Materials Today Electronics最新文献

{"title":"Advanced refractive index sensing through ultra-short pulse compression in hollow core photonic crystal fiber","authors":"Sheikh Montasir Mahbub,&nbsp;Abdullah Al Mahmud Nafiz,&nbsp;Rakibul Hasan Sagor","doi":"10.1016/j.mtelec.2025.100137","DOIUrl":"10.1016/j.mtelec.2025.100137","url":null,"abstract":"<div><div>This manuscript investigates the propagation of ultra-short pulses through hollow-core photonic crystal fibers (HC-PCF) and explores their application as high-sensitivity refractive index sensors. The unique guiding properties of HC-PCFs, combined with the ability to confine light within the hollow core, enable enhanced light-matter interactions. When exposed to intense light, these interactions can demonstrate nonlinear optical phenomena, such as pulse compression, which has been utilized here as a tool for detecting changes in refractive index. The HC-PCF has been designed to allow testing materials with refractive indices ranging from 1.4 to 1.45 to be placed in the core, where ultra-short pulses centered at 1550 nm with a duration of 1 picosecond and an input power of 1 KW, are sent from one end to leverage the nonlinear optical properties. By leveraging these nonlinear phenomena, it has been demonstrated that HC-PCFs exhibit unique attributes when the testing materials inside the core have varying refractive indices. Employing this novel technique, unique compression sensitivity and significant power upsurges have been achieved for the materials under test (MUT) with different refractive indices. Unlike the refractive index sensing methods in practice, this novel technique works based on lesser detection parameters and offers improved sensitivity and selectivity. The proposed method has achieved a minimum sensitivity of 11.6 %, which means the pulse is compressed by a factor of nine, and the maximum power surge recorded is 2313.918 W. This innovative approach opens new avenues for developing advanced sensing systems using HC-PCFs in fields such as environmental monitoring, bio-sensing, and chemical detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100137"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Overview of emerging electronics technologies for artificial intelligence: A review","authors":"Peng Gao ,&nbsp;Muhammad Adnan","doi":"10.1016/j.mtelec.2025.100136","DOIUrl":"10.1016/j.mtelec.2025.100136","url":null,"abstract":"<div><div>This paper shows the short- and long-term electronics technologies emerging as the enablers of next-generation AI systems and focuses on rapidly developing technologies with promise toward enabling the new AI revolution, such as neuromorphic, quantum computing and edge AI processors. These technologies are key to improving the computational power, energy efficiency, and scalability required in AI solutions across healthcare, autonomous systems, and better endeavours. Neuromorphic computing works similarly to the brain's neural configuration to build a more energy-efficient AI system by simulating biological functionality, while quantum computing is ubiquitous as the next stage of problem-solving systems in AI and exponentially increases computational speed and functionality. Finally, Edge AI processors play an important role in real-time AI decision-making, especially in environments with limited power and space, as they allow data to be processed at the original point of generation. Of course, although these technologies demonstrate great potential, there are still obstacles to overcome for subtle hardware-software integration, architecture scalability and high energy consumption. This study highlights sustainable hardware design as an essential solution to these challenges, discussing low-power chips, AI accelerators and energy-efficient designs that allow devices to run at scale without performance liabilities. The paper also highlights quantum and neuromorphic computing—which mimics the structure and function of biological brains—as an important focus for overcoming limitations regarding scalability, allowing for novel architectures equipped to deal with the extremely large amounts of data required for future, more advanced AI models. We also discuss how these progressions can facilitate the creation of effective and scalable AI systems that support AI in addressing global challenges like environmental deterioration and resource limitations. Lastly, the paper highlights the importance of ongoing research and innovation in such areas to promote the evolution of AI systems that are resilient, scalable and energy-efficient in a way that ensures the long-term sustainability of AI and its implementation in various domains.