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A New Filtering Out-of-Phase Power Divider With Unequal Power Distribution Using Modified Branch-Line Structure
IEEE microwave and wireless technology letters Pub Date : 2025-01-24 DOI: 10.1109/LMWT.2025.3529978
Xin Xu;Dongze Zheng;Feng Huang
{"title":"A New Filtering Out-of-Phase Power Divider With Unequal Power Distribution Using Modified Branch-Line Structure","authors":"Xin Xu;Dongze Zheng;Feng Huang","doi":"10.1109/LMWT.2025.3529978","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3529978","url":null,"abstract":"This letter proposes a new filtering power divider with out-of-phase characteristic and unequal power division ratio. Stemming from the traditional branch-line prototype, a modified structure is proposed to realize bandpass response with unequal power division and out-of-phase behavior. It is constructed in a three-stage branch-line structure, loaded with short-ended stubs, responsible for out-of-band suppressions. In addition, two anti-phase signals at output ports could be well isolated by a grounded chip resistor. For validation, a practical power divider circuit operating at 2.0 GHz with a 3-dB fractional bandwidth of 27% and a power division ratio of 4:1 are designed, fabricated, and measured. Results show that the presented power divider exhibits good filtering response, satisfactory out-of-band rejection, anti-phase difference, and desired unequal power distribution.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"537-540"},"PeriodicalIF":0.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Second Harmonic Source Impedance on the Linearity Performance of Hybrid Inverse Continuous Modes
IEEE microwave and wireless technology letters Pub Date : 2025-01-22 DOI: 10.1109/LMWT.2025.3525727
Feifei Li;Cuiping Yu;Yuanan Liu
{"title":"Impact of Second Harmonic Source Impedance on the Linearity Performance of Hybrid Inverse Continuous Modes","authors":"Feifei Li;Cuiping Yu;Yuanan Liu","doi":"10.1109/LMWT.2025.3525727","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3525727","url":null,"abstract":"This letter analyzes the impact of second harmonic source impedance on the linearity performance of Hybrid Inverse Continuous Modes (HICMs). The study reveals that the linearity of the HICM mode deteriorates significantly when the second harmonic source impedance falls within a small region where the input nonlinearity parameter <inline-formula> <tex-math>$gamma ~lt 0$ </tex-math></inline-formula>. Outside of this specific area, HICM linearity remains nearly constant across the rest of the Smith chart. This finding is crucial for designers to prevent unexpected linearity degradation when expanding the second harmonic source impedance space in HICM. Experimental verification involves implementing input harmonic control to prevent the second harmonic source impedance from operating in regions with degraded performance, thereby achieving both good efficiency and linearity. A power amplifier (PA) with a frequency range of 1.7–2.8 GHz is designed based on the CGH40010F. The test results show that the drain efficiency is 62.0%–71.9%, and the output power is 40.6–42.8 dBm. The linearity is tested with a 100 MHz 5G NR signal (with a peak-to-average power ratio of 8 dB) at 2.35 GHz. The worst adjacent channel power ratio (ACPR) is −33.6 dBc without digital predistortion (DPD), and −49.2 dBc with DPD. Around 34.35 dBm average output power (<inline-formula> <tex-math>$P_{mathrm {ave}}$ </tex-math></inline-formula>) and 34.6% average DE (DE<inline-formula> <tex-math>$_{mathrm {ave}}$ </tex-math></inline-formula>) were obtained. When the output power is at the backed off by 3 dB, the measured IMD3 is less than −30 dBc.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"569-572"},"PeriodicalIF":0.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 220–330-GHz Broadband Subharmonic Mixer With Linear Gradient Probes 带线性梯度探头的220 - 330 ghz宽带次谐波混频器
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3528007
Xiuxiu Yang;Jun Zhou;Tianchi Zhou;Jiahao Yang;Shixiong Liang;Jingrui Liang;Hongji Zhou;Yaxin Zhang;Ziqiang Yang
{"title":"A 220–330-GHz Broadband Subharmonic Mixer With Linear Gradient Probes","authors":"Xiuxiu Yang;Jun Zhou;Tianchi Zhou;Jiahao Yang;Shixiong Liang;Jingrui Liang;Hongji Zhou;Yaxin Zhang;Ziqiang Yang","doi":"10.1109/LMWT.2025.3528007","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3528007","url":null,"abstract":"This letter introduces the design of a novel broadband subharmonic mixer operating at 220–330 GHz, which can be applied in the fields of spectrum analysis and wireless communication systems. The device achieves frequency mixing through a pair of Schottky diodes and adopts a linear gradient probe structure, which has the remarkable feature of a wide operating band in the terahertz band, providing a new way of thinking for the design of ultrawideband terahertz mixers. The measured results show that the typical single sideband (SSB) conversion loss of the broadband subharmonic mixer is 11 dB in the RF frequency range of 220–330 GHz and the minimum conversion loss is 8.7 dB at 300 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"318-321"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications 用于宽带无线应用的37.1 dbm w波段功率放大器模块，采用基于氮化镓的hemt和电阻背金属稳定
