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Broadband Low-Loss Four-Way Power Divider Using Composite Cavity 使用复合腔体的宽带低损耗四路功率分配器
IEEE microwave and wireless technology letters Pub Date : 2024-04-11 DOI: 10.1109/LMWT.2024.3385438
Ye-Xin Huang;Yu-Xing Yan;Yong-Jie Yang;Jian-Xin Chen
{"title":"Broadband Low-Loss Four-Way Power Divider Using Composite Cavity","authors":"Ye-Xin Huang;Yu-Xing Yan;Yong-Jie Yang;Jian-Xin Chen","doi":"10.1109/LMWT.2024.3385438","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3385438","url":null,"abstract":"A novel four-way power divider, which utilizes the axially symmetric oversized coaxial to transform input to multiway ridge waveguides directly, is presented in this letter. The broadband performance is achieved by means of changing the inner to outer radius ratio of the central oversized coaxial to introduce its higher order TE40 mode within the operating band. Moreover, two kinds of transition structure realize the impedance matching optimization. For demonstration, a power divider centered at 3.7 GHz is designed and fabricated. The measured results exhibit that the proposed power divider owns a wide fractional bandwidth (FBW) of 107.1%. The in-band insertion loss (IL) for the four paths is better than 0.2 dB; meanwhile, the amplitude and phase imbalances are less than ±0.1 dB and ±0.2°, respectively. Good agreement is observed between the simulated and measured results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly Sensitive Lossy Tunable Permittivity Sensor 高灵敏度有损可调脆导传感器
IEEE microwave and wireless technology letters Pub Date : 2024-04-10 DOI: 10.1109/LMWT.2024.3383162
Pau Casacuberta;Paris Vélez;Lijuan Su;Xavier Canalias;Ferran Martín
{"title":"Highly Sensitive Lossy Tunable Permittivity Sensor","authors":"Pau Casacuberta;Paris Vélez;Lijuan Su;Xavier Canalias;Ferran Martín","doi":"10.1109/LMWT.2024.3383162","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3383162","url":null,"abstract":"This letter presents a novel lossy tunable permittivity sensor that enhances sensitivity through a controllable conductivity method using a junction field-effect transistor (JFET) in the ohmic region. The sensor, a one-port reflective-mode device, includes a coplanar waveguide (CPW) ending in a step impedance resonator (SIR) as the sensing element, with the JFET bridging the SIR patch and ground. The high sensitivity is achieved by virtue of the strong shift in the phase of the reflection coefficient at resonance experienced by varying the dielectric constant of the material under test (MUT). This device not only serves as a permittivity sensor but also for tracking variables linked to permittivity changes. Our experimental results uniquely demonstrate that sensitivity to minute perturbations can be significantly enhanced by tuning losses. The prototype, designed and constructed for detecting submillimeter proximity changes with a dielectric slab, achieves a peak sensitivity of 2291°/mm within a compact \u0000<inline-formula> <tex-math>$8.5times12$ </tex-math></inline-formula>\u0000-mm footprint.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Gain and High-Linearity MMIC GaN Doherty Power Amplifier With 3-GHz Bandwidth for Ka-Band Satellite Communications 用于 Ka 波段卫星通信的 3 GHz 带宽高增益、高线性度 MMIC GaN Doherty 功率放大器
IEEE microwave and wireless technology letters Pub Date : 2024-04-10 DOI: 10.1109/LMWT.2024.3384306
Anna Piacibello;Roberto Quaglia;Rocco Giofrè;Ricardo Figueiredo;Paolo Colantonio;Nuno Borges Carvalho;Vaclav Valenta;Vittorio Camarchia
{"title":"High-Gain and High-Linearity MMIC GaN Doherty Power Amplifier With 3-GHz Bandwidth for Ka-Band Satellite Communications","authors":"Anna Piacibello;Roberto Quaglia;Rocco Giofrè;Ricardo Figueiredo;Paolo Colantonio;Nuno Borges Carvalho;Vaclav Valenta;Vittorio Camarchia","doi":"10.1109/LMWT.2024.3384306","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3384306","url":null,"abstract":"This letter presents the design of a Doherty power amplifier (DPA) for satellite applications in the Ka-band downlink (17.3–20.3 GHz) implemented on a 100-nm GaN–Si HEMT technology. The design aims to achieve high gain and very high intrinsic linearity over a wide bandwidth of 3 GHz. The experimental characterization on the fabricated chip demonstrates that the DPA can maintain a noise-to-power ratio (NPR) higher than 25 dB and power-added efficiency (PAE) of 30% while providing 36 dBm of output power, when tested with a 100-MHz uniformly distributed signal, achieving state-of-the-art performance among the integrated power amplifiers for satellite communications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10495893","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters Information for Authors 电气和电子工程师学会《微波与无线技术通讯》作者须知