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100136"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Roadmap on metal-halide perovskite semiconductors and devices","authors":"Ao Liu ,&nbsp;Jun Xi ,&nbsp;Hanlin Cen ,&nbsp;Jinfei Dai ,&nbsp;Yi Yang ,&nbsp;Cheng Liu ,&nbsp;Shuai Guo ,&nbsp;Xiaofang Li ,&nbsp;Xiaotian Guo ,&nbsp;Feng Yang ,&nbsp;Meng Li ,&nbsp;Haoxuan Liu ,&nbsp;Fei Zhang ,&nbsp;Huagui Lai ,&nbsp;Fan Fu ,&nbsp;Shuaifeng Hu ,&nbsp;Junke Wang ,&nbsp;Seongrok Seo ,&nbsp;Henry J. Snaith ,&nbsp;Jinghui Li ,&nbsp;Yong-Young Noh","doi":"10.1016/j.mtelec.2025.100138","DOIUrl":"10.1016/j.mtelec.2025.100138","url":null,"abstract":"<div><div>Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100138"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143211787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and analysis of junctionless dielectric modulated double-gate GaNFET biosensor for label-free DNA detection","authors":"Md. Zahid Hasan ,&nbsp;Rezaur Raihan ,&nbsp;Nur Kutubul Alam ,&nbsp;Md. Rejvi Kaysir ,&nbsp;Md. Shaharuf Islam ,&nbsp;M. A. Parvez Mahmud","doi":"10.1016/j.mtelec.2025.100144","DOIUrl":"10.1016/j.mtelec.2025.100144","url":null,"abstract":"<div><div>The investigation of DNA hybridization spans various scientific domains, offering insights from genomics to diagnostics and pharmacology. Traditional methods involve labeling DNA, but innovative FET devices use label-free techniques. Nanoscale biosensors provide superior speed, sensitivity, cost-effectiveness, and versatility compared to conventional methods. Overcoming challenges like the Short Channel Effect (SCE) is crucial for synthesizing biosensors meeting these criteria. Previous research focused on junctionless double-gate transistors for mitigating SCE and GaN as channel materials for high-speed, low-power applications. However, dealing with negatively charged biomolecules like DNA poses challenges due to conflicting dielectric constant and interface charge effects. To address these challenges, the proposed nanoscale biosensor employs a junctionless dielectric modulated double-gate GaN field-effect transistor (JL-DM-DG GaNFET). This device effectively synergizes conflicting dielectric constant and charge effects, with GaN as the channel material. Simulation results show the n-type JL-DM-DG GaNFET exhibits significant sensitivity to negatively charged DNA, with a greater change in threshold voltage (&gt; 539 mV for <em>k</em> = 1 to <em>k</em> = 15) compared to the p-type (-101 mV for <em>k</em> = 1 to <em>k</em> = 4, and 74.59 mV for <em>k</em> = 4 to <em>k</em> = 15). Specifically, for charge density the n-type device displays a higher sensitivity 1.05 vs. 0.509 for the p-type and for dielectric constant <em>k</em> = 16 (sensitivity 0.8 for n-type vs. 0.4 for p-type). Additionally, the device shows low subthreshold slope (∼ 60 mV/decay) and higher I_on/I_off ratio, suggesting faster switching and lower power consumption. In summary, the proposed n-type JL-DM-DG GaNFET holds considerable potential for efficient and reliable DNA detection.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100144"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in organic semiconductor crystalline microwire field-effect transistors","authors":"Dao Duy Thanh ,&nbsp;Chia-Hsun Nieh ,&nbsp;Ting-Yu Wang ,&nbsp;Qun-Gao Chen ,&nbsp;Wen-Ya Lee ,&nbsp;Chu-Chen Chueh","doi":"10.1016/j.mtelec.2024.100134","DOIUrl":"10.1016/j.mtelec.2024.100134","url":null,"abstract":"<div><div>Organic crystal microwires (OCMs) have attracted much attention in the last decade due to their great potential for fabricating high-performance organic field-effect transistors (OFETs) and related applications including circuits, displays, sensors, as well as flexible and wearable devices. OCMs offer a number of advantages, such as long-range ordering, the absence of grain boundaries, low defect density, and flexibility. However, the preparation of tiny-sized, highly crystalline and homogeneous ribbons faces considerable challenges. Therefore, efforts have been made to develop new processing methods to produce high-quality OCMs. This perspective describes recent simple and widely used techniques for the preparation of OCMs, including both dry and wet processes. The advantages and limitations of these different techniques are discussed. In addition, we summarize recent advances in the performance of OCMs-based OFETs, comparing the charge-transporting properties of different preparation methods, including OCMs and thin films. Finally, the potential and future prospects of utilizing crystal microwires in perovskite FETs are also discussed.