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High-Efficiency Dual-Band Rectifier With Broadband at Lower Band for Energy Harvesting 高效双波段整流器与宽带在较低的波段能量收集
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-04-28 DOI: 10.1109/LMWT.2026.3685887
Yongchun Lu;Chuanfei Li;Yunsheng Guo
{"title":"High-Efficiency Dual-Band Rectifier With Broadband at Lower Band for Energy Harvesting","authors":"Yongchun Lu;Chuanfei Li;Yunsheng Guo","doi":"10.1109/LMWT.2026.3685887","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3685887","url":null,"abstract":"This letter presents a high-efficiency dual-band rectifier for the 2.45- and 5.8-GHz ISM bands. By integrating a frequency-selective diode array with a voltage doubler topology, the proposed design combines the advantages of both structures, achieving broadband rectification near 2.45 GHz while maintaining high power conversion efficiency (PCE) at 5.8 GHz. Measurements result at 10-dBm input power show the PCE exceeding 70% at both 2.45 and 5.65 GHz, with the PCE above 50% maintained over a broad frequency range of 1.65–3.85 GHz and the peak PCE of 82.1% at 2.45 GHz. Additionally, the PCE remains above 50% across an input power range of −3 to 12 dBm at 2.45 GHz. These results demonstrate that the proposed rectifier is suitable for radio frequency (RF) energy harvesting applications in the ISM band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1683-1686"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wideband Directional Coupler With Stable Coupling Factor Based on Spoof Surface Plasmon Polaritons 基于欺骗表面等离子激元极化的稳定耦合因子宽带定向耦合器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3690480
Jiawei Zheng;Yuhui Ren;Cheng Xu;Yiqing Li;Yingxi Liu;Handong Wu;Ke Li;Fuwei Wang
{"title":"A Wideband Directional Coupler With Stable Coupling Factor Based on Spoof Surface Plasmon Polaritons","authors":"Jiawei Zheng;Yuhui Ren;Cheng Xu;Yiqing Li;Yingxi Liu;Handong Wu;Ke Li;Fuwei Wang","doi":"10.1109/LMWT.2026.3690480","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3690480","url":null,"abstract":"This letter presents a broadband miniaturized directional coupler based on two parallel spoof surface plasmon polariton (SSPP) transmission lines (TLs). The design leverages the intrinsic dispersion and slow wave characteristics of SSPPs to significantly compress the guided wavelength, thereby achieving substantial miniaturization of the device. To balance the phase velocities of the odd and even modes in the coupled microstrip lines, the capacitive parasitic patches are introduced into the coupling region, resulting in a flatter coupling response. Furthermore, the lumped resistors are incorporated between the parasitic patches and the TL to enable flexible control of the coupling factor while simultaneously enhancing the directivity across a wide operating bandwidth. Experimental results demonstrate that the proposed coupler achieves a directivity of at least 14 dB over a 64% fractional bandwidth (2.64–5.1 GHz), with a coupling coefficient maintained at <inline-formula> <tex-math>$10~pm ~0.9$ </tex-math></inline-formula> dB. Owing to its wide bandwidth, high directivity, compact size, and stable coupling performance, the coupler meets the stringent requirements of modern wireless systems for high-performance components.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1579-1582"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Efficient Miniaturized Broadband Excitation Mechanism for Surface Waves-Inspired Line Waves 新型高效小型化宽频面波激励机制-线波激励
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-20 DOI: 10.1109/LMWT.2026.3693956
Rakesh Prasad;Ravi Anand;Anirban Sarkar;Animesh Biswas
{"title":"New Efficient Miniaturized Broadband Excitation Mechanism for Surface Waves-Inspired Line Waves","authors":"Rakesh Prasad;Ravi Anand;Anirban Sarkar;Animesh Biswas","doi":"10.1109/LMWT.2026.3693956","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3693956","url":null,"abstract":"In this letter, a unique broadband substrate integrated waveguide (SIW)-to-line-waves waveguide transition is presented. The line-waves waveguide having singular field enhancement between the boundaries of complementary metasurfaces is designed for upper Ku- and K-band operations. The proposed arrangements leverage the grounded coplanar waveguide (GCPW)-fed SIW, the exponentially tapered microstrip line (ETML), and the complementary metasurfaces to excite the edge-confined line waves. The arrangement is analytically studied and validated using numerical simulation to reduce the insertion loss attributed mainly to modal field inconsistency between the SIW and the line-wave waveguide. As a proof-of-concept, the proposed line-waves waveguide prototyping and its experimental characterization are confirmed to demonstrate an excellent return loss > 15 dB and insertion loss < 1 dB over a broad fractional bandwidth of more than 57% from 15 to 27 GHz. The proposed idea can be generalized to an open-waveguide structure for generating highly robust transmission.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1619-1622"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mixed-Domain Predistortion of RF Power Amplifiers Based on a Wiener Model 基于Wiener模型的射频功率放大器混合域预失真
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3693000
Tommaso Cappello;Md. Samiul Islam Borno;Qing Wan
