{"title":"Design of the SISL Waveguide Filter With Co-Designed Magnetic-Coupled SISL Resonators Using Hybrid SISL and AF-SIW Technologies","authors":"Yun He;Kaixue Ma","doi":"10.1109/LMWT.2025.3539694","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3539694","url":null,"abstract":"This letter presents the design and implementation of a new class of substrate-integrated suspended line (SISL)-based waveguide filters (SISLWFs) based on the magnetic-coupled SISL resonators (MCRs). Cavity resonators excited by the SISL via are utilized to design the passband while the <inline-formula> <tex-math>$0.5~lambda _{g}$ </tex-math></inline-formula> SISL shorted stub line (SISLSS) resonator printed on G5 layer is directly connected to the SISL via to generate transmission zeros (TZs). A magnetic-coupled <inline-formula> <tex-math>$0.5~lambda _{g}$ </tex-math></inline-formula> L-shaped short-ended resonator (LSR) is also printed on the G5 layer and arranged at the end of the SISLSS to generate a new TZ. By utilizing the novel short-ended MCR topology, more SISL resonators can be co-designed in the SISL cavity, thus, up to seven TZs can be generated and controlled simultaneously. The measured results coincide well with the simulated ones which validates the proposed MCR methods.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"424-427"},"PeriodicalIF":0.0,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes","authors":"Qiu-Xuan Li;Yang Li;Tao Liu;Ren-Pin Huang;Xia Zhu;Peng-Bo Liu;Xiao Wang;Zhi-Wei Chen;Jie You;Zhang-Cheng Liu;Jin-Ping Ao","doi":"10.1109/LMWT.2025.3538337","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3538337","url":null,"abstract":"Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (<inline-formula> <tex-math>$V_{mathrm {on}}$ </tex-math></inline-formula>) of 0.32 V, a cutoff frequency (<inline-formula> <tex-math>$f_{T}$ </tex-math></inline-formula>) of 139.47 GHz, a breakdown voltage (<inline-formula> <tex-math>$V_{text {b}}$ </tex-math></inline-formula>) of 30 V, and <inline-formula> <tex-math>$f_{T} times V_{text {b}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$V_{mathrm {on}}$ </tex-math></inline-formula> figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"444-447"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bhushan Ballav Pathak;Ramanand Sagar Sangam;Rakhesh Singh Kshetrimayum;Jiasheng Hong;Matthew A. Morgan
{"title":"Uniplanar Conformal Center-Split M-Unit Cell Based SSPP Broadband Bandpass Filter for B5G Radio Stripe Networks","authors":"Bhushan Ballav Pathak;Ramanand Sagar Sangam;Rakhesh Singh Kshetrimayum;Jiasheng Hong;Matthew A. Morgan","doi":"10.1109/LMWT.2025.3539017","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3539017","url":null,"abstract":"In this letter, a single-layer flexible broadband bandpass filter using spoof surface plasmon polariton (SSPP) is presented. The filter consists of center-split M-shaped unit cells arranged on either side of the central metal CPW line. In the proposed design, interdigital structures are placed in the arms of the unit cell to control the lower cutoff frequency, whereas the SSPP structures of unit cells can adjust the higher cutoff frequency. The filter has a height of <inline-formula> <tex-math>$0.002lambda _{g}$ </tex-math></inline-formula> and a volume of <inline-formula> <tex-math>$0.0052lambda _{g}^{3}$ </tex-math></inline-formula>, where <inline-formula> <tex-math>$lambda _{g}$ </tex-math></inline-formula> represents the guided wavelength at the operating bandwidth’s central frequency. The measured passband has a relative bandwidth of 59% with an insertion loss (IL) of 1.2 dB. The characteristics of the presented filter, such as low volume, flexibility, ultrathin profile, and wide bandwidth, make it an excellent contender for applications in beyond fifth-generation (5G) radio stripe networks (RSNs).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"392-395"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A High Selectivity and Steep Attenuation Integrated Passive Device On-Chip Filter With Semi-Lumped π-Type Topology and Cross-Coupling Technique","authors":"Hao-Ran Zhu;Wen-Tao Wang;Lv-Bo Ma;Tao Ni","doi":"10.1109/LMWT.2025.3538697","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3538697","url":null,"abstract":"In this letter, a high selectivity integrated passive device (IPD) on-chip bandpass filter with compact size is presented. The modified semi-lumped K inverter is utilized to generate two transmission zeros (TZs) at upper stopband. The semi-lumped <inline-formula> <tex-math>$pi $ </tex-math></inline-formula> type section is designed to achieve another two TZs at the lower stopband. Moreover, cross-coupling technology is also employed to introduce TZ, which can improve the frequency selectivity near the passband and the attenuation level at the stopband. A chip sample is fabricated with gallium arsenide processing with a size <inline-formula> <tex-math>$1.125times 0.565$ </tex-math></inline-formula> mm2. The measurement results show that the center frequency is 27 GHz, the fractional bandwidth is 39%, and the insertion loss (IL) is 1.73 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"400-403"},"PeriodicalIF":0.