IEEE microwave and wireless technology letters最新文献

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A Novel Wideband HTS BPF With Enhanced Frequency Selectivity and Stopband Rejection 一种增强频率选择性和阻带抑制的新型宽带HTS BPF
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-13 DOI: 10.1109/LMWT.2025.3601719
Linping Feng;Jinhai Tang;Xinhua Yu;Lei Zhu;Yinggang Li
{"title":"A Novel Wideband HTS BPF With Enhanced Frequency Selectivity and Stopband Rejection","authors":"Linping Feng;Jinhai Tang;Xinhua Yu;Lei Zhu;Yinggang Li","doi":"10.1109/LMWT.2025.3601719","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3601719","url":null,"abstract":"This letter introduces a novel high-temperature superconducting (HTS) high-order wideband bandpass filter (BPF) with high-passband selectivity and deep stopband rejection. The proposed filter design employs the terminated coupled-line structures (TCLS) to achieve the desired performance characteristics. Initially, we elaborate on the working principle of the utilized TCLS, consisting of a coupled line with four terminals. In contrast to the conventional methods, our approach involves loading a cascade circuit onto two terminals of the coupled line to create two pairs of transmission zeros. In addition, one terminal of the coupled lines is short-circuited to further enhance stopband rejection and bandwidth steepness. Subsequently, we conduct a theoretical analysis of the adopted terminated coupled line structures to validate the feasibility of the approach. The proposed HTS filter is designed to operate at 3.6 GHz, and has a fractional bandwidth of 39%, a lower stopband rejection of 61 dB, an upper stopband rejection of 20 dB, and compact dimensions (<inline-formula> <tex-math>$0.327lambda _{text {g}} times 0.147lambda _{text {g}}$ </tex-math></inline-formula>) on a MgO substrate. Good agreement is observed between the simulated results and the measured ones, which demonstrates good achixevement of the desired performance of the proposed filter.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1390-1393"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Microwave and Wireless Technology Letters publication IEEE微波与无线技术通讯出版
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-09-04 DOI: 10.1109/LMWT.2026.3725452
{"title":"IEEE Microwave and Wireless Technology Letters publication","authors":"","doi":"10.1109/LMWT.2026.3725452","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3725452","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"C2-C2"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11679491","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Integrated Scheme of Convolutional Neural Network and Neural Ordinary Differential Equation of Harmonic Cancellation Digital Predistortion for High-Frequency Power Amplifier 一种基于卷积神经网络和神经常微分方程的高频功率放大器谐波抵消数字预失真集成方案
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-21 DOI: 10.1109/LMWT.2026.3683769
Jijun Ren;Xin Xue;Mengyang Zhu;Gege Feng;Yukang Li
{"title":"An Integrated Scheme of Convolutional Neural Network and Neural Ordinary Differential Equation of Harmonic Cancellation Digital Predistortion for High-Frequency Power Amplifier","authors":"Jijun Ren;Xin Xue;Mengyang Zhu;Gege Feng;Yukang Li","doi":"10.1109/LMWT.2026.3683769","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683769","url":null,"abstract":"To address the distortion caused by nonlinearity and memory effects of high-frequency power amplifiers (HF-PAs) operating in the 2- to 30-MHz band, and to overcome the inherent limitations of conventional discrete digital predistortion (DPD) models in capturing the continuous dynamics of PAs, this letter introduces neural ordinary differential equations (NODEs) into the field of DPD for the first time and proposes a novel DPD model based on a convolutional neural network (CNN) and NODE (CNN–NODE). The proposed model utilizes NODE to define the continuous dynamics of the hidden state, achieving high nonlinear fitting accuracy with lower complexity. Experimental results demonstrate that the proposed model significantly suppresses intermodulation distortion (IMD) components, while all higher-order harmonics remain below −59 dBc.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1534-1537"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Reconfigurable Metasurface for Real-Time Dynamic Control of EM Wave in Microwave Systems 一种用于微波系统中电磁波实时动态控制的可重构元表面
