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Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS” “40纳米CMOS变压器嵌入式网络gmax核心的d波段高增益低噪声放大器”的勘误表
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3515712
Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng
{"title":"Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”","authors":"Yu-Hsiang Wang;Yunshan Wang;Yu-Hsiang Cheng","doi":"10.1109/LMWT.2024.3515712","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515712","url":null,"abstract":"Presents corrections to the paper, Errata to “A D-Band High-Gain Low-Noise Amplifier With Transformer-Embedded Network Gmax-Core in 40-nm CMOS”.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"139-139"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835207","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors IEEE微波与无线技术通讯作者信息
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521603
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3521603","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521603","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835838","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS 65纳米CMOS中192 dbc /Hz峰值波形的宽带谐波整形压控振荡器
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3520965
Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue
{"title":"A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS","authors":"Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue","doi":"10.1109/LMWT.2024.3520965","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3520965","url":null,"abstract":"In this brief, a class-<inline-formula> <tex-math>$F_{23}$ </tex-math></inline-formula> voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic (<inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula>) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between <inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3f_{0}$ </tex-math></inline-formula> to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of <inline-formula> <tex-math>$0.198~text {mm}^{2}$ </tex-math></inline-formula>, the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"322-325"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing 用于差分微波传感的四分之一模欺骗局域表面等离子体
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522375
Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu
{"title":"Quarter-Mode Spoof Localized Surface Plasmons for Differential Microwave Sensing","authors":"Zijing Huang;Pengfei Sun;Guo Qing Luo;Leilei Liu","doi":"10.1109/LMWT.2024.3522375","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522375","url":null,"abstract":"In this letter, a differential microwave sensor designed based on quarter-mode spoof localized surface plasmons (SLSPs) is presented. The differential sensor consists of two independent sensors each exciting a symmetrically structured resonance unit, and the size of the differential sensor is reduced by a factor of one by the composition of two independent quarter modes. A prototype of this sensor has been fabricated, and measurements have been performed on dielectric substrates with different dielectric constants and on ethanol solutions with different concentrations. The experimental results show that the sensor has an average relative sensitivity of 1.64% and 0.18% when measuring solids and liquids respectively. This work is applicable to the detection of dielectric constant of solid materials and liquid concentration in industry.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"270-273"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network 基于阻抗调节网络的增强动态功率范围的高效宽带射频整流器
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3523763
Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang
{"title":"High-Efficiency Wideband RF Rectifier With Enhanced Dynamic Power Range Based on Impedance Regulation Network","authors":"Pei Ming Wang;Shao Fei Bo;Jun-Hui Ou;Xiu Yin Zhang","doi":"10.1109/LMWT.2024.3523763","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3523763","url":null,"abstract":"A high-efficiency rectifier designed to operate across a broad range of frequencies and power levels is proposed in this letter. The rectifier features a dual-branch impedance regulation network (IRN), two subrectifiers, and a load resistor. The IRN is used to construct specific impedance relationship between the upper and lower branches at different frequencies and power levels, demonstrating good matching performance across a wide bandwidth and dynamic power range (DPR). Theoretical analysis is carried out, and a prototype is implemented, fabricated, and measured for verification. At 1.8 GHz, the optimal efficiency is found over 70% at an input power level of 8 dBm. The frequency range of the prototype is from 1.4 to 2.5 GHz (beyond 70% of the optimal efficiency), and the calculated DPR of the prototype is 18 dB (from −5 to 13 dBm). The total size is <inline-formula> <tex-math>$0.22~lambda _{text {c}} times 0.24~lambda _{text {c}}$ </tex-math></inline-formula> (at 2 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"306-309"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning 基于强化学习的宽带微带到微带垂直过渡像素结构设计
IEEE microwave and wireless technology letters Pub Date : 2025-01-08 DOI: 10.1109/LMWT.2024.3519808
Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning
{"title":"Design of Wideband Microstrip-to-Microstrip Vertical Transition With Pixel Structures Based on Reinforcement Learning","authors":"Ze-Ming Wu;Zheng Li;Hai-Biao Chen;Xiao-Chun Li;Hai-Bing Zhan;Ken Ning","doi":"10.1109/LMWT.2024.3519808","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519808","url":null,"abstract":"This article proposes a microstrip-to-microstrip (MS-to-MS) vertical transition with pixel structures and then proposes a knowledge-assisted proximal policy optimization (PPO), which is a reinforcement learning (RL) for the design of this transition. The transition requires fully connected structures and a novel mechanism to generate the pixel structures with fully connected shape is proposed and incorporated into PPO. The proposed method is compared with the particle swarm optimization (PSO) and the genetic algorithm (GA) and demonstrates benefits in improving design efficiency. The designed MS-to-MS transition is fabricated using the PCB process. Measurement results indicate that the designed MS-to-MS vertical transition operates in the band from 3.4 to 14.8 GHz with low insertion loss.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"274-277"},"PeriodicalIF":0.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS 具有SiGe BiCMOS谐波抑制增强的d波段×8倍频器
