Materials Today Electronics最新文献

{"title":"Formulation of functional materials for inkjet printing: A pathway towards fully 3D printed electronics","authors":"Anil Bastola ,&nbsp;Yinfeng He ,&nbsp;Jisun Im,&nbsp;Geoffrey Rivers,&nbsp;Feiran Wang,&nbsp;Robyn Worsley,&nbsp;Jonathan S. Austin,&nbsp;Oliver Nelson-Dummett,&nbsp;Ricky D. Wildman,&nbsp;Richard Hague,&nbsp;Christopher J. Tuck,&nbsp;Lyudmila Turyanska","doi":"10.1016/j.mtelec.2023.100058","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100058","url":null,"abstract":"<div><p>Inkjet printing offers a facile route for manufacturing the next generation of electronic devices, by combining the design freedom of additive manufacturing technologies with tuneable properties of functional materials and opportunities for their integration into heterostructures. However, to fully realise this potential, the library of functional materials available for additive manufacturing technologies needs to be expanded. In this review, we summarise current developments in ink formulation strategies, approaches for tailoring the functional properties of inks, and multi-material processing. Material – process – property relationships are reviewed for emerging functional materials, such as polymers, nanomaterials, and composites, with examples of current state-of-the-art devices. The flexibility of combining inkjet deposition with other existing technologies and a variety of substrates is also discussed reviewing current trends in electronics and optoelectronics, including wearable electronics, sensing, and energy applications. The review offers a comprehensive and systematic overview of ink formulations for inkjet deposition of electronic devices, summarising the challenges and perspectives in the advancement of 3D and multi-functional electronic devices and smart electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Valence band electronic structure of the van der Waals antiferromagnet FePS3","authors":"Jonah Elias Nitschke ,&nbsp;Dorye L. Esteras ,&nbsp;Michael Gutnikov ,&nbsp;Karl Schiller ,&nbsp;Samuel Mañas-Valero ,&nbsp;Eugenio Coronado ,&nbsp;Matija Stupar ,&nbsp;Giovanni Zamborlini ,&nbsp;Stefano Ponzoni ,&nbsp;José J. Baldoví ,&nbsp;Mirko Cinchetti","doi":"10.1016/j.mtelec.2023.100061","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100061","url":null,"abstract":"<div><p>Antiferromagnetic van der Waals materials have gained a lot of interest in recent years. They can be exfoliated down to the two-dimensional (2D) limit while potentially preserving intriguing properties of antiferromagnets, such as insensitivity to external magnetic fields and ultrafast spin dynamics in the THz range. The investigation of the electronic band structure of these materials is crucial to understand their behavior and thus to identify paths for future applications. Here, we investigate the valence band structure of one of the most studied 2D antiferromagnets –iron phosphorus trisulfide (FePS₃)– using angle-resolved photoemission spectroscopy (ARPES) and compare our results with first-principles calculations based on Hubbard-corrected density functional theory (DFT+<em>U</em>). This allows us to identify the bands originating respectively from the Fe <em>3d</em>, the S <em>3p,</em> and the P <em>3p</em> orbitals and to describe their dispersion throughout the whole Brillouin zone. Our results represent an important step towards an accurate theoretical description of the electronic properties of transition metal phosphorus trisulfides, which is a pre-requisite for understanding the behavior of antiferromagnetic materials at the 2D limit.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in strong spin-orbit coupling van der Waals materials and their heterostructures for spintronic applications","authors":"Shuyuan Shi ,&nbsp;Xinran Wang ,&nbsp;Yaru Zhao,&nbsp;Weisheng Zhao","doi":"10.1016/j.mtelec.2023.100060","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100060","url":null,"abstract":"<div><p>The growing need for miniaturization in semiconductor devices has led to an increasing interest in layered van der Waals (vdW) materials, which offer intriguing physics, atomically thin and smooth layers, excellent mechanical properties and board application prospects for developing future high-performance devices. This review provides a comprehensive discussion of recent progress of vdW materials and their heterostructures widely studied in spintronics. Firstly, the background