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Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance 采用RC反馈和电感谐振的宽带CMOS低噪声放大器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3553444
Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park
{"title":"Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance","authors":"Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park","doi":"10.1109/LMWT.2025.3553444","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553444","url":null,"abstract":"In this study, we design a CMOS wideband low-noise amplifier (LNA) with staggered tuning technique. In a wideband LNA, a design technique that can secure the gain flatness using <italic>RC</i> feedback and inductor for resonance is proposed. The common-source (CS) structure with an <italic>RC</i> feedback and an inductor is analyzed using equivalent circuits, and it was verified that the gain could be flattened by adjusting the resonance frequency and the resistance of the <italic>RC</i> feedback. In addition, a high-pass filter (HPF) structure and an adaptive bias circuit (ABC) are applied to obtain a reasonable noise figure (NF) and linearity in a wide frequency range. A designed wideband LNA is fabricated using 65-nm RFCMOS process. As a measured result, the 1-dB bandwidth is approximately 15.6GHz from 20.1 to 35.7GHz. The 3-dB bandwidth is measured at 18.4 GHz. In the range of 25–35 GHz, the NF is lower than 3.45 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"722-725"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array 一种带ftl和开关电容阵列的q波段超低抖动亚谐波注入锁频四倍器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552410
Po-Yuan Chen;Hong-Yeh Chang
{"title":"A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array","authors":"Po-Yuan Chen;Hong-Yeh Chang","doi":"10.1109/LMWT.2025.3552410","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552410","url":null,"abstract":"In this letter, a <italic>Q</i>-band ultralow jitter subharmonically injection-locked frequency quadrupler (SILFQ) with frequency-tracking loop (FTL) and 2-bit switched-capacitor array (SCA) is proposed using 90-nm CMOS process. To comprehensively enhance the overall performance of local oscillator (LO) generation, the proposed SILFQ not only employs FTL to adaptively control the locking mechanism over variations but also integrates an unprecedented combination of SCA and frequency multiplier to effectively broaden the overall locking range. The proposed SILFQ with SCA demonstrates a measured locking range of 6.4 GHz. With FTL, the measured phase noise at 1-MHz offset and root-mean-square (rms) jitter integrated from 1 kHz to 40 MHz are −128.8 dBc/Hz and 10.1 fs, respectively. The jitter degradation between injection and output signal is merely within 4 fs. The dc power consumption is 37.4 mW, with a differential output power of −2 dBm and a compact chip size of 0.7 mm<sup>2</sup>. Featuring several excellent figure of merits (FoMs), this design is well-suited for advanced millimeter-wave (mm-wave) applications due to its superior circuit performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"864-867"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers 基于ai辅助深度学习的高效F类功率放大器设计
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552495
Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager
{"title":"AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers","authors":"Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager","doi":"10.1109/LMWT.2025.3552495","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552495","url":null,"abstract":"This article presents a deep-learning-based approach for designing Class F power amplifiers (PAs). We use convolutional neural networks (CNNs) to predict the scattering parameters of pixelated electromagnetic (EM) layouts. Using a CNN-based surrogate model and an evolutionary algorithm, we synthesize complex Class F output networks. As a proof of concept, we implement a gallium nitride (GaN) HEMT Class F PA, achieving a measured output power of 41.6 dBm and a drain efficiency of 74% at 2.9 GHz. The prototype also linearly reproduces a 20-MHz modulated signal with an 8.5-dB peak-to-average power ratio (PAPR), achieving an adjacent channel leakage ratio (ACLR) of −50.7 dBc with digital predistortion (DPD). To the best of our knowledge, this is the first deep-learning-based Class F PA design using pixelated layout structures.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"690-693"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10948016","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Loss Reflectionless Filtering Attenuator With Ultrawide Bandwidth and Extended Tunable Attenuation Range 具有超宽带宽和扩展可调谐衰减范围的可调谐损耗无反射滤波衰减器
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3551311
Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin
