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Quarter-Mode Dielectric-Filled Resonators Based on Virtual Magnetic Walls 基于虚磁壁的四分之一模介质填充谐振器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552115
Zhengjun Du;Jin Pan;Deqiang Yang;Xianfeng Liu;Sihao Liu
{"title":"Quarter-Mode Dielectric-Filled Resonators Based on Virtual Magnetic Walls","authors":"Zhengjun Du;Jin Pan;Deqiang Yang;Xianfeng Liu;Sihao Liu","doi":"10.1109/LMWT.2025.3552115","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552115","url":null,"abstract":"A compact quarter-mode (QM) dielectric-filled resonator (DR) is proposed, along with a design methodology employing virtual magnetic walls (VMWs). The operating principle of the QM DR is discussed, focusing on the realization of VMW through an open aperture (OA), which eliminates the aspect ratio limitation. The implementation of VMWs is analyzed using transmission line theory. Compared to conventional full-mode (FM) resonators, the proposed QM DR achieves a 67% reduction in size and weight. This compact design makes the QM DR well-suited for the development of compact bandpass filters (BPFs), offering enhanced out-of-band selectivity. To validate the proposed approach, a fourth-order QM DR BPF was designed, fabricated, and experimentally tested. The experimental results confirm the improved out-of-band selectivity, demonstrating the effectiveness of the proposed design.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"650-653"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Virtual Magnetic Wall and Its Application in Half-Mode Cavity Resonators 虚磁壁及其在半模腔谐振器中的应用
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3551800
Zhengjun Du;Jin Pan;Ma Boyuan
{"title":"Virtual Magnetic Wall and Its Application in Half-Mode Cavity Resonators","authors":"Zhengjun Du;Jin Pan;Ma Boyuan","doi":"10.1109/LMWT.2025.3551800","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551800","url":null,"abstract":"This letter presents a novel methodology for the design and evaluation of virtual magnetic walls (VMWs), specifically tailored for half-mode (HM) cavity resonators. The proposed method overcomes the limitation of small open apertures (OAs) with aspect ratios (ARs) exceeding 10, which is common in traditional HM designs. The approach results in a 37% reduction in both volume and weight compared to traditional full-mode (FM) counterparts. Due to their compact and lightweight nature, HM cavity resonators are particularly well-suited for the development of bandpass filters (BPFs). A four-pole HM BPF was designed, fabricated, and measured. Experimental results confirm the effectiveness of the proposed design and highlight its practical advantages in improving stopband selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"646-649"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance 采用RC反馈和电感谐振的宽带CMOS低噪声放大器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3553444
Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park
{"title":"Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance","authors":"Hyojin Yoon;Chaeyun Kim;Bohyeon Kim;Jaeyong Lee;Changkun Park","doi":"10.1109/LMWT.2025.3553444","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553444","url":null,"abstract":"In this study, we design a CMOS wideband low-noise amplifier (LNA) with staggered tuning technique. In a wideband LNA, a design technique that can secure the gain flatness using <italic>RC</i> feedback and inductor for resonance is proposed. The common-source (CS) structure with an <italic>RC</i> feedback and an inductor is analyzed using equivalent circuits, and it was verified that the gain could be flattened by adjusting the resonance frequency and the resistance of the <italic>RC</i> feedback. In addition, a high-pass filter (HPF) structure and an adaptive bias circuit (ABC) are applied to obtain a reasonable noise figure (NF) and linearity in a wide frequency range. A designed wideband LNA is fabricated using 65-nm RFCMOS process. As a measured result, the 1-dB bandwidth is approximately 15.6GHz from 20.1 to 35.7GHz. The 3-dB bandwidth is measured at 18.4 GHz. In the range of 25–35 GHz, the NF is lower than 3.45 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"722-725"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array 一种带ftl和开关电容阵列的q波段超低抖动亚谐波注入锁频四倍器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552410
Po-Yuan Chen;Hong-Yeh Chang
{"title":"A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array","authors":"Po-Yuan Chen;Hong-Yeh Chang","doi":"10.1109/LMWT.2025.3552410","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552410","url":null,"abstract":"In this letter, a <italic>Q</i>-band ultralow jitter subharmonically injection-locked frequency quadrupler (SILFQ) with frequency-tracking loop (FTL) and 2-bit switched-capacitor array (SCA) is proposed using 90-nm CMOS process. To comprehensively enhance the overall performance of local oscillator (LO) generation, the proposed SILFQ not only employs FTL to adaptively control the locking mechanism over variations but also integrates an unprecedented combination of SCA and frequency multiplier to effectively broaden the overall locking range. The proposed SILFQ with SCA demonstrates a measured locking range of 6.4 GHz. With FTL, the measured phase noise at 1-MHz offset and root-mean-square (rms) jitter integrated from 1 kHz to 40 MHz are −128.8 dBc/Hz and 10.1 fs, respectively. The jitter degradation between injection and output signal is merely within 4 fs. The dc power consumption is 37.4 mW, with a differential output power of −2 dBm and a compact chip size of 0.7 mm<sup>2</sup>. Featuring several excellent figure of merits (FoMs), this design is well-suited for advanced millimeter-wave (mm-wave) applications due to its superior circuit performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"864-867"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers 基于ai辅助深度学习的高效F类功率放大器设计