of emerging vdW materials in spintronic research is presented. Next, the research progress of the vdW materials with strong spin-orbit coupling (SOC) is discussed, including topological insulators, transition-metal dichalcogenides, vdW ferromagnetic materials, and vdW antiferromagnetic materials. For each material type, the spin-related phenomena, recent development of device applications and material growth methods are discussed in detail. Finally, the review concludes by discussing the future challenges and research prospects of emerging large-SOC vdW materials and their heterostructures, with the goal of inspiring deeper investigations and advancing spintronic device innovations.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49906717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A candidate exchange-biased vdW heterostructure based on Cr2NO2 and Cr2CF2 MXenes","authors":"R. Ponce-Perez ,&nbsp;J. Guerrero-Sanchez ,&nbsp;S.J. Gutierrez-Ojeda ,&nbsp;H.N. Fernandez-Escamilla ,&nbsp;D.M. Hoat ,&nbsp;Ma.G. Moreno-Armenta","doi":"10.1016/j.mtelec.2023.100059","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100059","url":null,"abstract":"<div><p>We investigated the van der Waals heterostructure Cr₂NO₂/Cr₂CF₂ by spin-polarized first-principles calculations. The aim is to create two-dimensional ferromagnetic/antiferromagnetic heterostructures where the exchange bias effect can occur. Cr₂NO₂ MXene is a half-metal ferromagnetic material, while Cr₂CF₂ MXene is an antiferromagnetic semiconductor. The lattice mismatch of both MXenes is ∼4%, good enough to construct the heterostructure. Three different stackings were considered in the heterostructure: H3, T4, and Top. Also, three different cell parameters are considered: larger lattice constant a(Cr₂CF₂), shorter lattice constant a(Cr₂NO₂), and both relaxed. In all cases, T4 staking is the most favorable interaction configuration. Non-covalent interactions show that van der Waals forces dominate in the heterostructure. Also, the average electrostatic potential along the z-axis explains the stability in the T4 stacking. Antiferromagnetic coupling is the most stable when fixing a(Cr₂CF₂) as the heterostructure lattice parameter, while for the short lattice constant, a(Cr₂NO₂), the magnetic coupling becomes Ferromagnetic. Band diagrams evidence that both MXenes preserve their electronic properties after the interaction, so the antiferromagnetic alignment is intrinsic in the heterostructure for the larger lattice constant. Our theoretical findings open the door to consider the versatile MXenes as promising candidates for the new generation of information storage nanodevices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49890842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Giant spontaneous valley polarization in two-dimensional ferromagnetic heterostructures","authors":"Xian Wang,&nbsp;Jing-Yang You","doi":"10.1016/j.mtelec.2023.100051","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100051","url":null,"abstract":"<div><p>Screening two-dimensional (2D) materials with inherent out-of-plane magnetization is the key to spontaneous valley polarization. Based on first-principles calculations, the thermodynamic stability, magnetic orders and electronic band structures of 2D ScX₂ (X = Cl, Br and I) monolayers and their van der Waals junctions are studied to identify potential valley materials, while their monolayers and homo-structural bilayers exhibit intrinsic in-plane magnetization. Particularly, ScI₂ is found to have a strongest valley polarization effect when its magnetization direction is shifted to the <em>z</em> direction. A strategy is proposed to achieve out-of-plane magnetization by creating hetero-structures with monolayer MSe₂ (M=Zr, Hf and Sn). All these constructed heterostructures display out-of-plane magnetization with enhanced valley splitting. The predicted strongest valley splitting reaches about 121 meV in the heterostructure ScI₂/ZrSe₂, which is much larger than that in the pristine ScI₂ monolayer, demonstrating enhanced valley polarization that results from both the compressed ScI₂ lattice and the interlayer interaction with MSe₂. It is noted that the hybridization of <em>p_x</em> and <em>p_y</em> orbitals of I atoms is increased in heterostructures and is responsible for magnetization variation. Our study not only extends the family of 2D spontaneous valley polarization, but also provides in-depth insights for the fundamental