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IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521605
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引用次数: 0
Welcome to the New Editor-in-Chief 欢迎来到新主编
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522597
Roberto Gómez García;Zhizhang David Chen
{"title":"Welcome to the New Editor-in-Chief","authors":"Roberto Gómez García;Zhizhang David Chen","doi":"10.1109/LMWT.2024.3522597","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522597","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"2-3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835209","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS” “40纳米CMOS变压器嵌入式网络gmax核心的d波段高增益低噪声放大器”的勘误表
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3515712
Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng
{"title":"Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”","authors":"Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng","doi":"10.1109/LMWT.2024.3515712","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515712","url":null,"abstract":"Presents corrections to the paper, Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"139-139"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835207","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521603
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3521603","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521603","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835838","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2024 Index IEEE Microwave and Wireless Technology Letters Vol. 34 2024索引IEEE微波和无线技术信件卷34
IEEE microwave and wireless technology letters Pub Date : 2024-12-23 DOI: 10.1109/LMWT.2024.3519798
{"title":"2024 Index IEEE Microwave and Wireless Technology Letters Vol. 34","authors":"","doi":"10.1109/LMWT.2024.3519798","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519798","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1415-1489"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10812031","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142875115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475169
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3475169","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475169","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779387","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475171
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3475171","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475171","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10779386","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor 采用部分耦合变压器和大晶体管的w波段宽带CMOS LNA
IEEE microwave and wireless technology letters Pub Date : 2024-11-26 DOI: 10.1109/LMWT.2024.3499322
Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim
{"title":"W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor","authors":"Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim","doi":"10.1109/LMWT.2024.3499322","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3499322","url":null,"abstract":"This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"83-86"},"PeriodicalIF":0.0,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes 数字电极间带凹槽的横向激发体声谐振器
IEEE microwave and wireless technology letters Pub Date : 2024-11-25 DOI: 10.1109/LMWT.2024.3495722
Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun
{"title":"Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes","authors":"Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun","doi":"10.1109/LMWT.2024.3495722","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3495722","url":null,"abstract":"Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (\u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 by changing the groove size. The equivalent series capacitor (\u0000<inline-formula> <tex-math>$C_{text {r}}$ </tex-math></inline-formula>\u0000) is introduced due to the etched grooves, and consequently, \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Neural Space Mapping-Based Inverse Modeling Method for Microwave Filter Design 基于神经网络空间映射的微波滤波器反建模方法
IEEE microwave and wireless technology letters Pub Date : 2024-11-25 DOI: 10.1109/LMWT.2024.3503572
Weicong Na;Taiqi Bai;Dongyue Jin;Hongyun Xie;Wanrong Zhang;Qi-Jun Zhang
{"title":"Advanced Neural Space Mapping-Based Inverse Modeling Method for Microwave Filter Design","authors":"Weicong Na;Taiqi Bai;Dongyue Jin;Hongyun Xie;Wanrong Zhang;Qi-Jun Zhang","doi":"10.1109/LMWT.2024.3503572","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3503572","url":null,"abstract":"This letter proposes an advanced neural space mapping (NSM)-based inverse modeling method and its applications to microwave filter design. For the first time, the NSM method is introduced into inverse microwave modeling with input dimensional reduction (IDR). By using the Fourier transform and its low-frequency subspaces, we convert the S-parameter curve into a signal spectrum where the energy is concentrated in the low-frequency range, to reduce the dimension of the inverse model. We also propose a two-stage training algorithm for the NSM-based inverse model, along with its application methodology for microwave filter design. Two microwave filter design examples are presented to demonstrate the feasibility of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"12-15"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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