IEEE microwave and wireless technology letters最新文献_第10页

A Switched Flexible Dual-Mode Bandpass Filter Tuned by Organic Electrochemical Transistor 有机电化学晶体管调谐的开关柔性双模带通滤波器

IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3507753

Zhiliang Wang;Xiang Li;Chen Shen;Xiang Zeng;Peng Guo;Lin Qin;Zhenguo Wang

引用次数: 0

An Analytical Model for Calculating the Shielding Effectiveness of Dielectric-Embedded Multilayer Metal Meshes 介质嵌套多层金属网屏蔽效能的解析计算模型

IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3507077

Meng Chen;Xinbo He;Bing Wei

{"title":"An Analytical Model for Calculating the Shielding Effectiveness of Dielectric-Embedded Multilayer Metal Meshes","authors":"Meng Chen;Xinbo He;Bing Wei","doi":"10.1109/LMWT.2024.3507077","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507077","url":null,"abstract":"The transmission characteristics of the multilayer metal meshes are often studied using numerical methods, which consume a significant amount of computational time and hardware resources. Analytical models can quickly obtain electromagnetic properties, but currently, there are few analytical algorithms for researching dielectric-embedded multilayer metal meshes. In this letter, an analytical model for the wideband shielding effectiveness of infinite dielectric-embedded multilayer metal meshes is presented. By modifying the multiple reflection loss in the multiconductor shielding theory and the total shielding effectiveness after filling multilayer metal meshes with the dielectric, it is possible to analyze the transmission characteristics of both multilayer metal meshes and dielectric-embedded multilayer metal meshes. The results show that the modified model provides good accuracy for the shielding effectiveness of infinite multilayer metal meshes and dielectric-embedded multilayer metal meshes, which is consistent with the results of computer simulation technology (CST) in a wide frequency range. Furthermore, the calculation of the presented analytical model is less than 3000 of the numerical algorithm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"141-144"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Compact Interlaced-Double-Ridge Waveguide Balanced Filter With Wideband CM Suppression 具有宽带CM抑制的紧凑型交错双脊波导平衡滤波器

IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3510760

Cheng-Yang Zhang;Xu Shi;Ya-Hui Zhu;Ying Xue;Jian-Xin Chen

{"title":"A Compact Interlaced-Double-Ridge Waveguide Balanced Filter With Wideband CM Suppression","authors":"Cheng-Yang Zhang;Xu Shi;Ya-Hui Zhu;Ying Xue;Jian-Xin Chen","doi":"10.1109/LMWT.2024.3510760","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3510760","url":null,"abstract":"In this letter, a novel compact balanced bandpass filter (BPF) based on an interlaced-double-ridge waveguide (IDRWG) resonator is proposed. By modifying the two ridges of the traditional double-ridge waveguide (DRWG) resonator to an interlaced-ridge structure, the IDRWG resonator achieves a lower fundamental frequency (<inline-formula> <tex-math>$f_{r0}$ </tex-math></inline-formula>), implying that a compact filter can be constructed. Here, the anti-phase property of the two interlaced ridges is maintained. Accordingly, a compact IDRWG balanced filter with low differential-mode (DM) loss can be realized. At the same time, the first harmonic (<inline-formula> <tex-math>$f_{r1}$ </tex-math></inline-formula>) of the IDRWG resonator acts as a common-mode (CM) resonance. By optimizing the dimensions of the resonator, the ratio of <inline-formula> <tex-math>$f_{r1}$ </tex-math></inline-formula>/<inline-formula> <tex-math>$f_{r0}$ </tex-math></inline-formula> can be enlarged, leading to wideband CM suppression of the balanced filter. Demonstrated results show good agreement between simulated and measured performance, with the balanced BPF centered at 2.5 GHz exhibiting about 20% bandwidth, insertion loss (IL) of <0.37>60 dB from 0 to 8.2 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"169-172"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Broadband Digital Power Amplifier With 1-dB Psat Bandwidth of 5.5–9.5 GHz 一种1db Psat带宽为5.5-9.5 GHz的宽带数字功率放大器

IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3509422

Hao Heng;Lanxin Jia;Zonglin Ye;Kailei Wang;Qian Xie;Jun Zhou;Zheng Wang

引用次数: 0

IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息

IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475169

引用次数: 0

IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版

IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3475171

引用次数: 0

A Gradual-Width High-Q Self-Resonant Coil Based on Coplanar Waveguide 基于共面波导的渐宽高q自谐振线圈

