Yimin Sun , Ting Wang , Jiali Luo , Jianhua Chen , Wei Huang , Junqiao Ding
{"title":"多孔半导体晶体管及其应用","authors":"Yimin Sun , Ting Wang , Jiali Luo , Jianhua Chen , Wei Huang , Junqiao Ding","doi":"10.1016/j.mtelec.2025.100151","DOIUrl":null,"url":null,"abstract":"<div><div>Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100151"},"PeriodicalIF":0.0000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Porous semiconductor-based transistors and their applications\",\"authors\":\"Yimin Sun , Ting Wang , Jiali Luo , Jianhua Chen , Wei Huang , Junqiao Ding\",\"doi\":\"10.1016/j.mtelec.2025.100151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.</div></div>\",\"PeriodicalId\":100893,\"journal\":{\"name\":\"Materials Today Electronics\",\"volume\":\"12 \",\"pages\":\"Article 100151\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2772949425000178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949425000178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Porous semiconductor-based transistors and their applications
Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.