{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3547168","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3547168","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10967026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bangjie Zheng;Zhiqun Cheng;Zhiwei Zhang;Hao Jin;Tingwei Gong;Ruizhe Zhang;Chao Le
{"title":"Design of an Ultrawideband MMIC Power Amplifier Based on Mixed Operation Mode","authors":"Bangjie Zheng;Zhiqun Cheng;Zhiwei Zhang;Hao Jin;Tingwei Gong;Ruizhe Zhang;Chao Le","doi":"10.1109/LMWT.2025.3549836","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3549836","url":null,"abstract":"This letter presents a novel ultrabroadband, high-efficiency MMIC power amplifier (PA). To reduce performance degradation caused by nonconvergent impedance in high-frequency ultrawideband designs, the extended continuous Class-GF mode (ECCGF) and Class-GF-1 (ECCGF-1) mode is integrated. Then the impedance in the high-frequency range is aligned with the ECCGF-1 mode, while lower frequency impedance corresponds to the ECCGF mode. A three-section L-C matching network is used to satisfy these requirements, with parameter derivations provided. In addition, an L-R series structure is implemented to adjust the input harmonic component, and the impact of L on both the harmonic component and PAE is analyzed. The proposed high-efficiency wideband MMIC PA, fabricated using a 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaN HEMT process, achieves a saturated output power of 44.2–45.8 dBm over 6–18 GHz, with a gain of 18.1–21.1 dB and a PAE of 24.9%–33.6%. The figure of merit (FOM) reaches 1.19, indicating a significant improvement compared with existing works.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"605-608"},"PeriodicalIF":0.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultrawideband CMOS VGA With 2.23 dB NFmin Using Coupled-ML Neutralization","authors":"Jin-Fa Chang","doi":"10.1109/LMWT.2025.3542629","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3542629","url":null,"abstract":"This study reports a low power-dissipation (PD) and low noise-figure (NF) ultrawideband CMOS variable-gain amplifier (VGA). The VGA uses coupled microstrip-line (CML) neutralization, body-floating of transistor M1, and multiple inductive compensations, featuring complementary common-source (CCS) input and common-source (CS) output stages to achieve low PD and NF values and a wide bandwidth (BW). Gain flatness in the ultrawideband VGA is achieved by fitting the coupling between the CML (with the electrical length of a compensated gain-flatness inductor CL). The VGA with a PD of 5.85 mW achieves excellent S21 BW of 32.3 GHz (2.9–35.2 GHz), maximum S21 of 11.9 dB, minimum NF of 2.43 dB, and average NF of 4.11 dB for 5G FR2 and 6G FR3. The input 1-dB compression point of the VGA is −11.5 dBm. Moreover, the VGA with a chip area of 0.356 mm2 attains a decent gain tuning range of 20 dB (−3.8 to 16.2 dB) under 1.35 dB/step for 5G NR band N257.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"609-612"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Ridge WG SSPP Bandpass Filter With Lower Transmission Zero and Extended Upper Stopband","authors":"Jian-Xin Chen;Peng-Xu Zhu;Xu Shi;Wei Qin","doi":"10.1109/LMWT.2025.3548991","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3548991","url":null,"abstract":"This article proposes a novel design method for introducing a lower transmission zero (TZ) in a ridge waveguide (WG) spoof surface plasmon polariton (SSPP) bandpass filter (BPF). Initially, the inverted T-shaped slots are etched on the central ridge to construct the SSPP and then design a wideband BPF, and the upper and lower cutoff frequencies of passband are determined by the SSPP and double gratings (DGs) on both sides of the ridge WG. To improve the rejection roll-off of the lower stopband, a pair of folded slots are etched at both ends of the ridge to form a quarter-wavelength (<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>/4) resonance for introducing a TZ below the passband without increasing the size. Additionally, the stopband of the proposed SSPP filter can be extended by optimizing the DGs to suppress the higher order modes of the SSPP. To demonstrate this method, a ridge WG BPF was fabricated and measured. The measurement results indicate that the filter possesses favorable frequency selectivity and a wide stopband.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"521-524"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Miniaturized 2.49-GHz Low-Phase-Noise Temperature-Stable SAW Oscillator","authors":"Tangfei Kang;Haoshen Zhu;Jiajian Liang;Bin Jia;Wenquan Che;Quan Xue","doi":"10.1109/LMWT.2025.3546238","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546238","url":null,"abstract":"In this letter, a 2.49-GHz temperature-stable oscillator is implemented using a temperature-compensated surface acoustic wave (TC-SAW) resonator. The cross-coupled topology is adopted to suppress power supply variations and enhance output swing. The TC-SAW with a temperature-compensated layer is used to improve the temperature stability of the oscillator. Measurement results show that the oscillator achieves a phase noise of 145 dBc/Hz@1 MHz offset with a figure of merit (FoM) of 215 dB. The oscillator consumes a dc power of 0.6 mW under a supply voltage of 1 V. Over a temperature range of <inline-formula> <tex-math>$- 40~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>C, the oscillator’s frequency drift is less than 248 ppm and within 90 ppm over a range of <inline-formula> <tex-math>$- 40~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$65~^{circ }$ </tex-math></inline-formula>C.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"601-604"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo
