Cu3InSnSe5 和 MnSe 伪二元固溶体的热电性能

Guanzheng Luo, Wang Li, Yingchao Wei, Yao Dai, Wenjie Shu, Linyao Wu, Xin Li, Yubo Luo, Junyou Yang
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引用次数: 0

摘要

Cu3InSnSe5 是一种新发现的铜基类金刚石热电半导体,其中的 MnSe 合金可进一步提高其热电性能。我们观察到 MnSe2 沉淀的形成有效地分散了低频声子,从而显著降低了中低温下的晶格热导率。虽然大量的 MnSe 合金会导致 MnSe2 沉淀的形成,从而增强声子散射,但较少的 MnSe 含量也会在一定程度上提高功率因数。最终,我们的研究通过 10 mol.% MnSe 合金 Cu3InSnSe5 伪二元固溶体,在 300-773 K 温度范围内实现了 1.00 的峰值 ZT 和 0.50 的平均 ZT,证明了 MnSe 合金在优化铜基类金刚石半导体材料热电性能方面的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution

Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution
Cu3InSnSe5 is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe2 precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe2 precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak ZT of 1.00 and an average ZT of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu3InSnSe5 pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.
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