{"title":"Mixed-Domain Predistortion of RF Power Amplifiers Based on a Wiener Model","authors":"Tommaso Cappello;Md. Samiul Islam Borno;Qing Wan","doi":"10.1109/LMWT.2026.3693000","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3693000","url":null,"abstract":"This letter presents a mixed-domain predistortion (MPD) architecture for RF power amplifiers (PAs) based on a Wiener model targeting memory effects reduction. The linear part of the MPD is realized in the digital baseband with a transversal filter, while the nonlinear part is implemented with an analog predistortion (APD) circuit. With this architecture, the digital signal processors, digital-to-analog converters, and upconverters can operate at the original signal bandwidth. The MPD performance is evaluated using normalized root mean square error (NRMSE) and error vector magnitude (EVM) metrics. Compared with a fully digital Wiener digital predistortion (DPD), the MPD achieves comparable NRMSE for 50–400-MHz signal bandwidths while providing up to a 10% point improvement in NRMSE relative to a standalone APD. The MPD is validated using a 5G 100-MHz 256-QAM signal, demonstrating an EVM improvement of up to 16 dB for the same output power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1655-1658"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11526831","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Considerations and Methods on the Design of Sub-THz Amplifiers in SiGe BiCMOS Technology SiGe BiCMOS技术中次太赫兹放大器设计的思考与方法
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-07 DOI: 10.1109/LMWT.2026.3685734
Aniello Franzese;Batuhan Sutbas;Thomas Mausolf;Muh-Dey Wei;Renato Negra;Corrado Carta
{"title":"Considerations and Methods on the Design of Sub-THz Amplifiers in SiGe BiCMOS Technology","authors":"Aniello Franzese;Batuhan Sutbas;Thomas Mausolf;Muh-Dey Wei;Renato Negra;Corrado Carta","doi":"10.1109/LMWT.2026.3685734","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3685734","url":null,"abstract":"This letter presents the design methodology and experimental characterization of subterahertz (sub-THz) amplifiers. A comparative study of amplifier topologies and the design of one of the first stacked common-base common-base (CB–CB) configuration above 250 GHz is reported. A differential CB–CB topology is proposed and optimized through layout techniques that minimize parasitic inductance. Capacitors are analyzed to enhance the RF performance, with metal–oxide–metal (MOM) devices offering a superior quality (<bold>Q</b>) factor at sub-THz frequencies. Finally, a three-stage sub-THz amplifier has been designed and characterized, resulting in one of the first silicon CB–CB amplifiers operating above 250 GHz to date.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1663-1666"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeter-Wave Limiter Based on GaN MMIC Technology 基于GaN MMIC技术的毫米波限制器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3692698
Xiaolin Hao;Guodong Gu;Hongyu Guo;Xubo Song;Lisen Zhang;Jianjun Gao;Feifei Liu;Jian Dai;Yuanjie Lv;Cui Yu;Ao Zhang;Zhihong Feng
{"title":"Millimeter-Wave Limiter Based on GaN MMIC Technology","authors":"Xiaolin Hao;Guodong Gu;Hongyu Guo;Xubo Song;Lisen Zhang;Jianjun Gao;Feifei Liu;Jian Dai;Yuanjie Lv;Cui Yu;Ao Zhang;Zhihong Feng","doi":"10.1109/LMWT.2026.3692698","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3692698","url":null,"abstract":"In this work, the high-power millimeter-wave limiter based on a gallium nitride (GaN) quasi-vertical structure Schottky barrier diode (SBD) is proposed and validated in the range of 30–36 GHz. The high-doping concentration and thin thickness of the n-layer GaN can effectively reduce the <sc>on</small>-resistance of GaN SBD, thereby reducing the insertion loss of limiters. The limiter utilizes GaN MMIC technology to enhance the consistency of multistage circuit manufacturing. In addition, the limiter adopts a three-stage structure design and combines with the power division structure to optimize the power handling capability of the first-stage limiter, further improving the overall system output power capacity. The insertion loss of the limiter is less than 2 dB within the frequency range of 30–36 GHz. This limiter can withstand a pulse input power of 20 W without burning out. The limiter based on GaN SBD exhibits advantages in high frequency and high power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1635-1638"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Symmetrical Balun-Based E-Band FMCW Radar Receiver With 4.4--6.4-dB Noise Figure in 65-nm CMOS 基于对称balun的噪声系数为4.4—6.4 db的65纳米CMOS e波段FMCW雷达接收机
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-19 DOI: 10.1109/LMWT.2026.3693279
Quanyong Li;Jingwen Xu;Jiangbo Chen;Shengjie Wang;Wenyan Zhao;Gaopeng Chen;Nayu Li;Xiaokang Qi;Chunyi Song;Zhiwei Xu
