Thermodynamic modeling of Bi2Te3 in the defect energy formalism

Adetoye H. Adekoya, G. Jeffrey Snyder
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Abstract

Bi2Te3 is a promising thermoelectric material that is often touted as one of the best-performing low-temperature thermoelectric materials. As a result, it has been widely used commercially, both for clean energy generation and in cooling devices. Like many other thermoelectric materials, defects play a key role in the performance of Bi2Te3. As a result, numerous studies have attempted to experimentally and computationally map out the dominant defects in the phase, these include efforts to determine the dominant defect, estimate defect energies, and predict their concentration. The computer coupling of phase diagrams and thermochemistry (CALPHAD) is one of many tools under the auspices of the materials genome initiative (MGI) that enables the rapid design of new functional materials with improved properties. The Defect energy formalism (DEF) with a charged sublattice, an offshoot of the Compound energy formalism (CEF), provides a way to directly include first-principle defect energy calculations into CALPHAD descriptions of solid phases. The introduction of the charge sublattice enables the estimation of the free carrier concentrations in the phase. Here we apply the DEF to the Bi2Te3 system, emphasizing the robustness of the DEF in describing meaningful endmembers and the elimination of fitting parameters. Unlike previous assessments using the Wagner–Schottky defect model, we include the description of the charged defects in our assessment. The DEF with a charged sublattice provides a good prediction of the non-stoichiometry of the phase when compared with experimental data and also predicts a thermodynamic defect concentration at low temperature that is physically reasonable.

Abstract Image

缺陷能形式主义下的 Bi2Te3 热力学建模
Bi2Te3 是一种前景广阔的热电材料,经常被誉为性能最佳的低温热电材料之一。因此,它已被广泛用于商业用途,既可用于清洁能源发电,也可用于冷却设备。与许多其他热电材料一样,缺陷对 Bi2Te3 的性能起着关键作用。因此,许多研究都试图通过实验和计算找出该相中的主要缺陷,包括确定主要缺陷、估计缺陷能量和预测缺陷浓度。相图和热化学的计算机耦合(CALPHAD)是材料基因组计划(MGI)支持下的众多工具之一,它使人们能够快速设计出性能更好的新型功能材料。带电子晶格的缺陷能形式主义(DEF)是化合物能形式主义(CEF)的一个分支,它提供了一种将第一原理缺陷能计算直接纳入 CALPHAD 固相描述的方法。引入电荷子晶格可以估算相中的自由载流子浓度。在此,我们将 DEF 应用于 Bi2Te3 体系,强调 DEF 在描述有意义的内含物和消除拟合参数方面的稳健性。与以往使用瓦格纳-肖特基缺陷模型进行的评估不同,我们在评估中加入了对带电缺陷的描述。与实验数据相比,带电亚晶格的 DEF 能很好地预测该相的非全度性,而且还能预测低温下的热力学缺陷浓度,这在物理上是合理的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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