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18–45-GHz Sideband-Separating Downconverter With RF Image Rejection Calibration 带射频图像抑制校准的18 - 45 ghz边带分离下变频器
IEEE microwave and wireless technology letters Pub Date : 2024-12-23 DOI: 10.1109/LMWT.2024.3514321
Sitwala Mundia;Tinus Stander
{"title":"18–45-GHz Sideband-Separating Downconverter With RF Image Rejection Calibration","authors":"Sitwala Mundia;Tinus Stander","doi":"10.1109/LMWT.2024.3514321","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514321","url":null,"abstract":"We present a sideband separating downconverter for radio astronomy applications, featuring radio frequency image rejection calibration for frequencies between 18 and 45 GHz. The multichip module optimizes image rejection for specific target observation frequencies by injecting a modulated portion of the Q-branch signal into the I-branch with independent upper and lower sideband injection control. Measurements demonstrate an average image rejection ratio improvement of 9 dB over a 7-GHz band of interest compared with a baseline uncalibrated operation, with improvement of over 40 dB in targeted subbands.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Directivity-Compensated Wideband Microstrip Coupler Based on Capacitive-Loading Patches and Reflectionless Amplitude Equalizers 基于电容加载贴片和无反射振幅均衡器的方向性补偿宽带微带耦合器
IEEE microwave and wireless technology letters Pub Date : 2024-12-23 DOI: 10.1109/LMWT.2024.3517605
Yuwei Zhang;Jinping Xu;Chenkai He
{"title":"A Directivity-Compensated Wideband Microstrip Coupler Based on Capacitive-Loading Patches and Reflectionless Amplitude Equalizers","authors":"Yuwei Zhang;Jinping Xu;Chenkai He","doi":"10.1109/LMWT.2024.3517605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517605","url":null,"abstract":"This letter proposes a directivity-compensated wideband coupled-line-based microstrip coupler that incorporates capacitive-loading patches and reflectionless amplitude equalizers. Three tiny rectangular patches, which are loaded symmetrically in-between the coupled lines, compensate for the directivity deterioration caused by substrate inhomogeneity in the microstrip coupler. Two reflectionless amplitude equalizers based on resistor-loaded open-ended microstrip line lossy resonators are cascaded at the coupling port and the isolation port, respectively, are utilized to improve the flatness of the coupling coefficient and the isolation without deteriorating the directivity of the coupler. Apart from the amplitude modification in S-parameters, the phase variations introduced during the design process are also analyzed. A prototype of a 20-dB microstrip directional coupler with its working frequency centered at 4.3 GHz was designed and fabricated. Measurement results demonstrate that the fractional bandwidth of the coupling coefficient with its flatness better than ±0.5 dB is as high as 137%. Measured directivity ranges from 17.5 to 36.0 dB across 1.36–7.25 GHz, demonstrating the effectiveness of the proposed design.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"189-192"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2024 Index IEEE Microwave and Wireless Technology Letters Vol. 34 2024索引IEEE微波和无线技术信件卷34
IEEE microwave and wireless technology letters Pub Date : 2024-12-23 DOI: 10.1109/LMWT.2024.3519798
{"title":"2024 Index IEEE Microwave and Wireless Technology Letters Vol. 34","authors":"","doi":"10.1109/LMWT.2024.3519798","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519798","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1415-1489"},"PeriodicalIF":0.0,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10812031","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142875115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Ultraminiaturized High-Selectivity LTCC On-Chip Filtering Balun With Ultrawide Stopband 一种具有超宽阻带的微型化高选择性LTCC片上滤波平衡器
IEEE microwave and wireless technology letters Pub Date : 2024-12-18 DOI: 10.1109/LMWT.2024.3515169
Wei Zhao;Yongle Wu;Zuoyu Xu;Weimin Wang