{"title":"A Symmetrical Balun-Based E-Band FMCW Radar Receiver With 4.4--6.4-dB Noise Figure in 65-nm CMOS","authors":"Quanyong Li;Jingwen Xu;Jiangbo Chen;Shengjie Wang;Wenyan Zhao;Gaopeng Chen;Nayu Li;Xiaokang Qi;Chunyi Song;Zhiwei Xu","doi":"10.1109/LMWT.2026.3693279","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3693279","url":null,"abstract":"This letter presents a 76–81-GHz frequency-modulated continuous-wave (FMCW) radar receiver (RX) consisting of a low-noise amplifier (LNA), a zero-intermediate-frequency (IF) mixer with a transimpedance amplifier (TIA), and an analog baseband (BB) in a 65-nm CMOS process. A novel symmetrical balun technique is proposed to generate phase-matched differential signals at the input—with simulated amplitude and phase imbalances below 3 dB and 1°, respectively—optimizing the noise figure (NF) of the LNA. Measurements show that the RX channel achieves an NF of 4.4–6.4 dB with a conversion gain (CG) of up to 70 dB in 76–81 GHz. In summary, this receiver occupies 1.13 mm<sup>2</sup> with an average power consumption of 55.0 mW per channel.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1691-1694"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 80--140 GHz Double-Balanced Frequency Doubler With 6.5%--15.9% Efficiency 80- 140 GHz双平衡倍频器，效率为6.5%- 15.9%
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-04 DOI: 10.1109/LMWT.2026.3687584
Zihan Zhang;Junjie Zhang;Zi’ang Xu;Yutong Sun;Minghao Wang;Jian Guo
{"title":"An 80--140 GHz Double-Balanced Frequency Doubler With 6.5%--15.9% Efficiency","authors":"Zihan Zhang;Junjie Zhang;Zi’ang Xu;Yutong Sun;Minghao Wang;Jian Guo","doi":"10.1109/LMWT.2026.3687584","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3687584","url":null,"abstract":"This letter presents a novel waveguide-based double-balanced frequency doubler based on GaAs Schottky diodes, especially suitable for terahertz (THz) application, to enhance the output power without compromising its bandwidth or efficiency. Inline waveguide Y-junctions are used as input and output baluns to split the input signal and re-combine output signals from two single-balanced doublers. These two doublers adopt the Erickson configuration with two pairs of anti-series diodes, with one pair connected with a common anode and the other with a common cathode. Its perfect symmetry ensures outstanding balance, leading to high efficiency power combining and high suppression of odd-order harmonics. An 80–140 GHz ultra-wideband doubler was fabricated and tested to verify this concept. The measured results indicate that this doubler has a frequency conversion efficiency of 6.5%–15.9% from 80 to 140 GHz (fractional bandwidth of 54.5%) and an output power of 8.1–20.1 mW. The third harmonic suppression across the operating bandwidth exceeds 28.5 dBc.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1615-1618"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149131524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Cylindrical Explicit and Unconditionally Stable FDTD Method Involving Fine Structure 涉及精细结构的快速圆柱显式无条件稳定FDTD方法
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-12 DOI: 10.1109/LMWT.2026.3688665
Sihan Zhao;Xinbo He;Bing Wei
{"title":"Fast Cylindrical Explicit and Unconditionally Stable FDTD Method Involving Fine Structure","authors":"Sihan Zhao;Xinbo He;Bing Wei","doi":"10.1109/LMWT.2026.3688665","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3688665","url":null,"abstract":"A fast cylindrical explicit and unconditionally stable finite-difference time-domain (FDTD) method that accommodates fine structures is proposed. This method introduces a general domain decomposition strategy derived from an analysis of the spectral radius of cylindrical grids. This strategy applies to a wide range of grid discretizations, especially in cases involving fine grids. By doing so, all unstable modes can be obtained by solving the eigenvalue problem in one subdomain, significantly reducing the computational complexity. Two explicit field-iteration schemes are also presented. In addition, the boundary fields between subdomains require no additional correction. Numerical results demonstrate the validity and efficiency of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1543-1546"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power Vector Modulator for Enabling Full-Duplex on 6G Base Stations 实现6G基站全双工的大功率矢量调制器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-10-01 Epub Date: 2026-03-01 DOI: 10.1109/LMWT.2026.3687489
Will M. Vu;Kenneth E. Kolodziej
{"title":"High-Power Vector Modulator for Enabling Full-Duplex on 6G Base Stations","authors":"Will M. Vu;Kenneth E. Kolodziej","doi":"10.1109/LMWT.2026.3687489","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3687489","url":null,"abstract":"The in-band full-duplex (IBFD) can increase the spectral efficiency of existing radio systems by enabling co-located transmitters and receivers to operate at the same frequency, at the same time. Base stations (BSs) with IBFD can double throughput and reduce latency, which are improvements critical to the deployment of sixth-generation (6G) communications. However, mitigating direct-path self-interference (SI) for BS transmit powers in the hundreds of watts requires IBFD cancelers that can handle high power levels. This letter proposes and demonstrates a novel vector modulator design utilizing p-i-n diode-controlled reflections to enable wideband modulation at high input power and with minimal loss. The vector modulator concept is fabricated and implemented in an SI canceler, and is shown to be able to perform >40-dB cancellation for >100-W output power transceivers across the 1.4–3.8-GHz communications spectrum. Furthermore, >100 dB of isolation is demonstrated in over-the-air (OTA) measurements with cellular antennas.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 10","pages":"1627-1630"},"PeriodicalIF":3.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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