Materials Today Electronics最新文献_第4页

Low-dimensional halide perovskites for advanced electronics 用于先进电子器件的低维卤化物过氧化物

Materials Today Electronics Pub Date : 2024-08-04 DOI: 10.1016/j.mtelec.2024.100111

Seung Ju Kim , Sungwoo Park , Hyo Min Cho , Ho Won Jang

{"title":"Low-dimensional halide perovskites for advanced electronics","authors":"Seung Ju Kim , Sungwoo Park , Hyo Min Cho , Ho Won Jang","doi":"10.1016/j.mtelec.2024.100111","DOIUrl":"10.1016/j.mtelec.2024.100111","url":null,"abstract":"<div><p>Halide perovskites are gaining prominence as promising materials for future electronic applications, primarily due to their unique properties including long carrier diffusion lengths, tunable bandgap, facile synthesis, and cost efficiency. However, polycrystalline halide perovskite thin films, which have been widely studied to date, have significant drawbacks including uncontrollable grain boundaries and instability issues. Recently, low-dimensional halide perovskites (LD HPs) offer enhanced stability and adaptable morphologies, making them attractive candidates for next-generation electronics beyond optoelectronics. This review comprehensively explores recent advancements in LD HP-based electronics, covering structural characteristics, synthesis methods tailored to different dimensions, and diverse applications. Furthermore, the impressive performance demonstrated by LD HPs in electronic applications including resistive random-access memory, advanced transistors, and neuromorphic computing hardware is discussed. Finally, the review outlines the challenges and perspectives required to scale up LD HP-based advanced electronics for commercial production, offering valuable insights for researchers venturing into the realm of new materials for advanced electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100111"},"PeriodicalIF":0.0,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000238/pdfft?md5=855942b1b823e11c24449a86d4a728d3&pid=1-s2.0-S2772949424000238-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141979480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Piezo-phototronic and pyro-phototronic effects enabled advanced high-performance metal halide perovskite optoelectronics 压电光子效应和热释光子效应实现了先进的高性能金属卤化物包晶光电子学

Materials Today Electronics Pub Date : 2024-07-19 DOI: 10.1016/j.mtelec.2024.100110

Wanli Xie , Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He

{"title":"Piezo-phototronic and pyro-phototronic effects enabled advanced high-performance metal halide perovskite optoelectronics","authors":"Wanli Xie , Yitong Wang , Fangpei Li , Wenbo Peng , Yongning He","doi":"10.1016/j.mtelec.2024.100110","DOIUrl":"10.1016/j.mtelec.2024.100110","url":null,"abstract":"<div><p>In recent years, metal halide perovskite materials have been successfully adopted in various optoelectronic applications, owing to their remarkable material properties. Notably, the piezo-phototronic effect (a coining effect of piezoelectric, semiconducting and photoexcitation properties) in metal halide perovskite can be expected to further enhance device performances. In this review, we provide a comprehensive overview of metal halide perovskite materials and their recent advancements through the utilization of the piezo-phototronic effect and the pyro-phototronic effect. Firstly, the molecular structure, growing methods, optical and piezoelectric properties of perovskite are discussed. Subsequently, this review delves into the fundamental principles and practical applications of the piezo-phototronic effect, emphasizing its significance in diverse fields such as. Thirdly, recent studies on the pyro-phototronic effect, spintronics, and light emission are surveyed. Last but not least, challenges that may hinder the development of the piezo-phototronic effect and pyro-phototronic effect in perovskites are summarized. This review emphasizes the advances in the application of the piezo-/pyro-phototronic effect in perovskite-based optoelectronic devices. It aims to provide a comprehensive understanding of the piezo-/pyro-phototronic effect as an effective tool to enhance device performances as well as to inspire potential design for high-performance perovskite-based optoelectronic devices in the future.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100110"},"PeriodicalIF":0.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000226/pdfft?md5=9f158482c779c4e00ad3636f78add295&pid=1-s2.0-S2772949424000226-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermodynamic modeling of Bi2Te3 in the defect energy formalism 缺陷能形式主义下的 Bi2Te3 热力学建模

