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IEEE microwave and wireless technology letters最新文献

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37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications 用于宽带无线应用的37.1 dbm w波段功率放大器模块，采用基于氮化镓的hemt和电阻背金属稳定
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3527934
Yasuhiro Nakasha;Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Atsushi Yamada;Toshihiro Ohki
{"title":"37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications","authors":"Yasuhiro Nakasha;Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Atsushi Yamada;Toshihiro Ohki","doi":"10.1109/LMWT.2025.3527934","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527934","url":null,"abstract":"This letter presents a four-way W-band power amplifier (PA) module that packages GaN-based high electron mobility transistor (HEMT) millimeter-wave monolithic integrated circuits (MMICs) designed with coplanar waveguides (CPWs). A resistive-back-metal (RBM) layer was formed on the back side of the MMICs to keep stable in the module even without using substrate vias. The verification of the effect of the RBM layer was performed using CPW-based MMIC test chips. The assembled PA module, where millimeter-wave components, such as a waveguide (WG) combiner/divider and a WG-to-microstrip line transition, were optimized to reduce losses and flatten frequency responses, demonstrated stable and broadband characteristics in a frequency range of 88–100 GHz. A peak output power (<inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula>) of 37.1 dBm with a power-added efficiency (PAE) of 9.9% was achieved at a frequency of 92 GHz and a bias voltage (<inline-formula> <tex-math>$V_{text {DS}}$ </tex-math></inline-formula>) of 15 V. <inline-formula> <tex-math>$V_{text {DS}}$ </tex-math></inline-formula> was set to 20 V to enhance the power performance of the PA module, achieving a peak <inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula> of 38.8 dBm with a PAE of 8.1%. To the best of our knowledge, the PA module exhibited the highest peak <inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula> value among W-band single PA modules with a bandwidth (BW) of more than 10 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"358-361"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 24-to-30-GHz GaN MMIC Doherty Power Amplifier Using Reduced Peaking Intrinsic Output Impedance for Bandwidth Extension 一种24- 30ghz GaN MMIC Doherty功率放大器，采用降低峰值固有输出阻抗进行带宽扩展
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3528628
Ruijia Liu;Haoyang Jia;Lin Qi;Anding Zhu
{"title":"A 24-to-30-GHz GaN MMIC Doherty Power Amplifier Using Reduced Peaking Intrinsic Output Impedance for Bandwidth Extension","authors":"Ruijia Liu;Haoyang Jia;Lin Qi;Anding Zhu","doi":"10.1109/LMWT.2025.3528628","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3528628","url":null,"abstract":"This letter presents a millimeter-wave gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) for 5G-NR applications. The bandwidth of the DPA is extended by reducing the intrinsic output impedance of the power-stage peaking transistor at the back-off by selecting a proper gate bias voltage. To verify the concept, a 24–30-GHz GaN MMIC DPA was designed using a 120-nm GaN-on-SiC HEMT process. The fabricated DPA can achieve a saturated power range of 31.6–32.7 dBm, with a corresponding power-added efficiency (PAE) of 20%–27.6%. The PAE at 6-dB PBO ranges from 18.2% to 22.4% in the 24–30-GHz frequency band. When excited by a 100-MHz 5G-NR signal, the DPA can achieve 1.1% EVM and -45.8 dBc ACLR after using digital predistortion.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"362-365"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10848253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rectangular-Cavity Bandpass Filters With Large Metal Cylinders and Different Fillets 大金属圆柱体和不同圆角的矩形腔带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3527044
Dong-Sheng La;Yu-Jiao Zhang;Dong-Qun Wang;Wen-Zheng Sun;Kai-Da Xu
{"title":"Rectangular-Cavity Bandpass Filters With Large Metal Cylinders and Different Fillets","authors":"Dong-Sheng La;Yu-Jiao Zhang;Dong-Qun Wang;Wen-Zheng Sun;Kai-Da Xu","doi":"10.1109/LMWT.2025.3527044","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527044","url":null,"abstract":"This letter proposes a class of rectangular-cavity bandpass filters (RCBPFs). First, an initial tri-band RCBPF is designed by feeding an empty rectangular cavity (RC) with two orthogonal probes. Second, a dual-band RCBPF is designed by loading two large metal cylinders (LMCs) into the RC. The LMCs change the electric field distributions and resonant frequencies of six resonant modes. Moreover, by increasing the radii of two fillets on the RC, the two transmission zeros (TZs) between two passbands are eliminated. Therefore, a wideband RCBPF is realized. Both proposed RCBPFs exhibit wide stopband due to the effective suppression of out-of-band spurious modes. The performance of these RCBPFs is validated through fabrication and measurement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"282-285"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems 基于神经网络辅助虚拟波束形成的两级数字预失真在MIMO系统中的信道间效应
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3526625
Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi
{"title":"Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems","authors":"Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi","doi":"10.1109/LMWT.2025.3526625","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526625","url":null,"abstract":"Existing method to linearize PAs in multiple-input multiple-output (MIMO) systems either rely on deploying over-the-air (OTA) antenna arrays in the far-field or neglect the effects of interchannel. To address these issues, this letter proposes a two-stage digital predistortion (DPD) approach with neural-network (NN)-assisted virtual beamforming (VB) for interchannel effects in MIMO systems. The main DPD compensates for distortion of PAs, while the sub-DPD compensates for distortion of the interchannel effects. An experimental test was performed using a uniform linear array (ULA) at 3.5 GHz. Based on experimental results, the proposed method achieves up to 5.37-dBc improvement in adjacent channel power ratio (ACPR), closely replicates the linearization performance of OTA, and eliminates the need for remote OTA deployment.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"346-349"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology 基于130纳米SiGe技术的78 - 106 ghz电流复用LNA，最小NF为4db，功耗为12.5 mw
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3527522
Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su
{"title":"A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology","authors":"Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su","doi":"10.1109/LMWT.2025.3527522","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527522","url":null,"abstract":"In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"330-333"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology 基于三端口匹配技术的高效率485 - 525ghz片上功率组合三倍器
