Materials Today Electronics最新文献_第5页

Thermal transport in magnetic materials: A review 磁性材料中的热输运：综述

Materials Today Electronics Pub Date : 2025-06-01 Epub Date: 2025-05-07 DOI: 10.1016/j.mtelec.2025.100156

Shuchen Li , Shucheng Guo , Thomas Hoke, Xi Chen

{"title":"Thermal transport in magnetic materials: A review","authors":"Shuchen Li , Shucheng Guo , Thomas Hoke, Xi Chen","doi":"10.1016/j.mtelec.2025.100156","DOIUrl":"10.1016/j.mtelec.2025.100156","url":null,"abstract":"<div><div>Thermal transport in magnetic materials has become a pivotal research area due to its fundamental importance and potential applications in thermal management, spintronics, and energy conversion technologies. Beyond conventional heat carriers such as phonons and electrons, magnetic excitations—including magnons and spinons—play a substantial role in heat transport within these materials. Their transport behaviors are influenced by factors such as dimensionality, defects, magnetic structures, and external stimuli like magnetic and electric fields. Additionally, the coupling of magnetic excitations with phonons or electrons is critical in modulating the thermal properties of magnetic materials. This review provides a comprehensive overview of thermal transport mechanisms in magnetic materials, with a focus on magnetic excitations. Recent advancements reveal intriguing behaviors, including ballistic magnetic thermal transport, size-dependent thermal transport, and the impact of various scattering processes on thermal conductivity. Furthermore, external magnetic and electric fields have been shown to manipulate thermal conductivity by modifying magnetic dispersion, spin configurations, and scattering processes. These findings open a new pathway for controlling heat flow in magnetic systems. This review highlights the important role of thermal transport studies in advancing our understanding of magnetic materials and offers valuable insights into the development of functional thermal devices utilizing these materials.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100156"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143947715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large terahertz nonlinearity in two-dimensional electron gas metasurface 二维电子气体超表面的大太赫兹非线性

Materials Today Electronics Pub Date : 2025-06-01 Epub Date: 2025-05-13 DOI: 10.1016/j.mtelec.2025.100157

Kaixin Yu , Chen Wang , Yongzheng Wen , Yong Tan , Shiqiang Zhao , Renfei Zhang , Jingbo Sun , Ji Zhou

{"title":"Large terahertz nonlinearity in two-dimensional electron gas metasurface","authors":"Kaixin Yu , Chen Wang , Yongzheng Wen , Yong Tan , Shiqiang Zhao , Renfei Zhang , Jingbo Sun , Ji Zhou","doi":"10.1016/j.mtelec.2025.100157","DOIUrl":"10.1016/j.mtelec.2025.100157","url":null,"abstract":"<div><div>Nonlinear responses in the terahertz (THz) frequency range are essential for advancing THz sources and modulators. However, the development of THz nonlinear materials with efficient second- and third-order nonlinear susceptibilities at room temperature remains challenging. Here, we introduce a THz nonlinear metasurface based on gallium nitride two-dimensional electron gas (2DEG), capable of both second harmonic generation (SHG) and third harmonic generation (THG). By leveraging the magneto-electric coupling mechanism built in the metasurface, we induce anharmonic oscillations of electrons to achieve THz SHG with the effective second-order nonlinear susceptibility reaching 14.3 μm V<sup>-1</sup>. Meanwhile, the localized electric field confinements in the same metasurface structure substantially improve the intrinsic third-order nonlinearity of the 2DEG as well, enhancing the THz THG by over two orders of magnitude. By simply scaling the structure of the metasurface, the working frequency of the intense nonlinear responses can be engineered at will. Our results provide a promising route to efficient THz second- and third-order nonlinearities within a single metasurface, which may open new pathways for developing highly integrated, room-temperature THz sources, as well as further advancements in high-speed electronics.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100157"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent advances in stimuli-responsive materials for intelligent electronics 智能电子刺激响应材料的最新进展

Materials Today Electronics Pub Date : 2025-06-01 Epub Date: 2025-04-11 DOI: 10.1016/j.mtelec.2025.100152

Siyao Chen , Hongqiu Wei , Cheng Lin , Hanxing Zhao , Chaoqun Dong , Xue Wan

引用次数: 0

High-performance CuI-based ultraviolet phototransistors 高性能基于gui的紫外光电晶体管

Materials Today Electronics Pub Date : 2025-06-01 Epub Date: 2025-03-28 DOI: 10.1016/j.mtelec.2025.100149

Mingyang Wang , Huihui Zhu , Ao Liu

引用次数: 0

Development of high-speed gallium oxynitride nanowires based ultraviolet photodetectors by chemical vapour deposition technique: a facile approach 化学气相沉积技术制备高速氧化氮化镓纳米线紫外探测器的简易方法