Materials Today Electronics Pub Date : 2024-07-05 DOI: 10.1016/j.mtelec.2024.100109

Adetoye H. Adekoya, G. Jeffrey Snyder

{"title":"Thermodynamic modeling of Bi2Te3 in the defect energy formalism","authors":"Adetoye H. Adekoya, G. Jeffrey Snyder","doi":"10.1016/j.mtelec.2024.100109","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100109","url":null,"abstract":"<div><p>Bi<sub>2</sub>Te<sub>3</sub> is a promising thermoelectric material that is often touted as one of the best-performing low-temperature thermoelectric materials. As a result, it has been widely used commercially, both for clean energy generation and in cooling devices. Like many other thermoelectric materials, defects play a key role in the performance of Bi<sub>2</sub>Te<sub>3</sub>. As a result, numerous studies have attempted to experimentally and computationally map out the dominant defects in the phase, these include efforts to determine the dominant defect, estimate defect energies, and predict their concentration. The computer coupling of phase diagrams and thermochemistry (CALPHAD) is one of many tools under the auspices of the materials genome initiative (MGI) that enables the rapid design of new functional materials with improved properties. The Defect energy formalism (DEF) with a charged sublattice, an offshoot of the Compound energy formalism (CEF), provides a way to directly include first-principle defect energy calculations into CALPHAD descriptions of solid phases. The introduction of the charge sublattice enables the estimation of the free carrier concentrations in the phase. Here we apply the DEF to the Bi<sub>2</sub>Te<sub>3</sub> system, emphasizing the robustness of the DEF in describing meaningful endmembers and the elimination of fitting parameters. Unlike previous assessments using the Wagner–Schottky defect model, we include the description of the charged defects in our assessment. The DEF with a charged sublattice provides a good prediction of the non-stoichiometry of the phase when compared with experimental data and also predicts a thermodynamic defect concentration at low temperature that is physically reasonable.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100109"},"PeriodicalIF":0.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000214/pdfft?md5=00431a08ddbaf489816d0452b157c7af&pid=1-s2.0-S2772949424000214-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141596413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revolutionizing photovoltaics: From back-contact silicon to back-contact perovskite solar cells 光伏技术的革命：从背接触硅到背接触包晶体太阳能电池

Materials Today Electronics Pub Date : 2024-06-10 DOI: 10.1016/j.mtelec.2024.100106

Waqas Ahmad , Chi Li , Wei Yu , Peng Gao

{"title":"Revolutionizing photovoltaics: From back-contact silicon to back-contact perovskite solar cells","authors":"Waqas Ahmad , Chi Li , Wei Yu , Peng Gao","doi":"10.1016/j.mtelec.2024.100106","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100106","url":null,"abstract":"<div><p>Interdigitated back-contact (IBC) electrode configuration is a novel approach toward highly efficient Photovoltaic (PV) cells. Unlike conventional planar or sandwiched configurations, the IBC architecture positions the cathode and anode contact electrodes on the rear side of the solar cell. This review provides a comprehensive overview of back-contact (BC) solar cells, commencing with the historical context of the inception of the back-contact silicon (BC-Si) solar cells and its progression into various designs such as metallization wrap through, emitter wrap through, and interdigitated configurations. This review emphasizes back-contact perovskite solar cells (BC-PSCs), due to their potential for achieving higher efficiencies and better stability compared to traditional PSC architectures. Herein, we discuss the classification of BC-PSCs based on the position of rear electrodes, including interdigitated and quasi-interdigitated structures. These structures are further analyzed by investigating their implementation via various electrode patterning techniques, such as photolithography, microsphere lithography, cracked film lithography, network-like porous titanium (Ti) electrodes, v-shaped grooves, and lateral-structure perovskite single crystal/shadow masks, used in the development of various types of BC-PSCs. Finally, this review concludes by suggesting potential solutions to the current challenges associated with BC-PSCs to tap into the full potential of this technology. This review aims to provide readers with an in-depth understanding of the latest advancements in BC PV technology, particularly BC-PSCs, and the potential directions for future research and innovation.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"9 ","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000184/pdfft?md5=9c6bb65ce374a79062247a5e86e80822&pid=1-s2.0-S2772949424000184-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141325469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bismuth-based ferroelectric memristive device induced by interface barrier for neuromorphic computing 用于神经形态计算的界面屏障诱导铋基铁电记忆器件

