Materials Today Electronics最新文献

{"title":"Dynamical self-rectifying memristors based on halide perovskite nanocrystals","authors":"Ziyu He,&nbsp;Yuncheng Mu,&nbsp;Shu Zhou","doi":"10.1016/j.mtelec.2024.100098","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100098","url":null,"abstract":"<div><p>The integration of rectifying effects with resistance switching in a self-rectifying memristor offers the opportunity to suppress the sneak current in high-density crossbar arrays for energy-efficient neuromorphic computing. Here, we report a new type of two-terminal self-rectifying memristor that gets rid of asymmetric complex structures by using CsPbBr₃ perovskite nanocrystals (NCs). The simple metal-insulator-metal (Au/CsPbBr₃ NCs/Au) configuration that eases integration exhibits multiple resistance states that can be precisely controlled by the stimulus properties and dynamical rectifying characteristics dependent on both the bias voltage and bias time. We have extended an earlier proposed theory that predicts electric-potential-distribution-controlled rectification to rationalize all the observed rectifying behavior that are regulated by mobile-ion-induced interfacial electrochemical reactions and found excellent agreement between theory and experiments. Our study thus demonstrates the possibility of constructing controllable self-rectifying memristors without involving asymmetric complex structures, paving a new way for resolving the sneak current issue in crossbar arrays of memristors.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400010X/pdfft?md5=389eb94bd59a27eadeebbfe9e80195d6&pid=1-s2.0-S277294942400010X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140637886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understand two-dimensional perovskite nanosheets from individual and collective perspectives","authors":"Jianing Duan,&nbsp;Hanlin Cen,&nbsp;Jinfei Dai,&nbsp;Zhaoxin Wu,&nbsp;Jun Xi","doi":"10.1016/j.mtelec.2024.100097","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100097","url":null,"abstract":"<div><p>Two-dimensional (2D) perovskite nanosheets have attracted great attention in recent years due to their unique morphological advantages and high qualifications in constructing miniature optoelectronic devices. However, there remains unexplored aspects regarding the structural evolution during spacer decoupling in nanosheet formation and the recoupling process in heterostructure assembly, which limits the understanding of the nanosheet structure-property relationship. Here, based on the advances and limitations of nanosheet preparations, we recommend further optimization of the synthesis method to achieve quality and prosperity for the whole family (including quasi-2D and Dion-Jacobson phases). Due to structural relaxation stem from extreme reduction of thickness, we propose to explore the microstructural evolution of 2D perovskite nanosheets, e.g. through high-resolution microscopy and spring-mass modeling to understand the different lattice arrangements and vibrational modes of nanosheets compared to bulk materials. Finally, we discuss the preparation and application of heterostructures based on 2D perovskite nanosheets and emphasize the structural rearrangement during van der Waals interface assembly in heterostructures. We hope this work will improve researcher's understanding of structure-property relationship of 2D perovskite nanosheets and accelerate research progress in this field.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100097"},"PeriodicalIF":0.0,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000093/pdfft?md5=c25d5143ddbad73dbca76153c83c40b7&pid=1-s2.0-S2772949424000093-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140536899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparative study on 2D materials with native high-κ oxides for sub-10 nm transistors","authors":"Mayuri Sritharan,&nbsp;Robert K.A. Bennett ,&nbsp;Manasa Kaniselvan,&nbsp;Youngki Yoon","doi":"10.1016/j.mtelec.2024.100096","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100096","url":null,"abstract":"<div><p>Two-dimensional (2D) transition metal dichalcogenides (TMDs) with native high-<span><math><mi>κ</mi></math></span> oxides have presented a new avenue towards the development of next-generation ultra-scaled field-effect transistors (FETs). These materials have been experimentally shown to form a natively compatible oxide layer with a high dielectric constant, which can help scale down both the transistor size and the supply voltage. We present a material and device performance study into the use of several of these materials – namely HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, HfSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, ZrS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, ZrSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> – as channels in sub-10 nm FETs. All four materials exhibit isotropic transport at 10 nm channel length with ON currents over 1000 <span><math><mi>μ</mi></math></span>A/<span><math><mi>μ</mi></math></span>m but show anisotropic transport and degraded ON currents at 5 nm channel length. In general, the sulfide family excels in terms of subthreshold characteristics at sub-10 nm channel lengths. HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, in particular, surpasses all the other materials in terms of ON currents and subthreshold swing (SS), allowing it to also achieve excellent intrinsic performance. We have identified HfS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> as a superior material within this TMD family for sub-10 nm FETs.