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552495
Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager
{"title":"AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers","authors":"Han Zhou;Haojie Chang;David Widén;Ludvig Fornstedt;Gabriel Melin;Christian Fager","doi":"10.1109/LMWT.2025.3552495","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552495","url":null,"abstract":"This article presents a deep-learning-based approach for designing Class F power amplifiers (PAs). We use convolutional neural networks (CNNs) to predict the scattering parameters of pixelated electromagnetic (EM) layouts. Using a CNN-based surrogate model and an evolutionary algorithm, we synthesize complex Class F output networks. As a proof of concept, we implement a gallium nitride (GaN) HEMT Class F PA, achieving a measured output power of 41.6 dBm and a drain efficiency of 74% at 2.9 GHz. The prototype also linearly reproduces a 20-MHz modulated signal with an 8.5-dB peak-to-average power ratio (PAPR), achieving an adjacent channel leakage ratio (ACLR) of −50.7 dBc with digital predistortion (DPD). To the best of our knowledge, this is the first deep-learning-based Class F PA design using pixelated layout structures.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"690-693"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10948016","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Loss Reflectionless Filtering Attenuator With Ultrawide Bandwidth and Extended Tunable Attenuation Range 具有超宽带宽和扩展可调谐衰减范围的可调谐损耗无反射滤波衰减器
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3551311
Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin
{"title":"Tunable Loss Reflectionless Filtering Attenuator With Ultrawide Bandwidth and Extended Tunable Attenuation Range","authors":"Feng Wei;Hong-Yu Liu;Xing-Chen Zhou;Pu-Zhe Cui;Gang Jin","doi":"10.1109/LMWT.2025.3551311","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3551311","url":null,"abstract":"In this letter, a novel tunable loss reflectionless filtering attenuator with ultrawide bandwidth and extended tunable attenuation range is proposed for the first time. The ultrawide bandwidth benefits from the application of unequal-width three-coupled line structures. In order to achieve both in-band and out-of-band reflectionless performance, a pair of absorptive sections are loaded at both ports to eliminate out-of-band reflections. Moreover, the unequal-width three-coupled line structure loaded by p-i-n diodes is utilized to realize a wide tunable attenuation range. For demonstration, an ultrawideband (UWB) reflectionless filtering attenuator prototype is fabricated, where the measured results agree well with the corresponding simulations. The measured results show that the reflectionless filtering attenuator features a fractional bandwidth of 104.9% and can realize the attenuation of 2.5–26.4 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"666-669"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC-to-89-GHz AMUX-Based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem 用于多路dac子系统的250nm InP HBT技术的dc -89 ghz amux IQ调制器
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552690
Munehiko Nagatani;Hitoshi Wakita;Teruo Jyo;Yuta Shiratori;Miwa Mutoh;Akira Kawai;Masanori Nakamura;Fukutaro Hamaoka;Hiroshi Yamazaki;Takayuki Kobayashi;Yutaka Miyamoto;Hiroyuki Takahashi
{"title":"DC-to-89-GHz AMUX-Based IQ Modulator in 250-nm InP HBT Technology for Multiplexing-DAC Subsystem","authors":"Munehiko Nagatani;Hitoshi Wakita;Teruo Jyo;Yuta Shiratori;Miwa Mutoh;Akira Kawai;Masanori Nakamura;Fukutaro Hamaoka;Hiroshi Yamazaki;Takayuki Kobayashi;Yutaka Miyamoto;Hiroyuki Takahashi","doi":"10.1109/LMWT.2025.3552690","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552690","url":null,"abstract":"This article presents an ultra broadband in-phase and quadrature (IQ) modulator in 250-nm InP heterojunction bipolar transistor (HBT) technology for a multiplexing-digital-to-analog converter (DAC) subsystem enabling high-symbol-rate baseband signal generation in optical communications. The IQ modulator consists of two analog multiplexers (AMUXs), data/clock buffers, a quadrature filter, a linear adder, and an output buffer. The fabricated AMUX-based IQ modulator integrated circuit (IC) has a bandwidth of 98 GHz ranging from direct current (DC) and consumes a total power of 880 mW with a supply voltage of −4.0 V. The packaged IQ modulator module with coaxial connectors maintains a bandwidth of 89 GHz. Using the multiplexing-DAC subsystem based on this module, high-symbol-rate baseband signal generations and optical modulations up to 168-GBaud 16-ary quadrature amplitude modulation (16QAM) were successfully demonstrated. To the best of our knowledge, this is the broadest bandwidth IQ modulator reported to date.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"868-871"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subwavelength 8 × 8 Butler Matrix With Pixel Metamaterial for Space Limited Systems 空间有限系统中具有像素超材料的亚波长8 × 8巴特勒矩阵