Materials Today Electronics Pub Date : 2025-06-01 Epub Date: 2025-04-30 DOI: 10.1016/j.mtelec.2025.100150

Sanjay Sankaranarayanan , Prabakaran Kandasamy , Niraj Kumar , Kandasamy Muthusamy , Rameshkumar Perumal , Saravanan Gengan

{"title":"Development of high-speed gallium oxynitride nanowires based ultraviolet photodetectors by chemical vapour deposition technique: a facile approach","authors":"Sanjay Sankaranarayanan , Prabakaran Kandasamy , Niraj Kumar , Kandasamy Muthusamy , Rameshkumar Perumal , Saravanan Gengan","doi":"10.1016/j.mtelec.2025.100150","DOIUrl":"10.1016/j.mtelec.2025.100150","url":null,"abstract":"<div><div>Gallium oxynitride nanowires (GaON NWs) based ultraviolet photodetectors (UV PDs) with tunable bandgap and superior response speed is demonstrated by nitridation process in a chemical vapour deposition system. Growth rate and density of the NWs are greatly influenced by the synthesis time. With increase in growth time from 60 to 100 min, nitrogen composition in the samples increased and oxygen composition decreased, resulting in bandgap tunability from 4.63 to 4.21 eV. As an effect of bandgap tunability and dimensionality shrinkage, valence band maximum gets lifted–up due to the hybridization of O<sub>2p</sub> and N<sub>2p</sub> states. The fabricated GaON PDs with an appropriate nitrogen composition demonstrate significant reduction in the dark current and a faster response time of 106 µs. Oxygen vacancies get suppressed by the alteration in valence band maximum, resulting in reduced photoconductive trapping effect and enhanced response speed. When nitrogen is introduced, the probability of photoexcited charge carrier recombination increase, resulting in poor photoresponsivity. Thus, varying the nitrogen composition, bandgap tunability is achieved which suppresses charge carriers trapping in GaON. This methodology provides an alternate approach to develop high-speed ultraviolet photodetectors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100150"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144262542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, surface, electrical and UVC sensing properties of high temperature RF sputtered gallium oxide thin films 高温射频溅射氧化镓薄膜的结构、表面、电学和UVC传感性能

Materials Today Electronics Pub Date : 2025-05-01 Epub Date: 2025-02-03 DOI: 10.1016/j.mtelec.2025.100139

Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran

{"title":"Structural, surface, electrical and UVC sensing properties of high temperature RF sputtered gallium oxide thin films","authors":"Sidhant Sharma , Hilal Nagib , Phuong Y. Le , Martin W. Allen , Anthony S. Holland , Jim G. Partridge , Hiep N. Tran","doi":"10.1016/j.mtelec.2025.100139","DOIUrl":"10.1016/j.mtelec.2025.100139","url":null,"abstract":"<div><div>Gallium oxide thin films have been deposited on a-, c-, r- plane sapphire and amorphous Si<sub>3</sub>N<sub>4</sub> at 800 °C by RF sputtering from a 99.99 % purity Ga<sub>2</sub>O<sub>3</sub> target then characterised structurally, optically and electrically. A fixed process pressure of 3.0 mTorr was employed with O<sub>2</sub>:Ar ratios of 0:1 (0 % O<sub>2</sub>), 1:18 (5 % O<sub>2</sub>), 1:9 (10 % O<sub>2</sub>) and 3:17 (15 % O<sub>2</sub>). X-ray diffractograms attributable to β-Ga<sub>2</sub>O<sub>3</sub> were collected from the films grown on a- and c- plane sapphire. The highest crystallinity was observed in the films grown on c-plane sapphire. Ga<sub>2</sub>O<sub>3</sub> films on r-plane sapphire and Si<sub>3</sub>N<sub>4</sub> produced no diffracted peaks and were deemed to be amorphous or nanocrystalline. Ga 3d X-ray photoelectron spectra showed only Ga-O bonding with no evidence of Ga-Ga bonding, even in the films deposited with only Ar introduced to the chamber. Direct optical bandgaps exceeding 5.0 eV were observed in the films on a- and c- plane sapphire. Valence band spectra showed the valence band maxima (VBM) and Fermi level (FL) were separated by ∼3 eV in the Ga<sub>2</sub>O<sub>3</sub> films on a- and c- plane sapphire whilst films on r-plane sapphire exhibited VBM - FL gaps of ∼2.5 eV, indicative of low shallow impurity/defect doping density, most likely due to oxygen vacancies. Selected films were incorporated into metal-semiconductor-metal UV-C detectors. Solar-blind detection was confirmed and the maximum measured UV-C /dark current ratios (I<sub>UVC</sub>:I<sub>dark</sub>) exceeded 10<sup>3</sup>:1.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100139"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapid fabrication of flexible copper-plated circuit boards on cotton fabrics and conductive threads for textile materials using pencil-drawn technique 利用铅笔绘制技术在棉织物上快速制作柔性镀铜电路板和纺织材料导电线

