Advanced Physics Research最新文献_第5页

Polarization-Dependent Calibration of Nitrogen-Vacancy Axes for Precise Three-Dimensional Magnetic Field Vector Determination 用于精确三维磁场矢量测定的氮空位轴极化相关校准

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-06-12 DOI: 10.1002/apxr.202500138

Ji Guo, Ziyan Li, Sitong Ding, Xiangyu Kang, Xiumin Gao

引用次数: 0

Emergent Spin Hall Quantization and High-Order van Hove singularities in Square-Octagonal MA2Z4 方形八角形MA2Z4中的自旋霍尔量子化和高阶van Hove奇点

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-04 DOI: 10.1002/apxr.202500213

Rahul Verma, Yash Vardhan, Hsin Lin, Bahadur Singh

{"title":"Emergent Spin Hall Quantization and High-Order van Hove singularities in Square-Octagonal MA2Z4","authors":"Rahul Verma, Yash Vardhan, Hsin Lin, Bahadur Singh","doi":"10.1002/apxr.202500213","DOIUrl":"https://doi.org/10.1002/apxr.202500213","url":null,"abstract":"Quantum spin Hall (QSH) insulators are versatile platforms for exploring exotic quantum phases, especially when combined with high-order van Hove singularities (VHSs) that enhance electron correlations. However, perfect spin Hall quantization is often hindered by spin mixing from strong spin-orbit coupling, and the emergence of such VHSs is sensitive to material-specific electronic structures. Here, we predict a class of seven-layered square-octagonal <math></math> (M = Mo/W, A = Si/Ge, Z = Pnictogen) isomers that host a large-gap QSH phase with nearly quantized spin Hall conductivity and intrinsic high-order VHSs. Topological and symmetry analyses reveal that compounds with Z = P, As, and Sb are <math></math> nontrivial with spin Chern number <math></math> and support <math></math>-polarized edge states, while those with Z = N are trivial insulators. The QSH phase features an <math></math>-conserving spin Hamiltonian consistent with an emergent spin <math></math> quasi-symmetry, yielding spin Hall conductivity <math></math>. Notably, <math></math>(As, Sb)<math></math> compounds exhibit quasi-flat bands near the Fermi level in the inverted regime, with <math></math> additionally hosting four high-order VHSs at generic momentum points. These results position square-octagonal <math></math> materials as robust QSH insulators for realizing quantized spin Hall conductivity and correlated topological phases, including fractionalized states and possibly non-Abelian anyons.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500213","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148532869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Material-Driven Neuronal Oscillators and Filters via Active Reactance in CC-NDR and VC-NDR Electro-Thermal Memristors 材料驱动神经元振荡器和滤波器通过有源电抗在CC-NDR和VC-NDR电热记忆电阻器

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-21 DOI: 10.1002/apxr.70138

Fatme Jardali, Gwyneth Svatek, R. Stanley Williams, Timothy D. Brown, Patrick J. Shamberger

{"title":"Material-Driven Neuronal Oscillators and Filters via Active Reactance in CC-NDR and VC-NDR Electro-Thermal Memristors","authors":"Fatme Jardali, Gwyneth Svatek, R. Stanley Williams, Timothy D. Brown, Patrick J. Shamberger","doi":"10.1002/apxr.70138","DOIUrl":"https://doi.org/10.1002/apxr.70138","url":null,"abstract":"The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor-based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi-transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro-thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics-based compact modeling framework, we bridge negative differential resistance (NDR) and bias-tunable reactance, which underlies spiking dynamics in electro-thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current-controlled (CC-) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage-controlled (VC-) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La0.7Ca0.3MnO3 as a representative VC-NDR material and comparing it with LaCoO3 manifesting CC-NDR, we explain the physical origins of their distinct current-voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro-thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70138","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148534028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface Charges Guided Quasi-TEM-mode Microwave Propagation along Dielectric Nanowire 表面电荷引导准tem模式微波沿介质纳米线传播

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-25 DOI: 10.1002/apxr.202500230

BoYan Xu, Kaibo Zhang, Haojie Gao, Zhiyuan Gao, Kai Wang, Lihuan Zhao, Qi Yang, Bifeng Cui

{"title":"Surface Charges Guided Quasi-TEM-mode Microwave Propagation along Dielectric Nanowire","authors":"BoYan Xu, Kaibo Zhang, Haojie Gao, Zhiyuan Gao, Kai Wang, Lihuan Zhao, Qi Yang, Bifeng Cui","doi":"10.1002/apxr.202500230","DOIUrl":"https://doi.org/10.1002/apxr.202500230","url":null,"abstract":"According to Maxwell's equations, it is generally believed that a single-conductor transmission line cannot allow TEM-mode electromagnetic wave propagation. This is based upon the assumption that dielectric material is isolated from the environment. Here we have demonstrated both experimentally and theoretically that when the surface bound electrostatic charges of a dielectric nanowire (NW) is in function, a single-conductor transmission line with dielectric NW as the signal line could guide quasi-TEM electromagnetic waves. It is proposed that the surface electrostatic charges of ZnO NWs would respond rapidly to the external electric field in the direction normal to the surface through displacement polarization, thereby maintaining a zero electric field inside NW and inducing an effective variation in boundary shapes transversely. In the direction parallel to the surface, the outermost bound negative charges constitute a like-charge thin-layer system. Due to the in-plane translational symmetry of this system, its interaction with electromagnetic waves satisfies quasi-momentum conservation, allowing the Lorentz-force-induced momentum to be transferred longitudinally among the like-charges. This process gives rise to a displacement current that sustains the magnetic field at the surface, enabling quasi-TEM-mode microwave guidance.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500230","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148534439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoscale Thermal Transport in Bi2(Te, Se)3 Thermoelectric Material Using Pulsed STEM 脉冲STEM技术在Bi2(Te, Se)3热电材料中的纳米尺度热输运