{"title":"An Ultraminiaturized High-Selectivity LTCC On-Chip Filtering Balun With Ultrawide Stopband","authors":"Wei Zhao;Yongle Wu;Zuoyu Xu;Weimin Wang","doi":"10.1109/LMWT.2024.3515169","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515169","url":null,"abstract":"In this letter, a generalized approach for on-chip filtering baluns with high selectivity and ultrawide stopband is proposed using the single-ended and differential lumped-distributed resonators (LDRs) in low-temperature cofired ceramic (LTCC) technology. The LDR with an inherent out-of-phase feature exhibits ultrawide harmonic suppression. Meanwhile, three transmission zeros (TZs) are generated by the LDRs and the input LC tank. Furthermore, the theoretical extensions of the arbitrary-order topology are easily realized. For verification, a filtering balun covering the B41 band with one of the smallest reported areas of <inline-formula> <tex-math>$0.0028lambda _{text {g}}^{2}$ </tex-math></inline-formula> is designed, which exhibits a low insertion loss (IL) of 1.4 dB, amplitude and phase imbalances (PIs) of 0.4 dB and 1.4°, and a 20-dB upper stopband (USB) up to 16.5 GHz or <inline-formula> <tex-math>$6.4f_{0}$ </tex-math></inline-formula>. The lower and upper roll-off factors (ROFs) are observed to reach 100 and 64 dB/GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier 基于反f类放大器的大功率高效GaN-HEMT压控振荡器设计
IEEE microwave and wireless technology letters Pub Date : 2024-12-17 DOI: 10.1109/LMWT.2024.3514739
Junlin Mi;Ruinan Fan;Liping Yan;Yuhao Feng;Changjun Liu
{"title":"Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier","authors":"Junlin Mi;Ruinan Fan;Liping Yan;Yuhao Feng;Changjun Liu","doi":"10.1109/LMWT.2024.3514739","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514739","url":null,"abstract":"This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator (VCO). The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator (SIR). Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier (PA) operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41–2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"241-244"},"PeriodicalIF":0.0,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-Band High Intermediate-Frequency Subharmonic Mixer Utilizing a Novel T-Type Duplexer 利用新型t型双工器的w波段高中频次谐波混频器
IEEE microwave and wireless technology letters Pub Date : 2024-12-17 DOI: 10.1109/LMWT.2024.3506826
Changfei Yao;Wenjie Ma;Hao Lin
{"title":"A W-Band High Intermediate-Frequency Subharmonic Mixer Utilizing a Novel T-Type Duplexer","authors":"Changfei Yao;Wenjie Ma;Hao Lin","doi":"10.1109/LMWT.2024.3506826","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3506826","url":null,"abstract":"This letter presents the design of a W-band subharmonic mixer (SHM) featuring a novel T-type duplexer structure. The structural modifications of the duplexer effectively reduce the discontinuities and parasitic effects in the microstrip lines, enhancing the transmission performance of both the local oscillator (LO) and intermediate-frequency (IF) signals. By optimizing the internal microstrip layout of the duplexer and shortening the length (L) of the open-circuited stub, the interference of the resonance point on IF output performance is eliminated. The SHM is fabricated and tested, and the results indicate that with the LO frequency fixed at 40 GHz, the conversion loss (CL) in the radio frequency (RF) range of 89–99 GHz is between 8.1 and 14.7 dB, with a minimum CL of 8.1 dB at 90 GHz, and a high IF output frequency range of 9–19 GHz, with an effective bandwidth of 10 GHz, is achieved. The potential application is as the first-stage frequency conversion module in the downconversion chain of a W-band multichannel transceiver.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"233-236"},"PeriodicalIF":0.0,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A S-/C-Band 6-bit Passive Phase Shifter With an X-Shape Merged 180° and 90° Cell 一种S / c波段6位无源移相器，x形合并180°和90°单元
IEEE microwave and wireless technology letters Pub Date : 2024-12-11 DOI: 10.1109/LMWT.2024.3511920
Genyin Ma;Fanyi Meng
{"title":"A S-/C-Band 6-bit Passive Phase Shifter With an X-Shape Merged 180° and 90° Cell","authors":"Genyin Ma;Fanyi Meng","doi":"10.1109/LMWT.2024.3511920","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3511920","url":null,"abstract":"This letter presents a 6-bit passive phase shifter (PS) for 3.7–5.3-GHz (S-/C-Band) phase-array communications. The PS adopts several cascaded switchable phase-shifting cells, in topologies of <inline-formula> <tex-math>$Pi $ </tex-math></inline-formula>-type, T-type, and the proposed X-shape structure. The 180° and 90° phase-shifting cells are merged and co-designed, whose switch configuration resembles the X-shape. It allows the reduction of one switch transistor and its associated insertion losses in the RF path. The proposed 6-bit PS is designed and fabricated in a 55-nm bulk CMOS. The measured results reveal an insertion loss (IL) of 8.5–9.5 dB, a root-mean-square (rms) phase error of 3.50°–5.15°, and an rms amplitude error of 0.23–0.51 dB. The chip occupies an area of 0.80 mm2 and consumes negligible power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Transistor-Based Dual-Band Rectifier With Harmonic-Controlled Dual Transmission Line 基于晶体管的谐波控制双传输线双频整流器