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2024.3525340
Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei
{"title":"A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology","authors":"Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei","doi":"10.1109/LMWT.2024.3525340","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525340","url":null,"abstract":"In this letter, a high-efficiency 485–525 GHz frequency balanced tripler using three-port matching technology (TPMT) is reported. In comparison to traditional balanced tripler, the TPMT uses an on-chip capacitor connected to a biased microstrip line (Ms) at the bias port, which not only provides dc and RF isolation but also functions as part of the diode matching. The impedance of bias port participates in the matching process of the diode, effectively reducing the parasitic effect associated with the on-chip capacitance and thereby enhancing the efficiency of the tripler. In addition, this study adopts the on-chip power combining technology to improve the power handling capability of the frequency tripler and minimize the effects of assembly errors. At room temperature, the measured results show that the tripler has an efficiency of 4.2%–13.42% over the 485–525 GHz band at 70–172-mW input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"302-305"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity 具有增强隔离和频率选择性的平面平衡和单端双路滤波交叉
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526823
Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang
{"title":"Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang","doi":"10.1109/LMWT.2025.3526823","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526823","url":null,"abstract":"In this letter, a novel high-performance planar balanced and single-ended dual-path (BSDP) filtering crossover is proposed, which achieves not only cross-transmission and great common-mode (CM) suppression but also enhanced isolation and frequency selectivity. The constraint rules of S-parameters are provided, and the circuit structure is simplified and analyzed based on the classical even- and odd-mode method. The freely selected electrical parameters of the BSDP crossover are considered and explored to control the filtering transmission bandwidths of the balanced path and single-ended (SE) path, independently. To verify the viability of this design, a microstrip prototype is manufactured and measured with enhanced wideband isolation and sharp filtering selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"286-289"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band ka波段多间隙波导液晶移相器
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3527029
Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez
{"title":"Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band","authors":"Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez","doi":"10.1109/LMWT.2025.3527029","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527029","url":null,"abstract":"This letter presents for the first time an innovative waveguide structure, the multigap-waveguide (MGWG), utilizing liquid crystal (LC) technology to develop a continuously tunable phase shifter at Ka-band. In contrast to existing LC phase shifters, this design eliminates the need for polymer films or thin-film stepped impedance structures to control LC molecules. The inclusion of a gap waveguide flange ensures an individual electrical biasing of the four electrodes. The proposed design achieves a maximum differential phase of 281° in the frequency range from 24 to 38.5 GHz, with insertion losses ranging from 2.1 to 3.1 dB. The maximum figure of merit (FoM) is 105°/dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"294-297"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10843103","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias 斜外磁偏置全各向异性圆波导的截止频率
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526415
Konstantinos Delimaris;Grigorios P. Zouros
{"title":"Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias","authors":"Konstantinos Delimaris;Grigorios P. Zouros","doi":"10.1109/LMWT.2025.3526415","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526415","url":null,"abstract":"In this letter, the cutoff frequencies of multilayered fully anisotropic circular waveguides with metallic walls are calculated in the general case, in which the waveguide’s anisotropic material is magnetized by an external magnetic bias which is obliquely oriented with respect to the waveguide’s axis. This is a generalization of cases where the bias is aligned to the waveguide’s axis and the material features gyrotropic behavior. This problem is solvable via a coupled-field volume integral equation-cylindrical Dini series expansion (CFVIE-CDSE) method, previously used for the calculation of electromagnetic (EM) scattering by anisotropic cylinders with oblique magnetic bias, by combining formerly constructed modified tensorial Green’s functions (GFs) to account for the boundary conditions (BCs) on the metallic walls. We validate the extended CFVIE-CDSE method with the HFSS commercial software and we study a microwave application of a G-610 aluminum garnet ferrite-loaded waveguide, magnetized under oblique magnetic bias, where we compute the complex cutoff frequencies.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"266-269"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control 输入谐波控制的线性增强Doherty功率放大器设计策略
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2024.3524123
Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen
{"title":"A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control","authors":"Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen","doi":"10.1109/LMWT.2024.3524123","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3524123","url":null,"abstract":"In this letter, a linearity-enhanced Doherty power amplifier (DPA) design strategy based on input second-harmonics control is proposed. By combining the load modulation process and analyzing the gain compression and phase changes caused by introducing input harmonics, suitable harmonic parameters are determined. The proposed method helps to reduce amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortion. Moreover, this method has a minimal impact on efficiency. To verify this method, a linearity-enhanced DPA is designed to operate within 3.2–3.7 GHz. Test results exhibit AM-AM distortion within 0.75 dB, AM-PM distortion within 3°, and the adjacent channel power ratio (ACPR) better than −40 dBc under 80-MHz modulated signal excitation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"350-353"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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