Advanced Physics Research最新文献_第6页

Advanced Nanoscale Functionalities for Water and Energy Technologies 水和能源技术的先进纳米功能

IF 2.8

Advanced Physics Research Pub Date : 2025-03-24 DOI: 10.1002/apxr.202400195

Zhi Xu, Nan Wu, Soufiane Abdelghani-Idrissi, Corentin Trégouët, Javier Perez-Carvajal, Annie Colin, Ming Ma, Antoine Niguès, Alessandro Siria

{"title":"Advanced Nanoscale Functionalities for Water and Energy Technologies","authors":"Zhi Xu, Nan Wu, Soufiane Abdelghani-Idrissi, Corentin Trégouët, Javier Perez-Carvajal, Annie Colin, Ming Ma, Antoine Niguès, Alessandro Siria","doi":"10.1002/apxr.202400195","DOIUrl":"10.1002/apxr.202400195","url":null,"abstract":"Nanofluidics, the study of fluid behaviors under nanoscale confinement, is driving transformative innovations in water and energy technologies. This rapidly evolving field leverages unique physical and chemical phenomena such as enhanced ion transport and tunable fluid interactions, enabling breakthrough advancements in critical applications. This review provides a comprehensive overview of theoretical frameworks and technological innovations facilitated by nanofluidics, highlighting its implications across diverse domains. Key applications include water treatment and desalination, where advanced nanostructured materials enable superior selectivity and efficiency in molecular and ionic separations. The principles of nanofluidics also offer new pathways for renewable energy generation, including harvesting osmotic energy and optimizing energy storage systems. Additionally, the integration of nanofluidics into carbon dioxide capture and utilization processes has opened new horizons for addressing climate change by enhancing reaction efficiencies and facilitating sustainable resource cycles. By bridging fundamental nanoscale science with innovative applications, nanofluidics presents a transformative approach for addressing global challenges in water security, sustainable energy, and environmental management. The review concludes by discussing scaling challenges, interdisciplinary opportunities, and the promising future directions of nanofluidic technologies for sustainable development.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400195","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness 通过减小矫顽力场和薄膜厚度来降低铁电铪合金工作电压的策略

IF 2.8

Advanced Physics Research Pub Date : 2025-03-24 DOI: 10.1002/apxr.202400194

Dong In Han, Hyojun Choi, Dong Hyun Lee, Se Hyun Kim, Jaewook Lee, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Min Hyuk Park

{"title":"Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness","authors":"Dong In Han, Hyojun Choi, Dong Hyun Lee, Se Hyun Kim, Jaewook Lee, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Min Hyuk Park","doi":"10.1002/apxr.202400194","DOIUrl":"10.1002/apxr.202400194","url":null,"abstract":"As the AI era advances, there has been increasing interest in the next-generation memory capable of low-power operation as well as high performance. HfO₂-based ferroelectric random-access memory (FeRAM) has been extensively studied for its simple structure similar to that of dynamic random-access memory (DRAM) and high power efficiency. However, due to the limited endurance of HfO2 and the high coercive field (Ec) arising from its high energy barrier for polarization switching, the commercialization of the low-power FeRAM faces several challenges. To address these issues, this perspective reviews current scientific approaches and experimental advances aimed at achieving low voltage switching in ferroelectric HfO2 thin films by reducing either Ec or film thickness. Key strategies including controlling types and number of dopants in HfO2, decreasing free energy of the intermediate tetragonal phase, achieving metal-excess rhombohedral phase, controlling oxygen vacancy concentration, and enhancing domain wall motion are reviewed based on theory as well as experimental demonstrations. Especially, recent progress in achieving low voltage operation in ferroelectric HfO2 capacitors via sub-5 nm thickness scaling are highlighted. Overall, the importance of precise material and process control to overcome current technical limitations in device scalability and reliability is emphasized, casting an optimistic outlook on the future of ferroelectric memory technology.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400194","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensing Pico-Newton Plasmonic Forces and Jerks of LSPR Biochips Using Simple UV-Visible Spectroscopy 利用简单紫外可见光谱学检测LSPR生物芯片的皮牛顿等离子体力和激振