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100134"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Contact engineering for two-dimensional van der Waals semiconductors","authors":"Jiachen Tang,&nbsp;Shuaixing Li,&nbsp;Li Zhan,&nbsp;Songlin Li","doi":"10.1016/j.mtelec.2024.100132","DOIUrl":"10.1016/j.mtelec.2024.100132","url":null,"abstract":"<div><div>Two-dimensional (2D) semiconductors represent the most promising post-silicon channel materials for ultimate electronics. However, the unique atomic thickness renders them incompatible with traditional atomic doping technique through ion implantation and thermal activation, which poses a key challenge for constructing ohmic contacts with 2D semiconductors. In the last decade, constant efforts have been devoted to address this critical challenge. In this article, by casting light on the origins of contact resistance between electrodes and 2D semiconductors, we review various strategies of contact engineering for 2D van der Waals semiconductors and the steady progress achieved in this specific issue, in order to provide guidance for device design and integration of 2D semiconductors for next-generation electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100132"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in the development of metal halide perovskite electronics for sensing applications","authors":"Albert Buertey Buer ,&nbsp;Nana Yaw Asare Boateng ,&nbsp;Benjamin Asafo-Adjei ,&nbsp;Sooncheol Kwon,&nbsp;Jea Woong Jo","doi":"10.1016/j.mtelec.2024.100122","DOIUrl":"10.1016/j.mtelec.2024.100122","url":null,"abstract":"<div><div>Metal–halide perovskites have attracted significant attention recently owing to their exceptional optoelectronic performance. Their unique optical and electronic properties, combined with their ease of fabrication and high sensitivity to varied stimuli, render them promising candidates for next-generation efficient sensors. These materials have demonstrated outstanding sensing performance, with record-breaking sensitivities, rapid response times, and superior selectivity. This review comprehensively evaluates the recent progress in the applications of metal-halide perovskite-based sensors. Furthermore, this study addresses the remaining challenges and future perspectives crucial for the advancement of metal–halide perovskites in sensing technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100122"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142427163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism","authors":"Anirudh Kumar ,&nbsp;Satendra Pal Singh ,&nbsp;Sejoon Lee ,&nbsp;Sanjeev Kumar Sharma","doi":"10.1016/j.mtelec.2024.100125","DOIUrl":"10.1016/j.mtelec.2024.100125","url":null,"abstract":"<div><div>Two terminal resistive switching memories are emerging candidates for the next generation of non-volatile memory in the upcoming era of artificial intelligence and big data generated globally. Much research is currently focused on developing write-once-read-many-times (WORM) memory devices, which offer the advantages of small size, high speed, improved energy consumption, and large data capacity. Nanostructured organic/inorganic heterojunction composites have garnered significant attention due to their excellent scalability and low-cost fabrication. In the present study, the YZO/PMMA hybrid nanocomposite bilayer ReRAM was fabricated on ITO substrates. The I-V characteristics of the fabricated ITO/YZO/PMMA/Al device exhibited the ternary WORM switching behavior (HRS, LRS1, and LRS2 states). It has been observed that three states of “HRS”, “LRS1” and “LRS2” exhibit a distinct current ratio of LRS1/HRS and LRS2/HRS of 10^1.6 and 10^2.4_, respectively, with good data retention (up to 500 h). It was demonstrated that Y-dopant concentration into ZnO significantly transits the switching behavior of ITO/ZnO/PMMA/Al memory from binary to ternary WORM switching characteristics. Ohmic conduction and space charge-limited current (SCLC) were observed in the HRS. In LRS1, the Schottky emission mechanism was observed, while in LRS2, Ohmic conduction was observed. The physical model of the formation of permanent conducting filaments (CFs) consisting of oxygen vacancies in the device's active layer is proposed to explain the RS behavior. These findings reveal the low-cost development of high-density, non-volatile memory devices operated with very low power consumption that can be used to protect data against unauthorized software/hardware and hackers.