发布求助
文献互助 智能选刊 最新文献

IEEE microwave and wireless technology letters最新文献

筛选
英文 中文
Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity 具有增强隔离和频率选择性的平面平衡和单端双路滤波交叉
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526823
Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang
{"title":"Planar Balanced and Single-Ended Dual-Path Filtering Crossover With Enhanced Isolation and Frequency Selectivity","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang","doi":"10.1109/LMWT.2025.3526823","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526823","url":null,"abstract":"In this letter, a novel high-performance planar balanced and single-ended dual-path (BSDP) filtering crossover is proposed, which achieves not only cross-transmission and great common-mode (CM) suppression but also enhanced isolation and frequency selectivity. The constraint rules of S-parameters are provided, and the circuit structure is simplified and analyzed based on the classical even- and odd-mode method. The freely selected electrical parameters of the BSDP crossover are considered and explored to control the filtering transmission bandwidths of the balanced path and single-ended (SE) path, independently. To verify the viability of this design, a microstrip prototype is manufactured and measured with enhanced wideband isolation and sharp filtering selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"286-289"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band ka波段多间隙波导液晶移相器
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3527029
Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez
{"title":"Multigap-Waveguide Liquid Crystal Phase Shifter at Ka-Band","authors":"Marc Späth;Robin Neuder;Martin SchüßLer;Rolf Jakoby;Alejandro Jiménez-Sáez","doi":"10.1109/LMWT.2025.3527029","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527029","url":null,"abstract":"This letter presents for the first time an innovative waveguide structure, the multigap-waveguide (MGWG), utilizing liquid crystal (LC) technology to develop a continuously tunable phase shifter at Ka-band. In contrast to existing LC phase shifters, this design eliminates the need for polymer films or thin-film stepped impedance structures to control LC molecules. The inclusion of a gap waveguide flange ensures an individual electrical biasing of the four electrodes. The proposed design achieves a maximum differential phase of 281° in the frequency range from 24 to 38.5 GHz, with insertion losses ranging from 2.1 to 3.1 dB. The maximum figure of merit (FoM) is 105°/dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"294-297"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10843103","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias 斜外磁偏置全各向异性圆波导的截止频率
IEEE microwave and wireless technology letters Pub Date : 2025-01-15 DOI: 10.1109/LMWT.2025.3526415
Konstantinos Delimaris;Grigorios P. Zouros
{"title":"Cutoff Frequencies of Fully Anisotropic Circular Waveguides With Oblique External Magnetic Bias","authors":"Konstantinos Delimaris;Grigorios P. Zouros","doi":"10.1109/LMWT.2025.3526415","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526415","url":null,"abstract":"In this letter, the cutoff frequencies of multilayered fully anisotropic circular waveguides with metallic walls are calculated in the general case, in which the waveguide’s anisotropic material is magnetized by an external magnetic bias which is obliquely oriented with respect to the waveguide’s axis. This is a generalization of cases where the bias is aligned to the waveguide’s axis and the material features gyrotropic behavior. This problem is solvable via a coupled-field volume integral equation-cylindrical Dini series expansion (CFVIE-CDSE) method, previously used for the calculation of electromagnetic (EM) scattering by anisotropic cylinders with oblique magnetic bias, by combining formerly constructed modified tensorial Green’s functions (GFs) to account for the boundary conditions (BCs) on the metallic walls. We validate the extended CFVIE-CDSE method with the HFSS commercial software and we study a microwave application of a G-610 aluminum garnet ferrite-loaded waveguide, magnetized under oblique magnetic bias, where we compute the complex cutoff frequencies.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"266-269"},"PeriodicalIF":0.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control 输入谐波控制的线性增强Doherty功率放大器设计策略
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2024.3524123
Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen
{"title":"A Design Strategy for Linearity-Enhanced Doherty Power Amplifier by Input Harmonics Control","authors":"Cheng Zhong;Songbai He;Minxian Song;Yongwen Yin;Xubin Zhang;Ce Shen","doi":"10.1109/LMWT.2024.3524123","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3524123","url":null,"abstract":"In this letter, a linearity-enhanced Doherty power amplifier (DPA) design strategy based on input second-harmonics control is proposed. By combining the load modulation process and analyzing the gain compression and phase changes caused by introducing input harmonics, suitable harmonic parameters are determined. The proposed method helps to reduce amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortion. Moreover, this method has a minimal impact on efficiency. To verify this method, a linearity-enhanced DPA is designed to operate within 3.2–3.7 GHz. Test results exhibit AM-AM distortion within 0.75 dB, AM-PM distortion within 3°, and the adjacent channel power ratio (ACPR) better than −40 dBc under 80-MHz modulated signal excitation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"350-353"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology 基于0.1 μm GaAs pHEMT技术的220 ghz有源下变频混频器
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3525762
Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu