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-07 DOI: 10.1109/LMWT.2026.3681196
Patinavalasa Megh Sainadh;Saptarshi Ghosh
{"title":"A Reconfigurable Metasurface for Real-Time Dynamic Control of EM Wave in Microwave Systems","authors":"Patinavalasa Megh Sainadh;Saptarshi Ghosh","doi":"10.1109/LMWT.2026.3681196","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3681196","url":null,"abstract":"This letter presents a polarization-insensitive reconfigurable metasurface (RMS) that switches among multiple electromagnetic (EM) states using a field-programmable gate array (FPGA), tested in a parallel plate waveguide (PPW). The proposed geometry comprises metallic patterns and p-i-n diodes on the top and bottom of a dielectric substrate, enabling four combinations: <sc>off–off, off–on, on–off</small>, and <sc>on–on</small>. In the <sc>off–off</small> mode, transmission is achieved at 5.07 GHz with an insertion loss of 1.4 dB, whereas an absorption occurs at 5.2 GHz in <sc>off–on</small> mode. The reflective behavior is observed in <sc>on–off</small> and <sc>on–on</small> modes, operating up to 6 and 8 GHz, respectively. The design is analyzed using circuit modeling and evaluated under normal and oblique incidence. A 1-D array is fabricated and integrated with the FPGA to regulate the diodes in different modes. The prototype is measured using the PPW technique, and the experimental results closely align with simulations, demonstrating the effectiveness of the dynamically controlled RMS design in microwave systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1426-1429"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep Learning-Assisted Design of Doherty Power Amplifiers Using Discretized Topology 基于离散拓扑的Doherty功率放大器深度学习辅助设计
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-01 DOI: 10.1109/LMWT.2026.3677385
Mingyu Liu;Yongwen Yin;Yanzhou Qu;Longhao Li;Leyan Wan;Min Xiong;Changjiang Xu;Yijie Tang;Chuan Li;Fei You;Songbai He
{"title":"Deep Learning-Assisted Design of Doherty Power Amplifiers Using Discretized Topology","authors":"Mingyu Liu;Yongwen Yin;Yanzhou Qu;Longhao Li;Leyan Wan;Min Xiong;Changjiang Xu;Yijie Tang;Chuan Li;Fei You;Songbai He","doi":"10.1109/LMWT.2026.3677385","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3677385","url":null,"abstract":"This letter proposes an automated Doherty power amplifier (DPA) design methodology integrating theoretical S-parameter derivation with multiport artificial intelligence (AI) modeling. Specifically, this approach formulates DPA load-modulation requirements into explicit S-parameter targets, establishes a convolutional neural network (CNN) surrogate model for high-precision mapping, and optimizes the discretized topology to match these constraints. This strategy extends the scope of AI-assisted design, generalizing automated synthesis capabilities to complex load-modulated architectures. A fabricated 2.5–2.7 GHz DPA validates this methodology, demonstrating a saturation drain efficiency (DE) of 74%–81% at 43 dBm output power and a DE of 62%–71% at 6-dB output back-off (OBO). With digital predistortion (DPD), the design achieves an adjacent channel leakage ratio (ACLR) of −48.3 dBc under a 40-MHz 256-QAM signal with 6.3-dB peak-to-average power ratio (PAPR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1470-1473"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power Circulator Design and Performance Analysis in Extreme Temperature Environments 极端温度环境下大功率环行器设计与性能分析
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-23 DOI: 10.1109/LMWT.2026.3685633
Mohamed Mamdouh M. Ali;Syed M. Sifat;L. Talbi;Gada Saad
