Electrical Manipulation of Intervalley Trions in Twisted MoSe2 Homobilayers at Room Temperature (Adv. Phys. Res. 5/2025)

Abstract

Electrical Control of Excitonic Complexes

The cover feature showcases the exploration of exciton complexes in electrically contacted artificially twisted MoSe₂ homobilayers, highlighting their unique optical and electronic properties. Unlike conventional heterobilayers, homobilayers benefit from the absence of lattice mismatch, enhancing their potential for practical applications. In article number 2400135, Bárbara L. T. Rosa, Stephan Reitzenstein and colleagues unveil the tunable excitonic behavior of these systems through electrical charge carrier concentration control at room temperature. By performing gate-dependent photoluminescence experiments on devices with various twist angles, they demonstrate a twist-angle-dependent doping effect that significantly influences the neutral and negatively charged intralayer excitons. The findings substantially advance the understanding of TMD homobilayers by enabling control over their emission properties, laying a strong foundation for future applications in van der Waals semiconductor devices.