IF 2.8

Advanced Physics Research Pub Date : 2025-03-22 DOI: 10.1002/apxr.202400205

Nikhil Bhalla

{"title":"Sensing Pico-Newton Plasmonic Forces and Jerks of LSPR Biochips Using Simple UV-Visible Spectroscopy","authors":"Nikhil Bhalla","doi":"10.1002/apxr.202400205","DOIUrl":"10.1002/apxr.202400205","url":null,"abstract":"Localized surface plasmon resonances (LSPRs) involve the oscillation of free electrons, leading to the maximum absorption of light by nanostructures at a specific wavelength. This absorption generates an action force exerted by the light on the nanostructures, with a corresponding reaction force—equal in magnitude but opposite in direction—arising from the plasmonic resonances. Additionally, the optical force exerted by light on nanostructures results in jerks or changes in its reaction force over time as it interacts with light. Through mathematical modeling, the reaction forces and jerks on large-area LSPR chips are determined using basic absorbance and reflection measurements performed with UV-Visible spectroscopy on gold nanomushrooms. The system tested, immunoglobulin G (IgG) antibody and its complementary antibody complex, revealed forces of 6 and 6.26 pN respectively. These main findings and especially the equations for reaction force and jerk, enhance our understanding of absorbance and reflection spectra obtained from UV-Visible spectroscopy. The developed model can be applied to analyze light-induced forces experienced by micro/nano/bio material systems using simple UV-Visible spectroscopy techniques.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400205","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Controlling the Crystallization Kinetics of Low Loss Phase Change Material Sb2S3 控制低损耗相变材料Sb2S3的结晶动力学

IF 2.8

Advanced Physics Research Pub Date : 2025-03-20 DOI: 10.1002/apxr.202500005

Felix Hoff, Julian Pries, Jan Köttgen, Pierre Lucas, Matthias Wuttig

{"title":"Controlling the Crystallization Kinetics of Low Loss Phase Change Material Sb2S3","authors":"Felix Hoff, Julian Pries, Jan Köttgen, Pierre Lucas, Matthias Wuttig","doi":"10.1002/apxr.202500005","DOIUrl":"10.1002/apxr.202500005","url":null,"abstract":"Optoelectronics are crucial for developing energy-efficient chip technology, with phase-change materials (PCMs) emerging as promising candidates for reconfigurable components in photonic integrated circuits, such as nonvolatile phase shifters. Antimony sulfide (Sb2S3) stands out due to its low optical loss and considerable phase-shifting properties, along with the non-volatility of both phases. This study demonstrates that the crystallization kinetics of Sb2S3 can be switched from growth-driven to nucleation-driven by altering the sample dimension from bulk to film. This tuning of the crystallization process is critical for optical switching applications requiring control over partial crystallization. Calorimetric measurements with heating rates spanning over six orders of magnitude, reveal that, unlike conventional PCMs that crystallize below the glass transition, Sb2S3 exhibits a measurable glass transition prior to crystallization from the undercooled liquid (UCL) phase. The investigation of isothermal crystallization kinetics provides insights into nucleation rates and crystal growth velocities while confirming the shift to nucleation-driven behavior at reduced film thicknesses—an essential aspect for effective device engineering. A fundamental difference in chemical bonding mechanisms was identified between Sb2S3, which exhibits covalent bonding in both material phases, and other PCMs, such as GeTe and Ge2Sb2Te5, which demonstrate pronounced bonding alterations upon crystallization.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 9","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polymeric Memristors as Entropy Sources for Probabilistic Bit Generation 聚合忆阻器作为概率位生成的熵源

