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360° Balanced Tunable Reflection-Type Phase Shifter With High Common-Mode Suppression 360°平衡可调反射型移相器与高共模抑制
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3519309
Lei-Lei Qiu;Yiming Guo;Zhi-Chong Zhang;Lianwen Deng;Lei Zhu
{"title":"360° Balanced Tunable Reflection-Type Phase Shifter With High Common-Mode Suppression","authors":"Lei-Lei Qiu;Yiming Guo;Zhi-Chong Zhang;Lianwen Deng;Lei Zhu","doi":"10.1109/LMWT.2024.3519309","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519309","url":null,"abstract":"A balanced tunable reflection-type phase shifter (RTPS) with a broad phase shift range (PSR) and high common-mode (CM) suppression is proposed. The configuration includes two identical reflection loads, comprising two varactor diodes connected in parallel at the output ports of a coupled line and a six-port balanced-to-unbalanced quadrature coupler. The coupler rejects CM signals and supplies quadrature phase to the reflection loads, whereas the electronic-controlled diodes in the reflection loads enable tunable phase shift. The RTPS is capable of precisely attaining 365° PSR and 25 dB CM rejection, and can therefore be implemented in balanced antenna systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"298-301"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections 4.2 db噪声图和20 db增益92 - 115 ghz GaAs LNA与热孔互连
IEEE microwave and wireless technology letters Pub Date : 2024-12-30 DOI: 10.1109/LMWT.2024.3520229
Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti
{"title":"4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections","authors":"Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti","doi":"10.1109/LMWT.2024.3520229","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3520229","url":null,"abstract":"Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"334-337"},"PeriodicalIF":0.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10817650","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency Symmetrical Doherty Power Amplifier With Back-Off Reconfigurability 具有回退可重构性的高效对称Doherty功率放大器
IEEE microwave and wireless technology letters Pub Date : 2024-12-26 DOI: 10.1109/LMWT.2024.3517706
Leyan Wan;Songbai He;Cheng Zhong;Tianyang Zhong;Mingyu Liu;Yuchen Bian;Haiqian Tang;Chuan Li;Fei You
{"title":"A High-Efficiency Symmetrical Doherty Power Amplifier With Back-Off Reconfigurability","authors":"Leyan Wan;Songbai He;Cheng Zhong;Tianyang Zhong;Mingyu Liu;Yuchen Bian;Haiqian Tang;Chuan Li;Fei You","doi":"10.1109/LMWT.2024.3517706","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3517706","url":null,"abstract":"This letter presents the design of a symmetrical Doherty power amplifier (DPA) with output power back-off (OBO) range reconfigurability by using a new and explicit circuit model. The theoretical analysis reveals that OBO range (>9 dB) can be extended and controlled without changing the circuit structure, taking advantage of the phase shift of DPA matching subnetworks and adjusting the drain bias. To verify the proposed theory, a DPA is designed across 2–2.4 GHz with a 9-dB OBO range. Also, 11 dB can be further implemented by drain bias adjusting. The experimental results show drain efficiencies of 47%–52% at 9-dB OBO levels and 45%–49% at 11-dB OBO levels across 2–2.4 GHz, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"209-212"},"PeriodicalIF":0.0,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Balanced Bandpass Filter With High-Selectivity and Common-Mode Suppression Based on Inverted Microstrip Gap Waveguide 基于反向微带隙波导的高选择性和共模抑制平衡带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2024-12-26 DOI: 10.1109/LMWT.2024.3519787
Feng Wei;Xing-Chen Zhou;Zeng-Hui Shi;Hong-Yu Liu;Pei-Yuan Qin
{"title":"A Balanced Bandpass Filter With High-Selectivity and Common-Mode Suppression Based on Inverted Microstrip Gap Waveguide","authors":"Feng Wei;Xing-Chen Zhou;Zeng-Hui Shi;Hong-Yu Liu;Pei-Yuan Qin","doi":"10.1109/LMWT.2024.3519787","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519787","url":null,"abstract":"In this letter, a balanced bandpass filter (BPF) is reported by stacking two cavity resonators based on inverted microstrip gap waveguide (MGW). The proposed balanced feed structure achieves deep and wide common-mode (CM) suppression for the first time in a gap waveguide (GW) structure based on a mushroom-type electromagnetic bandgap (EBG) cell package. A highly selective balanced fourth-order bandpass response with three out-of-band transmission zeros (TZs) and CM suppression is achieved by employing a pin-loaded patch perturbation structure at the center of the upper and lower cavities and a pair of slots on the common ground. A prototype of the stacked GW balanced BPF exhibiting a high selectivity was fabricated and measured. The measured results are in good agreement with the simulated ones.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"181-184"},"PeriodicalIF":0.0,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave Armstrong Amplitude Modulator 微波阿姆斯壮调幅器
