IEEE microwave and wireless technology letters最新文献_第5页

A 75.4–102.4-GHz Power Amplifier With 27.7−dB Gain and 16.9% PAE in 65-nm CMOS

IEEE microwave and wireless technology letters Pub Date : 2024-11-14 DOI: 10.1109/LMWT.2024.3489660

Bo Fu;Xiao Ding

引用次数: 0

Vertical and Compact ESICL-to-ESIW Transition for Multilayer Empty Substrate Integrated Circuits 多层空基板集成电路的垂直和紧凑esicl到esiw过渡

IEEE microwave and wireless technology letters Pub Date : 2024-11-14 DOI: 10.1109/LMWT.2024.3492975

David Herraiz;Héctor Esteban;Darío Herraiz;Angel Belenguer;Vicente E. Boria

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A D-Band Differential Phase Shifter Based on a Transmission Delay Line With Variable Inductors and Capacitors 基于可变电感和电容传输延迟线的d波段差分移相器

IEEE microwave and wireless technology letters Pub Date : 2024-11-12 DOI: 10.1109/LMWT.2024.3491760

Ilgwon Kim;Hyunji Koo;Wansik Kim;Songcheol Hong

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Microwave-Based Detection of Heavy Metals in Water Using an Interdigital Electrode-Integrated Complementary Split Ring Resonator Sensor 利用数字间电极集成互补裂环谐振器传感器进行水中重金属的微波检测

IEEE microwave and wireless technology letters Pub Date : 2024-11-12 DOI: 10.1109/LMWT.2024.3489607

Md. Nizam Uddin Tanim;S. M. Rakibul Hasan Shawon;Taslim Ur Rashid;Khaleda Ali

{"title":"Microwave-Based Detection of Heavy Metals in Water Using an Interdigital Electrode-Integrated Complementary Split Ring Resonator Sensor","authors":"Md. Nizam Uddin Tanim;S. M. Rakibul Hasan Shawon;Taslim Ur Rashid;Khaleda Ali","doi":"10.1109/LMWT.2024.3489607","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3489607","url":null,"abstract":"This letter presents a highly sensitive microwave sensor for detecting four heavy metals (Ag+, Pb2+, Cd2+, and Cr3+) in water. The sensor incorporates an interdigital electrode integrated complementary split ring resonator (IECSRR) to enhance electric field confinement and achieve higher sensitivity. Performance of the device has been examined for various aqueous metal solutions by assessing the changes in the stopband center frequency from scattering parameters and the limit of detection (LoD). The results obtained from simulations, experimental measurements, and circuit simulations using extracted parameters demonstrate strong agreement. The presence of Pb2+, Ag+, Cd2+, and Cr3+ causes a 12.66%, 15.04%, 19.5%, and 33.03% maximum fractional sensitivity, respectively. Additionally, the detection limits (in mg/L) for these substances are 0.634, 0.714, 0.614, and 0.533, respectively. Such a multipurpose miniature sensor with a \u0000<inline-formula> <tex-math>$25times 25$ </tex-math></inline-formula>\u0000 mm footprint is suitable for applications related to environmental security.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"135-138"},"PeriodicalIF":0.0,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

165–220-GHz Broadband Amplifier With ±0.75-dB Gain Variation and Minimum Group Delay Variation in SiGe BiCMOS 具有±0.75 db增益变化和最小群延迟变化SiGe BiCMOS的165 - 220 ghz宽带放大器

IEEE microwave and wireless technology letters Pub Date : 2024-11-12 DOI: 10.1109/LMWT.2024.3489881

Xun Chen;Jonas Winkelhake;Muh-Dey Wei;Renato Negra

{"title":"165–220-GHz Broadband Amplifier With ±0.75-dB Gain Variation and Minimum Group Delay Variation in SiGe BiCMOS","authors":"Xun Chen;Jonas Winkelhake;Muh-Dey Wei;Renato Negra","doi":"10.1109/LMWT.2024.3489881","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3489881","url":null,"abstract":"This letter presents a broadband amplifier with gain variation of less than ±0.75 dB and small group delay variation over the frequency band from 165 to 220 GHz. Different from the commonly used multiband matching approach, in this work a common broadband amplification stage is focused for the flexibility and scalability. In the common stage, broadband matching is obtained by manipulating the inband admittance, Y, to traverse the real axis of the Y-Smith chart, and offsetting the susceptance over frequency with a resonant circuit incorporating a shorted stub and the parasitic collector capacitance. Gain flatness of cascaded stages is enhanced by introducing mismatch in the common stage. The gain of an entire amplifier can be further increased by cascading stages without other efforts such as interstage matching, obtaining similar inband performance of gain and group delay variation. A prototype implemented in 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor (BiCMOS) cascades three stages to achieve a gain of 10 dB with low power consumption of 28 mW in measurements. To the best of the authors’ knowledge, this amplifier achieves the smallest gain variation and group delay variation in G-band over a large bandwidth (BW).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"95-98"},"PeriodicalIF":0.0,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Efficiency and High-Linearity Class-Fˉ¹ Power Amplifier With AM–AM and AM–PM Improvement 采用AM-AM和AM-PM改进的高效、高线性f类+ 1功率放大器