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100096"},"PeriodicalIF":0.0,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000081/pdfft?md5=a979c6ee2c56af0519ac1f51f526e30a&pid=1-s2.0-S2772949424000081-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140351877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lead-free perovskites for flexible optoelectronics","authors":"Chien Cheng Li,&nbsp;Tzu Yu Huang,&nbsp;Yu Hsuan Lai,&nbsp;Yu Chuan Huang,&nbsp;Chih Shan Tan","doi":"10.1016/j.mtelec.2024.100095","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100095","url":null,"abstract":"<div><p>In modern technology, optoelectronics plays a pivotal role, finding applications in diverse areas like solar cells, light-emitting diodes (LEDs), and photodetectors. Perovskite materials, known for their exceptional optical properties, are gaining attraction due to their light weight, flexibility, and ease of production. The expanding markets of wearable electronics and flexible displays have underscored the importance of developing flexible perovskite optoelectronic devices. However, the prevalent use of lead in high-performance perovskite devices poses significant environmental and health risks, casting doubt on their commercial future. This review commences with examining lead hazards, followed by a discussion on how first-principles calculations aid in designing lead-free perovskites. We survey the synthesized lead-free perovskites and explore their properties. The focus then shifts to the latest advancements in flexible optoelectronic devices utilizing lead-free perovskites, including solar cells, LEDs, and near-infrared photodetectors. Additionally, we explore the role of TCAD (Technology Computer-Aided Design) in simulating and optimizing these devices, highlighting its impact on device design and efficiency.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100095"},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S277294942400007X/pdfft?md5=9e5df612d9062465802c7722fe047cc5&pid=1-s2.0-S277294942400007X-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140296453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cation doping strategy for improved carrier mobility and stability in metal-oxide Heterojunction thin-film transistors","authors":"Boyeon Park ,&nbsp;San Nam ,&nbsp;Youngjin Kang ,&nbsp;Seong-Pil Jeon ,&nbsp;Jeong-Wan Jo ,&nbsp;Sung Kyu Park ,&nbsp;Yong-Hoon Kim","doi":"10.1016/j.mtelec.2024.100090","DOIUrl":"10.1016/j.mtelec.2024.100090","url":null,"abstract":"<div><p>The heterojunction channel architecture has emerged as a viable solution to enhance the performance of metal-oxide thin-film transistors (TFTs), addressing the performance limitations of single-channel counterparts. However, carrier mobility enhancement through a channel thickness design often encounters significant challenges such as the negative threshold voltage (V_th) shift. In this study, we present a cation doping strategy, designed to regulate V_th shift while simultaneously boosting carrier mobility in zinc-tin-oxide (ZTO)-based heterojunction TFTs. A comprehensive investigation of ZTO-based semiconductors was conducted to explore the impact of cation doping on the energy band structure and to find an optimal heterojunction channel structure for high carrier mobility and stability. The resulting ZTO/Ti-doped ZTO (Ti:ZTO) heterojunction TFTs demonstrated a field-effect mobility of 39.7 cm²/Vs, surpassing the performance of ZTO TFTs (16.1 cm²/Vs), with a minimal change in the V_th. Furthermore, the ZTO/Ti:ZTO TFTs exhibited enhanced bias-stress stability compared to the ZTO TFTs. We attribute the improved mobility and stability to the electron accumulation near the oxide channel heterointerface facilitated by band bending and defect passivation effect arising from the Ti:ZTO back-channel layer, respectively.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100090"},"PeriodicalIF":0.0,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000020/pdfft?md5=15f60ff0a0662214a0774d76a56e938b&pid=1-s2.0-S2772949424000020-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140271302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si","authors":"Asraful Haque,&nbsp;Suman Kumar Mandal,&nbsp;Antony Jeyaseelan,&nbsp;Sandeep Vura,&nbsp;Pavan Nukala,&nbsp;Srinivasan Raghavan","doi":"10.1016/j.mtelec.2024.100091","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100091","url":null,"abstract":"<div><p>Heterogenous integration of complex epitaxial oxides onto Si and other target substrates is recently gaining traction. One of the popular methods involves growing a water-soluble and highly