{"title":"Tunable Loss Reflectionless Filtering Attenuator With Ultrawide Bandwidth and Extended Tunable Attenuation Range","authors":"Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin","doi":"10.1109/LMWT.2025.3551311","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551311","url":null,"abstract":"In this letter, a novel tunable loss reflectionless filtering attenuator with ultrawide bandwidth and extended tunable attenuation range is proposed for the first time. The ultrawide bandwidth benefits from the application of unequal-width three-coupled line structures. In order to achieve both in-band and out-of-band reflectionless performance, a pair of absorptive sections are loaded at both ports to eliminate out-of-band reflections. Moreover, the unequal-width three-coupled line structure loaded by p-i-n diodes is utilized to realize a wide tunable attenuation range. For demonstration, an ultrawideband (UWB) reflectionless filtering attenuator prototype is fabricated, where the measured results agree well with the corresponding simulations. The measured results show that the reflectionless filtering attenuator features a fractional bandwidth of 104.9% and can realize the attenuation of 2.5–26.4 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"666-669"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC-to-89-GHz AMUX-Based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem 用于多路dac子系统的250nm InP HBT技术的dc -89 ghz amux IQ调制器
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552690
Munehiko Nagatani;Hitoshi Wakita;Teruo Jyo;Yuta Shiratori;Miwa Mutoh;Akira Kawai;Masanori Nakamura;Fukutaro Hamaoka;Hiroshi Yamazaki;Takayuki Kobayashi;Yutaka Miyamoto;Hiroyuki Takahashi
{"title":"DC-to-89-GHz AMUX-Based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem","authors":"Munehiko Nagatani;Hitoshi Wakita;Teruo Jyo;Yuta Shiratori;Miwa Mutoh;Akira Kawai;Masanori Nakamura;Fukutaro Hamaoka;Hiroshi Yamazaki;Takayuki Kobayashi;Yutaka Miyamoto;Hiroyuki Takahashi","doi":"10.1109/LMWT.2025.3552690","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552690","url":null,"abstract":"This article presents an ultra broadband in-phase and quadrature (IQ) modulator in 250-nm InP heterojunction bipolar transistor (HBT) technology for a multiplexing-digital-to-analog converter (DAC) subsystem enabling high-symbol-rate baseband signal generation in optical communications. The IQ modulator consists of two analog multiplexers (AMUXs), data/clock buffers, a quadrature filter, a linear adder, and an output buffer. The fabricated AMUX-based IQ modulator integrated circuit (IC) has a bandwidth of 98 GHz ranging from direct current (DC) and consumes a total power of 880 mW with a supply voltage of −4.0 V. The packaged IQ modulator module with coaxial connectors maintains a bandwidth of 89 GHz. Using the multiplexing-DAC subsystem based on this module, high-symbol-rate baseband signal generations and optical modulations up to 168-GBaud 16-ary quadrature amplitude modulation (16QAM) were successfully demonstrated. To the best of our knowledge, this is the broadest bandwidth IQ modulator reported to date.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"868-871"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subwavelength 8 × 8 Butler Matrix With Pixel Metamaterial for Space Limited Systems 空间有限系统中具有像素超材料的亚波长8 × 8巴特勒矩阵
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552854
Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li
{"title":"Subwavelength 8 × 8 Butler Matrix With Pixel Metamaterial for Space Limited Systems","authors":"Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li","doi":"10.1109/LMWT.2025.3552854","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552854","url":null,"abstract":"In this letter, a subwavelength <inline-formula> <tex-math>$8times 8$ </tex-math></inline-formula> Butler matrix (BM) with inverse-designed pixel metamaterial is proposed for space limited systems. With inverse-designed metamaterial, the broadband asymmetric 3-dB couplers with arbitrary phase difference are constructed, which eliminates the space for phase delay lines in BM, significantly reducing the overall size. Finally, a prototype of the proposed BM is fabricated and measured, which exhibits a bandwidth of 21.6% by occupying a compact size of <inline-formula> <tex-math>$0.95lambda _{0}times 0.70lambda _{0}times 0.01lambda _{0}$ </tex-math></inline-formula>. With a subwavelength scale, the proposed ultracompact BM can be easily integrated with antenna array for applications in compact multibeam systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"642-645"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and Experimental Investigations of a 90° Bend Based on Nonradiative Dielectric Waveguide 基于非辐射介质波导的90°弯曲理论与实验研究
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2024.3523901
Meiling Ou;Yiang Chen;Dagang Liu;Haiyang Wang;Tianming Li;Biao Hu;Cheng Zhang;Fadhel M. Ghannouchi;Hao Li
