IEEE microwave and wireless technology letters最新文献_第10页

A New Parallel Frequency-Domain Finite-Difference Algorithm Using Multi-GPU 使用多 GPU 的新型并行频域有限差分算法

IEEE microwave and wireless technology letters Pub Date : 2024-06-24 DOI: 10.1109/LMWT.2024.3414598

Yijing Wang;Xinbo He;Bin Wei

引用次数: 0

A Wideband CMOS Active Phase Shifter Using a Transformer-Based RL Polyphase Filter 使用基于变压器的 RL 多相滤波器的宽带 CMOS 有源移相器

IEEE microwave and wireless technology letters Pub Date : 2024-06-21 DOI: 10.1109/LMWT.2024.3413861

Taotao Xu;Ke Long;Haoshen Zhu;Cao Wan;Shuai Deng;Pei Qin;Wenquan Che;Quan Xue

引用次数: 0

A 16.5-dBm D-Band Eight-Way Power Amplifier Utilizing Cascaded Transformers in 40-nm Bulk CMOS 在 40 纳米 Bulk CMOS 中利用级联变压器实现 16.5 分贝 D 波段八路功率放大器

IEEE microwave and wireless technology letters Pub Date : 2024-06-20 DOI: 10.1109/LMWT.2024.3403950

Van-Son Trinh;Jeong-Moon Song;Jung-Dong Park

{"title":"A 16.5-dBm D-Band Eight-Way Power Amplifier Utilizing Cascaded Transformers in 40-nm Bulk CMOS","authors":"Van-Son Trinh;Jeong-Moon Song;Jung-Dong Park","doi":"10.1109/LMWT.2024.3403950","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3403950","url":null,"abstract":"We present a D-band eight-way power amplifier (PA), which achieves the saturated output power (\u0000<inline-formula> <tex-math>$P_{mathrm {sat}}$ </tex-math></inline-formula>\u0000) of 16.5 dBm in 40-nm bulk CMOS. The proposed D-band PA consists of four push-pull PA units with three stages, whose active device sizes are gradually tapered from the output to the input optimal power efficiency. A cascaded transformer-transformer (balun) structure was employed at the output of the PA unit to avoid self-resonance with an improved balun performance at the D-band. The power combiner/splitter is comprised of microstrip transmission lines (MSTLs) to combine the power of the four PA units in the current domain. The fabricated prototype has a chip size of 0.72 mm2 with a core size of 0.46-mm2 excluding pads. The measured PA achieved a power gain of 14.5 dB with the 3-dB gain bandwidth of 18 GHz (121–139 GHz), a peak PAE of 7.2%, and a saturated output power (\u0000<inline-formula> <tex-math>$P_{mathrm {sat}}$ </tex-math></inline-formula>\u0000) of 16.5 dBm, which demonstrates the highest output power among the recently reported D-band PAs in bulk CMOS.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1019-1022"},"PeriodicalIF":0.0,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable 3 × 3 Nolen Matrix Network for Power-Saving Phased Array 用于省电相控阵的可调式 3 × 3 诺伦矩阵网络

IEEE microwave and wireless technology letters Pub Date : 2024-06-20 DOI: 10.1109/LMWT.2024.3413721

Hanxiang Zhang;Han Ren;Powei Liu;Hao Yan;Bayaner Arigong

{"title":"Tunable 3 × 3 Nolen Matrix Network for Power-Saving Phased Array","authors":"Hanxiang Zhang;Han Ren;Powei Liu;Hao Yan;Bayaner Arigong","doi":"10.1109/LMWT.2024.3413721","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3413721","url":null,"abstract":"In this article, a tunable Nolen matrix with small phase tuning range phase shifters and simple control is presented. The proposed circuit topology is constructed from \u0000<inline-formula> <tex-math>$3times 3$ </tex-math></inline-formula>\u0000 Nolen matrix embedded with three tunable phase shifters with small tuning range of 0°–120°. For each input port excitation in this proposed network, a continuous 120° tunable progressive phase difference is obtained at the output ports, and the full 360° tunable phase progression is achieved by exciting all three input ports. Most importantly, all tuning range relaxed phase shifters are controlled simultaneously by only two-channel dc voltages to achieve full progressive phase tuning range, which can simplify the control method of beam steering. Compared to the conventional feeding matrix, the proposed design achieves a flexible progressive phase, compact size, easy control, and low power consumption. The theoretical analysis is carried out for the proposed circuit topology, and the closed-form equations are derived to minimize the phase shifter’s tuning range and reduce the control complexity. To verify the proposed design concept, a prototype tunable Nolen matrix operating at 5.8 GHz is designed and tested, and the experimental results agree well with simulation and theoretical analysis.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"995-998"},"PeriodicalIF":0.0,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 0.38–67-GHz Directional Coupler With GSG Interface for Compact VNA System 用于紧凑型 VNA 系统的带 GSG 接口的 0.38-67-GHz 定向耦合器

IEEE microwave and wireless technology letters Pub Date : 2024-06-20 DOI: 10.1109/LMWT.2024.3413154

Tingting Sun;Ming Guo;Zhen Wang;Guanghua Shi;Hongjun Li;Qian Yang;Anxue Zhang;Cheng Guo