IEEE microwave and wireless technology letters Pub Date : 2024-12-25 DOI: 10.1109/LMWT.2024.3513315
Eugene N. Ivanov
{"title":"Microwave Armstrong Amplitude Modulator","authors":"Eugene N. Ivanov","doi":"10.1109/LMWT.2024.3513315","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3513315","url":null,"abstract":"We describe a microwave amplitude modulator capable of operating at high modulation rates (limited by mixer IF port bandwidth) with minimal residual phase modulation. The modulator is based on Armstrong’s idea to produce any modulated signal by varying the phase shift between the carrier and modulation sidebands. We conducted our experiments at 11 GHz. The frequency of the modulation signal was below 1 MHz to measure the residual phase modulation with the digital phase detector (DPD). We showed that the phase noise of the microwave pilot signal was the main factor limiting the minimal detectable level of the residual phase modulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"229-232"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Differential Low-Pass Filter With Wide Upper Stopband and Excellent Common-Mode Suppression 差分低通滤波器具有宽上阻带和优良的共模抑制
IEEE microwave and wireless technology letters Pub Date : 2024-12-25 DOI: 10.1109/LMWT.2024.3515033
Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang
{"title":"A Differential Low-Pass Filter With Wide Upper Stopband and Excellent Common-Mode Suppression","authors":"Shipeng Zhao;Zhongbao Wang;Hongmei Liu;Shaojun Fang","doi":"10.1109/LMWT.2024.3515033","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3515033","url":null,"abstract":"A compact high-performance differential low-pass filter (LPF) based on the double-sided parallel-strip line (DSPSL) structure is proposed simultaneously, featuring a wide upper stopband and excellent common-mode (CM) suppression. The intrinsic CM noise suppression can be realized with a compact circuit size due to the DSPSL phase inverter. For the differential-mode signal excitation, the low-pass response with small insertion loss (IL) and superior out-of-band rejection is exhibited. For practice, the fabricated and measured differential LPF prototype with the 1-dB cutoff frequency <inline-formula> <tex-math>$f_{text {c}}$ </tex-math></inline-formula> of 1.0 GHz demonstrates up to <inline-formula> <tex-math>$14f_{text {c}}$ </tex-math></inline-formula> of a wide upper stopband rejection over 20 dB. In addition, the excellent CM suppression is better than 40 dB over the entire measured frequency range from 0 to <inline-formula> <tex-math>$14f_{text {c}}$ </tex-math></inline-formula>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"177-180"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.7–6.5-GHz 35-W Reactively Matched GaN Power Amplifier Using a Balance-Enhanced Power Distribution Network 基于平衡增强配电网络的1.7 - 6.5 ghz 35w无功匹配GaN功率放大器
IEEE microwave and wireless technology letters Pub Date : 2024-12-25 DOI: 10.1109/LMWT.2024.3501308
Yuhang Zhang;Xiaofan Chen;Wenhua Chen;Zhenghe Feng;Fadhel M. Ghannouchi
{"title":"A 1.7–6.5-GHz 35-W Reactively Matched GaN Power Amplifier Using a Balance-Enhanced Power Distribution Network","authors":"Yuhang Zhang;Xiaofan Chen;Wenhua Chen;Zhenghe Feng;Fadhel M. Ghannouchi","doi":"10.1109/LMWT.2024.3501308","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3501308","url":null,"abstract":"In this letter, a 1.7–6.5-GHz reactively matched power amplifier (RMPA) is designed using a 0.2-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m gallium nitride (GaN) high-electron mobility transistor (HEMT) process. To achieve an output power of more than 30 W, eight transistors are required in the power stage. The coupling effects and the asymmetry of the layout result in a significant imbalance among these transistors, which could deteriorate the performance of the power amplifier (PA). We propose a novel power distribution network (PDN) based on tightly coupled lines to mitigate the imbalance introduced by the compact interstage matching network (ISMN). The fabricated RMPA achieves an output power of 35 W and a PAE of 38%–50% under continuous-wave (CW) test.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"201-204"},"PeriodicalIF":0.0,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Storage Optimization Scheme for PITD Method Using Sparse Matrix-Vector Multiplication 基于稀疏矩阵向量乘法的PITD方法存储优化方案