Materials Today Electronics Pub Date : 2025-05-01 Epub Date: 2025-03-12 DOI: 10.1016/j.mtelec.2025.100141

Vinit Srivastava , Shivam Dubey , Rahul Vaish , Bharat Singh Rajpurohit

{"title":"Rapid fabrication of flexible copper-plated circuit boards on cotton fabrics and conductive threads for textile materials using pencil-drawn technique","authors":"Vinit Srivastava , Shivam Dubey , Rahul Vaish , Bharat Singh Rajpurohit","doi":"10.1016/j.mtelec.2025.100141","DOIUrl":"10.1016/j.mtelec.2025.100141","url":null,"abstract":"<div><div>This study presents an approach for fabricating flexible and stable electroplated circuits directly onto fabric and thread. We achieve this through a simple method. Pencil-drawn patterns on cotton fabric are followed by copper electroplating in a copper sulfate solution. This method eliminates the need for complex pre-treatment and lithography techniques, thus enabling rapid and on-site circuit development. This research investigated the influence of different pencil grades, drawing frequency, and plating time on the overall conductivity and flexibility of the fabric-based circuits. The electroplated copper demonstrated exceptional bending and thermal stability, maintaining consistent conductivity over a wide bending range (-180° to 180°), with minimal linear resistance change after extreme twisting. Furthermore, the fabricated circuits functioned effectively as Light Dependent Resistor (LDR) based Plated Circuit Boards (PCB), demonstrating robustness and practical potential. The fabrication of conductive threads has also been explored by electroplating graphite threads. These threads displayed remarkable flexibility, maintaining consistent conductivity (0.5 Ω/cm) even under tight knots. The copper-plated textile exhibited stable resistance: 0.6 Ω across 22 °C to 55 °C and 0.5 Ω/cm under bending angles from -180° to +180°. It endured 1000 folding cycles, with resistance increasing slightly to 1.3 Ω. Furthermore, this work shows that the flexible PCBs are resistant to folding stress, environmentally friendly, and disposable, which is a significant step toward sustainable electronics. The results of this study hold significant potential applications in textile-based electrical systems, wearable electronics, and sensors.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100141"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene metasurfaces: Advances in lens applications, design strategies, and fabrication techniques 石墨烯超表面：透镜应用、设计策略和制造技术的进展

Materials Today Electronics Pub Date : 2025-05-01 Epub Date: 2025-02-21 DOI: 10.1016/j.mtelec.2025.100140

Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang

{"title":"Graphene metasurfaces: Advances in lens applications, design strategies, and fabrication techniques","authors":"Meisam Esfandiari, Xiaojing Lv, Shaghayegh Chamani, Yang Yang","doi":"10.1016/j.mtelec.2025.100140","DOIUrl":"10.1016/j.mtelec.2025.100140","url":null,"abstract":"<div><div>This review comprehensively examines the recent advancements in graphene-based metasurface lenses, shedding light on their innovative design principles, advanced manufacturing techniques, and superior optical properties. Graphene's exceptional electrical, mechanical, and optical characteristics, combined with the versatile functionality of metamaterials and metasurfaces, have led to the development of highly efficient and dynamic lens systems. These lenses demonstrate remarkable capabilities, including tunable focal lengths, enhanced light modulation, and improved photodetection sensitivity. Such properties render them highly suitable for transformative applications in diverse fields like high-resolution imaging, precision sensing, and next-generation telecommunications. The review provides an in-depth analysis of the state-of-the-art methods used in the fabrication of these lenses, such as chemical vapor deposition, advanced lithography, and nanomanufacturing, to achieve nanoscale precision and functional integration. Moreover, the challenges associated with large-scale production scalability, fabrication techniques' complexity, and graphene's long-term stability under varying environmental conditions are critically examined. In exploring these aspects, the review identifies key directions for future research, emphasizing the need for interdisciplinary collaboration to overcome current limitations. By addressing these challenges and leveraging advancements in material science and nanotechnology, graphene-based metasurface lenses have the potential to revolutionize the future of optical lens systems and photonic technologies.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100140"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric memristors based on double perovskite Bi2FeCoO6 for synaptic performance and human expression recognition storage 基于双钙钛矿Bi2FeCoO6的铁电记忆电阻器用于突触性能和人类表达识别存储