{"title":"A 220-GHz Active Down-Conversion Mixer Based on 0.1-μm GaAs pHEMT Technology","authors":"Xinli Han;Zhidong Lyu;Zhenbei Li;Jian Zhang;Changming Zhang;Cheng Guo;Xiang Zhu;Xianbin Yu","doi":"10.1109/LMWT.2025.3525762","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3525762","url":null,"abstract":"Terahertz (THz) mixers play a paramount role in high-speed communication and high-precision detection, yet are constrained by the typical need for advanced fabrication technologies and high-power THz local oscillator (LO) pump sources. This article presents the design and implementation of a single-ended subharmonic down-conversion mixer, leveraging a gate-pumped topology that operates with low LO input frequency and power requirements. The monolithic microwave integrated circuit (MMIC) of the mixer is fabricated in a 0.1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology and mounted to form a module. The mixer module exhibits a 3-dB radio frequency (RF) bandwidth (BW) of approximately 26 GHz, covering the range from 206 to 232 GHz. The performance supports the down-conversion of a 12-Gb/s optoelectronic THz communication system, offering a promising solution for cost-effective broadband THz converters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"354-357"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays 横向布置多继电器的广义pt对称无线电力传输系统
IEEE microwave and wireless technology letters Pub Date : 2025-01-13 DOI: 10.1109/LMWT.2025.3526140
Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng
{"title":"Generalized PT-Symmetric Wireless Power Transfer Systems With Laterally Arranged Multirelays","authors":"Chen Ding;Lei Feng;Pengde Wu;Gaofeng Wang;Yuhua Cheng","doi":"10.1109/LMWT.2025.3526140","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526140","url":null,"abstract":"The concept of parity-time (PT) symmetry, when applied in wireless power transfer (WPT) systems, helps to prevent a decrease in power delivery. In existing research on PT-symmetric WPT systems with laterally arranged multirelays, employed for expanding the lateral transfer region, only a special case has been considered for the coupling coefficient required to achieve PT symmetry. This strict special case condition increases the complexity and difficulty of implementing the system in reality. In this letter, a general condition of coupling coefficient for the PT-symmetric system with laterally arranged multirelays is analytically derived, by reducing a high-order Hamiltonian to an equivalent second-order one. The theoretical derivation is experimentally verified. An experimental system example with two relays demonstrates about a 100% increase in lateral transfer distance with stable power transfer, compared to the traditional system without relays. Our work paves the way for implementation of simpler high-order PT-symmetric systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"366-369"},"PeriodicalIF":0.0,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap 基于变压器二次谐波陷阱的CMOS线性低噪声放大器
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3522299
Il Jun Kim;Min-Su Kim
{"title":"A CMOS Linear Low-Noise Amplifier Using Transformer-Based Second-Harmonic Trap","authors":"Il Jun Kim;Min-Su Kim","doi":"10.1109/LMWT.2024.3522299","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522299","url":null,"abstract":"This letter presents second-harmonic termination techniques for inductively source-degenerated cascode CMOS low-noise amplifiers (LNAs) with a transformer (TF)-based harmonic network. The proposed harmonic trap circuit terminates the second-order distortion generated in the common-source stage of the cascode structure, thereby improving the linearity of the LNA. In a transformed-based harmonic trap circuit, the primary inductor of the TF is used as the source-degenerated inductor for fundamental frequency gain and noise matching, and the secondary inductor along with an additional capacitor is used to terminate the second-harmonic frequency through LC resonance. The LNA is implemented using a 90-nm CMOS process and includes on-chip electrostatic discharge (ESD) protection circuits, making it suitable for commercialization. The fabricated LNA achieves a small signal gain of 18.48 dB, a noise figure (NF) of 1.1 dB, and an third input intercept point (IIP3) performance of -5.9 dBm at 2.62 GHz. The chip has an area of <inline-formula> <tex-math>$416times 879~mu $ </tex-math></inline-formula>m2 excluding the guard-ring layer, and it consumes 11.76 mW of power at a supply voltage of 1.2 V.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"338-341"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10837581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS 基于非对称电流分布的0.2 - 3.2 ghz有源Balun-LNA
IEEE microwave and wireless technology letters Pub Date : 2025-01-10 DOI: 10.1109/LMWT.2024.3525066
Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu
{"title":"A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS","authors":"Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu","doi":"10.1109/LMWT.2024.3525066","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525066","url":null,"abstract":"This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"326-329"},"PeriodicalIF":0.0,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3521605
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2024.3521605","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3521605","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835206","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Welcome to the New Editor-in-Chief 欢迎来到新主编
IEEE microwave and wireless technology letters Pub Date : 2025-01-09 DOI: 10.1109/LMWT.2024.3522597
Roberto Gómez García;Zhizhang David Chen
{"title":"Welcome to the New Editor-in-Chief","authors":"Roberto Gómez García;Zhizhang David Chen","doi":"10.1109/LMWT.2024.3522597","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3522597","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"2-3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10835209","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信