Materials Today Electronics Pub Date : 2024-06-01 DOI: 10.1016/j.mtelec.2024.100105

Zhi-Long Chen, Yang Xiao, Yang-Fan Zheng, Yan-Ping Jiang, Qiu-Xiang Liu, Xin-Gui Tang

{"title":"Bismuth-based ferroelectric memristive device induced by interface barrier for neuromorphic computing","authors":"Zhi-Long Chen, Yang Xiao, Yang-Fan Zheng, Yan-Ping Jiang, Qiu-Xiang Liu, Xin-Gui Tang","doi":"10.1016/j.mtelec.2024.100105","DOIUrl":"10.1016/j.mtelec.2024.100105","url":null,"abstract":"<div><p>The development of the Internet of Things (IoT) not only facilitates our lives but also dramatically grows data. Artificial synaptic devices appear to represent an emerging physical solution compared to the existing computational architectures. Memristive devices are of great interest with their high integration and low power consumption in the field of synaptic devices. In this work, we demonstrate short-term plasticity (STP) and long-term plasticity (LTP) by regulating synaptic weights with different stimulus pulses. Moreover, the application in neuromorphic computing is further exhibited by image recognition with an accuracy of 95.2 % under the modified National Institute of Standards and Technology database. Therefore, Nd-doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> memristors, as emerging artificial synaptic devices, are expected to achieve breakthroughs in artificial intelligence and promote the development of neuromorphic computing and intelligent systems.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000172/pdfft?md5=5ce3ce238e78a5135c0d666469eee2eb&pid=1-s2.0-S2772949424000172-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141229968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanocellulose/zero, one- and two-dimensional inorganic additive based electrodes for advanced supercapacitors 基于纳米纤维素/零、一维和二维无机添加剂的先进超级电容器电极

Materials Today Electronics Pub Date : 2024-05-15 DOI: 10.1016/j.mtelec.2024.100103

Ashvinder K. Rana , Phil Hart , Vijay Kumar Thakur

{"title":"Nanocellulose/zero, one- and two-dimensional inorganic additive based electrodes for advanced supercapacitors","authors":"Ashvinder K. Rana , Phil Hart , Vijay Kumar Thakur","doi":"10.1016/j.mtelec.2024.100103","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100103","url":null,"abstract":"<div><p>Nowadays, the growing threat of environmental pollution and the energy crisis have accelerated the advancement of sustainable energy sources and highly efficient energy storage technologies. Supercapacitors' outstanding efficiency and accessibility have attracted much interest in portable electronics. However, compared to other energy storage devices, commercially available supercapacitors offer minimal advantages, and it is also very difficult to balance their electrochemical performance, such as cyclability, energy density, and capacitance. Fabricating high-performance supercapacitors with attractive electrical parameters and flexibility depends on the composition of the electrodes.</p><p>Nanocellulose, which is derived from waste biomass because of its high mechanical strength, strong chemical reactivity, and biodegradability, has been used to integrate 2D, 1D, and zero-dimensional inorganic additive materials to develop a promising material for supercapacitor electrodes. The present review summarises recent advancements in the progress of nanocellulose/2D-, 1D-, and zero-dimensional inorganic material-based composite electrodes for their application in supercapacitors. Different strategies for developing nanocellulose/inorganic additive-based composite electrodes are reviewed, and subsequently, the potential of nanocellulose/multidimensional inorganic additive-based electrodes in supercapacitors is fully elaborated. In the end, current challenges and future directions for the development finally, current challenges and future directions for developing nano cellulose-based nanocomposite electrodes in supercapacitors were also discussed.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100103"},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000159/pdfft?md5=0aeb3aa2a09d04cb7cb3a9ac7b49a975&pid=1-s2.0-S2772949424000159-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140947279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-linear Hall effects: Mechanisms and materials 非线性霍尔效应：机理与材料