investigations of 2D valleytronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Perovskite white light emitting diodes: A review","authors":"Praveen Chenna,&nbsp;Suman Gandi,&nbsp;Sujith Pookatt,&nbsp;Saidi Reddy Parne","doi":"10.1016/j.mtelec.2023.100057","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100057","url":null,"abstract":"<div><p>Recently, there has been a great deal of interest in the potential of perovskite materials for white light emitting diodes (WLEDs). This is due to the remarkable optical properties of these materials, which make them ideal for the application of WLEDs. In this review article, we discuss the recent progress made in the development of WLEDs based on perovskite materials and their potential for use in future applications. The first generation of WLEDs based on perovskite materials was developed in the early 2000s. These LEDs were based on a single layer of organic-inorganic perovskite material, which was used to generate a single emission peak in the visible spectrum. This single peak emission was then combined with a phosphor coating in order to generate white light. Since then, several improvements have been made to the design and structure of WLEDs, resulting in higher efficiency and increased light output. In the past few years, there have been several advances in the design of WLEDs based on perovskite materials. For example, the use of multi-layer perovskites and the addition of quantum dots have enabled the generation of broader emission spectra, resulting in improved color rendition and higher luminous efficacy. In addition, the use of nanostructured perovskites has enabled the generation of LEDs with higher efficiencies and improved thermal stability. Overall, perovskite materials have shown great potential for use in WLEDs. These materials are relatively easy to manufacture, and their optical properties can be tailored to generate a wide range of colors and emission spectra. Additionally, their low cost and high efficiency make them attractive for use in a wide range of applications. In conclusion, perovskite materials are a promising material for the development of WLED technology. The recent advances in the design and fabrication of these LEDs have enabled them to achieve high efficiencies and improved color rendition. As such, they are an attractive option for applications such as automotive lighting and lighting for homes and businesses.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress of bio-based smart wearable sensors for healthcare applications","authors":"Seyedeh Nooshin Banitaba ,&nbsp;Sanaz Khademolqorani ,&nbsp;Vijaykumar V. Jadhav ,&nbsp;Elham Chamanehpour ,&nbsp;Yogendra Kumar Mishra ,&nbsp;Ebrahim Mostafavi ,&nbsp;Ajeet Kaushik","doi":"10.1016/j.mtelec.2023.100055","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100055","url":null,"abstract":"<div><p>As personal portable devices, wearable sensors supply a leading-edge pathway to diagnose various diseases through actuating biological, physical, and chemical sensing capabilities. This could be commonly carried out via recording continuous and real-time of the patient's physiological statuses, as well as pathophysiological information. Although wearable sensor technology is in the infancy stage, tremendous attempts have been devoted to approaching flexible polymeric sensors. Among various polymer candidates applicable for synthesizing flexible and wearable sensors, the bio-based ones have piqued more interest due to their biocompatibility, biodegradability, eco-friendly features, and cost-effectiveness. Additionally, several fabrication techniques have been professed to architect efficient frameworks, such as films, hydrogels, aerogels, ferrogels, 3D layers, electrospun mats, and textiles. In this review, different mechanisms declared to engineer wearable sensors are overviewed. Then, regarding the advantages observed for bio-based polymers, the focused studies on the fabrication of natural-based wearable sensors are described. Notably, cellulose, chitosan, silk, gelatin, and alginate's role in sensing functionality is highlighted. Accordingly, this review has opened a new window to ahead opportunities for wearable sensors based on natural polymers. It is hoped that the new generation of sensors will be launched by combining emerging achievements obtained from employing sustainable and green elements and miniaturized sensor structures.