Advanced Physics Research最新文献_第4页

Integrating First Principles Calculations and Machine Learning to Study the ReNiO2/Ti3C2 Heterojunctions for Sodium Ion Batteries 结合第一性原理计算和机器学习研究钠离子电池ReNiO2/Ti3C2异质结

IF 2.8

Advanced Physics Research Pub Date : 2025-06-03 DOI: 10.1002/apxr.202500052

Yuanyuan Cui, Chengyu Zhang, Luxin Niu, Jiao Zheng, Xin Liu, Sihan Yang, Yanfeng Gao

{"title":"Integrating First Principles Calculations and Machine Learning to Study the ReNiO2/Ti3C2 Heterojunctions for Sodium Ion Batteries","authors":"Yuanyuan Cui, Chengyu Zhang, Luxin Niu, Jiao Zheng, Xin Liu, Sihan Yang, Yanfeng Gao","doi":"10.1002/apxr.202500052","DOIUrl":"10.1002/apxr.202500052","url":null,"abstract":"Due to the large size of sodium ions and their slow redox kinetics in electrochemical processes, the sodium ion batteries currently are still far from satisfactory. This study investigates the electrical transport properties of ReNiO2/ Ti3C2 heterojunctions in sodium ion batteries through a combination of first principles calculations and machine learning analysis. The ReNiO2/Ti3C2 heterojunctions exhibit metallic characteristics and enhanced electronic conductivity due to the hybridization of p-d orbitals and the strengthening of Ni─Ti metal bonds. The sodium ion migration energy barrier decreases with increasing rare earth atomic number, facilitating ion transport. Machine learning analysis identifies key factors influencing ion and electron transport rates, including strain, lattice constants, and doping concentration. These findings provide theoretical guidance for designing more efficient negative electrodes for sodium ion batteries.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500052","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Anomalies in Condensed Matter 凝聚态物质中的量子异常

IF 2.8

Advanced Physics Research Pub Date : 2025-05-27 DOI: 10.1002/apxr.202400189

Michael T. Pettes, Shi-Zeng Lin, Elizabeth A. Peterson, Jian-Xin Zhu, Laurel E. Winter, Johanna C. Palmstrom, Jinkyoung Yoo, Nicholas S. Sirica, Prashant Padmanabhan, Priscila F. S. Rosa, Sean M. Thomas, Avadh Saxena

{"title":"Quantum Anomalies in Condensed Matter","authors":"Michael T. Pettes, Shi-Zeng Lin, Elizabeth A. Peterson, Jian-Xin Zhu, Laurel E. Winter, Johanna C. Palmstrom, Jinkyoung Yoo, Nicholas S. Sirica, Prashant Padmanabhan, Priscila F. S. Rosa, Sean M. Thomas, Avadh Saxena","doi":"10.1002/apxr.202400189","DOIUrl":"10.1002/apxr.202400189","url":null,"abstract":"Quantum materials provide a fertile ground in which to test and realize unusual phenomena such as quantum anomalies predicted by quantum field theory. There are three important symmetries that are broken when classical field theory is moved into the quantum regime, the scale anomaly, the axial (chiral) anomaly, and the parity anomaly. Several potential device applications may be realized by the discovery of quantum anomalies in condensed matter, enabled by the new physics they embody, including ultra-sensitive dark matter detectors, far infrared optical modulators, micro-bolometric detectors, low-dissipation ballistic transporters, terahertz-based qubits, terahertz polarization state controls, passive magnetic field sensors, stable topological superconductors that host Majorana fermions, and qubits topologically protected against decoherence. In this perspective article, the definition of these quantum anomalies is laid out, how little is known in the context of condensed matter, and how quantum anomalies are predicted to manifest as anomalous electronic, thermal, and magnetic behavior in experiments on topological quantum materials, including Weyl and Dirac semimetals. Furthermore, the importance that mechanical strain and defects will play in modifying signatures of quantum anomalies is discussed.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400189","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaAs Growth on Ge-Buffered Discontinuous (111)-Faceted V-Groove Silicon Substrates 锗缓冲不连续（111）面v型槽硅衬底上的砷化镓生长