Materials Today Electronics Pub Date : 2024-05-10 DOI: 10.1016/j.mtelec.2024.100101

Arka Bandyopadhyay, Nesta Benno Joseph, Awadhesh Narayan

{"title":"Non-linear Hall effects: Mechanisms and materials","authors":"Arka Bandyopadhyay, Nesta Benno Joseph, Awadhesh Narayan","doi":"10.1016/j.mtelec.2024.100101","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100101","url":null,"abstract":"<div><p>This review presents recent breakthroughs in the realm of nonlinear Hall effects, emphasizing central theoretical foundations and recent experimental progress. We elucidate the quantum origin of the second-order Hall response, focusing on the Berry curvature dipole, which may arise in inversion symmetry broken systems. The theoretical framework also reveals the impact of disorder scattering effects on the nonlinear response. We further discuss the possibility of obtaining nonlinear Hall responses beyond the second order. We examine symmetry-based indicators essential for the manifestation of nonlinear Hall effects in time-reversal symmetric crystals, setting the stage for a detailed exploration of theoretical models and candidate materials predicted to exhibit sizable and tunable Berry curvature dipole. We summarize groundbreaking experimental reports on measuring both intrinsic and extrinsic nonlinear Hall effects across diverse material classes. Finally, we highlight some of the other intriguing nonlinear effects, including nonlinear planar Hall, nonlinear anomalous Hall, and nonlinear spin and valley Hall effects. We conclude with an outlook on pivotal open questions and challenges, marking the trajectory of this rapidly evolving field.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100101"},"PeriodicalIF":0.0,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000135/pdfft?md5=c8c428c68d1f302a927171e35235b853&pid=1-s2.0-S2772949424000135-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140901468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly flexible and transparent amorphous indium doped tin oxide on bio-compatible polymers for transparent wearable sensors 用于透明可穿戴传感器的生物兼容聚合物上的高柔性透明非晶掺铟氧化锡

Materials Today Electronics Pub Date : 2024-05-07 DOI: 10.1016/j.mtelec.2024.100104

Yu-Kyung Oh , Minchul Sung , Jin Woong Kim , Han-Ki Kim

{"title":"Highly flexible and transparent amorphous indium doped tin oxide on bio-compatible polymers for transparent wearable sensors","authors":"Yu-Kyung Oh , Minchul Sung , Jin Woong Kim , Han-Ki Kim","doi":"10.1016/j.mtelec.2024.100104","DOIUrl":"10.1016/j.mtelec.2024.100104","url":null,"abstract":"<div><p>Highly transparent and flexible amorphous Sn-doped In<sub>2</sub>O<sub>3</sub> (a-ITO) films deposited on flexible and bio-compatible cyclic olefin polymer (COP) substrate using a direct-current magnetron sputtering at room temperature were used as flexible and transparent electrodes for transparent wearable sensors. The figure of merits (FoM) value was calculated to determine the optimal sputtering process for the a-ITO electrodes by varying the direct current power, working pressure, oxygen flow rate, and a-ITO thickness. The optimized a-ITO/COP with a high FoM value of 8.9 exhibited a low sheet resistance of 36 Ohm/square, average transmittances of 89.5 % in the visible wavelength region, and a small critical bending radius of 7 mm, which are acceptable transparent electrodes for fabrication of wearable and transparent wearable sensors. To demonstrate the feasibility of the a-ITO/COP substrate as a promising wearable sensor, we examined the performance of wearable temperature sensors, wearable heaters, and wearable glucose sensors. The successful operation of a-ITO/COP-based temperature sensors with high sensitivity, transparent heaters with a saturation temperature of 87.8 °C at 6 V, and glucose sensors with high sensitivity indicates that a-ITO/COP is a promising bio-compatible electrode for next-generation wearable bionic electronics.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000160/pdfft?md5=7493bf2f6029daacbd15d00c60fe31b9&pid=1-s2.0-S2772949424000160-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141045254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transport studies in piezo-semiconductive ZnO nanotetrapod based electronic devices 基于压电半导体的氧化锌纳米四极管电子器件的传输研究

