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A 60-GHz Highly Reused Joint Radar– Communication Transceiver With Reconfigurable Dual-Mode Gilbert Cells in 65-nm CMOS 采用 65 纳米 CMOS 的可重构双模吉尔伯特单元的 60 千兆赫高度重复使用联合雷达通信收发器
IEEE microwave and wireless technology letters Pub Date : 2024-04-26 DOI: 10.1109/LMWT.2024.3390590
Lin Lu;Xujun Ma;Jing Feng;Long He;Xuewei Fan;Qin Chen;Xin Chen;Zhiqiang Liu;Jiachen Si;Xiangning Fan;Lianming Li
{"title":"A 60-GHz Highly Reused Joint Radar– Communication Transceiver With Reconfigurable Dual-Mode Gilbert Cells in 65-nm CMOS","authors":"Lin Lu;Xujun Ma;Jing Feng;Long He;Xuewei Fan;Qin Chen;Xin Chen;Zhiqiang Liu;Jiachen Si;Xiangning Fan;Lianming Li","doi":"10.1109/LMWT.2024.3390590","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3390590","url":null,"abstract":"A 60-GHz joint radar–communication (JRC) transceiver is introduced in this letter. Benefiting from a reconfigurable dual-mode Gilbert cell, which could not only operate as an upconversion mixer for the baseband signal but could also be configured as an amplifier for the LO signal, a highly reused JRC transceiver architecture is realized. In the radar mode, instead of utilizing the narrowband IF chirp modulation scheme, which is widely adopted in previous JRC systems, in this work, a wideband chirp generated directly from the LO chain could be applied for both transmitting and direct RF dechirping, thereby significantly improving the range resolution and relieving the hardware burden in radar signal processing. Fabricated in a 65-nm CMOS process, this work achieves a 16-dBm saturated TX output power, an 11-dBm OP\u0000<inline-formula> <tex-math>$_{1~mathrm {dB}}$ </tex-math></inline-formula>\u0000, and a 5.8-dB minimum RX noise figure (NF). Experiments demonstrate that the proposed JRC transceiver supports >7-Gb/s data rate in the 16-QAM over-the-air (OTA) communication as well as >4-GHz transmitted chirp bandwidth with <3.75-cm range resolution in the radar mode.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 60-GHz Phase-Locked Loop Using Standing- Wave Oscillator for Clock Distribution in 2-D Phased-Array 利用驻波振荡器在二维相控阵中分配时钟的 60 千兆赫锁相环
IEEE microwave and wireless technology letters Pub Date : 2024-04-24 DOI: 10.1109/LMWT.2024.3388933
Ying-Han You;Sih-Ying Chen;Pin-Yu Lin;Jun-Chau Chien
{"title":"A 60-GHz Phase-Locked Loop Using Standing- Wave Oscillator for Clock Distribution in 2-D Phased-Array","authors":"Ying-Han You;Sih-Ying Chen;Pin-Yu Lin;Jun-Chau Chien","doi":"10.1109/LMWT.2024.3388933","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3388933","url":null,"abstract":"This letter presents a 60-GHz analog phase-locked loop (PLL) incorporating a half-wavelength standing-wave oscillator (SWO) as part of the clock distribution network in a sub-THz 2-D phased-array transceiver. The frequency is selected as one-fourth of the target carrier frequency to comply with the 625-\u0000<inline-formula> <tex-math>$mu text{m}$ </tex-math></inline-formula>\u0000 half- wavelength element spacing requirement while facilitating array scaling. The PLL features a sampler-based phase detector (PD) and retiming flip-flop at the divider chain output to ensure minimal noise injection. Fabricated in TSMC 28-nm CMOS, the measurement results show an integrated jitter of 87.5 fsec from 1 kHz to 100 MHz. Consuming 31.35 mW of power, the presented PLL achieves a figure-of-merit of -270 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation 使用全集成 LO 发生器的 335-407-GHz 硅基次谐波混频器
IEEE microwave and wireless technology letters Pub Date : 2024-04-24 DOI: 10.1109/LMWT.2024.3389061
Jonathan Bott;David Starke;Florian Vogelsang;Jan Schöpfel;Christian Bredendiek;Klaus Aufinger;Nils Pohl