IF 2.8

Advanced Physics Research Pub Date : 2025-03-20 DOI: 10.1002/apxr.202400142

Stephen H. Foulger, Yuriy Bandera, Igor Luzinov, Travis Wanless

{"title":"Polymeric Memristors as Entropy Sources for Probabilistic Bit Generation","authors":"Stephen H. Foulger, Yuriy Bandera, Igor Luzinov, Travis Wanless","doi":"10.1002/apxr.202400142","DOIUrl":"10.1002/apxr.202400142","url":null,"abstract":"Probabilistic bits, or p-bits, represent a novel computational element that bridges the gap between deterministic classical bits and quantum bits (qubits) used in quantum computing. Unlike classical bits that maintain a definite state of 0 or 1, a p-bit fluctuates between these states in a controlled, stochastic manner. This probabilistic behavior allows for the representation and processing of information in a form that leverages inherent randomness. In this study, a unique approach is presented to generating p-bits using a hybrid conjugated polymer, poly-4-((6-(4H-dithieno[3,2-b:2',3'-d]pyrrol-4-yl)hexyl)oxy)-N,N-diphenylaniline (pTPADTP), as a memristive material. The polymer's conjugated backbone, combined with pendant triphenylamine groups, enables the creation of p-bits through random resistance switching. The stochasticity of this polymeric memristor makes it particularly suited for p-bit applications in stochastic optimization, probabilistic algorithms, and artificial neural networks. The charge transport in the polymer is facilitated by two synergistic percolation mechanisms: one occurring along the polymer backbone and the other through the pendant triphenylamine groups. The study of p-bits generated from pTPADTP opens new avenues for advancing both the theory and practice of computation, where uncertainty and randomness are harnessed as valuable computational resources.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400142","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143818820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulse-Level Quantum Robust Control with Diffusion-Based Reinforcement Learning 基于扩散强化学习的脉冲级量子鲁棒控制

IF 2.8

Advanced Physics Research Pub Date : 2025-03-19 DOI: 10.1002/apxr.202400159

Yuanjing Zhang, Tao Shang, Chenyi Zhang, Xueyi Guo

{"title":"Pulse-Level Quantum Robust Control with Diffusion-Based Reinforcement Learning","authors":"Yuanjing Zhang, Tao Shang, Chenyi Zhang, Xueyi Guo","doi":"10.1002/apxr.202400159","DOIUrl":"10.1002/apxr.202400159","url":null,"abstract":"The pulse-level quantum control presents a large range of external parameter dependencies, including control field noise, frequency detuning, nonlinearities, and uncertainty of Hamiltonian parameters, which can lead to significant deviation from the target quantum gate. These terms are not usually considered directly in standard optimization scenarios for robustness, but are often found in analytical solutions. The latter are often difficult to emerge and generalize to different settings. This paper proposes a diffusion-based reinforcement learning method for pulse-level quantum robust control (PQC-DBRL) to enhance the robustness of pulse-level quantum gate control. PQC-DBRL does not require an accurate Hamiltonian model of the underlying system, effectively mitigating deviations from target quantum gates caused by control field noise and parameter uncertainties. The quantum pulse control problem is formulated as a conditional generative modeling task, leveraging diffusion reinforcement learning to capture unobserved system information. Furthermore, the results show that PQC-DBRL pulses maintain a fidelity greater than 0.95 for 100% of the cases and greater than 0.999 for 32.16% of the cases, outperforming GRAPE, which achieves 0.999 fidelity for only 12.48% of the cases under the same noise conditions. In large-scale experiments with repeated gate operations, PQC-DBRL demonstrates significantly higher resilience to cumulative errors, maintaining fidelity advantages even after 200 gate repetitions. Additionally, when evaluated across different Hamiltonian variations, PQC-DBRL shows smaller fidelity variance compared to GRAPE, indicating higher robustness against system parameter fluctuations. This paper offers a promising solution to scalable, noise-resilient quantum control in practical quantum computing applications.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400159","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topological Phase Transitions, Phase Diagrams, and Dielectric Properties of Pb(Zr0.7Ti0.3)O3-Based Superlattices Pb(Zr0.7Ti0.3) o3基超晶格的拓扑相变、相图和介电性能

