{"title":"A Balanced Bandpass Filter With High-Selectivity and Common-Mode Suppression Based on Inverted Microstrip Gap Waveguide","authors":"Feng Wei;Xing-Chen Zhou;Zeng-Hui Shi;Hong-Yu Liu;Pei-Yuan Qin","doi":"10.1109/LMWT.2024.3519787","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519787","url":null,"abstract":"In this letter, a balanced bandpass filter (BPF) is reported by stacking two cavity resonators based on inverted microstrip gap waveguide (MGW). The proposed balanced feed structure achieves deep and wide common-mode (CM) suppression for the first time in a gap waveguide (GW) structure based on a mushroom-type electromagnetic bandgap (EBG) cell package. A highly selective balanced fourth-order bandpass response with three out-of-band transmission zeros (TZs) and CM suppression is achieved by employing a pin-loaded patch perturbation structure at the center of the upper and lower cavities and a pair of slots on the common ground. A prototype of the stacked GW balanced BPF exhibiting a high selectivity was fabricated and measured. The measured results are in good agreement with the simulated ones.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"181-184"},"PeriodicalIF":0.0,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microwave Armstrong Amplitude Modulator","authors":"Eugene N. Ivanov","doi":"10.1109/LMWT.2024.3513315","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3513315","url":null,"abstract":"We describe a microwave amplitude modulator capable of operating at high modulation rates (limited by mixer IF port bandwidth) with minimal residual phase modulation. The modulator is based on Armstrong’s idea to produce any modulated signal by varying the phase shift between the carrier and modulation sidebands. We conducted our experiments at 11 GHz. The frequency of the modulation signal was below 1 MHz to measure the residual phase modulation with the digital phase detector (DPD). We showed that the phase noise of the microwave pilot signal was the main factor limiting the minimal detectable level of the residual phase modulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"229-232"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Differential Low-Pass Filter With Wide Upper Stopband and Excellent Common-Mode Suppression","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang","doi":"10.1109/LMWT.2024.3515033","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515033","url":null,"abstract":"A compact high-performance differential low-pass filter (LPF) based on the double-sided parallel-strip line (DSPSL) structure is proposed simultaneously, featuring a wide upper stopband and excellent common-mode (CM) suppression. The intrinsic CM noise suppression can be realized with a compact circuit size due to the DSPSL phase inverter. For the differential-mode signal excitation, the low-pass response with small insertion loss (IL) and superior out-of-band rejection is exhibited. For practice, the fabricated and measured differential LPF prototype with the 1-dB cutoff frequency <inline-formula> <tex-math>$f_{text {c}}$ </tex-math></inline-formula> of 1.0 GHz demonstrates up to <inline-formula> <tex-math>$14f_{text {c}}$ </tex-math></inline-formula> of a wide upper stopband rejection over 20 dB. In addition, the excellent CM suppression is better than 40 dB over the entire measured frequency range from 0 to <inline-formula> <tex-math>$14f_{text {c}}$ </tex-math></inline-formula>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"177-180"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuhang Zhang;Xiaofan Chen;Wenhua Chen;Zhenghe Feng;Fadhel M. Ghannouchi
{"title":"A 1.7–6.5-GHz 35-W Reactively Matched GaN Power Amplifier Using a Balance-Enhanced Power Distribution Network","authors":"Yuhang Zhang;Xiaofan Chen;Wenhua Chen;Zhenghe Feng;Fadhel M. Ghannouchi","doi":"10.1109/LMWT.2024.3501308","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3501308","url":null,"abstract":"In this letter, a 1.7–6.5-GHz reactively matched power amplifier (RMPA) is designed using a 0.2-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m gallium nitride (GaN) high-electron mobility transistor (HEMT) process. To achieve an output power of more than 30 W, eight transistors are required in the power stage. The coupling effects and the asymmetry of the layout result in a significant imbalance among these transistors, which could deteriorate the performance of the power amplifier (PA). We propose a novel power distribution network (PDN) based on tightly coupled lines to mitigate the imbalance introduced by the compact interstage matching network (ISMN). The fabricated RMPA achieves an output power of 35 W and a PAE of 38%–50% under continuous-wave (CW) test.