IEEE microwave and wireless technology letters Pub Date : 2024-12-05 DOI: 10.1109/LMWT.2024.3506987

Zixuan Yi;Kaiyu Yang;Xue-Xia Yang;Meiling Li;Dan Zeng

引用次数: 0

Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling 探索双栅射频GaN hemt的开关行为：表征和建模

IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3507045

Mohammad Sajid Nazir;Praveen Dwivedi;Ahtisham Pampori;Yun-Yueh Hsieh;Min-Li Chou;Yogesh Singh Chauhan

{"title":"Exploring Switching Behavior of Dual-Gate RF GaN HEMTs: Characterization and Modeling","authors":"Mohammad Sajid Nazir;Praveen Dwivedi;Ahtisham Pampori;Yun-Yueh Hsieh;Min-Li Chou;Yogesh Singh Chauhan","doi":"10.1109/LMWT.2024.3507045","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507045","url":null,"abstract":"This letter presents a comprehensive performance analysis and both linear and nonlinear modeling of dual-gate gallium nitride (GaN)-on-silicon (Si) depletion mode high electron mobility transistor (HEMT) devices across various switch topologies. We evaluate large-signal behavior to assess power handling capabilities in three configurations: series, shunt, and single-pole single-throw (SPST) at 6.5 GHz. For the SPST switch at 500 MHz, measurements reveal an <sc>on</small>-resistance (<inline-formula> <tex-math>$R_{text {on}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math>$2.7~Omega {cdot }text {mm}$ </tex-math></inline-formula>, <sc>off</small>-capacitance (<inline-formula> <tex-math>$C_{text {off}}$ </tex-math></inline-formula>) of 53.3 fF, peak insertion loss (IL) of 0.6 dB, and isolation (ISO) of 53.3 dB. These metrics are also evaluated across six different peripheries, ranging from NF<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> W =400 to <inline-formula> <tex-math>$6400~mu $ </tex-math></inline-formula> m. In addition, we introduce and validate a surface potential-based modeling framework for dual-gate RF GaN HEMTs using <sc>on</small>-wafer dc measurements, common-gate S-parameters, and large-signal measurements. Furthermore, we explore the potential single-pole-double-throw (SPDT) design by utilizing SPST switch S2P files in conjunction with model results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"221-224"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Generalized Design Approach for Asymmetric Coupled Line Couplers With Arbitrary Terminal Real Impedances and Arbitrary Power Division Ratio 具有任意终端实际阻抗和任意功率分割比的非对称耦合线耦合器的通用设计方法

IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3488738

Yan Zhang;Bin XIa;Jun-Fa Mao

引用次数: 0

Microwave Sensor Array Based on Differential Mode Detection Strategy 基于差模检测策略的微波传感器阵列

IEEE microwave and wireless technology letters Pub Date : 2024-12-04 DOI: 10.1109/LMWT.2024.3505961

Leijun Xu;Fanfan Li;Shengqi Zhang;Xue Bai;Qiang Wang;Jianfeng Chen

{"title":"Microwave Sensor Array Based on Differential Mode Detection Strategy","authors":"Leijun Xu;Fanfan Li;Shengqi Zhang;Xue Bai;Qiang Wang;Jianfeng Chen","doi":"10.1109/LMWT.2024.3505961","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3505961","url":null,"abstract":"A novel microwave sensor array utilizing a differential-mode detection strategy is introduced for localized material defect detection. Two types of modified split-ring resonators (SRRs) with unloaded Q-factor above 437 and 290, respectively, are utilized to construct the basic differential sensing elements. By arranging these elements with different sizes, a sensor array can be realized. Since the distinct resonant frequency of each element, multiple transmission zeros are included in the working range. Each resonance zero corresponds to an independent region of the material under test (MUT). Any local defect will cause a split in the corresponding resonant frequency. Therefore, detection results can be obtained simply by observing the split points in the resonance spectrum, eliminating the need for further calibration. This letter presents the coupling mechanisms of the proposed two basic sensing units and the operating principle of the proposed sensor array. A prototype operating from 2.4 to 4.6 GHz with five independent differential units has been designed and fabricated. Three different samples with local defects were used for validation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0