IEEE microwave and wireless technology letters Pub Date : 2024-12-11 DOI: 10.1109/LMWT.2024.3507015
Rui Zhang;Guohua Liu;Jianwei Zhou;Jiaqi Zhang
{"title":"A Transistor-Based Dual-Band Rectifier With Harmonic-Controlled Dual Transmission Line","authors":"Rui Zhang;Guohua Liu;Jianwei Zhou;Jiaqi Zhang","doi":"10.1109/LMWT.2024.3507015","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3507015","url":null,"abstract":"This letter proposes a high-efficiency dual-band rectifier based on transistors, introducing a novel output-matching network that integrates harmonic control into the dual-band fundamental impedance-matching design. This approach ensures that the input impedance aligns with the dual-band fundamentals while also effectively expanding the bandwidth of the dual-band rectifier. Additionally, the dual transmission lines modulate the harmonic components of both frequencies into a purely reactive impedance, while the T-section optimizes the imaginary part of the harmonic input impedance for both frequencies. To validate the effectiveness of this method, a high-efficiency dual-band rectifier operating at 0.9 and 2.45 GHz is designed and fabricated using CGH40010F GaN HEMT. Measurement results show that at an input power of 40 dBm and a dc load of <inline-formula> <tex-math>$60~Omega $ </tex-math></inline-formula>, the rectifier achieves efficiencies of 82% at 0.9 GHz and 78% at 2.45 GHz, which maintains a bandwidth of 100 MHz. The circuit size is <inline-formula> <tex-math>$6.6times 4.6$ </tex-math></inline-formula> cm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1–5 GHz 3.5-bit GaN MMIC Variable Attenuator With 55 dB Range 1-5 GHz 3.5位GaN MMIC可变衰减器，55 dB范围
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3508475
Seth Johannes;Kenneth E. Kolodziej;Zoya Popović
{"title":"1–5 GHz 3.5-bit GaN MMIC Variable Attenuator With 55 dB Range","authors":"Seth Johannes;Kenneth E. Kolodziej;Zoya Popović","doi":"10.1109/LMWT.2024.3508475","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3508475","url":null,"abstract":"This letter presents a 3.5-bit variable attenuator (VA) MMIC that operates from 1–5 GHz. The MMIC is implemented in the Qorvo 250 nm BCB2 GaN-on-SiC process. An attenuation range of 55 dB in steps of 5 dB is achieved with resistive T networks and HEMT switch devices. The bit values are implemented with 5, 10, and 20/40 networks. The 20 and 40 dB resistive networks are combined into a single network, with the attenuation level determined by a switchable shunt resistance, resulting in an additional half bit. For the desired <inline-formula> <tex-math>$10~Omega $ </tex-math></inline-formula> and <inline-formula> <tex-math>$1~Omega $ </tex-math></inline-formula> shunt resistance values of the 20 and 40 dB T networks, the <inline-formula> <tex-math>$R_{mathrm { on}}$ </tex-math></inline-formula> of the shunt switch devices are used, balancing the <inline-formula> <tex-math>$R_{mathrm { on}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$C_{mathrm { off}}$ </tex-math></inline-formula> of the device. The VA demonstrates all 11 attenuation states with a return loss better than 10 dB across all states within a 5:1 frequency range and a minimum input P1dB of 34 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143422884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Triple-Band Bandpass Filter Based on Triple-Mode Metal Block Resonators 基于三模金属块谐振器的三带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2024-12-09 DOI: 10.1109/LMWT.2024.3509141
Jun-Jie Yan;Fu-Chang Chen;Rui-Cong Lin
{"title":"A Triple-Band Bandpass Filter Based on Triple-Mode Metal Block Resonators","authors":"Jun-Jie Yan;Fu-Chang Chen;Rui-Cong Lin","doi":"10.1109/LMWT.2024.3509141","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3509141","url":null,"abstract":"This letter presents a design methodology for triple-band bandpass filters. A triple-mode resonator comprising two metal blocks is proposed to configure the topology. Compared with the traditional triple-band cavity filters, the most noteworthy attribute of the proposed resonator is the ability to independently tune the resonance and coupling of one of the three modes, making the design procedure simple and fast. In addition, the use of metal blocks can further reduce the size of the filter. To verify the proposed design method, a third-order triple-band filter with an identical bandwidth is designed, fabricated, and measured. The measured results are in good agreement with the simulations.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"173-176"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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