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator","authors":"Shuyang Zhang;Guoqing Dong;Yizhu Shen;Sanming Hu","doi":"10.1109/LMWT.2025.3535757","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3535757","url":null,"abstract":"An on-chip mode-switchable hybridized localized surface plasmon resonator (HLSPR) is proposed to realize a dual-mode voltage-controlled oscillator (VCO). Different from conventional localized surface plasmon resonator (LSPR) with limited available modes, the proposed HLSPR offers rich intrinsic resonate modes, which can enlarge the tuning ranges or frequency bands of the VCO. A switch is applied to the slit of the HLSPR to electrically control resonate modes and frequencies. Moreover, capacitors paralleled to the HLSPR can naturally avoid mode ambiguity. The HLSPR-based dual-mode VCO is prototyped in a 180-nm CMOS process. By integrating HLSPR with active circuits, the K-band VCO achieves a phase noise (PN) of -109.5 dBc/Hz @ 1-MHz offset.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"456-459"},"PeriodicalIF":0.0,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Cross-Coupling Matrix Reconfiguration Using the Levenberg–Marquardt Algorithm on Orthogonal Groups","authors":"Xiyuan Wang;Hai Ding;Yingjie Di","doi":"10.1109/LMWT.2025.3536502","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3536502","url":null,"abstract":"This letter introduces a Levenberg-Marquardt (LM) algorithm on the orthogonal group to reconfigure the coupling matrix (CM) for cross-coupled resonator filters of general topology. By leveraging the framework of Lie groups and the exponential map, we perform LM steps locally in the linear space of skew-symmetric matrices, the Lie algebra associated with the orthogonal group. In each LM step, we derive and explicitly formulate a regularized least-squares (LSs) problem in matrix-vector form, and then map the solution back to the orthogonal matrix to transform the CM toward the one with the desired structure. In addition, we integrate the proposed LM algorithm with homotopy optimization to enhance global convergence, particularly for lossy CM reconfiguration. The proposed algorithm demonstrates fast convergence and high accuracy, as evidenced by the results of filter synthesis and fabrication.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"380-383"},"PeriodicalIF":0.0,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3533799","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3533799","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10884631","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A DC Combining-Free Miniaturized Mirror-Like Rectenna System With Full-Wave Rectification for Robust Wireless Power Transfer in IoT at 2.45 GHz","authors":"Deepak Sood;Manoj Kumar;Jagpal Singh Ubhi","doi":"10.1109/LMWT.2025.3538629","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3538629","url":null,"abstract":"This letter presents a planar, fully integrated multisector mirror-like rectenna array designed for efficient microwave power transfer to charge the Internet of Things (IoT) sensor nodes wirelessly. The proposed system addresses limited power harvesting and dc combining challenges by directly integrating four radially arranged endfire rectifying antenna (EFRA) elements surrounding a centrally located bore-sight rectifying antenna (BSRA) element on both sides of the proposed system like a mirror without using dc combining networks. The proposed design facilitates direct conjugate matching of the system to reduce the insertion losses, enabling a compact and fully integrated design. This provides nearly 3-D coverage and makes it a good candidate for IoT applications. The mirror-like rectenna system (MLRS) system can harvest approximately 1400 mV of open dc voltage in any orientation and direction, sufficient to recharge and operate low-power IoT sensor nodes. The experimental setup further validated these results, demonstrating the system’s potential as a robust solution for wireless power transfer (WPT) in smart applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"448-451"},"PeriodicalIF":0.0,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wide Range and Accurate Displacement Measurement Technique Using FMCW Radar","authors":"Weitao Li;Yuyong Xiong;Sicheng Hong;Zhaoyu Liu;Zhike Peng","doi":"10.1109/LMWT.2025.3538483","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3538483","url":null,"abstract":"The displacement measurement technique based on FMCW radar has shown great application potential. However, the measurement range of the existing method is limited by the range resolution of radar. This letter proposes a phase compensation method to realize the wide range and accurate displacement measurement across multiple range bins. It works by demodulating the baseband signal by using the estimated distance of the target at different times to eliminate the additional phase modulation caused by the target crossing the range bins. Simulation and experiments demonstrate that the proposed method can accurately extract the wide-range displacement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"492-495"},"PeriodicalIF":0.0,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}