IEEE microwave and wireless technology letters Pub Date : 2024-04-09 DOI: 10.1109/LMWT.2024.3379024
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3379024","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3379024","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10495294","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140540921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Dual-Band Bandpass Filters Based on Metal-Integrated Suspended Line Technology 基于金属集成吊线技术的双频带通滤波器设计
IEEE microwave and wireless technology letters Pub Date : 2024-04-09 DOI: 10.1109/LMWT.2024.3384966
Yi Wu;Kaixue Ma
{"title":"Design of Dual-Band Bandpass Filters Based on Metal-Integrated Suspended Line Technology","authors":"Yi Wu;Kaixue Ma","doi":"10.1109/LMWT.2024.3384966","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3384966","url":null,"abstract":"This letter introduces two dual-band bandpass filters (BPFs) based on novel metal-integrated suspended line (MISL) technology. These filters are designed to operate simultaneously in both the C-band and Ku-band based on dual-mode MISL resonators with low loss. Unlike traditional coaxial designs, the proposed MISL-based dual-band filters offer a compact footprint and allow for greater flexibility in design and fabrication. To improve the attenuation between the two passbands, the mixed electric and magnetic couplings have been used to achieve controllable between-band transmission zeros (TZs). To validate the concept, two dual-band BPFs are designed, fabricated, and measured. The measured results of the filters align well with the simulated results, confirming the compact size and low-loss characteristics of the proposed designs.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication 电气和电子工程师学会《微波与无线技术通讯》出版物
IEEE microwave and wireless technology letters Pub Date : 2024-04-09 DOI: 10.1109/LMWT.2024.3379022
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3379022","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3379022","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10495297","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140544105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancements in 300 mm GaN-on-Si Technology With Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors 业界首次演示单片集成氮化镓和硅晶体管，推动 300 毫米硅基氮化镓技术发展
IEEE microwave and wireless technology letters Pub Date : 2024-04-08 DOI: 10.1109/LMWT.2024.3383390
Qiang Yu;Ali A. Farid;Ibukunoluwa Momson;Jeffrey Garrett;Heli Vora;Samuel Bader;Ahmad Zubair;Pratik Koirala;Michael Beumer;Andrey Vyatskikh;Paul Nordeen;Thomas Hoff;Marko Radosavljevic;Said Rami;Frank O’Mahony;Han Wui Then
{"title":"Advancements in 300 mm GaN-on-Si Technology With Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors","authors":"Qiang Yu;Ali A. Farid;Ibukunoluwa Momson;Jeffrey Garrett;Heli Vora;Samuel Bader;Ahmad Zubair;Pratik Koirala;Michael Beumer;Andrey Vyatskikh;Paul Nordeen;Thomas Hoff;Marko Radosavljevic;Said Rami;Frank O’Mahony;Han Wui Then","doi":"10.1109/LMWT.2024.3383390","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3383390","url":null,"abstract":"Advancements in 300 mm GaN-on-Si enhancement-mode (E-mode) GaN N-MOSHEMT technology featuring monolithically integrated Si pMOS by layer transfer are presented. In this work, a true gate-last flow is employed, where the high-temperature activation steps of the Si pMOS transistors are completed before depositing the gate dielectric of the GaN N-MOSHEMT. In addition to the Si pMOS integration, GaN N-MOSHEMT performance is enhanced with an \u0000<inline-formula> <tex-math>$f_{mathrm {MAX}}$ </tex-math></inline-formula>\u0000 of 335 GHz (\u0000<inline-formula> <tex-math>$L_{G}$ </tex-math></inline-formula>\u0000 = 90 nm). A mmWave power amplifier (PA) with a high area power density of 3.11 W/mm2 and 99.1 dB figure-of-merit is demonstrated using the improved GaN N-MOSHEMT. Employing GaN N-MOSHEMT and Si pMOS, a vector modulator-based mmWave phase shifter with a 5-bit current-controlled digital-to-analog converter (DAC) is designed and fabricated in this process. The phase shifter achieves full functionality with 360° phase tuning coverage, 5.3° measured RMS phase error, and less than ±1.7 dB magnitude variation across different phase states, occupying 0.12 mm2. This is the industry’s first demonstration of a complex monolithic GaN-Si CMOS circuit, implemented in 300 mm GaN-on-Si technology.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 22-to-37.8-GHz Low-Gain-Phase-Error Variable-Gain Amplifier With Impedance-Compensation Technique in 65-nm CMOS Process 采用阻抗补偿技术的 22 至 37.8 GHz 低增益相位误差可变增益放大器，采用 65 纳米 CMOS 工艺
