Novel Low-Loss Shielded Interconnects for D-Band/Sub-THz Applications Using Microscale Metal Printing Technologies

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Genaro Soto-Valle;Marvin Joshi;Yaw Mensah;Nikolas Roeske;Charles A. Lynch;John D. Cressler;Manos M. Tentzeris
{"title":"Novel Low-Loss Shielded Interconnects for D-Band/Sub-THz Applications Using Microscale Metal Printing Technologies","authors":"Genaro Soto-Valle;Marvin Joshi;Yaw Mensah;Nikolas Roeske;Charles A. Lynch;John D. Cressler;Manos M. Tentzeris","doi":"10.1109/LMWT.2025.3552351","DOIUrl":null,"url":null,"abstract":"This work presents the first demonstration of a shielded interconnect geometry enabled by a novel metal microadditive manufacturing (<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>AM) process. The printed interconnect operates at the D band (110–170 GHz) and features an innovative helical-shaped geometry that resembles the ideal transmission performance of a microscale coaxial cable, significantly reducing the impedance mismatch losses that are typically observed in conventional wirebonding interconnects when utilized beyond 100 GHz. The measurements demonstrate superior and reliable performance at least up to 155 GHz with an insertion loss (IL) below 1.5 dB and an RL greater than 10 dB. The proposed <inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>AM-enabled interconnect has the potential to pave the way for the next generation of heterogeneous packaging solutions targeted for sub-terahertz (THz) applications that require robust and broadband performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"776-779"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10946181/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents the first demonstration of a shielded interconnect geometry enabled by a novel metal microadditive manufacturing ( $\mu $ AM) process. The printed interconnect operates at the D band (110–170 GHz) and features an innovative helical-shaped geometry that resembles the ideal transmission performance of a microscale coaxial cable, significantly reducing the impedance mismatch losses that are typically observed in conventional wirebonding interconnects when utilized beyond 100 GHz. The measurements demonstrate superior and reliable performance at least up to 155 GHz with an insertion loss (IL) below 1.5 dB and an RL greater than 10 dB. The proposed $\mu $ AM-enabled interconnect has the potential to pave the way for the next generation of heterogeneous packaging solutions targeted for sub-terahertz (THz) applications that require robust and broadband performance.
采用微型金属印刷技术的d波段/亚太赫兹应用新型低损耗屏蔽互连
这项工作首次展示了一种新型金属微增材制造($\mu $ AM)工艺实现的屏蔽互连几何结构。印刷的互连在D波段(110-170 GHz)工作,具有创新的螺旋形几何形状,类似于微尺度同轴电缆的理想传输性能,显著降低了传统线键连接中使用超过100 GHz时通常观察到的阻抗失配损失。测量结果表明,在至少高达155ghz的频率下,该天线具有卓越可靠的性能,插入损耗(IL)低于1.5 dB, RL大于10 dB。提出的$\mu $ am支持的互连有可能为针对需要强大宽带性能的次太赫兹(THz)应用的下一代异构封装解决方案铺平道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.00
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