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-25 DOI: 10.1002/apxr.202600004

Hyunyong Cho, Hieu Duy Nguyen, Isamu Yamada, Koji Kimoto, Takao Mori, Naoyuki Kawamoto

{"title":"Nanoscale Thermal Transport in Bi2(Te, Se)3 Thermoelectric Material Using Pulsed STEM","authors":"Hyunyong Cho, Hieu Duy Nguyen, Isamu Yamada, Koji Kimoto, Takao Mori, Naoyuki Kawamoto","doi":"10.1002/apxr.202600004","DOIUrl":"https://doi.org/10.1002/apxr.202600004","url":null,"abstract":"Understanding thermal transport properties at the nanoscale can provide strategies for efficiently managing heat or improving energy conversion efficiency in various applications. Furthermore, when thermal paths can be traced and imaged at the nanoscale, materials or electronic devices can be designed to minimize heat loss. The demand for these technologies continues to grow rapidly. Here, we demonstrate imaging of thermal propagation in thermoelectric material (Bi2(Te, Se)3) using a spatially resolved technique that uses thermal waves induced by a pulsed convergent electron beam in a scanning transmission electron microscopy (STEM) mode at room temperature. The measurements with nanoscale clearly reveal the anisotropy inherent in Bi2(Te, Se)3 by quantifying the relative values of phase delay at each irradiated position. Also, the thermal wave propagation is significantly sensitive to the directions of the media, as if the heat carriers lose their memory of the vibration mode in each direction and switch to a new mode. Capturing various thermal properties, such as directional thermal pathways, from nanoscale imaging can provide a deeper understanding of how materials affect heat transport. This insight plays a vital role in designing materials for thermal management and energy conversion devices.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202600004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148534438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Advances in Stimulated Brillouin Scattering in Integrated Photonics 集成光子学中受激布里渊散射研究进展

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-04-30 DOI: 10.1002/apxr.70133

Songyue Liu, Qi Lu, Pan Hu, Yuan Zhong, Yu He, Yaojing Zhang, Young-Ik Sohn, Yikai Su, Lu Sun

{"title":"Recent Advances in Stimulated Brillouin Scattering in Integrated Photonics","authors":"Songyue Liu, Qi Lu, Pan Hu, Yuan Zhong, Yu He, Yaojing Zhang, Young-Ik Sohn, Yikai Su, Lu Sun","doi":"10.1002/apxr.70133","DOIUrl":"https://doi.org/10.1002/apxr.70133","url":null,"abstract":"On-chip stimulated Brillouin scattering (SBS) technology has garnered attention in the field of integrated photonics due to its unique acousto–optic coupling characteristics and potential for all-optical signal processing systems. By leveraging efficient Brillouin acousto–optic interactions, a variety of high-performance on-chip SBS-based devices have been successfully demonstrated, including narrow-linewidth lasers, low-noise amplifiers, high-precision gyroscopes, tunable filters, and optical isolators. In this review, we first summarize the physical mechanisms of SBS and the key methods for calculating gain characteristics on integrated optical platforms. We then discuss the implementation schemes of the Brillouin effect in different material platforms, along with their emerging applications in optical communications, quantum information, and other fields. Finally, we outline the current technological challenges and prospective research, which may provide insights into the design of next-generation integrated acousto–optic devices.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70133","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148522898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spectral Response Modelling of Multilayer Graphene/Quantum Dot Heterostructures 多层石墨烯/量子点异质结构的光谱响应模型

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-05-11 DOI: 10.1002/apxr.70140

