Materials Today Electronics最新文献_第7页

Van der Waals engineering toward designer spintronic heterostructures 范德华工程设计自旋电子异质结构

Materials Today Electronics Pub Date : 2023-10-17 DOI: 10.1016/j.mtelec.2023.100070

Jizhe Song , Jianing Chen , Mengtao Sun

{"title":"Van der Waals engineering toward designer spintronic heterostructures","authors":"Jizhe Song , Jianing Chen , Mengtao Sun","doi":"10.1016/j.mtelec.2023.100070","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100070","url":null,"abstract":"<div><p>This perspective explores the emerging field of spintronics within the context of two-dimensional van der Waals (vdW) heterostructures. Spintronics has opened exciting possibilities in the realm of two-dimensional (2D) materials. The integration of diverse 2D materials within vdW heterostructures has unveiled a plethora of previously unknown physical phenomena and potential applications related to spin-dependent transport, gate-tunable spin transport, spin filtering effects, and the emergence of ferromagnetism. These advancements have expanded the scope of spintronics beyond traditional bulk materials, offering unique opportunities for efficient spin injection, manipulation, and detection in 2D devices. A deep understanding of how different materials and interfaces are interconnected and how they affect spin properties is essential for improving the effectiveness and control of spin injection and detection. The study of spintronics in vdW heterostructures holds great promise for advancing the frontiers of developing the next generation of spintronic and quantum devices, revolutionizing information technology and nanoelectronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100070"},"PeriodicalIF":0.0,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Liquid crystal photoalignment technique: Basics, developments, and flexible/stretchable device applications 液晶光对准技术:基础、发展和柔性/可拉伸器件应用

Materials Today Electronics Pub Date : 2023-10-16 DOI: 10.1016/j.mtelec.2023.100069

Xiaochuan Xi , Cenqi Yan , Larry Zhongxin Shen , Yinghan Wang , Pei Cheng

引用次数: 0

Review: Exploring spin properties in van der Waals materials with star-of-David pattern 综述:探索具有大卫之星图案的范德华材料的自旋特性

Materials Today Electronics Pub Date : 2023-10-08 DOI: 10.1016/j.mtelec.2023.100068

Liwei Liu , Xuan Song , Xinyu Huang , Hongyan Ji , Ziying Hu , Yuan Huang , Hong-Jun Gao , Yeliang Wang

{"title":"Review: Exploring spin properties in van der Waals materials with star-of-David pattern","authors":"Liwei Liu , Xuan Song , Xinyu Huang , Hongyan Ji , Ziying Hu , Yuan Huang , Hong-Jun Gao , Yeliang Wang","doi":"10.1016/j.mtelec.2023.100068","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100068","url":null,"abstract":"<div><p>The spin properties in van der Waals (vdW) low-dimensional materials have attracted increasing research interest due to their potential application in future nano-spintronic devices. Among the vast members of vdW materials, those with star-of-David (SOD) charge density wave (CDW) patterns are emergent. Here, we give a review of the recent experimental and theoretical progress achieved on this kind of material. First, the features and advantages of exploring spin properties in SOD materials are briefly introduced. Second, the influences of different stacking on the spin properties of SOD systems are discussed, from single-layer to bilayer and then to bulk with different phase combinations by taking advantage of the vdW nature, manifesting various spin phenomena such as the 120° in-plane antiferromagnetism, quantum spin liquid, and the Kondo effect. Then we give some examples of manipulation methods such as doping, strain, and electric field, which can induce the change of spin features. Finally, the current challenges and opportunities at the frontier in this research field are discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100068"},"PeriodicalIF":0.0,"publicationDate":"2023-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Field-free domain wall spin torque nano-oscillators with multimodal real-time modulation and high-quality factor 具有多模态实时调制和高质量因数的无场畴壁自旋力矩纳米振荡器

Materials Today Electronics Pub Date : 2023-10-06 DOI: 10.1016/j.mtelec.2023.100065

Di Wang , Ziwei Wang , Sheng Jiang , Long Liu , Huai Lin , Yifan Zhang , Ruifeng Tang , Xi Luo , Guozhong Xing