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49870974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlated Topological Electronic States and Surface Magnetic Orderings in Layered MnBi2Te4","authors":"Qi Bian ,&nbsp;Zhibin Shao ,&nbsp;Rui Song ,&nbsp;Yuan Cao ,&nbsp;Yuefei Hou ,&nbsp;Shaojian Li ,&nbsp;Runqing Zhai ,&nbsp;Xin Li ,&nbsp;Fawei Zheng ,&nbsp;Wenliang Zhu ,&nbsp;Yunbo Ou ,&nbsp;Ping Zhang ,&nbsp;Minghu Pan","doi":"10.1016/j.mtelec.2023.100050","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100050","url":null,"abstract":"<div><p>Magnetic van der Waals (vdW) layered materials has inspired enormous interest recently by utilizing the spin degree of freedom for applications in next-generation 2D spintronic devices. Among these materials, MnBi₂Te₄ provides topological bands and the alternating ferromagnetic / antiferromagnetic ordering simultaneously, thus serves as an ideal system promising for 2D spintronics. However, many controversies and discrepancies between theoretical predictions and experimental observations remain unclarified, mainly due to unclarified correlations between electronic bands and surface magnetic ordering. Here, we performed intensive studies of low temperature scanning tunneling microscopy/spectroscopy (STM/S) on high-quality single crystal of MnBi₂Te₄, rationalized with density functional theory (DFT) calculations. Topological surface states (TSSs) and the dispersions are clearly observed by quasiparticle interference (QPI) imaging. The asymmetric QPI patterns at the energies near Dirac point, strongly suggest that the magnetization of the Mn layer in the topmost septuple-layer can be canted into the in-plane direction, which is responsible for the observations of gapless TSSs. Furthermore, various bulk bandgaps observed at the temperatures below and above the Nèel temperature or at the edge of surface terraces, implies a variety of band structures correlated with rich magnetic orders in the surface Mn layer. Our results provide an in-depth understanding of correlations between topological electronic structures and magnetic ordering of surface layer in magnetic topological insulator MnBi₂Te₄, as well as spin-dependent transport properties in spintronic devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Nb-X ionic bonding on the superconductivity of the two-dimensional Nb2SXC (X=O, S, Se, F, Cl, and Br)","authors":"Yiming Zhang,&nbsp;Meiling Xu,&nbsp;Qingxin Zeng,&nbsp;Jian Hao,&nbsp;Yinwei Li","doi":"10.1016/j.mtelec.2023.100053","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100053","url":null,"abstract":"<div><p>The 2D Janus structure, an important derivative of 2D materials, exhibits distinct properties and significant potential in nanodevices. In this study, we focused on the recently synthesized 2D transition metal carbo-chalcogenide Nb₂S₂C [Adv. Mater. 34, 2200574 (2022)]. Through first-principles calculations, we designed five stable 2D Janus Nb₂SXC (X=O, Se, F, Cl, and Br) structures by substituting the top-layer sulfur atoms with X atoms. Both the intrinsic 2D Nb₂S₂C and the five 2D Janus Nb₂SXC structures display promising superconductivity, with an estimated <em>T</em>_c ranging from 1.35 to 12.66 K. The superconductivity is primarily attributed to the strong coupling between the vibration modes of the transverse acoustic branch and the electrons of Nb atoms. Further analysis reveals the significant role of electronegativity in the superconductivity of X elements. For X elements within the same main group, a larger electronegativity corresponds to stronger ionic Nb-X bonds, resulting in further softening of the transverse acoustic mode and enhanced superconductivity. These findings emphasize the crucial contribution of ionic Nb-X bonding in determining the <em>T</em>_c of the 2D Janus Nb₂SXC system, thus expanding the design possibilities for this wide range of superconducting materials.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance","authors":"Raquel Rodriguez-Lamas ,&nbsp;Dolors Pla ,&nbsp;Caroline Pirovano ,&nbsp;Odette Chaix-Pluchery ,&nbsp;Carlos Moncasi ,&nbsp;Michel Boudard ,&nbsp;Rose-Noëlle Vannier ,&nbsp;Carmen Jiménez ,&nbsp;Mónica Burriel","doi":"10.1016/j.mtelec.2023.100054","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100054","url":null,"abstract":"<div><p>LaMnO_3+δ (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn⁺³/Mn⁺⁴ equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49871440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}