{"title":"Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si","authors":"Asraful Haque, Suman Kumar Mandal, Antony Jeyaseelan, Sandeep Vura, Pavan Nukala, Srinivasan Raghavan","doi":"10.1016/j.mtelec.2024.100091","DOIUrl":null,"url":null,"abstract":"<div><p>Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr<sub>3</sub>Al<sub>2</sub>O<sub>6</sub> (SAO), at the interface and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO<sub>3</sub> (SVO) as a sacrificial buffer layer. We then exploit the well-known enhancement of liquid diffusivities by monolayer graphene to enhance the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid- graphene-SVO- template by growing ferroelectric BaTiO<sub>3</sub> (BTO) via PLD and Pb(Zr, Ti)O<sub>3</sub> (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000032/pdfft?md5=c2a1c2f28f881120c69c5cb5f4cde82c&pid=1-s2.0-S2772949424000032-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949424000032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr3Al2O6 (SAO), at the interface and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO3 (SVO) as a sacrificial buffer layer. We then exploit the well-known enhancement of liquid diffusivities by monolayer graphene to enhance the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid- graphene-SVO- template by growing ferroelectric BaTiO3 (BTO) via PLD and Pb(Zr, Ti)O3 (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.