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All-Port-Reflectionless Wideband Filtering Power Divider Using Five-Line Coupled Structure 采用五线耦合结构的全端口无反射宽带滤波功率分配器
IEEE microwave and wireless technology letters Pub Date : 2024-10-29 DOI: 10.1109/LMWT.2024.3471828
Yan Zhang;Hongmei Liu;Shuyi Chen;Zhongbao Wang;Shaojun Fang
{"title":"All-Port-Reflectionless Wideband Filtering Power Divider Using Five-Line Coupled Structure","authors":"Yan Zhang;Hongmei Liu;Shuyi Chen;Zhongbao Wang;Shaojun Fang","doi":"10.1109/LMWT.2024.3471828","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3471828","url":null,"abstract":"In the letter, a compact all-port-reflectionless wide- band filtering power divider (FPD) is proposed, which consists of a five-coupled-line (FCL), an isolated resistor, and input/output absorptive networks. The FCL is first introduced for designing wideband FPD, where miniaturization can be maintained. In addition, all-port-reflectionless behavior is realized by the integration of three absorptive networks. To verify, a prototype centered at 1.8 GHz is implemented, owning a compact footprint of \u0000<inline-formula> <tex-math>$0.39lambda _{mathrm {g}} times 0.11lambda _{mathrm {g}}$ </tex-math></inline-formula>\u0000. Results demonstrate that it exhibits a 3-dB passband fractional bandwidth (FBW) of larger than 70% with more than 270% all-port- reflectionless bandwidth, which shows prior features compared with state-of-the-art reflectionless FPDs.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"31-34"},"PeriodicalIF":0.0,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave Radiometer Calibration Using Low-Noise Amplifier as Calibration Source 用低噪声放大器作为定标源的微波辐射计标定
IEEE microwave and wireless technology letters Pub Date : 2024-10-28 DOI: 10.1109/LMWT.2024.3474971
Reuben Neate;Tinus Stander
{"title":"Microwave Radiometer Calibration Using Low-Noise Amplifier as Calibration Source","authors":"Reuben Neate;Tinus Stander","doi":"10.1109/LMWT.2024.3474971","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3474971","url":null,"abstract":"We present a novel method for built-in noise and gain calibration of a total power radiometer using a low-noise amplifier (LNA) as the calibration source. A terminated LNA’s biasing is varied to obtain multiple calibration points, with the novel postprocessing method accounting for both radiometer nonlinearity and unknown LNA parameters. This method allows for a built-in radiometer calibration without a calibrated resistive or diode noise source, instead using an internal thermometer measurement as a reference. The method is demonstrated by measuring a thermal load to a 24-GHz water vapor radiometer (WVR), achieving a mean error of 0.43 K over the band of interest under \u0000<inline-formula> <tex-math>$45~^{circ } $ </tex-math></inline-formula>\u0000C ambient temperature variation. It is further shown that the calibration data can be used to estimate the radiometer’s gain to within 1.41 dB and noise figure (NF) to within 0.55 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Low-Loss High-Reliability Antenna T/R Switch Embedded in Power Combiner for 60-GHz Fully Differential PA and LNA 用于60ghz全差分PA和LNA的紧凑型低损耗高可靠性天线收发开关
IEEE microwave and wireless technology letters Pub Date : 2024-10-28 DOI: 10.1109/LMWT.2024.3478843
Jing Feng;Yue Liang;Xiaokang Niu;Lin Lu;Xin Chen;Depeng Cheng;Qin Chen;Lei Luo;Xu Wu;Xiangning Fan;Lianming Li
{"title":"A Compact Low-Loss High-Reliability Antenna T/R Switch Embedded in Power Combiner for 60-GHz Fully Differential PA and LNA","authors":"Jing Feng;Yue Liang;Xiaokang Niu;Lin Lu;Xin Chen;Depeng Cheng;Qin Chen;Lei Luo;Xu Wu;Xiangning Fan;Lianming Li","doi":"10.1109/LMWT.2024.3478843","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3478843","url":null,"abstract":"This letter proposes an antenna transmit/receive (T/R) switch embedded in the power combiner of the two-way power amplifier (PA) and realizes a 60-GHz fully differential T/R front end (FE). Compared with the traditional standalone single-pole-double-throw (SPDT) switch, only one switch transistor is needed in the PA power combiner and reused for both transmit (TX) and receive (RX) modes, thereby significantly reducing the chip area and the insertion loss. With careful codesign of the switch with the PA and low-noise amplifier (LNA) matching networks, the insertion loss introduced by the switch and the loading effect could be reduced to 0.5 and 1 dB in the TX and RX modes, respectively. Fabricated in a 65-nm CMOS process, the PA achieves a power gain, OP\u0000<inline-formula> <tex-math>$_{mathrm {1, dB}}$ </tex-math></inline-formula>\u0000, \u0000<inline-formula> <tex-math>${P} _{mathrm {sat}}$ </tex-math></inline-formula>\u0000, and PAEmax of 25 dB, 11 dBm, 16 dBm, and 16%, respectively. Benefitting from the low loss of the switch, the LNA attains a peak gain and noise figure (NF) of 25 and 6.4 dB, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"39-42"},"PeriodicalIF":0.0,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 24–64 GHz Wideband Static CML Frequency Divider in a 90-nm CMOS Technology 基于90纳米CMOS技术的24-64 GHz宽带静态CML分频器
IEEE microwave and wireless technology letters Pub Date : 2024-10-25 DOI: 10.1109/LMWT.2024.3479166
Abinash Patnaik;Daekeun Yoon
{"title":"A 24–64 GHz Wideband Static CML Frequency Divider in a 90-nm CMOS Technology","authors":"Abinash Patnaik;Daekeun Yoon","doi":"10.1109/LMWT.2024.3479166","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3479166","url":null,"abstract":"This letter presents a divide-by-2 static current-mode logic (CML) frequency divider with inductive peaking. While inductive peaking frequency dividers feature a high-Q resonator that limits the operation range, a frequency tuning technique has been implemented to extend the operation range. An nMOS transistor pair has been employed at the source of the cross-coupled pair to adjust the current flow and output node capacitance, thereby modifying the frequency divider’s operation range. Fabricated in 90-nm CMOS, the frequency divider occupies a core chip area of \u0000<inline-formula> <tex-math>$170times 240~mu $ </tex-math></inline-formula>\u0000m2 and achieves an operation range of 90.9% (24–64 GHz). It dissipates a maximum dc power of 30.1 mW from a 1.2 V supply voltage.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"71-74"},"PeriodicalIF":0.0,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Efficient Higher-Order PML Algorithm Based on the Direct Integration Method 一种基于直接积分法的高效高阶PML算法
IEEE microwave and wireless technology letters Pub Date : 2024-10-25 DOI: 10.1109/LMWT.2024.3474773
Kun-Lai Li;Zhengpeng Wang;Yongliang Zhang
{"title":"An Efficient Higher-Order PML Algorithm Based on the Direct Integration Method","authors":"Kun-Lai Li;Zhengpeng Wang;Yongliang Zhang","doi":"10.1109/LMWT.2024.3474773","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3474773","url":null,"abstract":"An efficient higher-order (HO) perfectly matched layer (PML) algorithm based on the direct integration (DI) method is proposed for terminating finite-difference time-domain (FDTD) grids. Unlike the vast majority of HO-PML formulas where the spatial differentiation terms have coefficients associated with the PML parameters, the proposed HO-PML is derived by rearranging the PML tensors and converting the update formulas into the sum of the standard FDTD formulas and the PML auxiliary variables. Consequently, the proposed HO-PML is fully independent of the host media in the FDTD computational domain at the code level and is named the DI-HO-iPML, with the letter “i” indicating this characteristic. In addition, by splitting the HO difference equation according to each time step, an algorithm to reduce the memory footprint of the HO difference equation is proposed for the first time and applied to the DI-HO-iPML algorithm. Theoretical analysis shows that the DI-HO-iPML has the advantages of time-saving and universality. An unmagnetized plasma half-space problem is simulated to validate the DI-HO-iPML.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"8-11"},"PeriodicalIF":0.0,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 50-GHz SiGe Frequency Quadrupler With 42-dBc Harmonic Rejection and 17% Peak Total Efficiency 具有42 dbc谐波抑制和17%峰值总效率的50 ghz SiGe频率四倍器
IEEE microwave and wireless technology letters Pub Date : 2024-10-24 DOI: 10.1109/LMWT.2024.3475929