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3527934
Yasuhiro Nakasha;Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Atsushi Yamada;Toshihiro Ohki
{"title":"37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications","authors":"Yasuhiro Nakasha;Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Atsushi Yamada;Toshihiro Ohki","doi":"10.1109/LMWT.2025.3527934","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527934","url":null,"abstract":"This letter presents a four-way W-band power amplifier (PA) module that packages GaN-based high electron mobility transistor (HEMT) millimeter-wave monolithic integrated circuits (MMICs) designed with coplanar waveguides (CPWs). A resistive-back-metal (RBM) layer was formed on the back side of the MMICs to keep stable in the module even without using substrate vias. The verification of the effect of the RBM layer was performed using CPW-based MMIC test chips. The assembled PA module, where millimeter-wave components, such as a waveguide (WG) combiner/divider and a WG-to-microstrip line transition, were optimized to reduce losses and flatten frequency responses, demonstrated stable and broadband characteristics in a frequency range of 88–100 GHz. A peak output power (<inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula>) of 37.1 dBm with a power-added efficiency (PAE) of 9.9% was achieved at a frequency of 92 GHz and a bias voltage (<inline-formula> <tex-math>$V_{text {DS}}$ </tex-math></inline-formula>) of 15 V. <inline-formula> <tex-math>$V_{text {DS}}$ </tex-math></inline-formula> was set to 20 V to enhance the power performance of the PA module, achieving a peak <inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula> of 38.8 dBm with a PAE of 8.1%. To the best of our knowledge, the PA module exhibited the highest peak <inline-formula> <tex-math>$P_{text {OUT}}$ </tex-math></inline-formula> value among W-band single PA modules with a bandwidth (BW) of more than 10 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"358-361"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 24-to-30-GHz GaN MMIC Doherty Power Amplifier Using Reduced Peaking Intrinsic Output Impedance for Bandwidth Extension 一种24- 30ghz GaN MMIC Doherty功率放大器，采用降低峰值固有输出阻抗进行带宽扩展
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3528628
Ruijia Liu;Haoyang Jia;Lin Qi;Anding Zhu
{"title":"A 24-to-30-GHz GaN MMIC Doherty Power Amplifier Using Reduced Peaking Intrinsic Output Impedance for Bandwidth Extension","authors":"Ruijia Liu;Haoyang Jia;Lin Qi;Anding Zhu","doi":"10.1109/LMWT.2025.3528628","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3528628","url":null,"abstract":"This letter presents a millimeter-wave gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) for 5G-NR applications. The bandwidth of the DPA is extended by reducing the intrinsic output impedance of the power-stage peaking transistor at the back-off by selecting a proper gate bias voltage. To verify the concept, a 24–30-GHz GaN MMIC DPA was designed using a 120-nm GaN-on-SiC HEMT process. The fabricated DPA can achieve a saturated power range of 31.6–32.7 dBm, with a corresponding power-added efficiency (PAE) of 20%–27.6%. The PAE at 6-dB PBO ranges from 18.2% to 22.4% in the 24–30-GHz frequency band. When excited by a 100-MHz 5G-NR signal, the DPA can achieve 1.1% EVM and -45.8 dBc ACLR after using digital predistortion.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"362-365"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10848253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harmonic-Recycling Rectification Based on Novel Compact Dual-Band Resonator
IEEE microwave and wireless technology letters Pub Date : 2025-01-21 DOI: 10.1109/LMWT.2025.3528521
Pengde Wu;Hao Wu;Yi-Dan Chen;Zhi Hua Ren;Yuhua Cheng;Changjun Liu
{"title":"Harmonic-Recycling Rectification Based on Novel Compact Dual-Band Resonator","authors":"Pengde Wu;Hao Wu;Yi-Dan Chen;Zhi Hua Ren;Yuhua Cheng;Changjun Liu","doi":"10.1109/LMWT.2025.3528521","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3528521","url":null,"abstract":"Harmonic generation during radio frequency (RF)-dc conversion causes performance degradation of a microwave rectifying circuit. To suppress and recycle the harmonic power, this letter proposes a novel compact dual-band resonator (DBR) based on a microstrip coupled transmission line. It presents open-circuits at the second and third harmonic frequencies, which effectively block the higher order harmonic for power recycling. The conventional input cascading filters for harmonic rejection can be eliminated, simplifying the circuit topology and reducing loss. Theoretical analyses were carried out and corresponding equations were formulated for the proposed DBR. For validation, two rectifying circuits with/without the DBR operating at 2.2 GHz were fabricated and tested. Using the proposed DBR at 10 dBm RF power, the suppression of the second and third harmonic powers is enhanced by 18.4 and 7.6 dB, respectively. Besides, an improvement of RF-dc power conversion efficiency (PCE) was observed; specifically, PCE reached 73.2% at 10 dBm compared to 71.6% obtained from an equivalent rectifier.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"553-556"},"PeriodicalIF":0.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rectangular-Cavity Bandpass Filters With Large Metal Cylinders and Different Fillets 大金属圆柱体和不同圆角的矩形腔带通滤波器