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"201-204"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Storage Optimization Scheme for PITD Method Using Sparse Matrix-Vector Multiplication","authors":"Liang Ma;Xikui Ma;Mingjun Chi;Ru Xiang;Xiaojie Zhu","doi":"10.1109/LMWT.2024.3516877","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3516877","url":null,"abstract":"An improved variant of the precise-integration time-domain (PITD) method is proposed to eliminate the inverse matrix calculation and optimize the storage burden with the help of sparse computation. First, the dimensional expanding (DE) scheme is incorporated into PITD to address the matrix inversion problem due to external sources. Then, the dense matrix exponential is absorbed in sparse matrix-vector multiplications (SpMVs) without explicit evaluation. This SpMV-based technique involves only one sparse matrix and can utilize sparse computation efficiently, so as to greatly reduce memory costs ascribed to the matrix exponential. Moreover, the theoretical analysis of the algorithm performance is presented. The numerical results verify the validity and efficiency of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"145-148"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quasi-Elliptic Dual-Band Bandpass Filter Using Flexible Mixed Coupling of Inverted-L-Shape Coaxial Resonator","authors":"Chao Wu;Shu-Qing Zhang;Sai-Wai Wong","doi":"10.1109/LMWT.2024.3519338","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519338","url":null,"abstract":"This letter introduces a compact inverted-L-shaped coaxial dual-band bandpass filter (BPF) with multiple transmission zeros (TZs). The structure uses mixed coupling between adjacent resonators to generate TZs. Notably, mixed coupling can produce <inline-formula> <tex-math>$N-1$ </tex-math></inline-formula> TZs with the Nth-order filter, significantly enhancing the frequency selectivity of the dual-band filter. A key advantage of this design is the ability to achieve arbitrary placement of the TZs without requiring any additional structures, allowing for independent control of both electric and magnetic coupling. To validate this concept, the dual-band BPF was designed, fabricated, and tested, with the final test results showing good agreement with the simulated results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"185-188"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Asymmetric SiGe BiCMOS SPDT Switch With 210 fs RON × COFF for 5G Applications","authors":"Kejie Hu;Kaixue Ma;Jiancheng Huang;Haipeng Fu","doi":"10.1109/LMWT.2024.3514883","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514883","url":null,"abstract":"This article presents a compact high-linearity single-pole double-throw (SPDT) switch built using a 0.13-<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>m SiGe BiCMOS technology for Ka-band 5G. The body-floating technique (BFT) based on the deep-n-well (DNW) transistor is used in the asymmetric structure to decrease substrate leakage and improve the power-handling capability in TX mode. Advanced performances have been achieved from the RF switch point of view with 210 fs <inline-formula> <tex-math>${R}_{text{ON}} times {C}_{text{OFF}}$ </tex-math></inline-formula>. The proposed design achieved a minimum insertion loss (IL) of 0.53/1.33 dB including pad losses, isolation of more than 21/15 dB, and IP1dB of 20/8.5 dBm in TX/RX mode. The measured IIP3 is 34.3/28 dBm at 28 GHz. The active chip area is 0.046 mm2. In contrast to the conventional structure with heterojunction bipolar transistor (HBT) or PIN diodes in SiGe process, the proposed SPDT exhibits good performances with a compact area for modern asymmetric front-end applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"225-228"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"18–45-GHz Sideband-Separating Downconverter With RF Image Rejection Calibration","authors":"Sitwala Mundia;Tinus Stander","doi":"10.1109/LMWT.2024.3514321","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514321","url":null,"abstract":"We present a sideband separating downconverter for radio astronomy applications, featuring radio frequency image rejection calibration for frequencies between 18 and 45 GHz. The multichip module optimizes image rejection for specific target observation frequencies by injecting a modulated portion of the Q-branch signal into the I-branch with independent upper and lower sideband injection control. Measurements demonstrate an average image rejection ratio improvement of 9 dB over a 7-GHz band of interest compared with a baseline uncalibrated operation, with improvement of over 40 dB in targeted subbands.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Directivity-Compensated Wideband Microstrip Coupler Based on Capacitive-Loading Patches and Reflectionless Amplitude Equalizers","authors":"Yuwei Zhang;Jinping Xu;Chenkai He","doi":"10.1109/LMWT.2024.3517605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517605","url":null,"abstract":"This letter proposes a directivity-compensated wideband coupled-line-based microstrip coupler that incorporates capacitive-loading patches and reflectionless amplitude equalizers. Three tiny rectangular patches, which are loaded symmetrically in-between the coupled lines, compensate for the directivity deterioration caused by substrate inhomogeneity in the microstrip coupler. Two reflectionless amplitude equalizers based on resistor-loaded open-ended microstrip line lossy resonators are cascaded at the coupling port and the isolation port, respectively, are utilized to improve the flatness of the coupling coefficient and the isolation without deteriorating the directivity of the coupler. Apart from the amplitude modification in S-parameters, the phase variations introduced during the design process are also analyzed. A prototype of a 20-dB microstrip directional coupler with its working frequency centered at 4.3 GHz was designed and fabricated. Measurement results demonstrate that the fractional bandwidth of the coupling coefficient with its flatness better than ±0.5 dB is as high as 137%. Measured directivity ranges from 17.5 to 36.0 dB across 1.36–7.25 GHz, demonstrating the effectiveness of the proposed design.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"189-192"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}