IEEE microwave and wireless technology letters Pub Date : 2024-11-12 DOI: 10.1109/LMWT.2024.3479425

Xiaobin Ji;Huifeng Yang;Cheng Zhong;Xiaosong Li;Donghui Yuan;Jinjie Wang;Ting Zhang;Fei Xiao

{"title":"High-Efficiency and High-Linearity Class-Fˉ¹ Power Amplifier With AM–AM and AM–PM Improvement","authors":"Xiaobin Ji;Huifeng Yang;Cheng Zhong;Xiaosong Li;Donghui Yuan;Jinjie Wang;Ting Zhang;Fei Xiao","doi":"10.1109/LMWT.2024.3479425","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3479425","url":null,"abstract":"In this article, a high-efficiency and high-linearity Class-F−1 power amplifier (PA) is presented. The input nonlinearity effect on Class-F−1 PA is investigated in depth, and the input nonlinearity factors \u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$varphi _{2}$ </tex-math></inline-formula>\u0000 are utilized to improve the AM-AM and AM-PM characteristics. In practice, the linearity of Class-F−1 PA is enhanced by manipulating the second-harmonic source impedance, without sacrificing the drain efficiency (DE). The design space is clearly defined for high-efficiency and high-linearity operation. For demonstration, a PA example working at 3.5–3.9 GHz was designed, fabricated, and measured. It exhibits the saturated output power greater than 40.2 dBm, the saturated gain is 8.9–14.3 dB, and DE is 65.7%–74.2%. When tested with a 40-MHz 64-QAM signal with an 8.5-dB peak-to-average-power-ratio (PAPR), the adjacent channel power ratio (ACPR) is below −44.41 dBc without digital predistortion (DPD) and −56.4 dBc with DPD. At 3.8 GHz, the fabricated PA realizes an AM-AM of 0.7 dB and an AM-PM of −1° without DPD and an AM-AM of 0.2 dB and AM-PM of −0.7° with DPD.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heterogeneous Interface-Enhanced Thin-Film SAW Devices Using Lithium Niobate on Si 基于铌酸锂的非均相界面增强薄膜SAW器件

IEEE microwave and wireless technology letters Pub Date : 2024-11-12 DOI: 10.1109/LMWT.2024.3492723

Fangsheng Qian;Junyan Zheng;Jiashuai Xu;Yansong Yang

{"title":"Heterogeneous Interface-Enhanced Thin-Film SAW Devices Using Lithium Niobate on Si","authors":"Fangsheng Qian;Junyan Zheng;Jiashuai Xu;Yansong Yang","doi":"10.1109/LMWT.2024.3492723","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3492723","url":null,"abstract":"Lithium niobate (LiNbO3) on silicon wafer has emerged as a promising candidate for high-performance filter construction in an ultrawide frequency range. However, the direct bonding of these two materials has proven challenging due to the large contrast in their thermal expansion coefficient (TEC) and the parasitic layer in thermal treatment. This article proposes utilizing an amorphous silicon layer to improve the interface quality between LiNbO3 and the supporting substrate, thereby preventing potential losses and enhancing interface reflection. In addition, this work modifies the electrical field distribution and adjusts the power flow angle to align it with the propagation direction of the targeted acoustic wave to suppress spurious modes. By leveraging the enhanced heterogeneous interface and the corresponding design method, the fabricated filter exhibits a low insertion loss (IL) of 1.2 dB, a 3-dB fractional bandwidth (FBW) of 8.9%, a clean rejection band response, and a flat passband without significant ripples. The well-balanced performance has delivered a valid methodology of the LiNbO3-on-silicon heterostructure for building radio frequency (RF) spurious-free and low-loss filters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"123-126"},"PeriodicalIF":0.0,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Wideband Switched-Capacitor Circulator Based on Isolation Improvement Technique With Transformers 基于变压器隔离改进技术的宽带开关电容环行器

IEEE microwave and wireless technology letters Pub Date : 2024-11-08 DOI: 10.1109/LMWT.2024.3487632

Bingjun Tang;Chenxi Zhang;Chenglong Liang;Zhongming Xue;Zhuoqi Guo;Li Geng

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Compact Cascaded Broadband Choke Device for Suppressing Transmission Shaft Microwave Leakage 用于抑制传动轴微波泄漏的紧凑型级联宽带扼流圈装置

IEEE microwave and wireless technology letters Pub Date : 2024-11-08 DOI: 10.1109/LMWT.2024.3487994

Tailai Ni;Xiufang Wang;Tao Dong;Bangji Wang;Song Qiu;Qingxiang Liu

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IEEE Microwave and Wireless Technology Letters publication 电气和电子工程师学会《微波与无线技术通讯》出版物

IEEE microwave and wireless technology letters Pub Date : 2024-11-07 DOI: 10.1109/LMWT.2024.3475163

引用次数: 0