Materials Today Electronics Pub Date : 2024-04-30 DOI: 10.1016/j.mtelec.2024.100102

Zhiwei Zhang , Morten Willatzen , Yogendra Kumar Mishra , Zhong Lin Wang

{"title":"Transport studies in piezo-semiconductive ZnO nanotetrapod based electronic devices","authors":"Zhiwei Zhang , Morten Willatzen , Yogendra Kumar Mishra , Zhong Lin Wang","doi":"10.1016/j.mtelec.2024.100102","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100102","url":null,"abstract":"<div><p>ZnO nanotetrapods (ZnO NTs) with a non-centrosymmetric crystal structure consisting of four 1-D arms interconnected together through a central crystalline core, introduce interesting piezoelectric semiconducting responses in nanorods in the bent state. Considering the widespread applications of nanotetrapods in semiconductor devices, it becomes very crucial to establish a coupled model based on piezoelectric and piezotronic effects to investigate the carrier transport mechanism, which is being reported here in detail for the first time. In this work, we established a multiphysics coupled model of stress-regulated charge carrier transport by the finite element method (FEM), which considers the full account of the wurtzite (WZ) and zinc blende (ZB) regions as well as the spontaneous polarization dependence and the dependence of the material properties on the arm orientation. It is discovered that the forward gain of ZnO NT in the lateral force working mode is almost 50 % higher than that in the nanorod or in the normal force working mode while the reverse current is reduced to negligible. Through the simulation calculations and corresponding analysis, it is confirmed that the developed piezoelectric polarization charges are able to regulate the transport and distribution of carriers in ZnO crystal, which lays a theoretical foundation for the application of piezo-semiconductive ZnO NT devices in advanced technologies.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100102"},"PeriodicalIF":0.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000147/pdfft?md5=2ebedd9e481331e9ead5e93947b711e5&pid=1-s2.0-S2772949424000147-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140878683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Aromatic spacer engineering for 2D halide perovskites and their application in solar cells 二维卤化物包晶的芳香族间隔物工程及其在太阳能电池中的应用

Materials Today Electronics Pub Date : 2024-04-30 DOI: 10.1016/j.mtelec.2024.100100

Yi Shen , Siliang Hu , You Meng , SenPo Yip , Johnny C. Ho

{"title":"Aromatic spacer engineering for 2D halide perovskites and their application in solar cells","authors":"Yi Shen , Siliang Hu , You Meng , SenPo Yip , Johnny C. Ho","doi":"10.1016/j.mtelec.2024.100100","DOIUrl":"https://doi.org/10.1016/j.mtelec.2024.100100","url":null,"abstract":"<div><p>Perovskites have emerged as a promising new generation of photovoltaic conversion materials, gradually surpassing traditional silicon-based materials in solar cell research. This development is primarily due to their superior power-conversion efficiency (PCE), simple fabrication process, and cost-effective production. However, the low stability of perovskite ionic crystals poses a significant challenge to their stability, hindering the progress of perovskite materials and devices. Although two-dimensional (2D) perovskites offer improved stability, adding organic amine ions results in a quantum confinement effect that reduces the optoelectronic performance of devices. To counter this issue, the strategic design of suitable spacer cations offers a potential solution. Aromatic amine ions possess greater polarity and structural adjustability compared to aliphatic amine ions, making them advantageous in mitigating the quantum confinement effect. This review focuses on phenylethylammonium (PEA) as a representative aromatic spacer cation. It categorizes the evolution of these cations into four trajectories: alkyl chain modification, substitution of hydrogen atoms on the aromatic ring with specific substituents, replacement of benzene rings with aromatic heterocycles, and utilization of multiple aromatic rings instead of a monoaromatic ring. The structure, properties, and corresponding device performance of aromatic spacer cations utilized in reported 2D perovskites are discussed, followed by the presentation of a series of factors for selecting and designing aromatic amine ions for future development.</p></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"8 ","pages":"Article 100100"},"PeriodicalIF":0.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2772949424000123/pdfft?md5=22114eb238124e126c59fed5a00159cd&pid=1-s2.0-S2772949424000123-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140878682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0