reactive sacrificial buffer layer, such as Sr₃Al₂O₆ (SAO), at the interface and a functional oxide on top of this. To improve the versatility of layer transfer techniques, it is desired to utilize stable (less reactive) sacrificial layers without compromising on the transfer rates. In this study, we utilized a combination of chemical vapor deposited (CVD) graphene as a 2D material at the interface and pulsed laser deposited (PLD) water-soluble SrVO₃ (SVO) as a sacrificial buffer layer. We then exploit the well-known enhancement of liquid diffusivities by monolayer graphene to enhance the dissolution rate of SVO over ten times without compromising its atmospheric stability. We demonstrate the versatility of our hybrid- graphene-SVO- template by growing ferroelectric BaTiO₃ (BTO) via PLD and Pb(Zr, Ti)O₃ (PZT) via Chemical Solution Deposition (CSD) technique and transferring them onto the target substrates and establishing their ferroelectric properties. Our hybrid templates allow for the realization of the potential of complex oxides in a plethora of device applications for MEMS, electro-optics, and flexible electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100091"},"PeriodicalIF":0.0,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000032/pdfft?md5=c2a1c2f28f881120c69c5cb5f4cde82c&pid=1-s2.0-S2772949424000032-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140180499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A review on recent advances in anode materials in lithium ion batteries","authors":"Ashish Kumar Mishra,&nbsp;Monika,&nbsp;Balbir Singh Patial","doi":"10.1016/j.mtelec.2024.100089","DOIUrl":"10.1016/j.mtelec.2024.100089","url":null,"abstract":"<div><p>The immediate compelling demand of eco-friendly and portable energy sources for various applications is increasing day by day as the world is moving towards faster technological advancements and industrial revolution. We are surrounded by many gadgets of daily usage which are either needed energy to run them continuously or something to store the energy to make it portable for later use. The invention of battery and continuous research in this field to enhance the electrochemical performance of the existing battery chemistries are hot topics for researchers. Li-ion batteries stood out as the most reliable and suitable device for storing energy. These have applications from small scale such as mobile phone to bigger applications like electric vehicles. Highest theoretical capacity, lightweight, high energy density and many other parameters of Li metal anodes make them attractive choice for the applications which shows lowest electrochemical potential of <span><math><mrow><mo>−</mo><mn>3</mn><mo>.</mo><mn>04</mn><mspace></mspace><mi>V</mi></mrow></math></span> versus standard hydrogen electrode. Storage of more energy, occupying less space and able to deliver better cyclic and rate capability are some prerequisites for the advanced batteries before their usage in bigger applications. Researchers are now trying to find the alternate materials for cathode and anode. The different structural cathode materials are being tested and various anode chemistries have been tried. Silicon additive anodes have the potential to replace the regular graphite anode material because of 10 times larger specific capacity. This paper reviews the anode materials which are currently under research to enhance the performance of Li-ion battery in comparison with the currently commercialized graphite anode. The anode materials reviewed in this paper are categorized based on Li-insertion mechanism as intercalation, alloys, conversion and MOF. The synthesis methods and electrochemical performance are reported and discussed. A comparative study with other metal-ions and metal-air battery is also put forward to make an idea about the efficiency of the material along with the various challenges and future perspective in the development of the anode materials in Li-ion batteries.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100089"},"PeriodicalIF":0.0,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000019/pdfft?md5=f1e00bf265fb44757878fa005a4aa7e3&pid=1-s2.0-S2772949424000019-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139631748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable bioelectronics fabrication through photo-induced swelling of green hydrogels","authors":"Sachin Agate,&nbsp;Lucian Lucia,&nbsp;Lokendra Pal","doi":"10.1016/j.mtelec.2023.100088","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100088","url":null,"abstract":"<div><p>Electrical circuit manufacture for flexible electronics is a very specialized printing process in which electrically functional inks are printed onto a substrate. In almost all cases, the substrate assumes a passive role in ink distribution, which has been the conventional methodology used up until now. Herein we have discovered that a sodium carboxymethyl cellulose (CMC<img>Na) hydrogel substrate demonstrates heightened susceptibility to UV photo-irradiating and because of molecular-level bond lability that leads to a macroscopic improved swelling (“writing” action). The