IEEE microwave and wireless technology letters最新文献

Simultaneous Measurement of Four Electromagnetic Components With a Four-Port Composite Probe for Near-Field Scanning 四端口复合探头近场扫描同时测量四种电磁分量

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-30 DOI: 10.1109/LMWT.2025.3647529

Lei Wang;Xinyu Lu;Quan Huang;Hongyue Wang

{"title":"Simultaneous Measurement of Four Electromagnetic Components With a Four-Port Composite Probe for Near-Field Scanning","authors":"Lei Wang;Xinyu Lu;Quan Huang;Hongyue Wang","doi":"10.1109/LMWT.2025.3647529","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3647529","url":null,"abstract":"In this work, a four-port composite probe, based on the probe compensation technique, is proposed to simultaneously measure four different electromagnetic components (<inline-formula> <tex-math>$H_{y},E_{z},E_{y}$ </tex-math></inline-formula>, and <inline-formula> <tex-math>$H_{z}$ </tex-math></inline-formula>). The proposed composite probe is made of a pair of curved U-shaped loops as the detection section, four strip-lines as the transmission section, and four sub-miniature A (SMA) connectors as the output section. Some via fences and via arrays are introduced into the proposed probe and optimized to realize broadband operation at 4–15 GHz. Note that these curved U-shaped loops, strip-line, SMA connectors, and via fences and via arrays are all symmetrically placed to minimize unwanted electromagnetic coupling. Moreover, a microstrip line (ML) and slot-line (SL) with 50-<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> matching loads are together utilized as calibration kits to characterize and calibrate the proposed composite probe. Finally, to verify the effectiveness of the design, the proposed four-port composite probe was simulated by high-frequency electromagnetic software, manufactured on a four-layer printed circuit board (PCB), and characterized by a near-field scanning measurement system with the above calibration kits. Simulated and measured results reveal that the proposed four-port composite not only achieves the simultaneous measurement of four electromagnetic field components (<inline-formula> <tex-math>$H_{y},E_{z},E_{y}$ </tex-math></inline-formula>, and <inline-formula> <tex-math>$H_{z}$ </tex-math></inline-formula>) but also has a wide working bandwidth (4–15 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"645-648"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A –82.6-dBc Reference Spur and 47.8 fsrms Integrated Jitter SiGe BiCMOS Phase-Locked Loop Exploiting a Dual-Path Quadrature Phase Detector 利用双路正交鉴相器的- 82.6 dbc参考杂散和47.8 fsrms集成抖动SiGe BiCMOS锁相环

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-29 DOI: 10.1109/LMWT.2025.3646154

Gang Wu;Shiqi Chen;Xiuqiong Li;Yuan Liang;Yanan Bao;Quan Cheng

引用次数: 0

Comments on “Rat Race Coupler Design in Fixed Width SIW/Microstrip: Methodology and Validation” 关于“固定宽度SIW/微带的高强度耦合器设计：方法与验证”的评论

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-11 DOI: 10.1109/LMWT.2025.3639359

Rakesh Sinha

引用次数: 0

A Wideband and High-Density Integration Microwave Transceiver Component for Tile-Style Phased Array With SiP Technology 一种基于SiP技术的贴片式相控阵宽带高密度集成微波收发器

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-02 DOI: 10.1109/LMWT.2025.3637241

Taifu Zhou;Guo Guo;Zeyuan Yang;Hongchao Wang;Zhigang Wang;Bo Yan;Yanyu Wei

{"title":"A Wideband and High-Density Integration Microwave Transceiver Component for Tile-Style Phased Array With SiP Technology","authors":"Taifu Zhou;Guo Guo;Zeyuan Yang;Hongchao Wang;Zhigang Wang;Bo Yan;Yanyu Wei","doi":"10.1109/LMWT.2025.3637241","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3637241","url":null,"abstract":"A novel K-band transceiver component is introduced in this letter, featured with high-density integration, wide band, and miniaturization. The advanced system-in-package (SiP) technology and double-sided slotted (DS) packaging technology are employed to integrate the core chip and GaAs transceiver chip circuits with four channels together, and therefore to achieve the lightening and thinning of the component. After structure design and thermal design, an <inline-formula> <tex-math>$8times 12$ </tex-math></inline-formula> tile style module in K-band has been manufactured and tested. Test results show that the active transmission gains are more than 5 dB, with the input and output reflection loss more than 10 dB from 20.5 to 25 GHz within the relative bandwidth of 21.7%. For the total 96 channels, phase consistency is less than 8.5°, and the amplitude consistency is better than 0.59 dB, demonstrating excellent channel consistency. Additionally, the total dimensions of the fabricated module are only <inline-formula> <tex-math>$104times 78$ </tex-math></inline-formula> mm, and the total weight is only 290 g. The architecture design and processing technologies indicate significant potential for miniaturizing and high-density integrated tile-style phased array antennas.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"633-636"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Packaged Eight-Channel I/Q Receiver in 65-nm CMOS With Microstrip-to-Waveguide Transition for D-Band Applications 封装的8通道I/Q接收器在65纳米CMOS与微带到波导转换的d波段应用