{"title":"A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation","authors":"Jonathan Bott;David Starke;Florian Vogelsang;Jan Schöpfel;Christian Bredendiek;Klaus Aufinger;Nils Pohl","doi":"10.1109/LMWT.2024.3389061","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3389061","url":null,"abstract":"This letter introduces a silicon–germanium (SiGe)-based subharmonic mixer (SHM) optimized for THz radar applications, operating at a center frequency of 360 GHz with a 3-dB bandwidth of 72 GHz. This mixer is a key component in a fully integrated receiver, featuring a wideband 90-GHz voltage-controlled oscillator (VCO), a frequency doubler stage, and power amplifier (PA) stages. The mixer exhibits a conversion gain of −6.1 dB while maintaining an excellent input compression point of >4 dBm, accompanied by a simulated noise figure (NF) of 24.8 dB. Moreover, a current consumption of only 8.6 mA underlines the energy efficiency.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10507890","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reply to Comments on “A New Approach to Design Triple-Band Filtering Power Dividers Based on Coupled Lines” 就 "基于耦合线路的三波段滤波功率分配器设计新方法 "发表的评论，请回复
IEEE microwave and wireless technology letters Pub Date : 2024-04-24 DOI: 10.1109/LMWT.2024.3389942
Zhenghai Luo;Gang Zhang;Minghan Shu;Qian Zhang;Yijie Liu;Wanchun Tang;Shichang Chen;Xiaohang Sun;Jiquan Yang
{"title":"Reply to Comments on “A New Approach to Design Triple-Band Filtering Power Dividers Based on Coupled Lines”","authors":"Zhenghai Luo;Gang Zhang;Minghan Shu;Qian Zhang;Yijie Liu;Wanchun Tang;Shichang Chen;Xiaohang Sun;Jiquan Yang","doi":"10.1109/LMWT.2024.3389942","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3389942","url":null,"abstract":"The authors express gratitude to Prof. Park for providing an alternative simplification of the isolation resistance expression in his comments, referred to as the corrected version, as well as presenting different simplified versions for impedance expressions ZA6 and ZA7. However, the claimed corrected version of the isolation resistance is just another simplification of the isolation resistance expression we provided earlier, and they are mathematically equivalent within the context of the original text.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Baseband Impedance Cancellation Technique for Wideband Multitransistor Amplifiers 宽带多晶体管放大器的基带阻抗消除技术
IEEE microwave and wireless technology letters Pub Date : 2024-04-24 DOI: 10.1109/LMWT.2024.3390594
Indy van den Heuvel;Ehsan M. Azad;Mark Omisakin-Edwards;Steve C. Cripps;Paul J. Tasker;Roberto Quaglia
{"title":"A Baseband Impedance Cancellation Technique for Wideband Multitransistor Amplifiers","authors":"Indy van den Heuvel;Ehsan M. Azad;Mark Omisakin-Edwards;Steve C. Cripps;Paul J. Tasker;Roberto Quaglia","doi":"10.1109/LMWT.2024.3390594","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3390594","url":null,"abstract":"A new baseband (BB) impedance cancellation technique is presented for broadband multitransistor amplifier designs. By placing a BB transformer in between the Doherty main and auxiliary amplifier, the BB component of a two-tone signal can be canceled out, resulting in improved efficiency, output power, and linearity over two-tone bandwidth. A 20-W, 6-dB back-off 3.5-GHz Doherty is designed and its performance is measured with and without this cancellation technique. The prototype shows significant improvements for all metrics for tone spacing above 130 MHz when the transformer is used, and it has an efficiency enhancement up to 15% points at 300-MHz tone spacing.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Voltage Quadrature Voltage-Controlled-Oscillator Using Twisted Transformer 使用双绞线变压器的低压正交压控振荡器
IEEE microwave and wireless technology letters Pub Date : 2024-04-22 DOI: 10.1109/LMWT.2024.3386332
Sheng-Lyang Jang;Yi-Ping Hsieh;Miin-Horng Juang;Jiun-Yu Sung;Wen-Cheng Lai