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3527044
Dong-Sheng La;Yu-Jiao Zhang;Dong-Qun Wang;Wen-Zheng Sun;Kai-Da Xu
{"title":"Rectangular-Cavity Bandpass Filters With Large Metal Cylinders and Different Fillets","authors":"Dong-Sheng La;Yu-Jiao Zhang;Dong-Qun Wang;Wen-Zheng Sun;Kai-Da Xu","doi":"10.1109/LMWT.2025.3527044","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527044","url":null,"abstract":"This letter proposes a class of rectangular-cavity bandpass filters (RCBPFs). First, an initial tri-band RCBPF is designed by feeding an empty rectangular cavity (RC) with two orthogonal probes. Second, a dual-band RCBPF is designed by loading two large metal cylinders (LMCs) into the RC. The LMCs change the electric field distributions and resonant frequencies of six resonant modes. Moreover, by increasing the radii of two fillets on the RC, the two transmission zeros (TZs) between two passbands are eliminated. Therefore, a wideband RCBPF is realized. Both proposed RCBPFs exhibit wide stopband due to the effective suppression of out-of-band spurious modes. The performance of these RCBPFs is validated through fabrication and measurement.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"282-285"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems 基于神经网络辅助虚拟波束形成的两级数字预失真在MIMO系统中的信道间效应
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3526625
Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi
{"title":"Two-Stage Digital Predistortion With Neural-Network-Assisted Virtual Beamforming for Interchannel Effects in MIMO Systems","authors":"Xin Hu;Yurong Yao;Boyan Li;Quanhao Yao;Zongyu Chang;Weidong Wang;Fadhel M. Ghannouchi","doi":"10.1109/LMWT.2025.3526625","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3526625","url":null,"abstract":"Existing method to linearize PAs in multiple-input multiple-output (MIMO) systems either rely on deploying over-the-air (OTA) antenna arrays in the far-field or neglect the effects of interchannel. To address these issues, this letter proposes a two-stage digital predistortion (DPD) approach with neural-network (NN)-assisted virtual beamforming (VB) for interchannel effects in MIMO systems. The main DPD compensates for distortion of PAs, while the sub-DPD compensates for distortion of the interchannel effects. An experimental test was performed using a uniform linear array (ULA) at 3.5 GHz. Based on experimental results, the proposed method achieves up to 5.37-dBc improvement in adjacent channel power ratio (ACPR), closely replicates the linearization performance of OTA, and eliminates the need for remote OTA deployment.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"346-349"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology 基于130纳米SiGe技术的78 - 106 ghz电流复用LNA，最小NF为4db，功耗为12.5 mw
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2025.3527522
Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su
{"title":"A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology","authors":"Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su","doi":"10.1109/LMWT.2025.3527522","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3527522","url":null,"abstract":"In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"330-333"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology 基于三端口匹配技术的高效率485 - 525ghz片上功率组合三倍器
IEEE microwave and wireless technology letters Pub Date : 2025-01-16 DOI: 10.1109/LMWT.2024.3525340
Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei
{"title":"A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology","authors":"Li Wang;Dehai Zhang;Jin Meng;Haomiao Wei","doi":"10.1109/LMWT.2024.3525340","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3525340","url":null,"abstract":"In this letter, a high-efficiency 485–525 GHz frequency balanced tripler using three-port matching technology (TPMT) is reported. In comparison to traditional balanced tripler, the TPMT uses an on-chip capacitor connected to a biased microstrip line (Ms) at the bias port, which not only provides dc and RF isolation but also functions as part of the diode matching. The impedance of bias port participates in the matching process of the diode, effectively reducing the parasitic effect associated with the on-chip capacitance and thereby enhancing the efficiency of the tripler. In addition, this study adopts the on-chip power combining technology to improve the power handling capability of the frequency tripler and minimize the effects of assembly errors. At room temperature, the measured results show that the tripler has an efficiency of 4.2%–13.42% over the 485–525 GHz band at 70–172-mW input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"302-305"},"PeriodicalIF":0.0,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143602007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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