IEEE microwave and wireless technology letters最新文献

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A 1.53-mm2 Fully Integrated Wi-Fi 7 Front-End Module With 1.65-dB NF and 41.9% FBW in 0.25-μm GaAs p-HEMT Technology 基于0.25 μm GaAs p-HEMT技术的1.53 mm2全集成Wi-Fi 7前端模块,NF为1.65 db, FBW为41.9%
IEEE microwave and wireless technology letters Pub Date : 2025-04-08 DOI: 10.1109/LMWT.2025.3553944
Pengfei Li;Kaixue Ma;Yudan Zhang;Jiaming Zhao;Hao Shi
{"title":"A 1.53-mm2 Fully Integrated Wi-Fi 7 Front-End Module With 1.65-dB NF and 41.9% FBW in 0.25-μm GaAs p-HEMT Technology","authors":"Pengfei Li;Kaixue Ma;Yudan Zhang;Jiaming Zhao;Hao Shi","doi":"10.1109/LMWT.2025.3553944","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553944","url":null,"abstract":"This letter presents a highly integrated front-end module (FEM) in 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p-HEMT) process for Wi-Fi 7 applications. The design incorporates a wideband low-noise amplifier (LNA) with a feedforward capacitor structure (FCS) demonstrating 74% fractional bandwidth (FBW) and 1.65–2.3-dB noise figure, a three-stage nonlinear power amplifier (PA) with dynamic bias optimization achieving 16.2–16.5-dBm output power and 8.5% power-added efficiency (PAE) at −43-dB error vector magnitude (EVM) for 320-MHz 4096-QAM signals under digital predistortion (DPD) and a co-designed switch with absorptive electrostatic discharge (ESD) protection supporting human body model (HBM) 2 kV. The measured results show small-signal gains of 11.9–13.9 and 28.5–31.5 dB in receive (RX) and transmit (TX) modes across 4.9–7.5 GHz. Implemented in the smallest reported die area of <inline-formula> <tex-math>$0.9times 1.7$ </tex-math></inline-formula> mm<sup>2</sup>, this work demonstrates superior integration density and performance for next-generation Wi-Fi systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"876-879"},"PeriodicalIF":0.0,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Self-Packaged Hybrid SIW Bandpass Filters With Controllable Finite Transmission Zeros 具有可控有限传输零点的紧凑自封装混合SIW带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-04-08 DOI: 10.1109/LMWT.2025.3552357
Chunfeng Fan;Yuexiao Hao;Ke Gong;Yan Liu;Jintu Sun;Qing Liu;Yufang Liu
{"title":"Compact Self-Packaged Hybrid SIW Bandpass Filters With Controllable Finite Transmission Zeros","authors":"Chunfeng Fan;Yuexiao Hao;Ke Gong;Yan Liu;Jintu Sun;Qing Liu;Yufang Liu","doi":"10.1109/LMWT.2025.3552357","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552357","url":null,"abstract":"This letter proposes two novel compact bandpass filters (BPFs) based on a self-packaged hybrid structure of substrate integrated waveguide (SIW) and stripline. The proposed filters can be equivalent to a box-like coupling scheme with several controlled diagonal cross-coupling paths, thereby providing a flexible response characterized by finite transmission zeros (FTZs). Three to four FTZs can be generated and analyzed, with flexible position adjustments. Finally, two SIW BPFs are fabricated and measured. The test results validate the feasibility of the hybrid SIW filters. Meanwhile, the use of the proposed hybrid technique achieves high selectivity and a 65% reduction in size.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"682-685"},"PeriodicalIF":0.0,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstrip Vertical Transition Design With Ultra-Broadband Passband 超宽带通带微带垂直过渡设计
IEEE microwave and wireless technology letters Pub Date : 2025-04-08 DOI: 10.1109/LMWT.2025.3554998
Ziwen Tao
{"title":"Microstrip Vertical Transition Design With Ultra-Broadband Passband","authors":"Ziwen Tao","doi":"10.1109/LMWT.2025.3554998","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3554998","url":null,"abstract":"Two broadband microstrip-to-microstrip vertical transitions are presented in this letter. The basic structure of the two proposed microstrip vertical transitions is based on the broadside coupling of the upper and lower wide strips. A wide bandwidth with two transmission poles in the passband is easily realized by the slot-coupling method. To expand the bandwidth of the slot-coupling structure, a shunt short-circuited stub is chosen to connect with the upper microstrip line to realize a three poles transition. To further expand the bandwidth, another shunt short-circuited stub is chosen to connect with the lower microstrip line to realize a four poles transition. A four poles sample transition is processed and measured. Experimental results indicate a wide frequency range of 1.25–7.35 GHz with return loss better than 10 dB can be obtained. This proposed transition has the advantages of wide bandwidth, low insertion loss, compact size, and easy implementation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"638-641"},"PeriodicalIF":0.0,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Robust Low-IF Bluetooth Receiver With Noise Suppression and Offset Elimination Schemes 具有噪声抑制和失调消除机制的高鲁棒低中频蓝牙接收器
IEEE microwave and wireless technology letters Pub Date : 2025-04-08 DOI: 10.1109/LMWT.2025.3552775
