T. Amarilla;M. B. González;F. Campabadal;M. Nafria;A. Crespo-Yepes;P. de Paco;J. Verdú
{"title":"Fabrication and Characterization of Al/Ti/HfO$_{2}$/W Memristor-Based RF Switches","authors":"T. Amarilla;M. B. González;F. Campabadal;M. Nafria;A. Crespo-Yepes;P. de Paco;J. Verdú","doi":"10.1109/LMWT.2026.3678995","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3678995","url":null,"abstract":"This work reports for the first time on the fabrication and the DC and radio frequency (RF) characterization of CMOS-compatible Al/Ti/HfO<sub>2</sub>/W memristor-based RF switches, integrated with coplanar transmission lines (TLs) designs in two configurations: series and shunt memristor. The fabricated memristors show stable bipolar resistive switching and repeatable <sc>on/off</small> conductive states over multiple cycles, achieving an <sc>on/off</small> ratio exceeding one order of magnitude. During the memristor operation, increasing the current limit (CL) during SET process reduces the <sc>on</small>-state resistance, enhancing the conduction of the filament and improving the switch performance. The two RF switch configurations were also experimentally characterized in the frequency domain from 10 MHz to 50 GHz, revealing that CL controls the RF response of the switch: In the series configuration the insertion loss is reduced below 2.1 dB in the <sc>on</small>-state, whereas the shunt configuration achieves isolation up to 12 dB in the <sc>off</small>-state. The cutoff frequency was extracted, reaching a value of 8.1 GHz. The experimental results demonstrate the potential of memristor devices as compact, low-power, nonvolatile RF switches, paving the way for their exploitation in RF applications and circuits.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1498-1501"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11481448","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang Li;Man-Xuan Niu;Yan Xuan;Qiu-Xuan Li;Xiao Wang;Zhi-Wei Chen;Zhang-Cheng Liu;Tao Liu;Jin-Ping Ao
{"title":"GaN HEMT-Based Pressure Sensor With Microwave Rectification-Enhanced Sensitivity","authors":"Yang Li;Man-Xuan Niu;Yan Xuan;Qiu-Xuan Li;Xiao Wang;Zhi-Wei Chen;Zhang-Cheng Liu;Tao Liu;Jin-Ping Ao","doi":"10.1109/LMWT.2026.3682505","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3682505","url":null,"abstract":"This work presents a microwave rectification enhanced pressure sensor. The sensor consists of a 2.4-GHz GaN Schottky barrier diode (SBD)-based rectifier operating with a normally-off GaN high electron mobility transistor (HEMT) pressure sensor, forming a pressure sensing system by directly utilizing the HEMT as the rectifier’s load. The rectifier not only provides power to the sensor via RF-to-DC conversion but also improves the GaN HEMT’s pressure sensitivity through a positive feedback mechanism. Results show that its output voltage exhibits a significant response to pressure. The sensor achieves a sensitivity of 9.82 mV/kPa/V within the 0–170 kPa pressure range, which is 2.5 times that of traditional GaN HEMT pressure sensors.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1510-1513"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiahao Xie;Jing-Yu Lin;Yuming Li;Sai-Wai Wong;Ji-Wei Lian;Yi Wang
{"title":"A Miniaturized On-Chip Bandpass Filter With Mixed Coupling Using TGV Technology","authors":"Jiahao Xie;Jing-Yu Lin;Yuming Li;Sai-Wai Wong;Ji-Wei Lian;Yi Wang","doi":"10.1109/LMWT.2026.3684342","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3684342","url":null,"abstract":"This letter presents a glass-based on-chip filter in which coupling between adjacent resonators generates two transmission zeros (TZs) on both sides of the passband, significantly enhancing out-of-band rejection. The design employs wafer-level through-glass-via (TGV) fabrication to ensure low dielectric loss and miniaturization. Experimental results demonstrate a center frequency of 24.384 GHz with a fractional bandwidth (FBW) of 7.76%, insertion loss (IL) of 1.44 dB, and return loss (RL) greater than 13 dB. The compact footprint of <inline-formula> <tex-math>$5.1times 2.8$ </tex-math></inline-formula>mm (<inline-formula> <tex-math>$0.41lambda ~times 0.23lambda $ </tex-math></inline-formula>) highlights the effectiveness of the mixed coupling mechanism and TGV-based implementation. Measured responses align closely with simulations, validating the design for millimeter-wave (mmW) applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1378-1381"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturized SIW Single-Branch Diplexer Based on Novel Mixed-Mode Cavities","authors":"Fang Zhu;Zonghao Yin;Xin Zhao","doi":"10.1109/LMWT.2026.3682249","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3682249","url":null,"abstract":"This letter presents a miniaturized substrate-integrated waveguide (SIW) single-branch diplexer using novel mixed-mode cavities (MMCs). The first and second channels are formed by the TE<inline-formula> <tex-math>${}^{E}_{1/2,0,1}$ </tex-math></inline-formula> and TE<inline-formula> <tex-math>${}^{O}_{1,0,1}$ </tex-math></inline-formula> modes of the MMCs, respectively, whose resonant frequencies can be independently controlled, thereby enabling flexible allocation of each channel’s center frequency (CF). The internal coupling between adjacent MMCs is facilitated by a dual-mode coupling structure (DMCS), which provides fully independent control over the coupling coefficients for the two modes. Furthermore, a hybrid output feeding structure is incorporated, providing high design freedom to achieve the required external quality factor at each output while ensuring high isolation between the two output ports. A prototype is designed, fabricated, and measured, with experimental results showing excellent agreement with simulations.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1418-1421"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ken Ning;Hao Liu;Yan-Rong Zhu;Lin-Fei Gao;Xiyao Liu
{"title":"Enhancement and Regulation of Mono-Mode Bandwidth in a Slab Folded SIW","authors":"Ken Ning;Hao Liu;Yan-Rong Zhu;Lin-Fei Gao;Xiyao Liu","doi":"10.1109/LMWT.2026.3683373","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683373","url":null,"abstract":"In this article, a slab folded substrate integrated waveguide (SFSIW) is proposed for mono-mode bandwidth (MMB) enhancement. The SFSIW can be regarded as a folded substrate-integrated waveguide (FSIW) loaded with an air-via array perforated dielectric slab, where the distinct field distributions of the first two modes lead to a wider MMB than that of the FSIW. The propagation characteristics of the SFSIW are investigated and quasi-static formulas for estimating the MMB are derived. Two prototypes for exciting the first two modes of the SFSIW are designed and fabricated. The measured MMB of the SFSIW is around 11 GHz, representing an 18% improvement over that of the FSIW. Owing to its wide MMB, compact structure, and low cost, the proposed SFSIW is well suited for integrated microwave components operating in the X-/Ku-bands for satellite communication, radar systems, and other broadband microwave front-end applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1438-1441"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Compact Triple-Band Bandpass Filter With Multiple Transmission Zeros and Large Frequency Ratio Using Sub-Matrix Analysis Method","authors":"Lei Li;Shiyu Li;Mengmeng Li;Qingbo Li","doi":"10.1109/LMWT.2026.3683484","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683484","url":null,"abstract":"This letter proposes a compact triple-band bandpass filter with ten transmission zeros (TZs) and large frequency ratio, which is composed of a three-line coupled structure (TLCS) and four open-circuited stubs (OCSs). By classifying the coupled lines ports and utilizing the voltage and current constraint relationships at its ports, the Z-matrix of the input and output ports was obtained, and then the S-parameters were derived. To validate the theoretical analysis and design concept, a triple-band filter with center frequencies (CFs) of 0.86, 2.07, and 3.18 GHz was simulated, fabricated, and measured. The filter has three bandwidths (BWs) of 0.12, 1.1, and 0.13 GHz, respectively, with insertion losses (ILs) of 0.34, 0.29, and 0.36 dB. The theoretical predictions, simulated, and measured results are in good agreement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1382-1385"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniaturized High-Q Combline Bandpass Filter With Highly Controllable Transmission Zeros Using Ceramic-Lid-Loaded Coaxial Resonator","authors":"Yu Cao;Yong Liu;Junling He;Xin Xu","doi":"10.1109/LMWT.2026.3681745","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3681745","url":null,"abstract":"This letter presents a novel miniaturized high-<inline-formula> <tex-math>$Q$ </tex-math></inline-formula> combline bandpass filter (BPF) with highly controllable transmission zeros (TZs) using ceramic-lid-loaded coaxial resonator (CLLCR). The proposed CLLCR is formed by integrating a ceramic lid with a metal cavity, creating a heavily capacitively loaded structure of very compact size. Moreover, this ceramic-metal hybrid configuration enables flexible cross-coupling structures, providing a high degree of control over the TZs. As a proof-of-concept, a tenth-order BPF operating at 3.485 GHz with a 370 MHz bandwidth has been designed and implemented, and its overall dimensions of <inline-formula> <tex-math>$50times 19times 7$ </tex-math></inline-formula> mm<sup>3</sup> represent a 74% size reduction over conventional designs without ceramic loading. Meanwhile, the BPF achieves up to six controllable TZs using various cross-coupling mechanisms introduced by the proposed configuration to significantly enhance sideband selectivity. Measurements confirm the simulations, exhibiting excellent in-band performance, sharp out-of-band rejection, and a wide spurious-free range up to 9.77 GHz. Targeting 5G/5G-Advanced (5G-A) base station applications, the proposed BPF achieves a significant volume reduction and robust electrical performance compared to various alternatives.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1374-1377"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Compact High-Efficiency Rectenna Integrating Harmonic Manipulation for Battery-Free IoT Devices","authors":"Manman Cui;Chang Jun Lai;Zhi-Xia Du","doi":"10.1109/LMWT.2026.3671101","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3671101","url":null,"abstract":"In this letter, a highly integrated circularly polarized (CP) rectenna based on harmonic manipulation is proposed to achieve high rectifying efficiency and compact circuit topology. In the proposed design, a multifunctional passive CP antenna element is multiplexed as a part of the rectifying circuit to enable both harmonic control and impedance matching. Specifically, the CP antenna element with a split-ring defected ground structure (DGS) manipulates the phase of the harmonics generated by the rectifying diode, which shapes the current and voltage waveforms across the diode to minimize overlap and enhance the rectifying efficiency. In the experiment, a power management unit (PMU) with maximum power point tracking (MPPT) is also designed to regulate the output voltage of the rectenna for powering battery-free sensors.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 8","pages":"1289-1292"},"PeriodicalIF":3.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148704141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2026.3717526","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3717526","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 8","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11651581","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148704148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Collective Resonance in Dielectric Resonators and Application to Microfluidic Dielectric Spectroscopy","authors":"Nikhil Kumar;Utpal Dey","doi":"10.1109/LMWT.2026.3675988","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3675988","url":null,"abstract":"This work presents a novel technique to engineer collective resonance in a 2-D periodic array of spherical dielectric resonators sandwiched within a parallel metal plate configuration. To do so, a favorable choice of the Mie electric quadrupole (EQ) resonance mode in alumina dielectric spheres is used to generate a tightly coupled resonating array featuring a high quality factor and intense electric fields in the air-gaps between consecutive array elements. A microcapillary tube carrying the test fluid can be conveniently placed in the nonradiating field hotspots, thereby resulting in high-sensitivity dielectric spectroscopy. The microfluidic-based dielectric spectroscopy of water and commonly available chemicals is performed around 40 GHz. The collective resonance-based microfluidic sensor design is robust, easy-to-assemble, low-cost, features self-alignment, and is frequency-scalable up to sub-terahertz (THz) frequencies.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 8","pages":"1365-1368"},"PeriodicalIF":3.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148704114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}