多孔半导体晶体管及其应用

Yimin Sun , Ting Wang , Jiali Luo , Jianhua Chen , Wei Huang , Junqiao Ding
{"title":"多孔半导体晶体管及其应用","authors":"Yimin Sun ,&nbsp;Ting Wang ,&nbsp;Jiali Luo ,&nbsp;Jianhua Chen ,&nbsp;Wei Huang ,&nbsp;Junqiao Ding","doi":"10.1016/j.mtelec.2025.100151","DOIUrl":null,"url":null,"abstract":"<div><div>Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.</div></div>","PeriodicalId":100893,"journal":{"name":"Materials Today Electronics","volume":"12 ","pages":"Article 100151"},"PeriodicalIF":0.0000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Porous semiconductor-based transistors and their applications\",\"authors\":\"Yimin Sun ,&nbsp;Ting Wang ,&nbsp;Jiali Luo ,&nbsp;Jianhua Chen ,&nbsp;Wei Huang ,&nbsp;Junqiao Ding\",\"doi\":\"10.1016/j.mtelec.2025.100151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.</div></div>\",\"PeriodicalId\":100893,\"journal\":{\"name\":\"Materials Today Electronics\",\"volume\":\"12 \",\"pages\":\"Article 100151\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2772949425000178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Electronics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772949425000178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

将多孔半导体集成到晶体管中是研究和创新的关键领域,因为它提供了一个独特的机会,通过在纳米尺度上精确控制材料特性来提高器件性能。此外,它还引入了实现具有更高效率、灵活性和功能的下一代电子产品的潜力。在本文中,我们首先介绍了用于晶体管的典型密集沟道材料,并强调了利用多孔半导体的优点。随后,总结了各种类型的多孔半导体的最新进展,包括用于晶体管通道的纳米孔、微孔和纳米孔材料。通过系统地分析这些材料的结构-性能-应用关系,我们为该领域的机遇和挑战提供了前瞻性的视角。本文综述为推进晶体管技术和扩大其在各种电子应用领域的潜力奠定了全面的基础和前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Porous semiconductor-based transistors and their applications

Porous semiconductor-based transistors and their applications
Incorporation of porous semiconductors into transistors is a crucial area of research and innovation as it offers a unique opportunity to enhance device performance through precise control of material characteristics at the nanoscale. Moreover, it introduces the potential for the realization of next-generation electronics with higher efficiency, flexibility, and functionality. In this review, we first introduce typical dense channel materials employed in transistors and highlight the advantages of utilizing porous semiconductors. Subsequently, recent advances in various types of porous semiconductors, including nanoporous, microporous, and nanomesh materials used in transistor channels, are summarized. By systematically analyzing the structure-property-application relationships of these materials, we provide a forward-looking perspective on both opportunities and challenges in the field. The review establishes a comprehensive foundation and perspective for advancing transistor technology and broadening its potential across diverse electronic applications.
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