Chen Wang;Yuyang Ding;Chunli Huang;Bo Zhou;Xukun Wang;Ziyuan Chen
{"title":"A High-Robust Low-IF Bluetooth Receiver With Noise Suppression and Offset Elimination Schemes","authors":"Chen Wang;Yuyang Ding;Chunli Huang;Bo Zhou;Xukun Wang;Ziyuan Chen","doi":"10.1109/LMWT.2025.3552775","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552775","url":null,"abstract":"A low-intermediate-frequency (low-IF) Bluetooth receiver (RX) is fabricated in 65-nm CMOS, and noise suppression and offset elimination are highly focused. The low-noise amplifier (LNA) has a noise-cancellation feature with opposite polarities. By using offset-immunity schemes, double-balanced quadrature mixer and high-robust complex filter suppress image interferences and I/Q imbalances. Low-complexity dc offset compensation (DCOC) units attenuate noises and offsets of IF modules. Experimental results show that the proposed RX has an active area of 1.2 mm<sup>2</sup> and a power dissipation of 6 mW from a 1.2-V supply. The prototype RX also achieves a noise figure (NF) of 4 dB and a sensitivity of −96 dBm under a 0.5-MHz IF and 1-Mb/s data rate (DR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"734-737"},"PeriodicalIF":0.0,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-Mode Cavity Filter With Reconfigurable Bandwidth and Frequency 具有可重构带宽和频率的双模腔滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-04-07 DOI: 10.1109/LMWT.2025.3549761
Xin Fang;Yuan Chun Li;Zhentian Wu;Lixia Yang;Hao-Ran Zhu;Zhixiang Huang
{"title":"Dual-Mode Cavity Filter With Reconfigurable Bandwidth and Frequency","authors":"Xin Fang;Yuan Chun Li;Zhentian Wu;Lixia Yang;Hao-Ran Zhu;Zhixiang Huang","doi":"10.1109/LMWT.2025.3549761","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3549761","url":null,"abstract":"A frequency- and bandwidth-tunable filter based on dual-mode movable microstrip-cavity structure is proposed in this letter. The TE101 and TE011 modes of the cavity are employed as the resonant modes. To realize frequency and absolute bandwidth (ABW) tunings, a microstrip feeding line with a movable metal ground is introduced. By moving the metal ground, the external couplings of the two modes are controlled simultaneously. Dielectric posts are inserted into the cavity to independently change the frequencies of the two modes. In this approach, a dual-mode filter with reconfigurable frequency and ABW is obtained using single-cavity resonator. From the measurement, over the frequency tuning range from 8.5 to 10 GHz, variable ABWs are achieved and the insertion loss is kept below 1 dB in the tuning procedure. Hence, the proposed design possesses high-performance filtering response and wide tuning ranges, making it competitive in the multiband radio frequency (RF) front end.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"662-665"},"PeriodicalIF":0.0,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact HTS Ultra-Narrowband Bandpass Filter Using Novel Meander–Twin-Spiral Resonators With Interdigital Coupling Structure 采用新型弯曲-双螺旋谐振腔及数字间耦合结构的紧凑型超高压超导带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-04-04 DOI: 10.1109/LMWT.2025.3552630
Xuehui Guan;Chaowu Fu;Baoping Ren;Haiwen Liu
{"title":"Compact HTS Ultra-Narrowband Bandpass Filter Using Novel Meander–Twin-Spiral Resonators With Interdigital Coupling Structure","authors":"Xuehui Guan;Chaowu Fu;Baoping Ren;Haiwen Liu","doi":"10.1109/LMWT.2025.3552630","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552630","url":null,"abstract":"A six-pole high-temperature superconducting (HTS) ultra-narrowband (UNB) bandpass filter (BPF) using novel meander-twin-spiral resonators (MTSRs) with interdigital coupling structure (ICS) is proposed in this letter. ICS can introduce an additional capacitive coupling route, thus effectively reducing the total coupling between two resonators. In addition, the total coupling can be changed by tuning the loading position of the ICS while maintaining the same spacing between two coupled resonators. For demonstration, a six-pole HTS UNB BPF at 1444MHz with a fractional bandwidth of 0.14% is designed. Good agreement between the simulated and measured results validates the proposed structure and the design method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"674-677"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comments on “Two-Layer Three-Way Horst Power Divider and Combiner Based on Microstrip Line With Fixed Characteristic Impedance” 关于“基于固定特性阻抗微带线的两层三路主机分配器和合成器”的评述
IEEE microwave and wireless technology letters Pub Date : 2025-04-04 DOI: 10.1109/LMWT.2025.3545729
Myun-Joo Park