{"title":"Theoretical and Experimental Investigations of a 90° Bend Based on Nonradiative Dielectric Waveguide","authors":"Meiling Ou;Yiang Chen;Dagang Liu;Haiyang Wang;Tianming Li;Biao Hu;Cheng Zhang;Fadhel M. Ghannouchi;Hao Li","doi":"10.1109/LMWT.2024.3523901","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3523901","url":null,"abstract":"Nonradiative dielectric (NRD) waveguides are recognized as suitable transmission lines for millimeter-wave applications, as they are planarized and of low loss. However, since the mode with the lowest loss is not the mode with the lowest cutoff frequency, NRD waveguides are often used in an overmoded state. Many devices based on NRD that do not need to be deformed are designed and have achieved good results. Nevertheless, the physical mechanism underpinning the bending of NRD waveguides in the direction of propagation while maintaining an unchanged cross section has not been fully elucidated, due to the inapplicability of the original coupled-wave analysis method. In this letter, we focus on a 90° NRD bend and attempt to explain the mode coupling of NRD during the bending process. The bandwidth of the designed W-band NRD bend with a transmission efficiency greater than 95% is 5 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"634-637"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz 基于相变材料的直流至200 GHz宽带高性能SPDT开关
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552771
Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai
{"title":"Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz","authors":"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai","doi":"10.1109/LMWT.2025.3552771","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552771","url":null,"abstract":"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"730-733"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Low-Loss Shielded Interconnects for D-Band/Sub-THz Applications Using Microscale Metal Printing Technologies 采用微型金属印刷技术的d波段/亚太赫兹应用新型低损耗屏蔽互连
IEEE microwave and wireless technology letters Pub Date : 2025-03-31 DOI: 10.1109/LMWT.2025.3552351
Genaro Soto-Valle;Marvin Joshi;Yaw Mensah;Nikolas Roeske;Charles A. Lynch;John D. Cressler;Manos M. Tentzeris
{"title":"Novel Low-Loss Shielded Interconnects for D-Band/Sub-THz Applications Using Microscale Metal Printing Technologies","authors":"Genaro Soto-Valle;Marvin Joshi;Yaw Mensah;Nikolas Roeske;Charles A. Lynch;John D. Cressler;Manos M. Tentzeris","doi":"10.1109/LMWT.2025.3552351","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552351","url":null,"abstract":"This work presents the first demonstration of a shielded interconnect geometry enabled by a novel metal microadditive manufacturing (<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>AM) process. The printed interconnect operates at the D band (110–170 GHz) and features an innovative helical-shaped geometry that resembles the ideal transmission performance of a microscale coaxial cable, significantly reducing the impedance mismatch losses that are typically observed in conventional wirebonding interconnects when utilized beyond 100 GHz. The measurements demonstrate superior and reliable performance at least up to 155 GHz with an insertion loss (IL) below 1.5 dB and an RL greater than 10 dB. The proposed <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>AM-enabled interconnect has the potential to pave the way for the next generation of heterogeneous packaging solutions targeted for sub-terahertz (THz) applications that require robust and broadband performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"776-779"},"PeriodicalIF":0.0,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process GaAs技术与陶瓷工艺异质集成中的紧凑型ku波段极低相位噪声窄带压控振荡器
IEEE microwave and wireless technology letters Pub Date : 2025-03-31 DOI: 10.1109/LMWT.2025.3547900
Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang
{"title":"A Compact Ku-Band Extreme Low Phase Noise Narrowband VCO in Heterogenous Integration of GaAs Technology and Ceramic Process","authors":"Xiaoqiang Gao;Jinhai Xiao;Jiacheng Zhang;Maliang Liu;Yintang Yang","doi":"10.1109/LMWT.2025.3547900","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3547900","url":null,"abstract":"In this letter, the Ku-band low phase noise (PN) voltage-controlled oscillator (VCO) in heterogenous integration of GaAs technology and ceramic process is presented. The VCO takes the advantages of low-noise GaAs HBT technology and low-loss ceramic process, which mainly consists of four parts, a high quality-factor (Q) resonator, a GaAs MMIC chip, a varactor diodes chip, and a GaAs MOS capacitor. Utilizing the GaAs processes, the novel base tuning circuit applied MMIC chips and loaded a varactor diode is investigated, eventually achieving a Ku-band oscillation. Moreover, a high quality-factor (Q) dielectric resonator is realized with ceramic process to confirm good PN performance. The high-Q resonator is based on a ceramic resonator with a circular slot etched at the top, obtaining an operating frequency of 16.1 GHz and a Q value of 1093. Finally, the VCO is manufactured, heterogenous integrated, and measured. The VCO covers an operating frequency range from 15.87 to 15.92 GHz with pn of −114 dBc/Hz at 100-kHz offset.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"710-713"},"PeriodicalIF":0.0,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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