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-02 DOI: 10.1109/LMWT.2025.3635649

Ning Jiang;Ze Shen;Pingyang He;Huiqi Liu;Guohua Zhao;Ming Zhao;Dalong Zhu;Dixian Zhao

{"title":"A Packaged Eight-Channel I/Q Receiver in 65-nm CMOS With Microstrip-to-Waveguide Transition for D-Band Applications","authors":"Ning Jiang;Ze Shen;Pingyang He;Huiqi Liu;Guohua Zhao;Ming Zhao;Dalong Zhu;Dixian Zhao","doi":"10.1109/LMWT.2025.3635649","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3635649","url":null,"abstract":"This letter presents a compact eight-channel direct-conversion I/Q receiver (RX) for D-band application. For area and power efficiency, one compact local oscillator (LO) multiplication and distribution network is shared by all channels. The in-channel building blocks are carefully optimized for I/Q amplitude-phase balance and overall performance improvement. Fabricated in 65-nm complementary metal–oxide–semiconductor (CMOS) with a fan-out wafer-level chip-scale packaging (WLCSP) process, the chip occupies a total area of 15.05 mm<sup>2</sup>. A microstrip-to-waveguide (WG) transition on the printed circuit board (PCB) is designed and measured, aiming to verify the packaging performance. The measured peak gain is 21.91 dB within the 3-dB bandwidth of 115–129.5 GHz. The measured double-sideband noise figure is 11.5–13.3 dB, and the image rejection is over 28 dBc. The RX consumes 674 mW during operation, including <inline-formula> <tex-math>$8times 71$ </tex-math></inline-formula> mW for eight channels and 106 mW for the common LO chain.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"621-624"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Temperature-Dependent Nonlinear Model for GaN HEMTs GaN hemt的温度相关非线性模型

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-11-27 DOI: 10.1109/LMWT.2025.3635140

Jing Bai;Ao Zhang;Jianjun Gao

{"title":"A Temperature-Dependent Nonlinear Model for GaN HEMTs","authors":"Jing Bai;Ao Zhang;Jianjun Gao","doi":"10.1109/LMWT.2025.3635140","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3635140","url":null,"abstract":"In this letter, an improved temperature-dependent model for gallium nitride high-electron-mobility transistors (GaN HEMTs) based on the EEsof scalable nonlinear HEMT (EEHEMT) model is developed. To precisely capture the temperature-dependent characteristics of GaN HEMTs, several parameters of the original EEHEMT model are modified, and appropriate functional relationships between these parameters and ambient temperature are established. To validate the accuracy of the proposed model, the dc and RF characteristics of a GaN HEMT with a gate width of <inline-formula> <tex-math>$2times 25$ </tex-math></inline-formula> <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m are measured at <inline-formula> <tex-math>$- 40~^{circ }$ </tex-math></inline-formula>C, <inline-formula> <tex-math>$0~^{circ }$ </tex-math></inline-formula>C, <inline-formula> <tex-math>$40~^{circ }$ </tex-math></inline-formula>C, <inline-formula> <tex-math>$80~^{circ }$ </tex-math></inline-formula>C, and <inline-formula> <tex-math>$120~^{circ }$ </tex-math></inline-formula>C. Comparisons between the simulation data and measurement results demonstrate that the improved model can accurately reflect the trends in characteristics of the GaN HEMTs across the evaluated ambient temperature range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"605-608"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Pass Filter-Based Baseband Impedance Control Circuit for Broadband Concurrent Doherty Power Amplifier 基于低通滤波器的宽带并发多尔蒂功率放大器基带阻抗控制电路