{"title":"Low-Voltage Quadrature Voltage-Controlled-Oscillator Using Twisted Transformer","authors":"Sheng-Lyang Jang;Yi-Ping Hsieh;Miin-Horng Juang;Jiun-Yu Sung;Wen-Cheng Lai","doi":"10.1109/LMWT.2024.3386332","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3386332","url":null,"abstract":"For low supply voltage operation, the voltage-controlled oscillator (VCO) with low voltage swing is subject to the injection pulling effect. This letter presents a low-voltage CMOS four-phase VCO using two differential LC VCOs coupled by two cross-coupled transformers. The proposed oscillator mitigates the injection-pulling effect by the 8-shaped transformers with two lobes. The transformers cancel the interference noise coupling and offer a drain-to-source transformer feedback to swing the source voltage to below ground level and to increase the voltage swing. The die area of the quadrature voltage-controlled oscillator (QVCO) in the TSMC \u0000<inline-formula> <tex-math>$0.18~mu text{m}$ </tex-math></inline-formula>\u0000 BiCMOS process is \u0000<inline-formula> <tex-math>$1.2times0.963$ </tex-math></inline-formula>\u0000 mm2. At the supply of 0.49 V, the oscillation frequency of the QVCO is 4.49 GHz and the figure of merit (FOM) is -187.032 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact High-Performance Balanced Wideband BPF With a Notch Band and Multiple Transmission Zeros 带缺口带和多个传输零点的紧凑型高性能平衡宽带 BPF
IEEE microwave and wireless technology letters Pub Date : 2024-04-22 DOI: 10.1109/LMWT.2024.3389944
Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Mingming Gao;Shaojun Fang
{"title":"Compact High-Performance Balanced Wideband BPF With a Notch Band and Multiple Transmission Zeros","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Mingming Gao;Shaojun Fang","doi":"10.1109/LMWT.2024.3389944","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3389944","url":null,"abstract":"In this letter, a novel compact high-performance balanced wideband bandpass filter with a notch band and multiple transmission zeros (TZs) based on double-sided parallel-strip line (DSPSL) structure is proposed. Compared with the half-wavelength microstrip lines, an intrinsic excellent common-mode suppression (CMS) can be realized with a small circuit size in the DSPSL structure. The wideband filtering responses are first constructed by using a short stub-loaded multimode resonator. The shorted coupled lines are utilized to introduce extra TZs on account of the transversal signal interference technique. The asymmetric three-line coupled structures are employed to create a notch band around 3.0 GHz to avoid inference signals. One filter prototype is designed, manufactured, and measured to validate the framework principle.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141286713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploiting the Coupling Variation of 3-D-Printed Cavity Filters for Complex Dielectric Permittivity Sensing 利用三维印刷空腔滤波器的耦合变化进行复杂介电常数传感
IEEE microwave and wireless technology letters Pub Date : 2024-04-22 DOI: 10.1109/LMWT.2024.3388931
Benjamin Allain;Nicolò Delmonte;Lorenzo Silvestri;Stefania Marconi;Gianluca Alaimo;Ferdinando Auricchio;Maurizio Bozzi
{"title":"Exploiting the Coupling Variation of 3-D-Printed Cavity Filters for Complex Dielectric Permittivity Sensing","authors":"Benjamin Allain;Nicolò Delmonte;Lorenzo Silvestri;Stefania Marconi;Gianluca Alaimo;Ferdinando Auricchio;Maurizio Bozzi","doi":"10.1109/LMWT.2024.3388931","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3388931","url":null,"abstract":"In this work, the design of a complex dielectric permittivity sensor based on the perturbation of the coupling between two cavity is presented. The frequency response of the coupled resonators naturally presents two resonant peaks, and the reading is obtained by comparing their frequency and their insertion loss. A glass pipe is used to hold the liquid sample to be measured. The proposed layout allows to easily obtain a differential reading using a compact topology. This lowers the effect