IEEE microwave and wireless technology letters Pub Date : 2025-01-07 DOI: 10.1109/LMWT.2024.3515486
Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng
{"title":"A D-Band ×8 Frequency Multiplier With Harmonic Suppression Enhancements in SiGe BiCMOS","authors":"Xianhu Luo;Xu Cheng;Jiangan Han;Weikang Zhou;Yunbo Rao;Liang Zhang;Fengjun Chen;Binbin Cheng;Xianjin Deng","doi":"10.1109/LMWT.2024.3515486","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515486","url":null,"abstract":"In this letter, a D-band frequency octupler (<inline-formula> <tex-math>$times 8$ </tex-math></inline-formula>) with high harmonic suppression is presented in a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe BiCMOS technology. To enhance the suppression of even harmonics among high harmonics, we have implemented and refined a waveform shaping technique that effectively elevates the second harmonic while suppressing the fourth, sixth, and higher even harmonics. Additionally, the transformer-based bandpass filters (BPFs) are integrated into the design of the <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier to enhance the suppression of nontarget frequency signals without compromising power consumption. To validate our proposed concept, a D-band <inline-formula> <tex-math>$times 8$ </tex-math></inline-formula> frequency multiplier operating at 114.5–140 GHz is manufactured in a SiGe process. The circuit achieved an output power of −2.5 dBm with an input power of −2 dBm. Within the 3-dB bandwidth, the suppression of various harmonics exceeded 28 dBc and with the maximum suppression exceeding 38 dBc. The chip consumed 125 mW of power and occupied an area of <inline-formula> <tex-math>$0.63times 1.2$ </tex-math></inline-formula> mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"314-317"},"PeriodicalIF":0.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT 微波WPT用AlGaN/GaN GADs的2.4 GHz高效整流特性
IEEE microwave and wireless technology letters Pub Date : 2025-01-06 DOI: 10.1109/LMWT.2024.3522057
Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima
{"title":"High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT","authors":"Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima","doi":"10.1109/LMWT.2024.3522057","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522057","url":null,"abstract":"We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"310-313"},"PeriodicalIF":0.0,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies 毫米波频率下晶圆上器件最佳间距技术
IEEE microwave and wireless technology letters Pub Date : 2025-01-03 DOI: 10.1109/LMWT.2024.3522810
Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni
{"title":"A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies","authors":"Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni","doi":"10.1109/LMWT.2024.3522810","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522810","url":null,"abstract":"In this letter, we present a technique to determine efficient placement of nearby structures to the device-under-test (DUT) based on the DUT’s impedance, which is overlooked in the current layout guidelines. This technique involves sweeping both the impedance of the DUT and the spatial location of the nearby structure to create a map where the structure can be placed that would simultaneously minimize coupling to the DUT as well as the space between devices. The simulations were validated up to 110 GHz using gallium nitride (GaN) high-electron-mobility transistor (HEMT) measurements with and without a nearby line.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"370-373"},"PeriodicalIF":0.0,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method 显隐杂交间断伽辽金时域法中TF/SF源和网格比例的重要应用
IEEE microwave and wireless technology letters Pub Date : 2025-01-01 DOI: 10.1109/LMWT.2024.3521962
Xing Li;Li Xu;Li Liao;Bin Li
{"title":"Important Applications on the TF/SF Source and Grid Proportion for Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method","authors":"Xing Li;Li Xu;Li Liao;Bin Li","doi":"10.1109/LMWT.2024.3521962","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521962","url":null,"abstract":"Based on our previous research on the explicit-implicit hybridizable discontinuous Galerkin time-domain (ex-imHDGTD) method, this letter gives two important applications in time-domain multiscale electromagnetics. The first is that the different ratios of both coarse and refined meshes are discussed, which shows that grid division strategy has a significant effect on the performance of ex-imHDGTD. The second is that a total-field/scattered-field (TF/SF) method is derived to impose the excitation on interfaces instead of boundary faces. Compared with the traditional hybridizable discontinuous Galerkin (HDG) method, the introduction of TF/SF changes the formulations of both local and global linear systems. Once applying this TF/SF in ex-imHDGTD, it is very easy for 3-D waveguide problems to obtain the transmitted and reflected waves. Note that this is the first time the TF/SF is used in the ex-imHDGTD method. Numerical results show that the proposed applications are feasible due to higher computational performances.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"262-265"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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