Materials Today Electronics Pub Date : 2025-05-01 Epub Date: 2024-12-12 DOI: 10.1016/j.mtelec.2024.100133

Dong-Ping Yang , Wen-Min Zhong , Jun Li , Xin-Gui Tang , Qi-Jun Sun , Qiu-Xiang Liu , Yan-Ping Jiang

{"title":"Ferroelectric memristors based on double perovskite Bi2FeCoO6 for synaptic performance and human expression recognition storage","authors":"Dong-Ping Yang , Wen-Min Zhong , Jun Li , Xin-Gui Tang , Qi-Jun Sun , Qiu-Xiang Liu , Yan-Ping Jiang","doi":"10.1016/j.mtelec.2024.100133","DOIUrl":"10.1016/j.mtelec.2024.100133","url":null,"abstract":"<div><div>This study reports for the first time the application of double perovskite thin-film devices based on the Bi<sub>2</sub>FeCoO<sub>6</sub> (BFCO) compound in non-volatile ferroelectric memristors. By spin-coating BFCO onto an N-type silicon (N-Si) substrate, a P-N junction was formed, yielding a thin-film device with ferroelectric properties. The device demonstrated a maximum polarization value of 46.09 μC/cm² and a high switching ratio of 293, along with excellent long-term stability (over 7 days) and high repeatability (1000 cycles). Furthermore, we investigated the synaptic characteristics of the device, including short-term plasticity, paired-pulse facilitation, and long-term potentiation/inhibition behaviors. By designing a confusion matrix recognition scenario with a binary neural network, we validated the potential of double perovskite ferroelectric memristors in intelligent learning applications. Additionally, leveraging the synaptic plasticity of the device, we developed a modal storage memory and recognition system for human emotions. This work not only provides new insights into the development of high-performance double perovskite ferroelectric memristors but also lays the foundation for optimizing synaptic performance in intelligent learning applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100133"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultra-compact magnetoelectric sensor for femto-Tesla VLF signal reception 用于飞特斯拉VLF信号接收的超紧凑型磁电传感器

Materials Today Electronics Pub Date : 2025-05-01 Epub Date: 2025-01-09 DOI: 10.1016/j.mtelec.2025.100135

Cunzheng Dong , Changxing Sun , Lei Chen , Yifan He , Yisi Liu , Bin Luo , Nian X. Sun

{"title":"Ultra-compact magnetoelectric sensor for femto-Tesla VLF signal reception","authors":"Cunzheng Dong , Changxing Sun , Lei Chen , Yifan He , Yisi Liu , Bin Luo , Nian X. Sun","doi":"10.1016/j.mtelec.2025.100135","DOIUrl":"10.1016/j.mtelec.2025.100135","url":null,"abstract":"<div><div>Very low-frequency (VLF) electromagnetic waves can penetrate dense, conductive media such as earth and saltwater, with minimal attenuation, enabling long-distance signal transmission via ionospheric reflection. These characteristics make VLF ideal for applications in submarine navigation, subterranean mapping, underground communication, and ionospheric remote sensing. Conventional VLF signal reception has relied on magnetic loop antennas due to their low noise performance; however, their large size and reduced sensitivity due to low quality factors (Q) limit their use in portable and compact applications, particularly in underwater and underground environments. To address these challenges, we propose an ultra-compact room-temperature extremely sensitive femto-tesla magnetic sensor based on a strain-mediated high-Q Metglas/Quartz magnetoelectric (ME) resonator operating at its electromechanical resonance (EMR) at 24.55 kHz for VLF signal reception. The Metglas/Quartz ME sensor demonstrates sensitivity and magnetic noise performance enhancement by an order of magnitude compared to conventional Metglas/PZT ME sensors, achieving an ultra-low equivalent magnetic noise level of 5 fT/Hz<sup>1/2</sup>, owing to high magnetic permeability and magnetostriction of Metglas and the high quality factor of Quartz at EMR. Moreover, the Metglas/Quartz ME VLF receiver exhibits overwhelming near-field and far-field VLF signal reception capability, realizing a successful reception of a VLF signal ∼400 km away from the NAA VLF Transmitter Cutler, with a 55 dB signal-to-noise (SNR) ratio. The demonstrated ultra-compact high-Q Metglas/Quartz ME sensor capable of femto-tesla VLF signal reception shows significant improvements in magnetic sensing capability, size, power consumption, and cost compared to traditional magnetic loop antennas, making it a promising solution for portable VLF signal reception in challenging environments.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"11 ","pages":"Article 100135"},"PeriodicalIF":0.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143103654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0