IEEE microwave and wireless technology letters最新文献_第8页

Miniaturized Filtering Wilkinson Power Divider With Hyper-Wide Stopband/Isolated Band by Overcoupling Principle 基于过耦合原理的超宽阻带/隔离带小型化滤波威尔金森功率分压器

IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3450906

Wei Sheng Tang;Yi-Ming Zhang;Shao Yong Zheng

引用次数: 0

A 253-μW 2.4-GHz SAW-Less Mixer-First Uncertain-IF Receiver With Blocker Tolerant for Long-Distance Ultralow-Power IoT 远距离超低功耗物联网用253 μ w 2.4 ghz无saw混频器优先不确定中频接收机

IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3468610

Zheng Shen;Yuxiao Zhao;Hao Min

{"title":"A 253-μW 2.4-GHz SAW-Less Mixer-First Uncertain-IF Receiver With Blocker Tolerant for Long-Distance Ultralow-Power IoT","authors":"Zheng Shen;Yuxiao Zhao;Hao Min","doi":"10.1109/LMWT.2024.3468610","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3468610","url":null,"abstract":"This letter presents and designs a 2.4-GHz SAW-less uncertain-intermediate frequency (IF) receiver with blocker tolerant for long-distance ultralow-power (ULP) Internet of Things (IoT). By employing RF downconversion followed by noncoherent digital demodulation, the receiver maintains high sensitivity and low power. A free-running oscillator, without a power-hungry phase-locked loop, is used to generate LO with low power. Instead of a costly and bulky external SAW filter, a two-phase passive mixer combined with a low-power transimpedance amplifier (TIA) is adopted by impedance mapping to solve the low robustness to interferers of the uncertain-IF receiver; as a consequence, an equivalent on-chip RF bandpass high-Q filter is obtained to suppress the interference at the RF input and a good balance is obtained between noise figure, power, and blocker tolerance. Fabricated in a 55-nm CMOS process, at 2.4-GHz LO frequency, the receiver has a 21.4-dB rejection ratio for 10-MHz out-of-band (OB) interference, consuming only \u0000<inline-formula> <tex-math>$253~mu $ </tex-math></inline-formula>\u0000W under 0.8-V supply with 12.9-dB NF and −6.2-dBm OB-IIP3 at the front end.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1379-1382"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bandwidth-Scalable Digital Predistortion Using Multigroup Aggregation Neural Network for PAs 基于多群聚合神经网络的宽带可扩展数字预失真算法

IEEE microwave and wireless technology letters Pub Date : 2024-10-07 DOI: 10.1109/LMWT.2024.3464849

Yijie Tang;Jun Peng;Songbai He;Fei You;Xinyu Wang;Tianyang Zhong;Yuchen Bian;Bo Pang

引用次数: 0

Substrate Integrated Waveguide Filtering Crossover With High Isolation Insensitive to Bandwidth 对带宽不敏感的高隔离度基底集成波导滤波分频器

IEEE microwave and wireless technology letters Pub Date : 2024-10-04 DOI: 10.1109/LMWT.2024.3462714

Wei Shen;Tian-Le Zhou;Jun-Wei Shi;Lin-Sheng Wu

引用次数: 0

A Broadband Attenuator Using Dual-Branch Resistors and Microstrip-Line-Loaded Slotline Structure With Improved Attenuation Slope 一种使用双分支电阻器和微带线负载槽线结构的宽带衰减器，具有更好的衰减斜率

IEEE microwave and wireless technology letters Pub Date : 2024-10-02 DOI: 10.1109/LMWT.2024.3466935

Bin-Yun Han;Jin Xu;Jia-Hao Su;Ming Zhao;Fang Liu;Hao Wan

引用次数: 0

A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz 具有宽带差分模式二次谐波共振的 5.99 GHz VCO，在偏移 10 MHz 时实现 -138.9 dBc/Hz 相位噪声

IEEE microwave and wireless technology letters Pub Date : 2024-10-01 DOI: 10.1109/LMWT.2024.3466131

Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak

{"title":"A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz","authors":"Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak","doi":"10.1109/LMWT.2024.3466131","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3466131","url":null,"abstract":"This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain (\u0000<inline-formula> <tex-math>$A_{text {V}}$ </tex-math></inline-formula>\u0000). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1267-1270"},"PeriodicalIF":0.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Filtering Power Divider Employing Hybrid Quarter Circular/Cambered SIW Cavity and MSL Resonators 宽带滤波功率分配器，采用混合型四分圆/楞腔 SIW 腔体和 MSL 谐振器