Ju Ying Shang, Seungbae Ahn, Oscar Vazquez Mena

{"title":"Spectral Response Modelling of Multilayer Graphene/Quantum Dot Heterostructures","authors":"Ju Ying Shang, Seungbae Ahn, Oscar Vazquez Mena","doi":"10.1002/apxr.70140","DOIUrl":"https://doi.org/10.1002/apxr.70140","url":null,"abstract":"Multispectral photodetection is crucial for many optoelectronic applications, such as telecommunication and biomedical imaging. A multilayer heterostructure device with multiple layers of graphene (Gr) and photosensitizers of different bandgaps (e.g., Quantum Dots (QDs)) can be used for multispectral photodetection with a reduced device footprint. We demonstrate a spectral response model of multilayer Gr/QD heterostructure systems, simulating the photocurrents collected by each graphene layer with the illumination light source as the input. We observe matching trends in the photocurrent spectral response in both the experimental data and modelled data of single-junction Gr/QD devices with varying QD thicknesses and device configurations, suggesting our model fit well with experiment. In addition, our model simulates the spectral response of the double-junction multilayer Gr/QD heterostructure device with the layer sequence of Gr/ZnO/SiO2/PbS QDs/Gr. When compared to experimental data of the same device, our model captures the key photocurrent features, with the Gr/ZnO junction showing large photoresponse at UV wavelengths and the Gr/QDs junction showing photoresponse at a broad range of wavelengths, distinguishing photons in three spectral bands (500 nm or less, 500–1200 nm, and beyond 1200 nm). Our model demonstrates the potential to simulate the spectral response of a layered optoelectronic device, enabling device design and optimization.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.70140","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148533352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin Dynamics of Excitons and Carriers in Mixed-Cation MAxFA1–xPbI3 Perovskite Crystals: Alloy Fluctuations Probed by Optical Orientation 混合阳离子MAxFA1-xPbI3钙钛矿晶体中激子和载流子的自旋动力学：光学取向探测的合金波动

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-04-29 DOI: 10.1002/apxr.202500241

Boris F. Gribakin, Nataliia E. Kopteva, Dmitri R. Yakovlev, Ilya A. Akimov, Ina V. Kalitukha, Bekir Turedi, Maksym V. Kovalenko, Manfred Bayer

{"title":"Spin Dynamics of Excitons and Carriers in Mixed-Cation MAxFA1–xPbI3 Perovskite Crystals: Alloy Fluctuations Probed by Optical Orientation","authors":"Boris F. Gribakin, Nataliia E. Kopteva, Dmitri R. Yakovlev, Ilya A. Akimov, Ina V. Kalitukha, Bekir Turedi, Maksym V. Kovalenko, Manfred Bayer","doi":"10.1002/apxr.202500241","DOIUrl":"https://doi.org/10.1002/apxr.202500241","url":null,"abstract":"Optical spin orientation measured by time-resolved photoluminescence provides a powerful tool to probe the spin dynamics of excitons and charge carriers in perovskite semiconductors. The impact of alloy fluctuations on the spin dynamics of mixed-cation <math></math> perovskite single crystals is studied here experimentally. The optical orientation is measured under nonresonant excitation for crystals with <math></math>, 0.4, and 0.8 at cryogenic temperatures and compared with data on <math></math> crystals. The high degree of exciton optical orientation of <math></math>% for <math></math> and 0.8 reduces to about 60% for <math></math>. A similar trend is observed for the optical orientation of carrier spins. This behavior is attributed to enhanced scattering of free excitons and carriers in the alloys with increased compositional and structural disorder. The optical orientation remains robust for excitation detunings up to 0.3 eV, indicating the absence of the Dyakonov–Perel spin relaxation mechanism. From the Larmor spin precession measured from spin dynamics in an external magnetic field applied in Voigt geometry, the electron and hole <math></math>-factors are evaluated. Their dependence on the bandgap energy in <math></math> crystals follows the universal trend previously established for lead halide perovskites.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500241","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148522928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Squeezed-Vacuum Bosonic Codes 压缩真空玻色子密码

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 Epub Date: 2026-06-16 DOI: 10.1002/apxr.202600007

Nir Gutman, Eliya Blumenthal, Shay Hacohen-Gourgy, Ariel Orda, Ido Kaminer

{"title":"Squeezed-Vacuum Bosonic Codes","authors":"Nir Gutman, Eliya Blumenthal, Shay Hacohen-Gourgy, Ariel Orda, Ido Kaminer","doi":"10.1002/apxr.202600007","DOIUrl":"https://doi.org/10.1002/apxr.202600007","url":null,"abstract":"We introduce a family of bosonic quantum error-correcting codes built as a rotation-symmetric superposition of squeezed vacuum states, which promise protection against both loss and dephasing noise channels. The robustness of these “squeezed-vacuum codes” arises from being arranged at evenly spaced angles in phase-space, and simultaneously in evenly spaced photon-number support <math></math>. We present simple preparation circuits for general “<math></math>-legged” codewords using sequences of conditional rotations. The performance of these codes is evaluated against loss and dephasing noises using the Knill–Laflamme violation function and benchmarked against cat codes, binomial codes, and finite-energy GKP codes. As the number <math></math> of squeezed-vacuum states in a code increases, the code exhibits improved loss tolerance at the cost of higher dephasing sensitivity. We outline implementations in circuit QED and trapped-ion platforms, where high-fidelity Gaussian operations and conditional controls are available or under active development. These results help establish squeezed-vacuum codes as practical, hardware-compatible, members of the bosonic codes class.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"5 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202600007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148533196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Squeezed-Vacuum Bosonic Codes (Adv. Phys. Res. 7/2026) 压缩真空玻色子密码（物理学版）研究》7/2026)

IF 2.8

Advanced Physics Research Pub Date : 2026-07-15 DOI: 10.1002/apxr.70159

Nir Gutman, Eliya Blumenthal, Shay Hacohen-Gourgy, Ariel Orda, Ido Kaminer

引用次数: 0