{"title":"A 0.38–67-GHz Directional Coupler With GSG Interface for Compact VNA System","authors":"Tingting Sun;Ming Guo;Zhen Wang;Guanghua Shi;Hongjun Li;Qian Yang;Anxue Zhang;Cheng Guo","doi":"10.1109/LMWT.2024.3413154","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3413154","url":null,"abstract":"This letter introduces an ultrawideband directional coupler with ground-signal-ground (GSG) interfaces that can be seamlessly integrated with the monolithic microwave integrated circuit (MMIC) mixers within a compact 67-GHz vector network analyzer (VNA) system. The coupler is fabricated through metal copper additive manufacturing process. To mitigate the impact of the polymer strips on the coupler’s raw directivity, the coupled lines were designed with a special impedance function, which effectively increases the average spacing between them, so the parasitic couplings from the polymer can be reduced. Additionally, enhancements to the polymer fabrication process now allow for the supporting strips to be meshed, further enhancing the directivity of the coupler. The fabricated coupler shows good performance in the operating frequency of 0.38–67 GHz, and the simulation results are in good agreement with the measured results: coupling of \u0000<inline-formula> <tex-math>$13.5~pm ~0.17$ </tex-math></inline-formula>\u0000 dB, insertion loss <3>13 dB, and directivity of >12 dB (>15 dB at 1.72–67 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"991-994"},"PeriodicalIF":0.0,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Low-Cost Reflection Oscillator Using Substrate Integrated Coaxial Line Technology 使用基底集成同轴线技术的低成本反射振荡器

IEEE microwave and wireless technology letters Pub Date : 2024-06-19 DOI: 10.1109/LMWT.2024.3412922

Saurabh Shukla;Soumava Mukherjee

引用次数: 0

56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching 采用局部背面蚀刻技术的 56% PAE 毫米波 SiGe BiCMOS 功率放大器

IEEE microwave and wireless technology letters Pub Date : 2024-06-14 DOI: 10.1109/LMWT.2024.3409149

Aniello Franzese;Batuhan Sutbas;Raqibul Hasan;Andrea Malignaggi;Thomas Mausolf;Nebojsa Maletic;Muh-Dey Wei;Han Zhou;Christian Fager;Corrado Carta;Renato Negra

{"title":"56% PAE mm-Wave SiGe BiCMOS Power Amplifier Employing Local Backside Etching","authors":"Aniello Franzese;Batuhan Sutbas;Raqibul Hasan;Andrea Malignaggi;Thomas Mausolf;Nebojsa Maletic;Muh-Dey Wei;Han Zhou;Christian Fager;Corrado Carta;Renato Negra","doi":"10.1109/LMWT.2024.3409149","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3409149","url":null,"abstract":"This letter presents a power amplifier (PA) with excellent power-added efficiency (PAE) for millimeter-wave (mm-wave) applications. The high efficiency is achieved by leveraging a local backside etching (LBE) process to enhance the quality factor (Q) of the output matching network. The PA was fabricated in a mature SiGe BiCMOS technology featuring heterojunction bipolar transistors (HBTs) having an \u0000<inline-formula> <tex-math>$ {f}_{T} / {f}_{max } $ </tex-math></inline-formula>\u0000 of 250/340 GHz. While the measured peak PAE is 56% at 24 and 25 GHz, the PA provides 16 dB of peak gain and a 3-dB bandwidth of 19 GHz ranging from 13.5 to 32.5 GHz, which makes the circuit well suited for multiple purposes, such as sensors, radars, 5G, and satellite communications. The maximum PAE exceeds 40% from 22 to 28 GHz, with a peak saturated power (\u0000<inline-formula> <tex-math>$ {P}_{text {sat}} $ </tex-math></inline-formula>\u0000) of 16.5 dBm at 25 GHz. To the best of authors’ knowledge, this PA achieves the highest PAE reported to date for silicon-based mm-wave amplifiers.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1023-1026"},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Memory-Efficient PITD Method for Multiscale Electromagnetic Simulations 用于多尺度电磁模拟的内存效率 PITD 方法

IEEE microwave and wireless technology letters Pub Date : 2024-06-13 DOI: 10.1109/LMWT.2024.3408457

Jiawei Wang;Minyu Mao;Ru Xiang;Huifu Wang;Haoyu Lian

引用次数: 0

An Ultracompact DC–20-GHz nMOS-Based CMOS Attenuator 基于 nMOS 的超小型 DC-20-GHz CMOS 衰减器

IEEE microwave and wireless technology letters Pub Date : 2024-06-13 DOI: 10.1109/LMWT.2024.3410669

Xiangyu Meng;Gaoyuan Zhao;Baoyong Chi

引用次数: 0

Single-Unit Multibit Phase Shifters Using Binary Multibit Susceptance Blocks 使用二进制多比特电感块的单比特多比特移相器

IEEE microwave and wireless technology letters Pub Date : 2024-06-13 DOI: 10.1109/LMWT.2024.3400834

Faisal Amin;Yun Liu;Yongjiu Zhao;Lingyun Liu

{"title":"Single-Unit Multibit Phase Shifters Using Binary Multibit Susceptance Blocks","authors":"Faisal Amin;Yun Liu;Yongjiu Zhao;Lingyun Liu","doi":"10.1109/LMWT.2024.3400834","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3400834","url":null,"abstract":"A novel approach for the implementation of single-unit multibit phase shifters (SUMBPSs) using binary multibit susceptance blocks (MBSBs) is presented. A single 50-\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 main transmission line (MTL) is symmetrically loaded with three binary MBSBs, each comprising M parallel open-circuited stubs and p-i-n diodes. The linear relationship between loaded susceptance and phase shift is established by leveraging the linearity of susceptances curves w.r.t. length of the MTL. The use of single MTL allows the realization of SUMBPSs in a compact, single-unit structure with lower insertion loss (IL), whereas the linear susceptance curves enable the application of the principle of superposition, achieving the required \u0000<inline-formula> <tex-math>$2^{M}$ </tex-math></inline-formula>\u0000 phase states with only \u0000<inline-formula> <tex-math>$3times M$ </tex-math></inline-formula>\u0000 stubs and switches, representing a significant reduction compared with other contemporary solutions. For validation, a 3-bit SUMBPS is developed, and measurement results are given.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"999-1002"},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0