IF 2.8

Advanced Physics Research Pub Date : 2025-03-17 DOI: 10.1002/apxr.202500004

Zhouping Chen, Yuhui Huang, Yongjun Wu, Juan Li, Zijian Hong

{"title":"Topological Phase Transitions, Phase Diagrams, and Dielectric Properties of Pb(Zr0.7Ti0.3)O3-Based Superlattices","authors":"Zhouping Chen, Yuhui Huang, Yongjun Wu, Juan Li, Zijian Hong","doi":"10.1002/apxr.202500004","DOIUrl":"10.1002/apxr.202500004","url":null,"abstract":"Ferroelectric/paraelectric superlattices, created through the periodic stacking of their constituent materials, exhibit intricate phase diagrams that reveal a variety of polar topologies and properties not found in any of the individual components. In this study, the phase-field simulations are utilized to systematically calculate the phase diagrams of Zr-rich Pb(Zr, Ti)O3/SrTiO3 superlattices with varying periodicity, strain, and temperature. A rhombohedral-type labyrinth domain is observed, which is oriented along the [110] direction under relatively low compressive strain. Meanwhile, higher compressive strains lead to the formation of polar skyrmions with shorter periodicities. Notably, a high dielectric permittivity of 1700 is found at room temperature for the polar skyrmion phase with a periodicity of 6 when grown on a DyScO3 substrate, which is double the value for the skyrmion phase in a PbTiO3/SrTiO3 superlattice. Moreover, a phase transition from skyrmion, vortex/labyrinth states to a cubic phase at elevated temperatures is discovered, accompanied by a significant reduction in dielectric responses. It is hoped that the work will inspire further exploration into the design of intriguing polar topologies with superior properties.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 8","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202500004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144809291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D Nonlayered Materials for Transistor Application 用于晶体管的二维非层状材料

IF 2.8

Advanced Physics Research Pub Date : 2025-03-12 DOI: 10.1002/apxr.202400186

Yongqi Dai, Yunhai Xiong, Farhan Ahmad, Xiang Chen

{"title":"2D Nonlayered Materials for Transistor Application","authors":"Yongqi Dai, Yunhai Xiong, Farhan Ahmad, Xiang Chen","doi":"10.1002/apxr.202400186","DOIUrl":"10.1002/apxr.202400186","url":null,"abstract":"Over the past two decades since the discovery of graphene, there is significant interest in two-dimensional (2D) layered materials. However, nonlayered materials, which are far more abundant, remain underexplored. By shifting the focus to 2D nonlayered materials, the variety of 2D materials is not only expanded but also explores advanced technologies and uncovers potential new phenomena. In this paper, recent developments are reviewed in the controlled synthesis of 2D nonlayered materials using chemical vapor deposition (CVD) techniques and their applications in 2D electronics. Begin by categorizing the extensive array of nonlayered materials based on their chemical composition and crystal structure. Next, specialized CVD growth methods that are suitable for 2D nonlayered materials are discussed, enabling the controlled synthesis of high-quality specimens. The physical properties and internal structure of 2D nonlayered materials through spectroscopic studies and atomic scale characterization are then analyzed. Finally, the applications of these materials in transistors, highlighting their diverse uses and potential advantages are summarized. By consolidating these studies, the future applications of 2D nonlayered materials in transistors and proposing various research ideas and technical pathways for further development are envisioned. This review will serve as a valuable resource to guide the advancement of 2D nonlayered materials.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400186","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiple Open and Closed Nodal-Line Phonons in Solids with a 1 Space Group (Adv. Phys. Res. 3/2025) 具有1空间群的固体中的多个开闭节点线声子。研究》3/2025)

IF 2.8

Advanced Physics Research Pub Date : 2025-03-10 DOI: 10.1002/apxr.202570006

Xiaotian Wang, Tingting Sun, Chengwu Xie, Hongkuan Yuan, Yang Tie, Zeying Zhang, Gang Zhang

引用次数: 0

Issue Information (Adv. Phys. Res. 3/2025) 发行信息（物理广告）研究》3/2025)

IF 2.8

Advanced Physics Research Pub Date : 2025-03-10 DOI: 10.1002/apxr.202570007

引用次数: 0