{"title":"High-Power Circulator Design and Performance Analysis in Extreme Temperature Environments","authors":"Mohamed Mamdouh M. Ali;Syed M. Sifat;L. Talbi;Gada Saad","doi":"10.1109/LMWT.2026.3685633","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3685633","url":null,"abstract":"This letter presents the design and experimental thermal analysis of a compact high-power circulator for operation up to <inline-formula> <tex-math>$90~^{circ }$ </tex-math></inline-formula>C in the 7–8 GHz range. Standard EM solvers cannot accurately predict high-temperature performance due to the lack of ferrite and magnetic material thermal characterization data. To overcome this, a two-stage experimental process was implemented to develop a thermal-compensation tuning method to mitigate temperature-induced resonance shifts. The circulator maintains superior performance across the <inline-formula> <tex-math>$25~^{circ }text {C}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$90~^{circ }text {C}$ </tex-math></inline-formula> range, achieving a minimum matching and isolation of 22 dB and an insertion loss of 0.20 dB while handling 1.2 kW (avg) power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1414-1417"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 32-Gb/s Continuous Time Linear Equalizer With Programmable Active Inductors Technique for Wide Channel Loss Compensation 基于可编程有源电感技术的32gb /s连续时间线性均衡器用于宽通道损耗补偿
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-22 DOI: 10.1109/LMWT.2026.3683504
Liu Wang;Chang Liu;Xiaoguang Liu;Zexin Su;Xiao Ma;Sheng Hu;Yao Liu;Franco Maloberti;Bo Li
{"title":"A 32-Gb/s Continuous Time Linear Equalizer With Programmable Active Inductors Technique for Wide Channel Loss Compensation","authors":"Liu Wang;Chang Liu;Xiaoguang Liu;Zexin Su;Xiao Ma;Sheng Hu;Yao Liu;Franco Maloberti;Bo Li","doi":"10.1109/LMWT.2026.3683504","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3683504","url":null,"abstract":"This letter presents a 32-Gb/s continuous-time linear equalizer (CTLE) with programmable active inductors (PAIs) for wide channel loss compensation. The proposed CTLE innovatively resolves the boost gain tuning range limitation of conventional source-degenerated capacitor tuning caused by parasitic capacitance via PAI adjustment, and introduces a two-stage cascaded PAIs topology to overcome PAIs’ resistor physical size constraints, enabling a wide tuning range with wideband. Additionally, a cascaded frequency-alignment stage stabilizes the peaking frequency across all boost gain levels. The chip was fabricated in a 65-nm process. Measurements demonstrate that the chip achieves a 5–12.5 dB wide boost gain tuning range with 0.42-dB steps, a peaking frequency offset within ±10%, up to 17.3 dB of channel loss compensation at 16 GHz, and a 0.48-UI horizontal eye margin at 32 Gb/s (PRBS31 pattern, BER <inline-formula> <tex-math>$lt 10^{-12}$ </tex-math></inline-formula>).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1502-1505"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Broadband Linearity-Enhanced Doherty Power Amplifier Using Complex Combining Load Impedance 基于复合负载阻抗的宽带线性增强多尔蒂功率放大器设计
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-03-31 DOI: 10.1109/LMWT.2026.3678047
Yusha Lin;Weimin Shi;Zhenxing Yang;Fan Gao;Mingyu Li
{"title":"Design of Broadband Linearity-Enhanced Doherty Power Amplifier Using Complex Combining Load Impedance","authors":"Yusha Lin;Weimin Shi;Zhenxing Yang;Fan Gao;Mingyu Li","doi":"10.1109/LMWT.2026.3678047","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3678047","url":null,"abstract":"This letter presents a design method for a broadband linearity-enhanced Doherty power amplifier (DPA). A modified Doherty combiner is adopted to mitigate the amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortions of the DPA, while a complex combining impedance is utilized to optimize the back-off efficiency over a wide bandwidth. The theoretical relationships between AM-AM/ PM and Doherty combiner parameters are derived to implement a high-linear broadband DPA, which operates in the frequency band of 0.95–1.21 GHz (a relative bandwidth of 24.1%). In this frequency band, the fabricated DPA achieves a saturation output power of 39.7–41 dBm, a saturation drain efficiency (DE) of 66%–74.7%, and a 6-dB back-off DE of 43.5%–53.4% when under excitation of a continuous-wave (CW) signal. Furthermore, when driven by a 30-MHz 64-QAM signal with a peak-to-average power ratio (PAPR) of 6.8 dB, at an average output power of approximately 33 dBm, the measured EVMs are better than 2.45% and the adjacent channel leakage ratios (ACLRs) are better than −38.3 dBc in the operating band without any digital predistortion (DPD) techniques.