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100125"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insight into the origins of mobility deterioration in indium phosphide-based epitaxial layer","authors":"Si Li ,&nbsp;Yongkang Jiang ,&nbsp;Hua Wei ,&nbsp;Hanbao Liu ,&nbsp;Xiaoda Ye ,&nbsp;Xingkai Zhao ,&nbsp;Feihong Chen ,&nbsp;Jiayun Deng ,&nbsp;Jie Yang ,&nbsp;Chong Wang ,&nbsp;Tingfang Liu ,&nbsp;Tinglong Liu ,&nbsp;Gang Tang ,&nbsp;Shikun Pu ,&nbsp;Qingju Liu ,&nbsp;Feng Hui ,&nbsp;Feng Qiu","doi":"10.1016/j.mtelec.2024.100121","DOIUrl":"10.1016/j.mtelec.2024.100121","url":null,"abstract":"<div><p>Ultra-high mobility speciality is a critical figure of merit for ultrapure materials and high-speed optoelectronic devices. However, unintentional doping-inducing various scattering frequently deteriorates mobility capacity. Therefore, how to elucidate the origin of mobility deterioration is still an open and technically challenging issue. Here we report that unintentional-doping silicon ion would be propagated into the indium phosphide (InP)’s epitaxial layer via analysis of time-of-flight and dynamic secondary ion mass spectrometry. The unintentional silicon ion in the InP wafer surface is responsible for the subsequent InGaAs epitaxial layer's mobility attenuation. The first-principles calculations and Boltzmann transport theory prove that polar optical phonon scattering (Fröhlich scattering) in non-doping InGaAs is the dominant scattering mechanism at high temperatures over 100 K. In contrast, the low-temperature scattering process is dominated by ionized impurities scattering. The unintentional silicon ion improves the Fröhlich scattering-dominated critical temperature. Our findings provide insight into the mobility degeneration originating from unintentional pollution and underlying scattering mechanisms, which lay a solid foundation for developing high-grade, super-speed, and low-power photoelectronic devices.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100121"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000330/pdfft?md5=4ebd38ea3fa42fd920892c7af97a0674&pid=1-s2.0-S2772949424000330-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142272427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advancements and challenges in highly stable all-inorganic perovskite solar cells","authors":"Sunkyu Kim ,&nbsp;Muhammad Adnan ,&nbsp;Zobia Irshad,&nbsp;Wonjong Lee,&nbsp;Siwon Yun,&nbsp;Hyeji Han,&nbsp;Jongchul Lim","doi":"10.1016/j.mtelec.2024.100127","DOIUrl":"10.1016/j.mtelec.2024.100127","url":null,"abstract":"<div><div>Organic–inorganic perovskite solar cells (PSCs) have attracted significant attention because of their outstanding photoelectric conversion efficiency, simple fabrication process, and long exciton diffusion lengths. In particular, the power conversion efficiency of single-junction PSCs is 26.1%, whereas that of multi-junction silicon/perovskite tandem solar cells reaches an impressive 33.9%, indicating good prospects for the solar cell market. However, traditional organic–inorganic PSCs are highly sensitive to moisture, light, and heat, which negatively affect their stability and thereby commercialization. Nowadays, all-inorganic perovskites are attracting considerable attention for application in solar cells because of their potential to attain high resistance to environmental factors. All-inorganic perovskites have been considered an alternative to organic–inorganic perovskites because of their advantages over organic–inorganic perovskites, such as the capability to stabilize the photoactive phase, long-term thermal stability, and the possibility of tailoring the bandgap structure. Herein, we perform a detailed meta-analysis of materials and approaches used for the preparation of all-inorganic perovskite thin films and discuss recent advancements in key performance parameters such as efficiency, stability, and electrical and optoelectronic properties. Finally, we outline directions for future studies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"10 ","pages":"Article 100127"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}