{"title":"Field-free domain wall spin torque nano-oscillators with multimodal real-time modulation and high-quality factor","authors":"Di Wang , Ziwei Wang , Sheng Jiang , Long Liu , Huai Lin , Yifan Zhang , Ruifeng Tang , Xi Luo , Guozhong Xing","doi":"10.1016/j.mtelec.2023.100065","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100065","url":null,"abstract":"<div><p>We report on a magnetic domain wall (DW)-based spin torque nano-oscillator (STNO) with real-time multimodal frequency modulation characteristics by engineering the synergistic effect of shape anisotropy, Dzyaloshinskii-Moriya interaction (DMI), and spin-transfer torque. The achieved manageable oscillation and precession of magnetic DW motivate us to implement such attributes into the developed STNO under a low current density of ∼10<sup>7</sup> A/cm<sup>2</sup>, which demonstrates outstanding functionality of multimodal real-time modulation ranging from few GHz and sub-THz with corresponding few tens and >10<sup>4</sup> quality factor (<em>f</em><sub>STNO</sub>/Δ<em>f<!--> </em>) in absence of external magnetic field. Furthermore, the dynamic process of DW motion and magnetic moment precession under different modes has been revealed systematically, and the frequency dependence of various physical parameters including damping constant, uniaxial anisotropy constant, saturation magnetization, exchange stiffness, and DMI constant has also been summarized in detail. Such a DW-based device enriches the STNO family and promises great potential with a broad spectrum of applications in microwave generators and neuromorphic computing.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100065"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Exploring amorphous Ge-As-Se-Te as an active layer candidate in memristive devices 探索非晶锗-砷-硒-碲作为忆阻器件有源层的候选材料

Materials Today Electronics Pub Date : 2023-10-04 DOI: 10.1016/j.mtelec.2023.100064

Wagner Correr, Corinne Chouinard, Sandra Messaddeq, Younes Messaddeq

{"title":"Exploring amorphous Ge-As-Se-Te as an active layer candidate in memristive devices","authors":"Wagner Correr, Corinne Chouinard, Sandra Messaddeq, Younes Messaddeq","doi":"10.1016/j.mtelec.2023.100064","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100064","url":null,"abstract":"<div><p>The implementation of resistive switches in neuromorphic computing and long-term data storage has been delayed by inherent difficulties in their fabrication process, their stability and reproducibility. Low operating voltages, high-density integration and low energy consumption are common challenges in resistive switch design. Here, we report the implementation of a resistive switch based on the amorphous semiconductor Ge<span><math><msub><mrow></mrow><mrow><mn>15</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>25</mn></mrow></msub></math></span>Se<span><math><msub><mrow></mrow><mrow><mn>15</mn></mrow></msub></math></span>Te<span><math><msub><mrow></mrow><mrow><mn>45</mn></mrow></msub></math></span> (GAST) between an inert (W) and an active (Ag) electrode. The device was built using contact photolithography and standard microfabrication techniques, allowing the integration with traditional manufacturing processes. The device is able to switch at voltages as low as 0.15V and 0.6V, when operating in DC and pulsed conditions, respectively. Our results suggest that the adoption of mixed conductors such as GAST may yield devices that operate at low voltages and low energy for neuromorphic applications.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100064"},"PeriodicalIF":0.0,"publicationDate":"2023-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft magnetic materials for power inductors: State of art and future development 功率电感用软磁材料:现状与未来发展

Materials Today Electronics Pub Date : 2023-10-02 DOI: 10.1016/j.mtelec.2023.100066