{"title":"A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier","authors":"Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo","doi":"10.1109/LMWT.2025.3546234","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546234","url":null,"abstract":"Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a <inline-formula> <tex-math>$0.25~mu $ </tex-math></inline-formula>m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"613-616"},"PeriodicalIF":0.0,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Wireless Passive Frequency Selective Surface Strain Sensor With Low Transverse Sensitivity","authors":"Zhaofeng Sun;Kaituo Wu;Bin Peng;Shiwei Zhou;Dingkang Peng;Shengke Xu;Wanli Zhang","doi":"10.1109/LMWT.2025.3547819","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3547819","url":null,"abstract":"Due to its wireless and passive operating features, strain sensors based on frequency selective surface (FSS) are garnering more and more attentions. Unfortunately, current FSS strain sensors are sensitive to both longitudinal and transverse strains, which is unfavorable in practical applications. In this work, a miniaturized FSS strain sensor based on a meander line aperture structure is proposed and investigated in terms of the strain dependence of its resonances. The experimental results indicate that the resonance frequency of the FSS sensor reduces from 14.691 to 14.658 GHz when the longitudinal tensile force increases from 0 to 40 N. Similarly, the resonance frequency of the FSS sensor reduces from 14.6374 to 14.6342 GHz when the transverse tensile force increases from 0 to 40 N. The FSS sensor’s sensitivity is 5.96 kHz/<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula> for longitudinal strain and 0.578 kHz/<inline-formula> <tex-math>$mu varepsilon $ </tex-math></inline-formula> for transverse strain, indicating that the FSS sensor is only sensitive to longitudinal strain and the influence of the transverse strain can be omitted.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"545-548"},"PeriodicalIF":0.0,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhanced Compact RF Energy Harvesting System Using Two-Port Network of Antenna","authors":"Seong-Jin Kim;Dong-Min Seo;Ji-Hoon Lee;Sol Kim;Jong-Won Yu","doi":"10.1109/LMWT.2025.3543347","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3543347","url":null,"abstract":"This letter presents a method to enhance a compact RF energy harvesting (RFEH) system using a two-port network of an antenna. Typically, RFEH rectennas, comprising an antenna and a rectifier, are assembled after designing independently, making performance evaluation challenging due to the antenna’s one-port configuration. By adapting the antenna to a two-port network, direct measurements of <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> and conversion efficiency were enabled. A compact RFEH system operating at 0.9 GHz was implemented, and experimental results demonstrated that the proposed method improved efficiency through optimized matching circuit adjustments.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"625-628"},"PeriodicalIF":0.0,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Wide-Range Hybrid Radio Frequency Divider","authors":"Roger Yubtzuan Chen;Zong-Yi Yang;Shi-Xin Luo","doi":"10.1109/LMWT.2025.3546637","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3546637","url":null,"abstract":"Incorporating an input direct injection into a versatile compact oscillator featuring a switchable resistive-loaded cross-coupled pair, this work presents a low-cost radio frequency divider (FD) with a wide input range, attributing to its hybrid multimode operations. First-cut design guides, exclusively in terms of its key component parameters, on implementing a wide inductive-band span and choosing its optimal operating frequency with the peak quality factor (QF) are provided. The measured results of the RF FD in 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m CMOS show a wide input-range range (<inline-formula> <tex-math>$approx 180$ </tex-math></inline-formula>%), while drawing 2.366 mA in low band (LB) and 4.533 mA in high band (HB), respectively, from <inline-formula> <tex-math>${V}_{mathrm { DD}} =1text {.}5~text {V}$ </tex-math></inline-formula>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"621-624"},"PeriodicalIF":0.0,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}