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552854
Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li
{"title":"Subwavelength 8 × 8 Butler Matrix With Pixel Metamaterial for Space Limited Systems","authors":"Pengyu Fu;Yongjian Zhang;Mingzhe Hu;Ziheng Zhou;Hao Li;Yue Li","doi":"10.1109/LMWT.2025.3552854","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552854","url":null,"abstract":"In this letter, a subwavelength <inline-formula> <tex-math>$8times 8$ </tex-math></inline-formula> Butler matrix (BM) with inverse-designed pixel metamaterial is proposed for space limited systems. With inverse-designed metamaterial, the broadband asymmetric 3-dB couplers with arbitrary phase difference are constructed, which eliminates the space for phase delay lines in BM, significantly reducing the overall size. Finally, a prototype of the proposed BM is fabricated and measured, which exhibits a bandwidth of 21.6% by occupying a compact size of <inline-formula> <tex-math>$0.95lambda _{0}times 0.70lambda _{0}times 0.01lambda _{0}$ </tex-math></inline-formula>. With a subwavelength scale, the proposed ultracompact BM can be easily integrated with antenna array for applications in compact multibeam systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"642-645"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical and Experimental Investigations of a 90° Bend Based on Nonradiative Dielectric Waveguide 基于非辐射介质波导的90°弯曲理论与实验研究
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2024.3523901
Meiling Ou;Yiang Chen;Dagang Liu;Haiyang Wang;Tianming Li;Biao Hu;Cheng Zhang;Fadhel M. Ghannouchi;Hao Li
{"title":"Theoretical and Experimental Investigations of a 90° Bend Based on Nonradiative Dielectric Waveguide","authors":"Meiling Ou;Yiang Chen;Dagang Liu;Haiyang Wang;Tianming Li;Biao Hu;Cheng Zhang;Fadhel M. Ghannouchi;Hao Li","doi":"10.1109/LMWT.2024.3523901","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3523901","url":null,"abstract":"Nonradiative dielectric (NRD) waveguides are recognized as suitable transmission lines for millimeter-wave applications, as they are planarized and of low loss. However, since the mode with the lowest loss is not the mode with the lowest cutoff frequency, NRD waveguides are often used in an overmoded state. Many devices based on NRD that do not need to be deformed are designed and have achieved good results. Nevertheless, the physical mechanism underpinning the bending of NRD waveguides in the direction of propagation while maintaining an unchanged cross section has not been fully elucidated, due to the inapplicability of the original coupled-wave analysis method. In this letter, we focus on a 90° NRD bend and attempt to explain the mode coupling of NRD during the bending process. The bandwidth of the designed W-band NRD bend with a transmission efficiency greater than 95% is 5 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"634-637"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz 基于相变材料的直流至200 GHz宽带高性能SPDT开关
IEEE microwave and wireless technology letters Pub Date : 2025-04-01 DOI: 10.1109/LMWT.2025.3552771
Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai
{"title":"Broadband High-Performance SPDT Switch Based on Phase-Change-Material From DC to 200 GHz","authors":"Yi-Ting Lin;Ching-En Chen;Kuo-Pin Chang;Hung-Ju Li;Chang-Chih Huang;Yu-Wen Wang;Wei-Fang Chen;Han-Yu Chen;Chih-Ren Hsieh;Yu-Wei Ting;Kuo-Chin Huang;Harry Chuang;Zuo-Min Tsai","doi":"10.1109/LMWT.2025.3552771","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552771","url":null,"abstract":"This letter presents two single-pole, double-throw (SPDT) switches (SPDT-1 and SPDT-2) that use phase-change material (PCM)-based switching devices with matching networks to compensate for the high-frequency parasitic effects and a low-impedance transmission line as a novel bias circuit, operating from 0 (dc) to 200 GHz. SPDT-1 uses a series-only architecture to achieve extremely low loss, with measured insertion loss below 0.6 dB up to 60 GHz and 2.2 dB up to 200 GHz and measured isolation higher than 35.5 dB up to 60 GHz and 14.2 dB up to 200 GHz. SPDT-2 has an extra shunt switching device to achieve high isolation performance, with measured insertion loss below 0.6 dB up to 60 GHz and 2.9 dB up to 200 GHz and measured isolation higher than 37.6 dB up to 60 GHz and 25.6 dB up to 200 GHz. The measured results indicated that the proposed switches outperformed existing radio frequency (RF) switches in the terahertz (THz) frequency band. To the best of the authors’ knowledge, this study is the first to develop PCM-based SPDT switches that can operate at frequencies of up to 200 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"730-733"},"PeriodicalIF":0.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10947173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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