Jiayi He , Han Yuan , Min Nie , Hai Guo , Hongya Yu , Zhongwu Liu , Rong Sun

{"title":"Soft magnetic materials for power inductors: State of art and future development","authors":"Jiayi He , Han Yuan , Min Nie , Hai Guo , Hongya Yu , Zhongwu Liu , Rong Sun","doi":"10.1016/j.mtelec.2023.100066","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100066","url":null,"abstract":"<div><p>Soft magnetic materials play important roles in both power generation and conversion devices. One of their important applications is power inductor, which acts as an energy transfer station, transferring the direct current energy and blocking the high-frequency alternating current. With the rapid development of circuit topologies and power semiconductors, the power inductors with higher inductance performance, smaller size and higher energy efficiency are required. Based on the world-wide progress, this review gives a comprehensive and critical description on the fundamentals and development of the soft magnetic materials for the power inductors. The relationship between the properties of soft magnetic materials and the inductance performance of device is discussed in detail. The industry status of the power inductors based on both soft ferrites and soft magnetic composites (SMCs) is analyzed. The material selection, fabrication process and microstructure-properties relationships for ferrites and SMC materials are summarized. In particular, this review emphatically compares the difference between the conventional magnetic cores and the multilayer/molding inductors in processing and material selection. The challenges and opportunities of the soft magnetic materials are also highlighted for future development.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100066"},"PeriodicalIF":0.0,"publicationDate":"2023-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Smart nanomaterials to support quantum-sensing electronics 支持量子传感电子学的智能纳米材料

Materials Today Electronics Pub Date : 2023-10-01 DOI: 10.1016/j.mtelec.2023.100067

Vibhas Chugh , Adreeja Basu , Nagendra Kumar Kaushik , Ajeet Kaushik , Yogendra Kumar Mishra , Aviru Kumar Basu

{"title":"Smart nanomaterials to support quantum-sensing electronics","authors":"Vibhas Chugh , Adreeja Basu , Nagendra Kumar Kaushik , Ajeet Kaushik , Yogendra Kumar Mishra , Aviru Kumar Basu","doi":"10.1016/j.mtelec.2023.100067","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100067","url":null,"abstract":"<div><p>Quantum sensing electronic sensing is opening up new cutting-edge possibilities to take advantage of complex quantum mechanical variables to make incredibly sensitive assessments of an array of parameters. Concurrently, there are new prospects for quantum sensing electronics to be used to enhance the processes involved in creating, distributing, and utilizing energy. To use this technology efficiently, it is necessary to handle issues related to sensing material such as stability and operation, reliable monitoring, and precision in sensing and assessment. In this direction, the present is an overview of existing and new quantum sensing materials and methods, along with the related sensing frameworks that have been created to support their advanced translational applications. Regarding next-generation sensing technologies specifically, the realization of a previously unheard degree of sensitivity is made possible using quantum methods and materials. More specifically, this article addresses how quantum sensing materials may lead to greater efficiency while highlighting established and developing quantum sensing methods, materials, and sensing platforms. The discussion of potential chances to implement quantum technologies follows a summary of the remaining obstacles and difficulties for quantum sensor deployment.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100067"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Formulation of functional materials for inkjet printing: A pathway towards fully 3D printed electronics 喷墨打印功能材料的配方:通往全3D打印电子产品的途径

Materials Today Electronics Pub Date : 2023-09-14 DOI: 10.1016/j.mtelec.2023.100058

Anil Bastola , Yinfeng He , Jisun Im, Geoffrey Rivers, Feiran Wang, Robyn Worsley, Jonathan S. Austin, Oliver Nelson-Dummett, Ricky D. Wildman, Richard Hague, Christopher J. Tuck, Lyudmila Turyanska

{"title":"Formulation of functional materials for inkjet printing: A pathway towards fully 3D printed electronics","authors":"Anil Bastola , Yinfeng He , Jisun Im, Geoffrey Rivers, Feiran Wang, Robyn Worsley, Jonathan S. Austin, Oliver Nelson-Dummett, Ricky D. Wildman, Richard Hague, Christopher J. Tuck, Lyudmila Turyanska","doi":"10.1016/j.mtelec.2023.100058","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100058","url":null,"abstract":"<div><p>Inkjet printing offers a facile route for manufacturing the next generation of electronic devices, by combining the design freedom of additive manufacturing technologies with tuneable properties of functional materials and opportunities for their integration into heterostructures. However, to fully realise this potential, the library of functional materials available for additive manufacturing technologies needs to be expanded. In this review, we summarise current developments in ink formulation strategies, approaches for tailoring the functional properties of inks, and multi-material processing. Material – process – property relationships are reviewed for emerging functional materials, such as polymers, nanomaterials, and composites, with examples of current state-of-the-art devices. The flexibility of combining inkjet deposition with other existing technologies and a variety of substrates is also discussed reviewing current trends in electronics and optoelectronics, including wearable electronics, sensing, and energy applications. The review offers a comprehensive and systematic overview of ink formulations for inkjet deposition of electronic devices, summarising the challenges and perspectives in the advancement of 3D and multi-functional electronic devices and smart electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100058"},"PeriodicalIF":0.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Valence band electronic structure of the van der Waals antiferromagnet FePS3 范德华反铁磁体FePS3的价带电子结构

