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Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes 数字电极间带凹槽的横向激发体声谐振器
IEEE microwave and wireless technology letters Pub Date : 2024-11-25 DOI: 10.1109/LMWT.2024.3495722
Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun
{"title":"Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes","authors":"Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun","doi":"10.1109/LMWT.2024.3495722","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3495722","url":null,"abstract":"Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient (\u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 by changing the groove size. The equivalent series capacitor (\u0000<inline-formula> <tex-math>$C_{text {r}}$ </tex-math></inline-formula>\u0000) is introduced due to the etched grooves, and consequently, \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured \u0000<inline-formula> <tex-math>$K^{2}$ </tex-math></inline-formula>\u0000 of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advanced Neural Space Mapping-Based Inverse Modeling Method for Microwave Filter Design 基于神经网络空间映射的微波滤波器反建模方法
IEEE microwave and wireless technology letters Pub Date : 2024-11-25 DOI: 10.1109/LMWT.2024.3503572
Weicong Na;Taiqi Bai;Dongyue Jin;Hongyun Xie;Wanrong Zhang;Qi-Jun Zhang
{"title":"Advanced Neural Space Mapping-Based Inverse Modeling Method for Microwave Filter Design","authors":"Weicong Na;Taiqi Bai;Dongyue Jin;Hongyun Xie;Wanrong Zhang;Qi-Jun Zhang","doi":"10.1109/LMWT.2024.3503572","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3503572","url":null,"abstract":"This letter proposes an advanced neural space mapping (NSM)-based inverse modeling method and its applications to microwave filter design. For the first time, the NSM method is introduced into inverse microwave modeling with input dimensional reduction (IDR). By using the Fourier transform and its low-frequency subspaces, we convert the S-parameter curve into a signal spectrum where the energy is concentrated in the low-frequency range, to reduce the dimension of the inverse model. We also propose a two-stage training algorithm for the NSM-based inverse model, along with its application methodology for microwave filter design. Two microwave filter design examples are presented to demonstrate the feasibility of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"12-15"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Power Characterization and Integration of Carbon Black Resistive Ink for Aerosol Jet-Printed RF Components 用于气溶胶喷射打印射频元件的炭黑电阻墨水的低功耗特性和集成
IEEE microwave and wireless technology letters Pub Date : 2024-11-22 DOI: 10.1109/LMWT.2024.3497964
Koltin Grammer;John Albrecht;Prem Chahal;Matt Hodek;John Papapolymerou
{"title":"Low-Power Characterization and Integration of Carbon Black Resistive Ink for Aerosol Jet-Printed RF Components","authors":"Koltin Grammer;John Albrecht;Prem Chahal;Matt Hodek;John Papapolymerou","doi":"10.1109/LMWT.2024.3497964","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3497964","url":null,"abstract":"Aerosol jet printing (AJP) is gaining attention in additive manufacturing research, especially in the discipline of microwave engineering. Currently, no reliable AJP method exists to fabricate resistors that are both electrically small and with a resistance compatible with waveguide impedances for use in microwave components. In this work, the commercially available Metalon JR-038 is characterized and used to fabricate a resistor that is \u0000<inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>\u0000m long by \u0000<inline-formula> <tex-math>$250~mu $ </tex-math></inline-formula>\u0000m wide for the first time to the best of our knowledge. This resistor was then used to fabricate a Ka-band Wilkinson power divider using only the AJP process.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Innovative Design Methodology of a Novel Multifunctional All-Pole Filtering Horn Antenna 一种新型多功能全极滤波喇叭天线的创新设计方法
IEEE microwave and wireless technology letters Pub Date : 2024-11-22 DOI: 10.1109/LMWT.2024.3496875
Kalyan Mohan Patnaik;Gowrish Basavarajappa;Hjalti Sigmarsson
{"title":"An Innovative Design Methodology of a Novel Multifunctional All-Pole Filtering Horn Antenna","authors":"Kalyan Mohan Patnaik;Gowrish Basavarajappa;Hjalti Sigmarsson","doi":"10.1109/LMWT.2024.3496875","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3496875","url":null,"abstract":"This letter presents a novel multifunctional all-pole filtering horn antenna in rectangular waveguide technology using an innovative design methodology. The proposed design methodology is not only systematic but also scalable to realize higher order filtering responses. For proof of concept, a fifth-order filtering pyramidal horn antenna is designed and fabricated at 10 GHz with a fractional bandwidth of 4% and realized a gain of 13.5 dBi. The realized gain of the filtering horn antenna is identical to that of the conventional horn antenna. The proposed invention leads to significant savings in size and volume and hence contributes to system miniaturization.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"35-38"},"PeriodicalIF":0.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Crossbar Mixer up to 120 GHz Based on the SISL Platform 一种基于SISL平台的120 GHz频宽混频器