IF 2.8

Advanced Physics Research Pub Date : 2025-05-19 DOI: 10.1002/apxr.202500026

Makhayeni Mtunzi, Hui Jia, Mateus G. Masteghin, Yaonan Hou, Haotian Zeng, Huiwen Deng, Jae-Seong Park, Chong Chen, Jun Li, Xingzhao Yan, Ilias Skandalos, Frederic Gardes, Mingchu Tang, Alwyn Seeds, Huiyun Liu

{"title":"GaAs Growth on Ge-Buffered Discontinuous (111)-Faceted V-Groove Silicon Substrates","authors":"Makhayeni Mtunzi, Hui Jia, Mateus G. Masteghin, Yaonan Hou, Haotian Zeng, Huiwen Deng, Jae-Seong Park, Chong Chen, Jun Li, Xingzhao Yan, Ilias Skandalos, Frederic Gardes, Mingchu Tang, Alwyn Seeds, Huiyun Liu","doi":"10.1002/apxr.202500026","DOIUrl":"10.1002/apxr.202500026","url":null,"abstract":"The propagation of antiphase boundaries (APBs) and threading dislocations (TDs) poses a significant impediment to the realisation of high-quality group III–V semiconductors grown on group IV platforms. The complete annihilation of APBs and a substantial reduction in threading dislocation density (TDD) are essential for achieving high-efficiency III–V devices compatible with complementary metal-oxide semiconductor (CMOS) technology. In this study, a novel growth technique is proposed and developed to fabricate a faceted germanium (Ge) buffer on a discontinuous (111)-faceted V-groove silicon (Si) substrate with a 500 nm flat ridge width. Subsequently, a GaAs buffer is grown on the Ge/V-groove Si virtual substrate using a ramped temperature growth process to minimise the prevalence of line and planar defects in the buffer structure. An APB-free GaAs buffer is successfully achieved, as confirmed by cross-sectional and plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses. The faceted Ge buffer layer obtained through this innovative approach alleviates the stringent fabrication requirements and intricate processing typically associated with conventional continuous V-groove Si substrates. This advancement facilitates the development of photonic integrated circuits by providing a simplified and efficient alternative substrate solution.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145058091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quasi-Resonant Tunneling Transport in Magnetic CrBr3 磁性CrBr3的准共振隧道输运

IF 2.8

Advanced Physics Research Pub Date : 2025-05-12 DOI: 10.1002/apxr.202400177

Gen Long, Peiheng Jiang, Zishu Zhou, Meizhen Huang, Binglan Wu, Zhicheng Zhong, Sunan Ding, Ning Wang, Guangyu Zhang

{"title":"Quasi-Resonant Tunneling Transport in Magnetic CrBr3","authors":"Gen Long, Peiheng Jiang, Zishu Zhou, Meizhen Huang, Binglan Wu, Zhicheng Zhong, Sunan Ding, Ning Wang, Guangyu Zhang","doi":"10.1002/apxr.202400177","DOIUrl":"10.1002/apxr.202400177","url":null,"abstract":"Tunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler-Nordheim model describes tunneling in bulk materials through bias-induced triangular potentials, van der Waals layered systems require special consideration of interlayer gaps. The fundamental mechanisms of tunneling processes in van der Waals magnetic materials are delved into, with a specific emphasis on CrBr3. Layer-resolved quasi-resonant tunneling (QRT) mediated by ladder-shaped barriers is revealed. QRT occurs because the outermost CrBr3 conduction band aligns with the Fermi level of the tunneling electrode under the bias voltage tilting, resulting in an increased tunneling probability and enhanced current. Two competing mechanisms driven by the magnetic field—the suppression of spin fluctuations leading to negative tunneling magnetoresistance (TMR) and the spin-flip-induced elevation of the conduction band energy causing positive TMR—are identified to explain the diverse behaviors of tunneling magnetoresistance under different bias voltages and temperatures. The work establishes van der Waals heterostructures as distinct tunneling systems differing fundamentally from conventional bulk barriers, while introducing the QRT concept as a critical advancement in understanding electronic tunneling in layered materials.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400177","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Showcasing the Structure and Properties of Lanthanide-Doped BaTiO3 镧系掺杂BaTiO3的结构与性能研究