IEEE microwave and wireless technology letters Pub Date : 2024-12-24 DOI: 10.1109/LMWT.2024.3516877
Liang Ma;Xikui Ma;Mingjun Chi;Ru Xiang;Xiaojie Zhu
{"title":"A Storage Optimization Scheme for PITD Method Using Sparse Matrix-Vector Multiplication","authors":"Liang Ma;Xikui Ma;Mingjun Chi;Ru Xiang;Xiaojie Zhu","doi":"10.1109/LMWT.2024.3516877","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3516877","url":null,"abstract":"An improved variant of the precise-integration time-domain (PITD) method is proposed to eliminate the inverse matrix calculation and optimize the storage burden with the help of sparse computation. First, the dimensional expanding (DE) scheme is incorporated into PITD to address the matrix inversion problem due to external sources. Then, the dense matrix exponential is absorbed in sparse matrix-vector multiplications (SpMVs) without explicit evaluation. This SpMV-based technique involves only one sparse matrix and can utilize sparse computation efficiently, so as to greatly reduce memory costs ascribed to the matrix exponential. Moreover, the theoretical analysis of the algorithm performance is presented. The numerical results verify the validity and efficiency of the proposed method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"145-148"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-Elliptic Dual-Band Bandpass Filter Using Flexible Mixed Coupling of Inverted-L-Shape Coaxial Resonator 利用倒l形同轴腔柔性混合耦合的准椭圆双带带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2024-12-24 DOI: 10.1109/LMWT.2024.3519338
Chao Wu;Shu-Qing Zhang;Sai-Wai Wong
{"title":"Quasi-Elliptic Dual-Band Bandpass Filter Using Flexible Mixed Coupling of Inverted-L-Shape Coaxial Resonator","authors":"Chao Wu;Shu-Qing Zhang;Sai-Wai Wong","doi":"10.1109/LMWT.2024.3519338","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3519338","url":null,"abstract":"This letter introduces a compact inverted-L-shaped coaxial dual-band bandpass filter (BPF) with multiple transmission zeros (TZs). The structure uses mixed coupling between adjacent resonators to generate TZs. Notably, mixed coupling can produce <inline-formula> <tex-math>$N-1$ </tex-math></inline-formula> TZs with the Nth-order filter, significantly enhancing the frequency selectivity of the dual-band filter. A key advantage of this design is the ability to achieve arbitrary placement of the TZs without requiring any additional structures, allowing for independent control of both electric and magnetic coupling. To validate this concept, the dual-band BPF was designed, fabricated, and tested, with the final test results showing good agreement with the simulated results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"185-188"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetric SiGe BiCMOS SPDT Switch With 210 fs RON × COFF for 5G Applications 非对称SiGe BiCMOS SPDT开关，210秒RON × COFF，适用于5G应用
IEEE microwave and wireless technology letters Pub Date : 2024-12-24 DOI: 10.1109/LMWT.2024.3514883
Kejie Hu;Kaixue Ma;Jiancheng Huang;Haipeng Fu
{"title":"Asymmetric SiGe BiCMOS SPDT Switch With 210 fs RON × COFF for 5G Applications","authors":"Kejie Hu;Kaixue Ma;Jiancheng Huang;Haipeng Fu","doi":"10.1109/LMWT.2024.3514883","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3514883","url":null,"abstract":"This article presents a compact high-linearity single-pole double-throw (SPDT) switch built using a 0.13-<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>m SiGe BiCMOS technology for Ka-band 5G. The body-floating technique (BFT) based on the deep-n-well (DNW) transistor is used in the asymmetric structure to decrease substrate leakage and improve the power-handling capability in TX mode. Advanced performances have been achieved from the RF switch point of view with 210 fs <inline-formula> <tex-math>${R}_{text{ON}} times {C}_{text{OFF}}$ </tex-math></inline-formula>. The proposed design achieved a minimum insertion loss (IL) of 0.53/1.33 dB including pad losses, isolation of more than 21/15 dB, and IP1dB of 20/8.5 dBm in TX/RX mode. The measured IIP3 is 34.3/28 dBm at 28 GHz. The active chip area is 0.046 mm2. In contrast to the conventional structure with heterojunction bipolar transistor (HBT) or PIN diodes in SiGe process, the proposed SPDT exhibits good performances with a compact area for modern asymmetric front-end applications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 2","pages":"225-228"},"PeriodicalIF":0.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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