IEEE microwave and wireless technology letters Pub Date : 2024-11-21 DOI: 10.1109/LMWT.2024.3497218
Dongqi Gu;Kaixue Ma;Yu Zhan;Yi Wu
{"title":"A Crossbar Mixer up to 120 GHz Based on the SISL Platform","authors":"Dongqi Gu;Kaixue Ma;Yu Zhan;Yi Wu","doi":"10.1109/LMWT.2024.3497218","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3497218","url":null,"abstract":"This letter reports a crossbar mixer based on the substrate-integrated suspended line (SISL) platform, with two contributions below. First, multistage stepped double-ridge waveguides are designed for the radio frequency (RF) signal coupling to the Schottky diode pair directly, with low-RF path loss as well as easier wideband matching. Furthermore, the surface roughness of the waveguide sidewall plating layer is measured to analyze the additional metal loss. Measurements show that the results are in reliable agreement with the simulation after considering the practical factors, including surface roughness and dielectric frequency properties. The conversion loss of this mixer is 6.16–9.84 dB within the RF range of 104–118.5 GHz, which is competitive with those in the similar frequency band that adopt advanced processing technology, yielding a good balance between the cost, weight, and performance of the circuits.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"111-114"},"PeriodicalIF":0.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Layered LiNbO3/AT-Quartz Wideband Devices With Inherent Transverse Mode Suppression 具有固有横模抑制的层状LiNbO3/ at -石英宽带器件
IEEE microwave and wireless technology letters Pub Date : 2024-11-20 DOI: 10.1109/LMWT.2024.3496911
Peisen Liu;Boyuan Xiao;Sulei Fu;Huiping Xu;Qiufeng Xu;Xinchen Zhou;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan
{"title":"Layered LiNbO3/AT-Quartz Wideband Devices With Inherent Transverse Mode Suppression","authors":"Peisen Liu;Boyuan Xiao;Sulei Fu;Huiping Xu;Qiufeng Xu;Xinchen Zhou;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan","doi":"10.1109/LMWT.2024.3496911","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3496911","url":null,"abstract":"This letter reports on a novel layered structure with inherent spurious transverse suppression for shear-horizontal surface acoustic wave (SH-SAW) wideband devices. The platform integrates a giant electromechanical coupling factor (\u0000<inline-formula> <tex-math>$k_{text {eff}}^{2}$ </tex-math></inline-formula>\u0000) lithium niobate (LN) thin film with a commercially available AT-quartz substrate characterized by strong concave shear horizontal slowness, inherently suppressing transverse modes through slowness curve manipulation. We compared the proposed LN/AT-quartz platform with prevalent LN/SiO2/Si structure through 3-D finite-element analyses and device measurements, theoretically and experimentally verifying the superior capability of AT-quartz for transverse mode suppression. Besides large \u0000<inline-formula> <tex-math>$k_{text {eff}}^{2}$ </tex-math></inline-formula>\u0000 over 20%, maximum quality factor (\u0000<inline-formula> <tex-math>$Q_{max }$ </tex-math></inline-formula>\u0000) exceeding 800, and spurious-free responses up to 6 GHz achieved in fabricated LN/AT-quartz resonators, transverse modes were inherently mitigated in LN thin-film layered surface acoustic wave (SAW) devices for the first time. The fabricated synchronous gigahertz filter shows a 3-dB fractional bandwidth (FBW) of 10.5%, a minimum insertion loss (ILmin) of 0.36 dB, and flat passband with transverse modes well inherently suppressed utilizing standard interdigital transducer (IDT) layout.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"119-122"},"PeriodicalIF":0.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing Microwave Heating Uniformity in Cavities Using a 2-bit Coding Metasurface 利用2位编码超表面增强腔内微波加热均匀性
IEEE microwave and wireless technology letters Pub Date : 2024-11-18 DOI: 10.1109/LMWT.2024.3493234
Zhongyin Peng;Chengrong Wang;Changjun Liu;Xiang Zhao;Liping Yan
{"title":"Enhancing Microwave Heating Uniformity in Cavities Using a 2-bit Coding Metasurface","authors":"Zhongyin Peng;Chengrong Wang;Changjun Liu;Xiang Zhao;Liping Yan","doi":"10.1109/LMWT.2024.3493234","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3493234","url":null,"abstract":"A novel method for enhancing microwave heating uniformity using a 2-bit coding metasurface is proposed. This metasurface is specially designed to scatter incident waves into multiple directions at 2.45 GHz rather than just one, significantly improving the electric field distribution uniformity within a cavity, and eliminating the need to redesign the cavity itself or modify the power excitation. Simulated results demonstrate a reduction in the coefficient of variation (COV) of potato temperature from 0.694 to 0.461, indicating enhanced heating uniformity while maintaining efficiency. Additionally, the measured potato temperatures show excellent agreement with the simulated results, validating the effectiveness of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"107-110"},"PeriodicalIF":0.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved HIE-FDTD Method for Simulating Thin Layer Structure in Linear Dispersive Media 线性色散介质中薄层结构模拟的改进HIE-FDTD方法