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-08 DOI: 10.1109/LMWT.2025.3639451

Jinting Liu;Weimin Shi;Ke Liu;Yufeng Zang;Jun Hua;Gaoming Xu;Zhijiang Dai;Jingzhou Pang;Mingyu Li

引用次数: 0

IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2026-04-14 DOI: 10.1109/LMWT.2026.3680759

引用次数: 0

A 24–32-GHz In-Band Full-Duplex T/R Front End With Electrical Balance Duplexer in 65-nm CMOS 基于65纳米CMOS的24 - 32ghz带电平衡双工全双工收发前端

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-30 DOI: 10.1109/LMWT.2025.3647731

Ruitao Wang;Zhongxu Tian;Chenguang Li;Zhenbo Rao;Hong Zhang;Yan Wang

{"title":"A 24–32-GHz In-Band Full-Duplex T/R Front End With Electrical Balance Duplexer in 65-nm CMOS","authors":"Ruitao Wang;Zhongxu Tian;Chenguang Li;Zhenbo Rao;Hong Zhang;Yan Wang","doi":"10.1109/LMWT.2025.3647731","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3647731","url":null,"abstract":"This letter presents a broadband in-band full-duplex (IBFD) transceiver front end (FE) in 65-nm CMOS technology, which integrates an electrical balanced duplexer (EBD), a single-ended low-noise amplifier (LNA), and a differential power amplifier (PA) for 5G communication systems. Through the theoretical derivation of insertion loss and isolation of EBD, the co-design methodology of the IBFD FE is proposed. On this basis, a compact EBD with a hybrid Transformer structure is proposed to isolate the PA and LNA while providing impedance matching, thereby achieving excellent noise figure (NF) and output power. The proposed IBFD FE achieves a measured peak gain of 15.8 dB with a minimum NF of 5.9 dB for the receive path and a measured peak gain of 21.2 dB with a saturated output power (<inline-formula> <tex-math>${P}_{text {sat}}$ </tex-math></inline-formula>) of 15.7 dBm for the transmit path. The measured 3-dB gain bandwidth ranges from 24 to 32 GHz, corresponding to a fractional bandwidth (FBW) of 28.6%, while the isolation of the EBD is greater than 41.5 dB in the operating frequency band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"629-632"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pseudo-Hermitian Exceptional-Point-Based Wireless Sensing System With Heterogeneous Coupling 基于伪厄米异常点的异构耦合无线传感系统

IF 3.4

IEEE microwave and wireless technology letters Pub Date : 2026-04-01 Epub Date: 2025-12-17 DOI: 10.1109/LMWT.2025.3642799

Jinxu Wang;Xuanhao Zhang;Pengde Wu;Gaofeng Wang;Yuhua Cheng

{"title":"Pseudo-Hermitian Exceptional-Point-Based Wireless Sensing System With Heterogeneous Coupling","authors":"Jinxu Wang;Xuanhao Zhang;Pengde Wu;Gaofeng Wang;Yuhua Cheng","doi":"10.1109/LMWT.2025.3642799","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3642799","url":null,"abstract":"This letter presents a pseudo-Hermitian exceptional-point (EP) wireless sensor that exploits heterogeneous inductive–capacitive coupling to realize a third-order exceptional point (EP3) in a compact three-resonator trimer. Replacing the conventional gain-relay-loss inductive chain by a mixed inductive/capacitive link merges two LC tanks into a single physical entity, shrinking the footprint by about 50% while preserving the EP3 topology. A perturbative analysis shows that the eigenfrequency shift follows a cubic-root law when either the relay or loss resonator capacitance is perturbed, with the response to the former being approximately <inline-formula> <tex-math>$1.6times $ </tex-math></inline-formula> that to the latter—the only accessible node in some applications of conventional all-inductive trimers. The EP is experimentally identified by the zero crossing of Im(<inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula>) rather than the reflection dip, suppressing linewidth broadening and improving readout precision. Theoretical predictions of the EP3 response are quantitatively verified by both simulation and experiment. The proposed heterogeneous-coupling paradigm is fully compatible with standard printed circuit boards and customized readout-circuit processes, enabling additional footprint reduction for ultra-miniaturized sensor applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 4","pages":"641-644"},"PeriodicalIF":3.4,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0