{"title":"Comments on “Two-Layer Three-Way Horst Power Divider and Combiner Based on Microstrip Line With Fixed Characteristic Impedance”","authors":"Myun-Joo Park","doi":"10.1109/LMWT.2025.3545729","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3545729","url":null,"abstract":"It is shown that the analysis by Zerfaine et al. (2023) is based on the incorrect <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> expression and leads to erroneous results. The <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> errors are proved through the exact solution of the analysis equations by Zerfaine et al. (2023) and the correct <inline-formula> <tex-math>${S} _{11}$ </tex-math></inline-formula> expression is provided.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"754-755"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Filtering Ultra-Low-Noise Amplifier Based on HISL Platform for Ku-Band Satellite Communication 基于HISL平台的ku波段卫星通信滤波超低噪声放大器
IEEE microwave and wireless technology letters Pub Date : 2025-04-04 DOI: 10.1109/LMWT.2025.3553095
Yuhao Hu;Kaixue Ma;Yongqiang Wang;Yi Wu
{"title":"A Filtering Ultra-Low-Noise Amplifier Based on HISL Platform for Ku-Band Satellite Communication","authors":"Yuhao Hu;Kaixue Ma;Yongqiang Wang;Yi Wu","doi":"10.1109/LMWT.2025.3553095","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3553095","url":null,"abstract":"This letter presents a filtering low-noise amplifier (LNA) based on novel hybrid integrated suspended line (HISL) platform for <italic>Ku</i>-band satellite communication (SATCOM). Based on the equivalent model established to characterize the optimal noise impedance of the used transistor, a bandpass filtering input matching network (IMN) is designed using the terminated coupled line structure (TCLS). Good noise matching of the entire passband is achieved due to the equivalent model-based design method. High out-of-band rejection is achieved due to multiple controllable transmission zeros (TZs) generated by TCLS, which greatly improves the flexibility and scalability of design. According to the measured results, the proposed LNA achieves a maximum gain of 25.3dB and an ultralow noise of 0.611.06dB from 9.2 to 13.1GHz. The rejection level is larger than 69 and 56dBc for the lower and higher bands, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"718-721"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-Band Low-Phase-Noise Class-F23 VCO With Common-Mode Expansion Based on a Coupling-Coexisting Transformer 基于耦合共存变压器的w波段低相位噪声f23类共模扩展压控振荡器
IEEE microwave and wireless technology letters Pub Date : 2025-04-04 DOI: 10.1109/LMWT.2025.3552632
Dong-Xin Ni;Liang Zhou;Zhaoxiang Ren;Jian Pang
{"title":"A W-Band Low-Phase-Noise Class-F23 VCO With Common-Mode Expansion Based on a Coupling-Coexisting Transformer","authors":"Dong-Xin Ni;Liang Zhou;Zhaoxiang Ren;Jian Pang","doi":"10.1109/LMWT.2025.3552632","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552632","url":null,"abstract":"This letter proposes a novel implementation for W-band Class-F<sub>23</sub> voltage-controlled oscillator (VCO). The proposed transformer exhibits magnetic coupling in both differential mode (DM) and common mode (CM), features a high <italic>Q</i>-factor in DM, and simultaneously provides implicit CM expansion. Therefore, low-phase noise and a low-flicker noise corner are achieved in this design. Harmonic control in the proposed transformer is explicitly demonstrated. The proposed VCO is fabricated using 65-nm CMOS technology. The frequency ranges from 76 to 87 GHz, with a tuning range of 12%. The measured phase noise is −102.5 dBc/Hz, with figures of merit of 183 dBc/Hz at 1-MHz offset. The power consumption of the VCO is 46 mW in an area of 0.144 mm<sup>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"706-709"},"PeriodicalIF":0.0,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Frequency Selective High-Efficiency Broadband RF Rectifier Using Dual-Branch Structure 一种采用双支路结构的高效率选频宽带射频整流器
IEEE microwave and wireless technology letters Pub Date : 2025-04-02 DOI: 10.1109/LMWT.2025.3552401
Jinghang Qin;Wenbo Liu;Dawei Yin;Tao Wang;Tianqi Wang;Yang Liu
{"title":"A Frequency Selective High-Efficiency Broadband RF Rectifier Using Dual-Branch Structure","authors":"Jinghang Qin;Wenbo Liu;Dawei Yin;Tao Wang;Tianqi Wang;Yang Liu","doi":"10.1109/LMWT.2025.3552401","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3552401","url":null,"abstract":"This letter proposes a broadband, high-efficiency radio frequency (RF) rectifier with a frequency selective topology and simple structure for wireless power transmission (WPT). The rectifier comprises two subrectifying units, without any additional matching circuits at the input end. Using its frequency selective topology, the two subrectifying units operate in the low- and high-frequency bands, respectively, ensuring efficiency and expanding the operating bandwidth. The design was validated through fabrication, and the measured results align closely with simulation data. Measurements indicate a fractional bandwidth of 84.4% (1.3–3.2 GHz), with a power conversion efficiency (PCE) exceeding 60%, peaking at 71% at an input power of 8 dBm. The efficiency remains above 50% across the 1.3–3.3-GHz range at an input power of 5 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"654-657"},"PeriodicalIF":0.0,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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