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1466-1469"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wideband Balanced Bandpass Filters With Superior In-Band Common-Mode Rejection 宽带平衡带通滤波器与优越的带内共模抑制
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-03-25 DOI: 10.1109/LMWT.2026.3675214
Chuan Shao;Guo-Qi Zhang;Xian-Zhen Dou;Rong Cai;Guang-Ming Chang;Kai Xu
{"title":"Wideband Balanced Bandpass Filters With Superior In-Band Common-Mode Rejection","authors":"Chuan Shao;Guo-Qi Zhang;Xian-Zhen Dou;Rong Cai;Guang-Ming Chang;Kai Xu","doi":"10.1109/LMWT.2026.3675214","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3675214","url":null,"abstract":"In this letter, a series of wideband balanced bandpass filters with superior in-band common-mode (CM) rejection has been designed and implemented, simultaneously exhibiting excellent differential-mode (DM) responses. The developed balanced bandpass filters originate from a traditional branch-line balanced filter. The merit of this topology lies in the DM equivalent circuit showing an intrinsic bandpass response, whereas the CM equivalent circuit presents a built-in bandstop response. By adjusting the coupling coefficient of the parallel-coupled lines and the characteristic impedances of the remaining sections, the developed balanced bandpass filter demonstrates a 37% fractional bandwidth for the differential mode and an in-band CM suppression greater than 50 dB over the 41% bandwidth. Moreover, to broaden the CM rejection bandwidth, a quarter-wavelength open-circuit stub was asymmetrically attached to the center of the developed filter. With the stub introduced, two extra transmission zeros emerge in the CM response, extending the bandwidth over which CM signals are suppressed. To verify the concept, two balanced bandpass filters were designed, fabricated, and measured.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1394-1397"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A W-Band Full-Coverage CMOS Power Amplifier Using Coupled-Line-Based Combining Network 基于耦合线组合网络的w波段全覆盖CMOS功率放大器
IF 3.4
IEEE microwave and wireless technology letters Pub Date : 2026-09-01 Epub Date: 2026-04-13 DOI: 10.1109/LMWT.2026.3681879
Mengru Yang;Dixian Zhao
{"title":"A W-Band Full-Coverage CMOS Power Amplifier Using Coupled-Line-Based Combining Network","authors":"Mengru Yang;Dixian Zhao","doi":"10.1109/LMWT.2026.3681879","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3681879","url":null,"abstract":"This letter presents a two-way voltage-combining CMOS power amplifier (PA), demonstrating high power gain and output power across the entire W-band. A distributed coupled-line (CL)-based model is proposed to guide an efficient design of a broadband combining network. Frequency response deviations arising from the differential-to-single-ended conversion are refined by inserting slab inductors at the primary side, realizing over 80% transfer efficiency throughout the bandwidth. The PA prototype is fabricated in a 65-nm bulk CMOS process, demonstrating a measured small-signal average gain of over 25 dB with a 3-dB bandwidth from 78 to 106 GHz. The saturated output power (<inline-formula> <tex-math>$P_{text {SAT}}$ </tex-math></inline-formula>) reaches 13.5–15.8 dBm across 75–110 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 9","pages":"1486-1489"},"PeriodicalIF":3.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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