IEEE microwave and wireless technology letters Pub Date : 2024-11-15 DOI: 10.1109/LMWT.2024.3496078
Yue Wu;Haoran Xing;Chaoyi Ma;Chao Fan;Mengjun Wang;Hongxing Zheng;Erping Li
{"title":"Improved HIE-FDTD Method for Simulating Thin Layer Structure in Linear Dispersive Media","authors":"Yue Wu;Haoran Xing;Chaoyi Ma;Chao Fan;Mengjun Wang;Hongxing Zheng;Erping Li","doi":"10.1109/LMWT.2024.3496078","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3496078","url":null,"abstract":"To accurately simulate the thin layer of linear dispersive media, an improved 3-D finite-difference time-domain (FDTD) method is proposed. The inclusion of a weak conditionally stabilized hybrid implicit-explicit (HIE) FDTD method overcomes the Courant-Friedrichs–Lewy (CFL) condition. In addition, the piecewise linear recursive convolution (PLRC) method enhances the original HIE-FDTD method, and a unified form of the polarization parameter is employed to simplify the model of linear dispersive media. The improved method reduces computational memory requirements and enhances computational efficiency. Numerical results demonstrate the accuracy and effectiveness of the proposed method when compared with traditional FDTD and the original HIE-FDTD methods. Furthermore, the proposed method can be easily applied to multilayer thin-film systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"4-7"},"PeriodicalIF":0.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Harmonic Suppression Low-Pass Filters With Stacked Dual RDL Structures Using 3-D Glass-Based Advanced Packaging Technology 紧凑的谐波抑制低通滤波器与堆叠双RDL结构采用三维玻璃为基础的先进封装技术
IEEE microwave and wireless technology letters Pub Date : 2024-11-15 DOI: 10.1109/LMWT.2024.3492341
Qi Zhang;Yazi Cao;Gaofeng Wang
{"title":"Compact Harmonic Suppression Low-Pass Filters With Stacked Dual RDL Structures Using 3-D Glass-Based Advanced Packaging Technology","authors":"Qi Zhang;Yazi Cao;Gaofeng Wang","doi":"10.1109/LMWT.2024.3492341","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3492341","url":null,"abstract":"Two compact low-pass filters (LPFs) with high harmonic suppression are designed using the 3-D glass-based advanced packaging technology. In these two LPF designs, a new multilayer inductor is introduced by virtue of stacked dual redistribution layer (RDL) structures, which can achieve higher Q factor and much larger inductance in the operating bands. To achieve high harmonic suppression, these two LPFs are designed with multiple transmission zeros generated outside each operating band and fabricated on the through-glass-via (TGV) technology. The compact size of these two LPF designs can be achieved by virtue of the high Q performance and large inductance of the multilayer inductors. These two LPFs (called LPF 1 and LPF 2), which are operating in the bands of dc—0.5 and 0.1–0.5 GHz, can achieve insertion losses lower than 1.2 and 1.5 dB and return losses better than 17 and 16 dB, respectively. More than 25-dB harmonic suppression is achieved up to 6 GHz (\u0000<inline-formula> <tex-math>$24~f_{{0}}$ </tex-math></inline-formula>\u0000) by LPF 1, whereas 18-dB rejection is achieved up to 6 GHz (\u0000<inline-formula> <tex-math>$30~f_{{0}}$ </tex-math></inline-formula>\u0000) by LPF 2. The sizes of these two LPFs are only \u0000<inline-formula> <tex-math>$2.0times 1.0times 0.35$ </tex-math></inline-formula>\u0000 mm and \u0000<inline-formula> <tex-math>$2.0times 1.5times 0.35$ </tex-math></inline-formula>\u0000 mm, respectively. The simulation and measured results show good consistency.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"47-50"},"PeriodicalIF":0.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 75.4–102.4-GHz Power Amplifier With 27.7−dB Gain and 16.9% PAE in 65-nm CMOS
IEEE microwave and wireless technology letters Pub Date : 2024-11-14 DOI: 10.1109/LMWT.2024.3489660
Bo Fu;Xiao Ding
{"title":"A 75.4–102.4-GHz Power Amplifier With 27.7−dB Gain and 16.9% PAE in 65-nm CMOS","authors":"Bo Fu;Xiao Ding","doi":"10.1109/LMWT.2024.3489660","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3489660","url":null,"abstract":"This letter presents a W-band wideband high-gain power amplifier (PA) with 65-nm CMOS technology. An inductor-series high-coupled transformer is proposed and combined with a weakly coupled transformer to form the hybrid interstage matching network, and thereby, the bandwidth of the four-stage PA is extended by the proposed gain-complementary bandwidth extension technique. The proposed PA achieves a measured peak gain of 27.7 dB with a 3-dB bandwidth from 75.4 to 102.4 GHz. The saturated output power (Psat), 1-dB output compression point (OP1dB), and the peak power-added efficiency (PAE) are 12.5, 10.2 dBm, and 16.9%, respectively. The measurement results are in good agreement with the simulation results, and the core chip area of the proposed PA is <inline-formula> <tex-math>$170times 600~mu $ </tex-math></inline-formula>m.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"213-216"},"PeriodicalIF":0.0,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143404015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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