二维铁磁异质结构中的巨自发谷极化

Xian Wang, Jing-Yang You
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引用次数: 0

摘要

筛选具有固有平面外磁化的二维(2D)材料是自发谷极化的关键。基于第一性原理计算,研究了2D ScX2(X=Cl,Br和I)单层及其范德华结的热力学稳定性、磁阶和电子能带结构,以识别势谷材料,而它们的单层和同结构双层表现出固有的平面内磁化。特别地,发现当ScI2的磁化方向向z方向偏移时,ScI2具有最强的谷极化效应。提出了一种通过创建具有单层MSe2(M=Zr、Hf和Sn)的异质结构来实现平面外磁化的策略。所有这些构建的异质结构都显示出具有增强的谷分裂的平面外磁化。预测的最强谷分裂在异质结构ScI2/ZrSe2中达到约121meV,这比原始ScI2单层中的大得多,表明压缩的ScI2晶格和与MSe2的层间相互作用都导致了谷极化的增强。值得注意的是,I原子的px和py轨道的杂化在异质结构中增加,并且是磁化变化的原因。我们的研究不仅扩展了二维自发谷极化的家族,而且为二维valleytronics的基础研究提供了深入的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Giant spontaneous valley polarization in two-dimensional ferromagnetic heterostructures

Screening two-dimensional (2D) materials with inherent out-of-plane magnetization is the key to spontaneous valley polarization. Based on first-principles calculations, the thermodynamic stability, magnetic orders and electronic band structures of 2D ScX2 (X = Cl, Br and I) monolayers and their van der Waals junctions are studied to identify potential valley materials, while their monolayers and homo-structural bilayers exhibit intrinsic in-plane magnetization. Particularly, ScI2 is found to have a strongest valley polarization effect when its magnetization direction is shifted to the z direction. A strategy is proposed to achieve out-of-plane magnetization by creating hetero-structures with monolayer MSe2 (M=Zr, Hf and Sn). All these constructed heterostructures display out-of-plane magnetization with enhanced valley splitting. The predicted strongest valley splitting reaches about 121 meV in the heterostructure ScI2/ZrSe2, which is much larger than that in the pristine ScI2 monolayer, demonstrating enhanced valley polarization that results from both the compressed ScI2 lattice and the interlayer interaction with MSe2. It is noted that the hybridization of px and py orbitals of I atoms is increased in heterostructures and is responsible for magnetization variation. Our study not only extends the family of 2D spontaneous valley polarization, but also provides in-depth insights for the fundamental investigations of 2D valleytronics.

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