Wonsub Lim;Arya Moradinia;Yaw A. Mensah;Jeffrey W. Teng;Christopher T. Coen;Nelson E. Lourenco;John D. Cressler
{"title":"A 50-GHz SiGe Frequency Quadrupler With 42-dBc Harmonic Rejection and 17% Peak Total Efficiency","authors":"Wonsub Lim;Arya Moradinia;Yaw A. Mensah;Jeffrey W. Teng;Christopher T. Coen;Nelson E. Lourenco;John D. Cressler","doi":"10.1109/LMWT.2024.3475929","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475929","url":null,"abstract":"This letter introduces a highly efficient 50-GHz SiGe frequency quadrupler with exceptional harmonic rejection capabilities. Utilizing a design comprised of two consecutive doublers, it features a truly symmetric transformer balun with LC matching topology and ensures maximal rejection of odd harmonics with high total efficiency. The transformer balun achieves remarkably a low amplitude imbalance of 0.03 dB and a phase imbalance of 0.3° within the 3-dB fractional bandwidth from 48 to 52 GHz and exhibits a minimum harmonic rejection ratio (HRR) of 42 dBc from the fundamental to the seventh harmonic. The device delivers a peak output power of 5.4 dBm at an input power of 1 dBm, maintaining a high peak total efficiency of 17%. According to the best of authors’ knowledge, this represents the highest HRR and total efficiency found to date among all E-, U-, V-, and W-band frequency quadruplers.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1371-1374"},"PeriodicalIF":0.0,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Octa-Port Dual-Polarized Antenna/Rectenna for MIMO Simultaneous Wireless Information and Power Transfer (SWIPT) 用于MIMO同步无线信息和功率传输（SWIPT）的八端口双极化天线/整流天线
IEEE microwave and wireless technology letters Pub Date : 2024-10-24 DOI: 10.1109/LMWT.2024.3479326
Suraj Kumar Gupta;Ashwani Sharma
{"title":"Octa-Port Dual-Polarized Antenna/Rectenna for MIMO Simultaneous Wireless Information and Power Transfer (SWIPT)","authors":"Suraj Kumar Gupta;Ashwani Sharma","doi":"10.1109/LMWT.2024.3479326","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3479326","url":null,"abstract":"Wireless sensor networks face a challenge with the limited battery capacity in IoT sensor nodes and low communication quality, hindering network sustainability and increasing maintenance costs. To simultaneously address these issues, a novel octa-port antenna/rectenna with dual-polarization capabilities is proposed for simultaneous wireless information and power transfer (SWIPT) operation. The four ports of the design realize a rectenna for wireless power transfer (WPT), and the other four ports are dedicated to MIMO operation for wireless information transfer (WIT). The rectenna has a gain of 7.2 dBi with a dc beamwidth of 72.2°. The rectenna achieves a good PCE of 50.92% at \u0000<inline-formula> <tex-math>$1700~Omega $ </tex-math></inline-formula>\u0000, translating to a dc power harvesting capacity of \u0000<inline-formula> <tex-math>$72.47~mu $ </tex-math></inline-formula>\u0000 W at −8.46-dBm RF input power. The MIMO antennas maintain a bandwidth of 200 MHz, with \u0000<inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula>\u0000 less than −10 dB centered around 5.8 GHz. The mutual coupling between co-polarized antenna/rectenna ports and among the MIMO antenna ports is less than −12 and −25 dB, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142940824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 4-mW 2.2–6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications 用于低温应用的16nm FinFET技术的4mw 2.2-6.9 GHz LNA
IEEE microwave and wireless technology letters Pub Date : 2024-10-22 DOI: 10.1109/LMWT.2024.3477328
Runzhou Chen;Hamdi Mani;Phil Marsh;Richard Al Hadi;Pragya Shrestha;Jason Campbell;Christopher Chen;Hao-Yu Chien;Kosmas Galatsis;Mau-Chung Frank Chang
{"title":"A 4-mW 2.2–6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications","authors":"Runzhou Chen;Hamdi Mani;Phil Marsh;Richard Al Hadi;Pragya Shrestha;Jason Campbell;Christopher Chen;Hao-Yu Chien;Kosmas Galatsis;Mau-Chung Frank Chang","doi":"10.1109/LMWT.2024.3477328","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3477328","url":null,"abstract":"This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1351-1354"},"PeriodicalIF":0.0,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Demonstration of Op-Amp-Based Negative Inductor in Microwave Regime 基于运算放大器的负电感器在微波环境下的实验演示