IEEE microwave and wireless technology letters Pub Date : 2024-04-08 DOI: 10.1109/LMWT.2024.3382588
Yiming Yu;Mengqian Geng;Sirui Peng;Junfeng Li;Chenxi Zhao;Huihua Liu;Yunqiu Wu;Kai Kang
{"title":"A 22-to-37.8-GHz Low-Gain-Phase-Error Variable-Gain Amplifier With Impedance-Compensation Technique in 65-nm CMOS Process","authors":"Yiming Yu;Mengqian Geng;Sirui Peng;Junfeng Li;Chenxi Zhao;Huihua Liu;Yunqiu Wu;Kai Kang","doi":"10.1109/LMWT.2024.3382588","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3382588","url":null,"abstract":"This letter presents a wideband variable-gain amplifier (VGA) with an impedance-compensation technique for 5G new radio. To minimize the gain and phase errors of a millimeter-wave VGA in a wide frequency band, a parasitic-capacitance-compensation method based on varactors is proposed to alleviate the input impedance variation of a cross-coupled structure. To extend gain bandwidth and save chip area, compact transformers with various coupling coefficients are employed to design the input, interstage, and output impedance-matching networks. The VGA is demonstrated by using a 65-nm CMOS process. According to the measurement results, the circuit achieves a peak gain of 12 dB with a 3-dB gain bandwidth of 15.8 GHz. Its fractional bandwidth is up to 52.8%. The tested root-mean-square phase and gain errors of the proposed VGA are lower than 1.2° and 0.1 dB across 24–38 GHz, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers 基于四阶次谐波抽运混频器的相位共轭器
IEEE microwave and wireless technology letters Pub Date : 2024-04-05 DOI: 10.1109/LMWT.2024.3383333
Vinay Iyer;Dustin Widmann;Christopher Moore;Matthew F. Bauwens;Steven M. Bowers;Robert M. Weikle
{"title":"A Phase Conjugator Based on Fourth-Order Subharmonically Pumped Mixers","authors":"Vinay Iyer;Dustin Widmann;Christopher Moore;Matthew F. Bauwens;Steven M. Bowers;Robert M. Weikle","doi":"10.1109/LMWT.2024.3383333","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3383333","url":null,"abstract":"A new phase conjugator circuit architecture suitable for retrodirective array applications is described and demonstrated. The architecture is based on fourth-order subharmonically pumped mixers and requires a local oscillator (LO) frequency at half the radio frequency (RF). Measurements of a prototype phase conjugator operating at an RF input and intermediate frequency (IF) output of 3.47 and 3.57 GHz have shown an RF-to-IF conversion loss of 21.4 dB, RF-to-IF isolation of 26.4 dB, and isolation between the IF and twice the LO of 59.8 dB. A technique to quantitatively measure the phase conjugate signal that does not rely on retroreflection is also detailed.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Molybdenum Disulfide-Based High-Precision Microwave Sensor for Methanol Gas Detection at Room Temperature 用于室温下检测甲醇气体的新型二硫化钼基高精度微波传感器
IEEE microwave and wireless technology letters Pub Date : 2024-04-04 DOI: 10.1109/LMWT.2024.3382605
Mohammad Mahmudul Hasan;Onur Alev;Eda Goldenberg;Michael Cheffena
{"title":"A Novel Molybdenum Disulfide-Based High-Precision Microwave Sensor for Methanol Gas Detection at Room Temperature","authors":"Mohammad Mahmudul Hasan;Onur Alev;Eda Goldenberg;Michael Cheffena","doi":"10.1109/LMWT.2024.3382605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3382605","url":null,"abstract":"This letter reports, for the first time, a molybdenum-disulfide (MoS2)-coated microwave gas sensor for methanol gas detection. A wideband monopole antenna, resonating at 2.45 GHz for wireless applications, is fit with a 15-mm-long copper-based grating sensing element for high-precision gas sensing. When the sensor surface is coated with a highly sensitive layer of hydrothermally grown MoS2 and exposed to methanol gas, the electrical properties of the sensing material change. The developed sensor confirms the detection of methanol gas in parts per thousand (ppt) range from 5.3 to 42.6 ppt with a sensitivity of \u0000<inline-formula> <tex-math>$sim $ </tex-math></inline-formula>\u00001.0 MHz/5 ppt. Furthermore, the gas-sensing functionality of the sensor does not affect the communication performances of the antenna, suggesting seamless integration into wireless sensor networks (WSNs). The simulation results, experimental data, and sensing mechanisms are provided to support the claims.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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