of fabrication errors on the accuracy of the readings, making it particularly useful, for example, when employing 3-D-printed components. To demonstrate the idea, a sensor working in the X-band is designed, fabricated via additive manufacturing, assembled, and measured. The prototype is tested using the mixtures of solvents (acetone and isopropanol) at different ratios. The component results in a reading with precision within ~6.7% for \u0000<inline-formula> <tex-math>$varepsilon _{r}$ </tex-math></inline-formula>\u0000 and ~13.8% for tan\u0000<inline-formula> <tex-math>$delta $ </tex-math></inline-formula>\u0000.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology 采用 35 纳米栅长 InGaAs mHEMT 技术的 WR4.3 和 WR3.4 波段低噪声功率放大器 MMIC
IEEE microwave and wireless technology letters Pub Date : 2024-04-19 DOI: 10.1109/LMWT.2024.3388320
Fabian Thome;Arnulf Leuther
{"title":"Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology","authors":"Fabian Thome;Arnulf Leuther","doi":"10.1109/LMWT.2024.3388320","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3388320","url":null,"abstract":"This letter presents two distributed low-noise power-amplifier (LNPA) monolithic microwave integrated circuits (MMICs). The two amplifiers (DA1 and DA2) target the WR4.3 (170–260 GHz) and WR3.4 bands (220–330 GHz) as a minimum operating bandwidth (BW). The MMICs are realized in the Fraunhofer IAF 35-nm InGaAs mHEMT technology. Both amplifiers yield a small-signal gain of more than 20 dB from 110 GHz up to the corresponding upper band edges (265 and 335 GHz) and an average noise figure (NF) of 4.5 dB (110–216 GHz). Furthermore, DA1 delivers a saturated output power (\u0000<inline-formula> <tex-math>${P}_{mathrm{ sat}}$ </tex-math></inline-formula>\u0000) of 12.4–15.2 dBm with a power-added efficiency (PAE) of 3.4%–6.2% (160–255 GHz). DA2 exhibits a \u0000<inline-formula> <tex-math>${P}_{mathrm{ sat}}$ </tex-math></inline-formula>\u0000 of 10–14.5 dBm (210–335 GHz). To the best of the authors’ knowledge, DA1 and DA2 present the best NF and \u0000<inline-formula> <tex-math>${P}_{mathrm{ sat}}$ </tex-math></inline-formula>\u0000 over the full WR4.3 and WR3.4 bands, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10505304","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3-D Screen Printing: Efficient Additive Manufacturing of Groove Gap Waveguide Filters in D-Band 3-D 丝网印刷：高效增材制造 D 波段槽隙波导滤波器
IEEE microwave and wireless technology letters Pub Date : 2024-04-18 DOI: 10.1109/LMWT.2024.3387561
Kay Reuter;Patrick Boe;Daniel Miek;Michael Höft;Thomas Studnitzky;Chongliang Zhong;Thomas Weißgärber;Isabel Olaya Leon
{"title":"3-D Screen Printing: Efficient Additive Manufacturing of Groove Gap Waveguide Filters in D-Band","authors":"Kay Reuter;Patrick Boe;Daniel Miek;Michael Höft;Thomas Studnitzky;Chongliang Zhong;Thomas Weißgärber;Isabel Olaya Leon","doi":"10.1109/LMWT.2024.3387561","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3387561","url":null,"abstract":"In this letter, the design and additive manufacturing (AM) of a groove gap waveguide (GGW) filter in the D-band is presented. For this kind of filter, the manufacturing of very small periodic pin structures is necessary. The conventional manufacturing of these structures by CNC milling is time-consuming, and high-precision milling machines are extremely expensive. Other manufacturing processes such as screen printing are, therefore, required for the cost-effective and efficient production of large quantities. The screen printing process is presented, and its suitability for the production of GGW components in the millimeter-wave area is validated by a third-order bandpass filter prototype in D-band, which was manufactured and electrically characterized.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141292491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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