","DOIUrl":"10.1016/j.mtelec.2024.100114","url":null,"abstract":"<div><p>Resistive-switching (RS) memory devices, or memristors, necessitate active materials of which electronic resistance is tunable by an external electric field. Metal halide perovskites (MHP) are representative RS materials wherein the electronic resistance is modulated by migration of intrinsic native or extrinsic impurity mobile ions. Since the first demonstration of MHP-based RS memory nearly a decade ago, MHPs have proven their great potential for energy-efficient nonvolatile memory devices. Dynamic transport of the mobile ions further allows MHPs to exhibit multistate resistance tunability at multiple timescale, which can be harnessed for neuromorphic memristors. Herein, we provide a comprehensive review on progress in RS memory devices with MHPs and their applications for neuromorphic memristors. We discuss how the electronic resistance of the MHPs is modulated by dynamic mobile ions, and focus on the ionic-electronic correlation that involves doping phenomena in MHPs on account of previous theoretical predictions and experimental verifications. Finally, we provide our perspective on major hurdles of MHPs for real-world applications of emerging nonvolatile memory and neuromorphic memristor technology.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100114"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000263/pdfft?md5=af7a40812f1bfd05514d2995b4027ddc&pid=1-s2.0-S2772949424000263-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142087098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}