IF 2.8

Advanced Physics Research Pub Date : 2025-05-12 DOI: 10.1002/apxr.202500006

Takeshi Nakagawa, Melita Menelaou, Martina Vrankić

{"title":"Showcasing the Structure and Properties of Lanthanide-Doped BaTiO3","authors":"Takeshi Nakagawa, Melita Menelaou, Martina Vrankić","doi":"10.1002/apxr.202500006","DOIUrl":"10.1002/apxr.202500006","url":null,"abstract":"Two-dimensional (2D) ferroelectrics, especially lead-free materials such as barium titanate, BaTiO3, hold significant promise for advanced electronics due to their unique nanoscale properties. Doping BaTiO3 with lanthanides (Ln) can enable fine-tuning of electrical and dielectric properties by substituting Ba2⁺ (A-site) or Ti⁴⁺ (B-site) in the perovskite structure. A-site doping enhances dielectric properties, while doping the B-site changes the polarization and thermal stability. The site preference depends on the ionic radii and charge compensation mechanisms, which include oxygen vacancies and self-compensation processes. This research delivers the structural and microstructural aspects of BaTiO3 doped with members of the Ln family from La to Lu, emphasizing their superior properties compared to undoped BaTiO3. Notably, the Ln dopants significantly influence the ferroelectric, ferromagnetic, luminescent, and piezocatalytic properties, where the ionic radius, doping mechanisms, defect formation, and preparation methods play a role. Theoretical studies and advanced characterization data indicate that Ln dopants improve the performance of BaTiO3 by stabilizing structural defects, affecting site occupancy, and improving insulation resistance. Understanding the defect chemistry and Ln ion distribution in Ln-doped BaTiO3 systems can help optimize their functional properties for next-generation technologies and sustainable energy applications.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500006","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145058095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric Control of Anisotropic Magnetoresistance in Ultrathin Sr2IrO4 Films toward 2D Metallic Limit 超薄Sr2IrO4薄膜各向异性磁阻的铁电控制

IF 2.8

Advanced Physics Research Pub Date : 2025-05-12 DOI: 10.1002/apxr.202400208

Yuanyuan Zhang, Qiuchen Wu, Yifei Hao, Xia Hong

{"title":"Ferroelectric Control of Anisotropic Magnetoresistance in Ultrathin Sr2IrO4 Films toward 2D Metallic Limit","authors":"Yuanyuan Zhang, Qiuchen Wu, Yifei Hao, Xia Hong","doi":"10.1002/apxr.202400208","DOIUrl":"10.1002/apxr.202400208","url":null,"abstract":"The Ruddlesden-Popper 5d iridate Sr2IrO4 is an antiferromagnetic Mott insulator with the electronic, magnetic, and structural properties highly intertwined. Voltage control of its magnetic state is of intense fundmenatal and technological interest but remains to be demonstrated. Here, the tuning of magnetotransport properties in 5.2 nm Sr2IrO4 via interfacial ferroelectric PbZr0.2Ti0.8O3 is reported. The conductance of the epitaxial PbZr0.2Ti0.8O3/Sr2IrO4 heterostructure exhibits ln(T) behavior that is characteristic of 2D correlated metal, in sharp contrast to the thermally activated behavior followed by 3D variable range hopping observed in single-layer Sr2IrO4 films. Switching PbZr0.2Ti0.8O3 polarization induces nonvolatile, reversible resistance modulation in Sr2IrO4. At low temperatures, the in-plane magnetoresisance in the heterostructure transitions from positive to negative at high magnetic fields, opposite to the field dependence in single-layer Sr2IrO4. In the polarization down state, the out-of-plane anisotropic magnetoresistance RAMR exhibits sinusoidal angular dependence, with a 90° phase shift below 20 K. For the polarization up state, unusual multi-level resistance pinning appears in RAMR below 30 K, pointing to enhanced magnetocrystalline anisotropy. The work sheds new light on the intriguing interplay of interface lattice coupling, charge doping, magnetoelastic effect, and possible incipient ferromagnetism in Sr2IrO4, facilitating the functional design of its electronic and material properties.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400208","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Singular Electromagnetics: From Phase Singularities to Optical Skyrmions and Beyond (Adv. Phys. Res. 5/2025) 奇异电磁学：从相位奇点到光学奇点及以后（物理学博士）。研究》5/2025)