Materials Today Electronics Pub Date : 2023-09-11 DOI: 10.1016/j.mtelec.2023.100061

Jonah Elias Nitschke , Dorye L. Esteras , Michael Gutnikov , Karl Schiller , Samuel Mañas-Valero , Eugenio Coronado , Matija Stupar , Giovanni Zamborlini , Stefano Ponzoni , José J. Baldoví , Mirko Cinchetti

{"title":"Valence band electronic structure of the van der Waals antiferromagnet FePS3","authors":"Jonah Elias Nitschke , Dorye L. Esteras , Michael Gutnikov , Karl Schiller , Samuel Mañas-Valero , Eugenio Coronado , Matija Stupar , Giovanni Zamborlini , Stefano Ponzoni , José J. Baldoví , Mirko Cinchetti","doi":"10.1016/j.mtelec.2023.100061","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100061","url":null,"abstract":"<div><p>Antiferromagnetic van der Waals materials have gained a lot of interest in recent years. They can be exfoliated down to the two-dimensional (2D) limit while potentially preserving intriguing properties of antiferromagnets, such as insensitivity to external magnetic fields and ultrafast spin dynamics in the THz range. The investigation of the electronic band structure of these materials is crucial to understand their behavior and thus to identify paths for future applications. Here, we investigate the valence band structure of one of the most studied 2D antiferromagnets –iron phosphorus trisulfide (FePS<sub>3</sub>)– using angle-resolved photoemission spectroscopy (ARPES) and compare our results with first-principles calculations based on Hubbard-corrected density functional theory (DFT+<em>U</em>). This allows us to identify the bands originating respectively from the Fe <em>3d</em>, the S <em>3p,</em> and the P <em>3p</em> orbitals and to describe their dispersion throughout the whole Brillouin zone. Our results represent an important step towards an accurate theoretical description of the electronic properties of transition metal phosphorus trisulfides, which is a pre-requisite for understanding the behavior of antiferromagnetic materials at the 2D limit.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100061"},"PeriodicalIF":0.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Recent progress in strong spin-orbit coupling van der Waals materials and their heterostructures for spintronic applications 强自旋轨道耦合范德华材料及其异质结构在自旋电子中的应用研究进展

Materials Today Electronics Pub Date : 2023-09-11 DOI: 10.1016/j.mtelec.2023.100060

Shuyuan Shi , Xinran Wang , Yaru Zhao, Weisheng Zhao

{"title":"Recent progress in strong spin-orbit coupling van der Waals materials and their heterostructures for spintronic applications","authors":"Shuyuan Shi , Xinran Wang , Yaru Zhao, Weisheng Zhao","doi":"10.1016/j.mtelec.2023.100060","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100060","url":null,"abstract":"<div><p>The growing need for miniaturization in semiconductor devices has led to an increasing interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically thin and smooth layers, excellent mechanical properties and board application prospects for developing future high-performance devices. This review provides a comprehensive discussion of recent progress of vdW materials and their heterostructures widely studied in spintronics. Firstly, the background of emerging vdW materials in spintronic research is presented. Next, the research progress of the vdW materials with strong spin-orbit coupling (SOC) is discussed, including topological insulators, transition-metal dichalcogenides, vdW ferromagnetic materials, and vdW antiferromagnetic materials. For each material type, the spin-related phenomena, recent development of device applications and material growth methods are discussed in detail. Finally, the review concludes by discussing the future challenges and research prospects of emerging large-SOC vdW materials and their heterostructures, with the goal of inspiring deeper investigations and advancing spintronic device innovations.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"6 ","pages":"Article 100060"},"PeriodicalIF":0.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49906717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1