IEEE microwave and wireless technology letters Pub Date : 2024-09-30 DOI: 10.1109/LMWT.2024.3462936

Ke-Long Sheng;Xiang Wang;Song-Song Qian;Boyu Sima;Zhi-Yuan Zong;Wen Wu

{"title":"Broadband Filtering Power Divider Employing Hybrid Quarter Circular/Cambered SIW Cavity and MSL Resonators","authors":"Ke-Long Sheng;Xiang Wang;Song-Song Qian;Boyu Sima;Zhi-Yuan Zong;Wen Wu","doi":"10.1109/LMWT.2024.3462936","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462936","url":null,"abstract":"In this letter, a broadband filtering power divider (FPD) based on a quarter circular/cambered substrate integrated waveguide (QCCSIW) cavity and microstrip line (MSL) resonators is proposed. First, a second-order bandpass filter (BPF) is designed based on the arc-shaped coupling of the QCCSIW. Second, a pair of quarter-wavelength (\u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000/4) MSL resonators are integrated into the QCCSIW cavity to form a fourth-order asymmetric BPF with a pair of transmission zeros (TZs). Finally, a hybrid QCCSIW and MSL FPD with isolation is investigated. For verification, all BPFs and FPD are simulated, fabricated, and measured. The proposed FPD demonstrates a center frequency of 4.99 GHz, a 3-dB fractional bandwidth (FBW) of 37.11% (1.85 GHz), and an insertion loss (IL) of 0.8 dB. The port isolation is greater than 11 dB within the entire passband. Meanwhile, a pair of TZs are generated at 3.62 and 6.35 GHz respectively. The proposed hybrid QCCSIW and MSL FPD possesses an overall size of \u0000<inline-formula> <tex-math>$1.73times 1.74~lambda _{g}$ </tex-math></inline-formula>\u0000, featuring advantages of broad bandwidth, compact size, and superior selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1247-1250"},"PeriodicalIF":0.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking 具有基底注入锁定功能的异质集成 InP RTD-SiGe BiCMOS 源

IEEE microwave and wireless technology letters Pub Date : 2024-09-30 DOI: 10.1109/LMWT.2024.3458196

E. Mutlu;C. Preuss;F. Vogelsang;R. Kress;J. Bott;B. Sievert;J. Watermann;J. Abts;A. Rennings;D. Erni;N. Pohl;N. Weimann

引用次数: 0

A W-Band Bidirectional Vector Switching Phase Shifter Using a Directional Rat-Race Coupler 使用定向鼠赛耦合器的 W 波段双向矢量开关移相器

IEEE microwave and wireless technology letters Pub Date : 2024-09-30 DOI: 10.1109/LMWT.2024.3457316

Sungwon Kwon;Byung-Wook Min

引用次数: 0

A Compact Dual-Band Rectifier Using Heterofrequency Independent Matching Technology 采用异频独立匹配技术的紧凑型双频整流器

IEEE microwave and wireless technology letters Pub Date : 2024-09-26 DOI: 10.1109/LMWT.2024.3454245

Qinghua Wang;Mei Yang;Qian Chen;Lixia Yang;Yingsong Li;Xiaolin Zhang;Wenquan Che

{"title":"A Compact Dual-Band Rectifier Using Heterofrequency Independent Matching Technology","authors":"Qinghua Wang;Mei Yang;Qian Chen;Lixia Yang;Yingsong Li;Xiaolin Zhang;Wenquan Che","doi":"10.1109/LMWT.2024.3454245","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3454245","url":null,"abstract":"This work presents a compact dual-band rectifier using heterofrequency independent matching technology (HIMT) to achieve high conversion efficiency for the application of and wireless power transmission (WPT) systems. The dual-band impedance matching network (IMN) is composed of an L-type matching network and a heterofrequency independent matching network (HIMN). Specifically, the L-type matching network is applied for the fundamental single-band matching and HIMN is applied for the other band matching by employing a series half-wavelength transmission line and a short-ended quarter-wavelength transmission line, which behave as a bandpass structure and is completely independent on the fundamental band matching. In this way, the dual-band rectifier can achieve high efficiency in both two bands and compact size with reduced design difficulty. Theoretical analysis of the dual-band rectifier using HIMN is carried out. For demonstration, a prototype of the dual-band rectifier with a compact size of \u0000<inline-formula> <tex-math>$17.5 times 15$ </tex-math></inline-formula>\u0000 mm2 is fabricated and measured. The measured results show that the maximum conversion efficiency can maintain 72.8% and 69.0% at 2.45 and 5.6 GHz, respectively, with 10.5 dBm input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1286-1289"},"PeriodicalIF":0.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0