IF 2.8

Advanced Physics Research Pub Date : 2025-05-07 DOI: 10.1002/apxr.202570011

Jie Yang, Juanna Jiang, Jiafu Wang, Xuezhi Zheng

引用次数: 0

Issue Information (Adv. Phys. Res. 5/2025) 发行信息（物理广告）研究》5/2025)

IF 2.8

Advanced Physics Research Pub Date : 2025-05-07 DOI: 10.1002/apxr.202570012

引用次数: 0

Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature (Adv. Phys. Res. 5/2025) 室温下扭曲MoSe2均匀层中谷间Trions的电操纵（物理学报）。研究》5/2025)

IF 2.8

Advanced Physics Research Pub Date : 2025-05-07 DOI: 10.1002/apxr.202570013

Bárbara L. T. Rosa, Paulo E. Faria Junior, Alisson R. Cadore, Yuhui Yang, Aris Koulas-Simos, Chirag C. Palekar, Seth Ariel Tongay, Jaroslav Fabian, Stephan Reitzenstein

{"title":"Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature (Adv. Phys. Res. 5/2025)","authors":"Bárbara L. T. Rosa, Paulo E. Faria Junior, Alisson R. Cadore, Yuhui Yang, Aris Koulas-Simos, Chirag C. Palekar, Seth Ariel Tongay, Jaroslav Fabian, Stephan Reitzenstein","doi":"10.1002/apxr.202570013","DOIUrl":"10.1002/apxr.202570013","url":null,"abstract":"Electrical Control of Excitonic ComplexesThe cover feature showcases the exploration of exciton complexes in electrically contacted artificially twisted MoSe2 homobilayers, highlighting their unique optical and electronic properties. Unlike conventional heterobilayers, homobilayers benefit from the absence of lattice mismatch, enhancing their potential for practical applications. In article number 2400135, Bárbara L. T. Rosa, Stephan Reitzenstein and colleagues unveil the tunable excitonic behavior of these systems through electrical charge carrier concentration control at room temperature. By performing gate-dependent photoluminescence experiments on devices with various twist angles, they demonstrate a twist-angle-dependent doping effect that significantly influences the neutral and negatively charged intralayer excitons. The findings substantially advance the understanding of TMD homobilayers by enabling control over their emission properties, laying a strong foundation for future applications in van der Waals semiconductor devices.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture>\u0000 </div>\u0000 </figure>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202570013","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface Acoustic Wave Manipulation of Magnetic Skyrmions for Tunable Nanoscale Oscillators 用于可调谐纳米级振荡器的磁谐振子的表面声波操纵

IF 2.8

Advanced Physics Research Pub Date : 2025-05-06 DOI: 10.1002/apxr.202400206

Yang Yang, Chenye Zhang, Yahui Ji, Jinxing Zhang, Tianxiang Nan

引用次数: 0