IEEE microwave and wireless technology letters Pub Date : 2024-10-21 DOI: 10.1109/LMWT.2024.3472058
Rahul Vishwakarma;Aakash;Jyoti Yadav;Amit Verma;Kumar Vaibhav Srivastava
{"title":"Experimental Demonstration of Op-Amp-Based Negative Inductor in Microwave Regime","authors":"Rahul Vishwakarma;Aakash;Jyoti Yadav;Amit Verma;Kumar Vaibhav Srivastava","doi":"10.1109/LMWT.2024.3472058","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3472058","url":null,"abstract":"This letter presents the methodology behind the design and development of a device that disobeys Foster’s reactance theorem and operates as a negative inductor in the microwave range. An operational amplifier (op-amp)-based negative impedance converter (NIC) is used to design a negative inductor (nonfoster element). The design concept is quantitatively analyzed, simulated, and experimentally verified. A co-simulation technique and some basic principles are presented to make it easier to build and optimize the negative inductor circuit. The simulation results show that the input admittance is negative from 1 to 4 GHz. The method of fabrication used is a hybrid microwave integrated circuit (HMIC). The methodology is verified by the measurement of a prototype whose size is \u0000<inline-formula> <tex-math>$20times 20$ </tex-math></inline-formula>\u0000 mm (\u0000<inline-formula> <tex-math>$0.006lambda _{0} times 0.066lambda _{0}$ </tex-math></inline-formula>\u0000) with a thickness of h = 1.6 mm (\u0000<inline-formula> <tex-math>$0.0053lambda _{0}$ </tex-math></inline-formula>\u0000), where \u0000<inline-formula> <tex-math>$lambda _{0}$ </tex-math></inline-formula>\u0000 is the free-space wavelength at 1 GHz. Good agreement between experimental data and theoretical predictions is observed for 1–4 GHz, proving the validity of the provided method. The proposed prototype can eliminate reactance in impedance matching while designing broadband RF antennas and absorbers. This is the first work which demonstrates the realization of negative inductor in using HMIC technology.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1367-1370"},"PeriodicalIF":0.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF Switch Integrated With CSRR Array for Subsurface Imaging of Composite Structures 射频开关集成CSRR阵列用于复合材料结构的地下成像
IEEE microwave and wireless technology letters Pub Date : 2024-10-18 DOI: 10.1109/LMWT.2024.3469780
Ankita Kumari;Shilpa P. Das;Greeshmaja Govind;M. J. Akhtar
{"title":"RF Switch Integrated With CSRR Array for Subsurface Imaging of Composite Structures","authors":"Ankita Kumari;Shilpa P. Das;Greeshmaja Govind;M. J. Akhtar","doi":"10.1109/LMWT.2024.3469780","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3469780","url":null,"abstract":"In this work, a novel RF switchable sensor array based on complementary split ring resonator (CSRR) elements and PIN diodes is presented for subsurface imaging of composite structures. The proposed scheme utilizes a \u0000<inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula>\u0000 array of CSRR elements, which can be switched using 4 PIN diodes to facilitate a fast scanning of the test structure without any mechanical movement. The individual elements of the \u0000<inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula>\u0000 CSRR array are carefully designed to resonate at four different frequencies to clearly distinguish their response simultaneously. The use of switches along with a 1–4 power divider at the input and a 4–1 power combiner at the output on a single board facilitates a simple two-port setup to conduct the measurement. The applicability of the proposed scheme is demonstrated by retrieving the image and shape of a few composite structures using the designed CSRR array.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1403-1406"},"PeriodicalIF":0.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142789008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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