localized photo-activated events lead to temporary 3D contours on the hydrogel substrate where conductive ink is held in valleys to allow the formation of conductive traces. A self-distribution of ink in the valleys is achieved which, moreover, is a type of mask-based photolithography or digital image generation. The process can be employed for polymeric inks such as PEDOT:PSS to obtain ink patterns without need of complex inkjet printers or other conventional printers. The drying causes recession of the temporary swollen hydrogel contours and returns the surface to flattened format. The process works at lower ink solids of 0.125 % and has shown that 1.15 J/mm² of UV energy is capable of creating an electrically isolated conductive pattern. Initial water content of the system plays an important role in which 20 g/g of absorbed water/substrate is sufficient for acceptable pattern generation.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100088"},"PeriodicalIF":0.0,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000645/pdfft?md5=09370beb9886da766ca94586c7946db1&pid=1-s2.0-S2772949423000645-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139100355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The outlook of flexible DBD-plasma devices: Applications in food science and wound care solutions","authors":"Thu Minh Nguyen ,&nbsp;Neha Kaushik ,&nbsp;Tung Thanh Nguyen ,&nbsp;Eun Ha Choi ,&nbsp;Linh Nhat Nguyen ,&nbsp;Nagendra Kumar Kaushik","doi":"10.1016/j.mtelec.2023.100087","DOIUrl":"https://doi.org/10.1016/j.mtelec.2023.100087","url":null,"abstract":"<div><p>Flexible dielectric barrier discharge (FXDBD) plasma devices have received extensive attention for the surface treatment of larger areas, nonflat surfaces, or curved objects. The rapid development of flexible electronics technology allows unrestricted versatility for designing and manufacturing FXDBD devices. The flexible structure of FXDBD plasma opens new possibilities that cannot be effectively achieved by conventional rigid-body plasma systems, particularly in treating complex surface structures in biological targets. Over the last decade, FXDBD plasma devices have been broadly utilized for surface sterilization, wound solutions, and food processing applications. This review provides a comprehensive overview of current advances in FXDBD plasma, considering important aspects of manufacturing processes and critical application accomplishments. The challenges and perspectives for the future development of FXDBD plasma are also discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100087"},"PeriodicalIF":0.0,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000633/pdfft?md5=b44bccc62808a4e142a81e38467b7f7d&pid=1-s2.0-S2772949423000633-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139100356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in perovskite/Cu(In,Ga)Se2 tandem solar cells","authors":"Yuchen Xiong ,&nbsp;Zijun Yi ,&nbsp;Wenguang Zhang ,&nbsp;Yihuai Huang ,&nbsp;Zhihong Zhang ,&nbsp;Qinghui Jiang ,&nbsp;Xin Ren Ng ,&nbsp;Guibin Shen ,&nbsp;Yubo Luo ,&nbsp;Xin Li ,&nbsp;Junyou Yang","doi":"10.1016/j.mtelec.2023.100086","DOIUrl":"10.1016/j.mtelec.2023.100086","url":null,"abstract":"<div><p>Tandem solar cells (TSCs) are poised to revolutionize photovoltaic (PV) technology as they hold the promise of a significantly higher power conversion efficiency (PCE) compared to the current dominant single-junction solar cells. TSCs are composed of two different absorbing materials, strategically utilizing the shared incident solar spectrum to achieve a synergistic boost in PCE. The perovskite/Cu(In,Ga)Se₂ (CIGS) TSCs, as a cutting-edge and prospective solar energy conversion device, have sparked widespread research interest by synergistically combining the unique advantages of perovskite and CIGS materials. This comprehensive review presents a thorough investigation of the latest research advancements in perovskite/CIGS TSCs, with a specific focus on the intricacies of device structure design and state-of-the-art fabrication methods. Significant attention is devoted to elucidating the pivotal role of interface engineering, material composition optimization, and precise control of processing parameters in determining the PV performance of the devices. By optimizing the stacked architecture and enhancing material interfaces, the review demonstrates how substantial improvements have been achieved in terms of high-efficiency PV conversion and superior carrier transport, consequently elevating the performance and long-term device stability. Finally, the review provides a compelling outlook on the future development of perovskite/CIGS TSCs, aiming to drive further advancements and practical applications of this advanced technology.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"7 ","pages":"Article 100086"},"PeriodicalIF":0.0,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949423000621/pdfft?md5=2b0d2601130da2733c90d67d6692a157&pid=1-s2.0-S2772949423000621-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139018165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}